arXiv subjects

Jean-Michel Gérard

Publications and source records attributed to Jean-Michel Gérard.

At least 19 recordsLinked to original sources

arXiv2026

Coherent dynamics of individual excitons in a quantum dot embedded in a nanopost

We measured coherent ultrafast dynamics of exciton complexes in a single strongly-confined InAs quantum dot embedded in a GaAs nanopost. Such a photonic structure combines a wave guiding with a cavity effect and assures an enhanced light-matter coupling over a broad spectral range of 30 nm. Coherence properties of an exciton-biexciton system hosted by a quantum dot are assessed with four-wave mixing microscopy. Our results show that this broad-band photonic structure is an excellent asset to probe coherent couplings in a small set of solid state quantum systems and to investigate the coherence dynamics within the level structure of their excited states.

cond-mat.mes-hall↗

arXiv2026

Enhancing the efficiency of quantum-dot-based single-photon source designs by suppressing background emission using concentric rings

In this paper, we theoretically demonstrate that a few-period circular Bragg reflector consisting of concentric rings placed around an infinite nanowire with an embedded quantum dot can increase the fraction of radiative emission into the fundamental $\mathrm{HE}_{11}$ mode ($β=Γ_{\rm HE_{11}}/Γ_{\rm Total}$) up to 0.999 due to enhanced suppression of the emission into radiation modes caused by a photonic bandgap effect. We then apply this strategy in the practically relevant case of the finite-sized single-photon source based on tapered nanowires and demonstrate that the collection efficiency can be improved. Additionally, we also show the beneficial effects of placing optimized rings around the micropillar single-photon source.

physics.optics↗

arXiv2026

Optical detection of the electron spin resonances of G centers in silicon

Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable metastable electron-spin triplet state. Here we investigate the spin properties of ensembles of G centers under above-band-gap excitation. We elucidate the spin photo-dynamics giving rise to the optical detected magnetic resonance (ODMR) response of G centers. The optimal pulsed sequence for measuring the ODMR spectrum of the G defects is identified, along with the temperature and optical-power regimes maximizing the spin readout contrast. Through magneto-optical measurements, we detect a level-anticrossing of the G center electron spin states. At last, we demonstrate coherent spin control of the defects, and characterize their spin-coherence properties. Unveiling the spin degree of freedom of the G center opens new avenues for the realization of quantum memories and quantum registers based on silicon color centers.

quant-ph↗

arXiv2026

A single optically detectable tumbling spin in silicon

We demonstrate single spin spectroscopy of a fluorescent tumbling defect in silicon called the G center, behaving as a pseudo-molecule randomly reorienting itself in the crystalline matrix. Using high-resolution spin spectroscopy, we reveal a fine magnetic structure resulting from the spin principal axes jumping between discrete orientations in the crystal. Modeling the atomic reorientation of the defect shows that spin tumbling induces variations in the coupling to the microwave magnetic field, enabling position-dependent Rabi frequencies to be detected in coherent spin control experiments. By virtue of its pseudo-molecule configuration, the G center in silicon is a unique quantum system to investigate the mutual interaction between optical, spin and rotation properties in a highly versatile material.

quant-ph↗

arXiv2026

Bright and pure single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity

We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. The color center consists of a single W center, created at a well-defined position by Si$^{+}$ ion implantation through a 150 nm-diameter nanohole in a mask. A circular Bragg grating cavity resonant with the W's zero-phonon line at 1217 nm is fabricated at the same location as the nanohole. By Purcell enhancement of zero-phonon emission, we obtain a photon count rate of $1.29 \pm 0.01$ Mcounts/s at saturation under above-gap continuous-wave excitation with a Debye-Waller factor of $98.6\pm1.4 \%$. A clean photon antibunching behavior is observed up to pump powers ensuring saturation of the W's emission ($g^{(2)}(0)=0.06\pm0.02$ at $P=9.2P_{sat}$), evidencing that the density of additional parasitic fluorescent defects is very low. We also demonstrate the triggered emission of single photons with $93\pm2 \%$ purity under weak pulsed laser excitation. At high pulsed laser power, we reveal a detrimental effect of repumping processes, that could be mitigated using selective pumping schemes in the future. These results represent a major step towards on-demand sources of indistinguishable near-infrared single photons within silicon photonics chips.

physics.optics↗

arXiv2024

Hopping of the center-of-mass of single G centers in silicon-on-insulator

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.

quant-ph↗

arXiv2024

Genuine and faux single G centers in carbon-implanted silicon

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 μ$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.

quant-ph↗

arXiv2023

Purcell enhancement of silicon W centers in circular Bragg grating cavities

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($η_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.

physics.optics↗

arXiv2023

Performance of the nanopost single-photon source: beyond the single-mode model

We present a detailed analysis of the physics governing the collection efficiency and the Purcell enhancement of the nanopost single-photon source. We show that a standard single-mode Fabry-Pérot model is insufficient to describe the device performance, which benefits significantly from scattering from the fundamental mode to radiation modes. We show how the scattering mechanism decouples the collection efficiency from the Purcell enhancement, such that maximum collection efficiency is obtained off-resonance. Finally, we discuss how this scattering mechanism can be beneficial for future single-photon source designs.

quant-ph↗

arXiv2022

Near-unity efficiency and photon indistinguishability for the "hourglass" single-photon source using suppression of background emission

An on-going challenge within scalable optical quantum information processing is to increase the collection efficiency $\varepsilon$ and the photon indistinguishability $η$ of the single-photon source towards unity. Within quantum dot-based sources, the prospect of increasing the product $\varepsilon η$ arbitrarily close to unity was recently questioned. In this work, we discuss the influence of the trade-off between efficiency and indistinguishability in the presence of phonon-induced decoherence, and we show that the photonic "hourglass" design allows for improving $\varepsilon η$ beyond the predicted maximum for the standard micropillar design subject to this trade-off. This circumvention of the trade-off is possible thanks to control of the spontaneous emission into background radiation modes, and our work highlights the importance of engineering of the background emission in future pursuits of near-unity performance of quantum dot single-photon sources.

quant-ph↗

arXiv2022

Detection of single W-centers in silicon

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$μ$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

quant-ph↗

arXiv2022

Single G centers in silicon fabricated by co-implantation with carbon and proton

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $μ$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.

physics.app-ph↗

arXiv2021

Inducing micromechanical motion by optical excitation of a single quantum dot

Hybrid quantum optomechanical systems offer an interface between a single two-level system and a macroscopical mechanical degree of freedom. In this work, we build a hybrid system made of a vibrating microwire coupled to a single semiconductor quantum dot (QD) via material strain. It was shown a few years ago, that the QD excitonic transition energy can thus be modulated by the microwire motion. We demonstrate here the reverse effect, whereby the wire is set in motion by the resonant drive of a single QD exciton with a laser modulated at the mechanical frequency. The resulting driving force is found to be almost 3 orders of magnitude larger than radiation pressure. From a fundamental aspect, this state dependent force offers a convenient strategy to map the QD quantum state onto a mechanical degree of freedom.

cond-mat.mes-hall↗

arXiv2019

Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity

We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode during its relaxation, using the emission of the QD ensemble as a broadband internal light source. Sub-ensembles of QDs emitting at a given frequency, interact transiently with the mode and emit an ultrashort spontaneous emission pulse into it. By playing with switching parameters and with the emission frequency of the QDs, selected by spectral filtering, pulse durations ranging from 300 ps down to 6 ps have been obtained. These pulses display a very small coherence length, which opens potential applications in the field of ultrafast imaging. The control of QD-mode coupling on ps-time scales establishes also cavity switching as a key resource for quantum photonics.

cond-mat.mes-hall↗

arXiv2019

Nonlinear frequency conversion is controlled by vacuum fluctuations

Ever since the advent of nonlinear optics, the generation of light by frequency-conversion is drawing continued attention, and leading to emerging applications such as supercontinuum sources for ultra stable clocks and advanced microscopy. A modern approach to frequency-conversion is to switch light confined in micro- and nanocavity resonances to enable on-chip operation. Supposedly, nonlinear frequency conversion in such confined media differs from traditional non-linear optics in three key features regarding output spectrum, frequency shift, and critical time scale. Therefore, we switch GaAs-AlAs microcavities by the electronic Kerr effect, and study a range of quality factors to bridge the confined and the traditional non-linear regimes. We uncover the key role of the density of vacuum fluctuations, i.e., the local density of optical states (LDOS) for newly generated frequencies, a concept inspired by cavity quantum electrodynamics (cQED). As a result, we succeed to establish a framework, which not only describes nonlinear optics both in traditional bulk and in confined media but also opens a new control dimension in changing the color of light.

physics.optics↗

arXiv2018

Improvement of the critical temperature of NbTiN films on III-nitride substrates

In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations.

physics.app-ph↗

arXiv2016

Resonant driving of a single photon emitter embedded in a mechanical oscillator

Coupling a microscopic mechanical resonator to a nano-scale quantum system enables control of the mechanical resonator via the quantum system, and vice versa. The coupling is usually achieved through functionalization of the mechanical resonator but this results in additional mass and dissipation channels. An alternative is an intrinsic coupling based on strain. We employ here a monolithic semiconductor system. The nano-scale quantum system is a quantum dot; the mechanical resonator a microscopic trumpet which simultaneously optimizes the mechanical and photonic properties. The quantum dot transition is driven resonantly. Via the resonance fluorescence, we observe mechanical Brownian motion even at 4K, and demonstrate a coupling to mechanical modes of different types. We identify a mechanical mode with a cooperativity larger than one. We show analytically that the Heisenberg limit on displacement measurement can be reached with an embedded two-level system in the case of a transform-limited optical emitter with perfect photon detection. We argue that operation close to the Heisenberg limit is achievable with state-of-the-art quantum dot devices.

quant-ph↗

arXiv2016

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $λ-$layer has a greater electronic bandgap; pumping with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth.

physics.optics↗