arXiv subjects

Jean-Christophe Charlier

Publications and source records attributed to Jean-Christophe Charlier.

At least 19 recordsLinked to original sources

arXiv2026

Fine-Tuned Machine-Learned Interatomic Potentials for Structural and Vibrational Properties of Twisted 2D Materials

Twisted van der Waals bilayers form moiré superlattices whose structural and vibrational properties are highly sensitive to variations in local stacking registry and the degree of atomic reconstruction, yet accurate atomistic modeling of these systems at the DFT level remains computationally prohibitive at small twist angles. We investigate machine-learned interatomic potentials for moiré systems, using twisted bilayer graphene, \textit{h}-BN, and MoS$_2$ as representative materials spanning a broad spectrum of mechanical compliance and atomic reconstruction behavior. We show that fine-tuning universal atomistic foundation models is essential to achieve DFT accuracy for layered materials, as broadly trained foundation models prove insufficient for resolving the subtle interlayer energetics that govern atomic reconstruction. Through local strain tensor analysis and the phonon band unfolding technique, our fine-tuned MACE model reveals a consistent reconstruction-induced strain landscape in all three materials, with extended low-energy stacking domains separated by narrow soliton lines where deformation concentrates. The system progressively optimizes the local stacking registry within each domain, giving rise to a spatially structured deformation field whose amplitude scales with the mechanical compliance of the material and can be further tuned by external perturbation. The obtained results of both atomic reconstructed structures and moiré phonon spectra present a good agreement with the reported experiments, thereby demonstrating the accuracy and efficiency of our methodology in modeling of these large scale nanomaterials.

cond-mat.mtrl-sci↗

arXiv2026

Ab initio study of magnetism in pristine and defective MnBi2Te4

The magnetic material MnBi2Te4 (MBT) has garnered significant attention due to its unique combination of long-range antiferromagnetism and nontrivial topological electronic properties. However, experimental measurements report inconsistent magnetizations, which could be attributed to a variety of intrinsic defects. To date, a comprehensive investigation of defect-engineered MBT systems has not yet been established. Employing state-of-the-art $ab~initio$ techniques, this work systematically investigates the influence of various experimentally reported defects on the magnetic properties of bulk and monolayer MBT at different concentrations. Mn-vacancy and Mn-rich defects are found to enhance the ferromagnetism of bulk MBT. The investigation of Mn-rich and intermixing defects in the monolayer reveals that subtle structural and electronic modifications can alter the magnetic coupling. Projection onto a Heisenberg Hamiltonian demonstrates that defects modify exchange interactions, thereby giving rise to distinct magnetic ground states. This work sheds light on magnetic coupling mechanisms and provides guidelines for the experimental control of magnetism in MnBi2Te4.

cond-mat.mtrl-sci↗

arXiv2026

Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator

Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show that ion irradiation allows to modify the magnetic and the topological properties of the van der Waals magnetic topological insulator MnBi$_2$Te$_4$. Using inert ion beams, intrinsic defects are introduced via collision cascades without chemical doping. We identify two distinct regimes. At low fluence, cation antisite disorder leads to a near-complete redistribution of Bi over cation sites while preserving long-range crystallographic order, accompanied by a transition from $p$-type to $n$-type transport. At high fluence, cation-anion intermixing drives the formation of a previously unreported layer-disordered phase characterized by a high density of van der Waals-specific planar defects, including swapped bilayers. Despite significant structural disorder, the system retains partial periodic order up to high displacement levels. Magnetometry and X-ray spectroscopy show that the Mn high-spin state and antiferromagnetic interactions persist, while magnetic anisotropy is strongly reduced. At the same time, the anomalous Hall conductivity is suppressed fivefold, far exceeding the change in magnetization, indicating a direct modification of Berry curvature. These results establish ion irradiation as a means to tune topology through defect engineering and reveal a disorder-driven approach to control symmetry and electronic structure in van der Waals magnetic materials.

cond-mat.mtrl-sci↗

arXiv2025

Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures

When monolayer graphene is crystallographically aligned to hexagonal boron nitride (BN), a moiré superlattice is formed, producing characteristic satellite Dirac peaks in the electronic band structure. Aligning a second BN layer to graphene creates two coexisting moiré patterns, which can interfere to produce periodic, quasi-periodic or non-periodic superlattices, depending on their relative alignment. Here, we investigate one of the simplest realizations of such a double-moiré structure, graphene encapsulated between two BN layers, using dynamically rotatable van der Waals heterostructures. Our setup allows \textit{in situ} control of the top BN alignment while keeping the bottom BN fixed. By systematically mapping the charge transport as a function of BN angular alignment, we identify the simultaneous signatures of the original moirés, super-moirés, and a third set of features corresponding to quasi-Brillouin zones (qBZ) formed when the system's periodicity becomes ill-defined. Comparing our measurements with theoretical models, we provide the first experimental mapping of the qBZs as a function of angular alignment. Our results establish a direct experimental link between moiré interference and qBZ formation, opening new avenues for engineering electronic structures in multi-aligned 2D heterostructures.

cond-mat.mes-hall↗

arXiv2025

Proximity Effects Between the Graphene Quasicrystal and Magic-Angle Twisted Bilayer Graphene

We present a numerical study of three-layer graphene heterostructures in which the layers are twisted by the magic angle ($\sim$1.1$^\circ$) or by $\sim$$30^\circ$ to form a graphene quasicrystal. The heterostacks are described using realistic structural relaxations and tight-binding Hamiltonians, and their transport properties are computed for both pristine and disordered systems containing up to $\sim$8 million atoms. Owing to the weak interlayer coupling, we resolve the hybridization between magic-angle flat bands and quasicrystalline states, which are modified in distinct ways across low- and high-energy windows, revealing a new hybrid electronic regime to explore.

cond-mat.mes-hall↗

arXiv2025

Importance of Non-Adiabatic Effects on Kohn Anomalies in 1D metals

Kohn anomalies are kinks or dips in phonon dispersions which are pronounced in low-dimensional materials. We investigate the effects of non-adiabatic phonon self-energy on Kohn anomalies in one-dimensional metals by developing a model that analyzes how the adiabatic phonon frequency, electron effective mass, and electron-phonon coupling strength influence phonon mode renormalization. We introduce an electron-phonon coupling strength threshold for low-temperature system instability, providing experimentalists with a tool to predict them. Finally, we validate the predictions of our model against first-principles calculations on a 4 Å-diameter carbon nanotube.

cond-mat.mtrl-sci↗

arXiv2025

Disorder-Induced Delocalization in Magic-Angle Twisted Bilayer Graphene

Flat bands in moiré systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of the flat-band states. Here we use numerical simulations to examine the electronic transport properties of such flat bands in magic-angle twisted bilayer graphene in the presence of disorder. We find that while a conventional downscaling of the mean free path with increasing disorder strength occurs at higher energies, in the flat bands the mean free path can actually increase with increasing disorder strength.This phenomenon is also captured by the disorder-dependent quantum metric, which is directly linked to the ground state localization.This disorder-induced delocalization suggests that weak disorder may have a strong impact on the exotic physics of magic-angle bilayer graphene and other related moiré systems.

cond-mat.mes-hall↗

arXiv2025

High-throughput calculations of spin Hall conductivity in non-magnetic 2D materials

Spin Hall effect (SHE) in two-dimensional (2D) materials is promising to effectively manipulate spin angular momentum and identify topological properties. In this work, we implemented an automated Wannierization with spin-orbit coupling on 426 non-magnetic monolayers including 210 metal and 216 insulators. Intrinsic spin Hall conductivity (SHC) has been calculated to find candidates exhibiting novel properties. We discover that Y$_2$C$_2$I$_2$ has an unconventional SHE with canted spin due to low crystal symmetry, Ta$_4$Se$_2$ is a metallic monolayer with exceptionally high SHC, and the semi-metal Y$_2$Br$_2$ possesses efficient charge-to-spin conversion induced by anti-crossing in bands. Moreover, quantum spin Hall insulators are investigated for quantized SHC. The present work provides a high-quality Wannier Hamiltonian database of 2D materials, and paves the way for the integration of 2D materials into high-performance and low-power-consumption spintronic devices.

physics.comp-ph↗

arXiv2024

Upper limit of spin relaxation in suspended graphene

We use a combination of molecular dynamics and quantum transport simulations to investigate the upper limit of spin transport in suspended graphene. We find that thermally-induced atomic-scale corrugations are the dominant factor, limiting spin lifetimes to ~10 ns by inducing a strongly-varying local spin-orbit coupling. These extremely short-range corrugations appear even when the height profile appears to be smooth, suggesting they may be present in any graphene device. We discuss our results in the context of experiments, and briefly consider approaches to suppress these short-range corrugations and further enhance spin lifetimes in graphene-based spin devices.

cond-mat.mes-hall↗

arXiv2024

Recursive Green's functions optimized for atomistic modelling of large superlattice-based devices

The Green's function method is recognized to be a very powerful tool for modelling quantum transport in nanoscale electronic devices. As atomistic calculations are generally expensive, numerical methods and related algorithms have been developed accordingly to optimize their computation cost. In particular, recursive techniques have been efficiently applied within the Green's function calculation approach. Recently, with the discovery of Moiré materials, several attractive superlattices have been explored using these recursive Green's function techniques. However, numerical difficulty issues were reported as most of these superlattices have relatively large supercells, and consequently a huge number of atoms to be considered. In this article, improvements to solve these issues are proposed in order to keep optimizing the recursive Green's function calculations. These improvements make the electronic structure calculations feasible and efficient in modelling large superlattice-based devices. As an illustrative example, twisted bilayer graphene superlattices are computed and presented to demonstrate the efficiency of the method.

cond-mat.mes-hall↗

arXiv2024

Quantifying the local mechanical properties of twisted double bilayer graphene

Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7\% and 17\% along single and double domain walls, respectively. Our experimental results are confirmed by force-field relaxation models. This study highlights the strong tunability of nanomechanical properties in engineered twisted materials, and paves the way for future applications of designer 2D nanomechanical systems.

cond-mat.mes-hall↗

arXiv2024

Guidelines for accurate and efficient calculations of mobilities in two-dimensional materials

Emerging two-dimensional (2D) materials bring unprecedented opportunities for electronic applications. The design of high-performance devices requires an accurate prediction of carrier mobility in 2D materials, which can be obtained using state-of-the-art $ab~initio$ calculations. However, various factors impact the computational accuracy, leading to contradictory estimations for the mobility. In this work, targeting accurate and efficient $ab~initio$ calculations, transport properties in III-V monolayers are reported using the Boltzmann transport equation, and the influences of pseudopotential, quadrupole correction, Berry connection, and spin-orbit coupling (SOC) on mobilities are systematically investigated. Our findings are as follows: (1) The inclusion of semi-core states in pseudopotentials is important to obtain accurate calculations. (2) The variations induced by dynamical quadrupole and Berry connection when treating long range fields can be respectively 40% and 10%. (3) The impact of SOC can reach up to 100% for materials with multi-peak bands. Importantly, although SOC notably modifies the electronic wavefunctions, it negligibly impacts the dynamical matrices and scattering potential variations. As a result, the combination of fully-relativistic electron calculation and scalar-relativistic phonon calculation can strike a good balance between accuracy and cost. This work compares computational methodologies, providing guidelines for accurate and efficient calculations of mobilities in 2D semiconductors.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Spin Hall Ratio in Two-Dimensional Semiconductors

The conversion efficiency from charge current to spin current via spin Hall effect is evaluated by the spin Hall ratio (SHR). Through state-of-the-art $ab~initio$ calculations involving both charge conductivity and spin Hall conductivity, we report the SHRs of the III-V monolayer family, revealing an ultrahigh ratio of 0.58 in the hole-doped GaAs monolayer. In order to find more promising 2D materials, a descriptor for high SHR is proposed and applied to a high-throughput database, which provides the fully-relativistic band structures and Wannier Hamiltonians of 216 exfoliable monolayer semiconductors and has been released to the community. Among potential candidates for high SHR, the MXene monolayer Sc$_2$CCl$_2$ is identified with the proposed descriptor and confirmed by computation, demonstrating the descriptor validity for high SHR materials discovery.

cond-mat.mtrl-sci↗

arXiv2024

Thermoelectric Properties of Graphene through BN-ring Doping: A Theoretical Investigation

Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal conductivity. Efforts to enhance its thermoelectric properties have involved the usage of carbon-based nanoribbons, strain engineering, and heteroatom co-doping, particularly with Nitrogen and/or Boron atoms. In this work, multiscale simulation approaches combining DFT calculations and semi-empirical models are used to explore the potential improvement of the thermoelectric properties via borazine (B$_3$N$_3$)-ring doping. As bandgap engineering can be obtained with this doping, the thermoelectric properties of graphene are significantly enlarged, albeit at the cost of reduced conductance. The effects observed are not only dependent on the concentration of BN within the graphene lattice but are also notably influenced by the relative rotational alignment of the BN rings. Furthermore, the effect of the distribution and rotational disorder are considered, showing reduced electronic conductance compared to the periodic case highlighting the importance of precise control over the doping parameters of BN-ring. Lastly, the thermal lattice conductance is estimated revealing a substantial reduction of up to 40$\%$ compared to pristine graphene opening up the possibility of enhancing the thermoelectric efficiency of BNC materials. The present theoretical approach highlights how BN-ring doping can refine the thermoelectric properties of 2D graphene, offering a pathway for enhancing its suitability in practical thermoelectric applications.

cond-mat.mtrl-sci↗

arXiv2024

Exploring Dielectric Properties in Models of Amorphous Boron Nitride

We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about $10.000$ atoms) embedding varying concentrations of ${\rm sp^{1}, sp^{2}}$ and ${\rm sp^3}$ bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.

cond-mat.mtrl-sci↗

arXiv2023

Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices

Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on h-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers. In this work, the effects of these moiré structures on the transport properties of graphene are investigated using atomistic simulations. At large misalignment angles (leading to small moiré cells), the transport properties (most remarkably, Klein tunneling) of pristine graphene devices are conserved. On the other hand, in the nearly aligned cases, the moiré interaction induces stronger effects, significantly affecting electron transport in graphene. In particular, Klein tunneling is significantly degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong quantum confinement) effects and non-linear I-V characteristics are observed. P-N interface smoothness engineering is also considered, suggesting as a potential way to improve these transport features in graphene/h-BN devices.

cond-mat.mes-hall↗

arXiv2022

First-principles study of the structural and electronic properties of BN-ring doped graphene

Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom co-doping (i.e. with boron and/or nitrogen) is an appealing strategy to tune both its structural and electronic properties, possibly inducing a band gap in graphene. However, presently synthesized BN-doped carbon-based materials are randomly doped, leading to their electronic properties not being reproducible. Using first-principles techniques, the present study investigates the periodic doping of graphene with borazine-like rings in order to search for an entirely new class of BCN hybrid 2D materials exhibiting high stabilities and optimized band gaps for opto-electronic applications. Ab initio calculations show that BN-ring doped graphene displays cohesive energies comparable with benchmark ideal periodic BCN systems (such as BC$_3$, C$_3$N$_4$, BC$_2$N) with a decreasing linear trend toward high concentrations of BN-rings. Band gaps of BN-ring doped graphene systems are calculated using many-body perturbation techniques and are found to be sensitive to the doping pattern and to be considerably larger for high concentrations of BN rings exhibiting the same orientation. These predictions suggest that BN-ring doped graphene materials could be interesting candidates for the next generation of optoelectronic devices and open new opportunities for their synthesis using chemical bottom-up approaches.

cond-mat.mtrl-sci↗

arXiv2022

Towards Optimized Charge Transport in Multilayer Reduced Graphene Oxides

In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeopardizing electronic flow remains unclear. Here, thanks to the development of a multiscale computational approach combining first-principles calculations with large scale transport simulations, the transport scaling laws in multilayer rGO are unraveled, explaining why diffusion worsens with increasing film thickness. In contrast, contacted films are found to exhibit an opposite trend when the mean free path becomes shorter than the channel length, since conduction becomes predominantly driven by interlayer hopping. These predictions are favourably compared with experimental data and open a road towards the optimization of graphene-based composites with improved electrical conduction.

cond-mat.mes-hall↗