arXiv subjects

Jean-Philippe Banon

Publications and source records attributed to Jean-Philippe Banon.

12 recordsLinked to original sources

arXiv2026

Energy-resolved transport of ultracold atoms across the Anderson transition: theory and experiment

In a recent experiment [X. Yu et al., arXiv:2602.07654], energy-resolved measurements of an atomic matter wave spreading in a speckle potential enabled the direct observation of the three-dimensional Anderson transition. In this work, we present a quantitative theoretical description of the matter-wave dynamics based on a tailored implementation of the self-consistent theory of localization, which incorporates both the spectral and spatial properties of the state prepared in the disorder. We benchmark this theoretical approach against ab initio numerical simulations, and use it to analyze the atom density profiles observed experimentally in the localized, diffusive, and critical regimes. Particular emphasis is placed on the key role of the atomic energy distribution, especially on the distinct contributions of Bose-condensed and thermal atoms to interpret the experimental profiles. Our framework provides a versatile and efficient theoretical toolbox for quantitatively describing wave-packet dynamics in three-dimensional disordered quantum systems, which remain challenging for state-of-the-art large-scale numerical simulations.

cond-mat.quant-gas↗

arXiv2026

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non confining potential with an intrinsic lifetime around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-band gap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations.

cond-mat.mtrl-sci↗

arXiv2026

Direct Observation of the Three-Dimensional Anderson Transition with Ultracold Atoms in a Disordered Potential

Anderson localization of particles -- the complete halt of wave transport through multiple scattering and phase coherence -- is a paradigmatic manifestation of quantum interference in disordered media. In three dimensions, the scaling theory predicts a quantum phase transition at a critical energy, the mobility edge, separating localized from diffusive states and underpinning metal-insulator transitions in electronic systems. Despite decades of experimental efforts, a direct observation of this emblematic transition for matter waves has remained elusive. Previous attempts with ultracold atoms were hindered by strong and uncontrolled energy broadening, resulting in indirect, sometimes inaccurate, and model-dependent estimates of the mobility edge. Here we implement a novel energy-resolved scheme to prepare atomic matter waves with a narrow energy distribution and track their expansion dynamics over long timescales. This allows for a direct observation of the three-dimensional Anderson transition in a laser-speckle disordered potential, and for a precise measurement of the mobility edge that is independent of any underlying theoretical modeling. Our measurements show excellent agreement with state-of-the-art numerical predictions over a wide range of disorder strengths, resolving long-standing discrepancies between prior experiments and theory. Beyond the three-dimensional Anderson transition, our approach opens new avenues for quantitative investigations of quantum critical phenomena in spatially disordered systems, including the roles of dimensionality, symmetry class, and interactions.

cond-mat.quant-gas↗

arXiv2023

Degree of polarization of light scattered from correlated surface and bulk disorders

Using a single-scattering theory, we derive the expression of the degree of polarization of the light scattered from a layer exhibiting both surface and volume scattering. The expression puts forward the intimate connection between the degree of polarization and the statistical correlation between surface and volume disorders. It also permits a quantitative analysis of depolarization for uncorrelated, partially correlated and perfectly correlated disorders. We show that measuring the degree of polarization could allow one to assess the surface-volume correlation function, and that, reciprocally, the degree of polarization could be engineered by an appropriate design of the correlation function.

physics.optics↗

arXiv2023

Haze and light diffraction of dielectric line-gratings

The optical characterization of dielectric periodic line-gratings for which the period of the grating is significantly larger than the probing wavelength is investigated experimentally, numerically, and analytically. The experimental diffraction efficiencies are analyzed in transmission with the help of a closed-form approximate solution within a single scattering picture. In particular, the angular width of significant scattering and the haze are analyzed for samples of increasing grating profile amplitude.

physics.optics↗

arXiv2022

The electronic disorder landscape of mixed halide perovskites

Bandgap tunability of lead mixed-halide perovskites makes them promising candidates for various applications in optoelectronics since they exhibit sharp optical absorption onsets despite the presence of disorder from halide alloying. Here we use localization landscape theory to reveal that the static disorder due to compositional alloying for iodide:bromide perovskite contributes at most 3 meV to the Urbach energy. Our modelling reveals that the reason for this small contribution is due to the small effective masses in perovskites, resulting in a natural length scale of around 20nm for the "effective confining potential" for electrons and holes, with short range potential fluctuations smoothed out. The increase in Urbach energy across the compositional range agrees well with our optical absorption measurements. We model systems of sizes up to 80 nm in three dimensions, allowing us to explore halide segregation, accurately reproducing the experimentally observed absorption spectra and demonstrating the scope of our method to model electronic structures on large length scales. Our results suggest that we should look beyond static contribution and focus on the dynamic temperature dependent contribution to the Urbach energy.

cond-mat.mtrl-sci↗

arXiv2022

Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory

The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able to simulate the optoelectronic response of semiconductor alloys of several tens of nanometer sidelength, while at the same time accounting for the quantum localization effects induced by the compositional disorder at the nano-scale. The model is based on a Wigner-Weyl analysis of the structure of electron and hole eigenstates in phase space made possible by the localization landscape theory. After validation against eigenstates-based computations in 1D and 2D, our model is applied to the computation of light absorption in 3D InGaN alloys of different compositions. We obtain the detailed structures of the absorption tail below the average bandgap and the Urbach energies of all simulated compositions. Moreover, the Wigner-Weyl formalism allows us to define and compute 3D maps of the effective locally absorbed power at all frequencies. Finally the proposed approach opens the way to generalize this method to all energy-exchange processes such as radiative and non-radiative recombination in realistic devices.

cond-mat.dis-nn↗

arXiv2022

Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds

Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribute to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is confirmed by the disappearence at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.

cond-mat.mes-hall↗

arXiv2020

Perfect depolarization in single scattering of light from uncorrelated surface and volume disorder

We demonstrate that single scattering of p-polarized waves from uncorrelated surface and volume disorder can lead to perfect depolarization. The degree of polarization is shown to vanish in specific scattering directions that can be characterized based on simple geometric arguments. Depolarization results from the different polarization response of each source of disorder, providing a clear physical interpretation of the depolarization mechanism.

physics.optics↗

arXiv2019

Physics of polarized light scattering from weakly rough dielectric surfaces: Yoneda and Brewster scattering phenomena

The optical Yoneda and Brewster scattering phenomena are studied theoretically based on pertubative solutions of the reduced Rayleigh equations. The Yoneda phenomenon is characterized as an enhancement of the intensity of the diffuse light scattered by a randomly rough interface between two dielectric media when the light is observed in the optically denser medium. The intensity enhancement occurs above a critical angle of scattering which is independent of the angle of incidence of the excitation. The Brewster scattering phenomenon is characterized by a zero scattered intensity either in the reflected or transmitted light for an angle of scattering which depends on the angle of incidence. We also describe a generalization of the Brewster scattering phenomenon for outgoing evanescent waves and circularly-polarized waves. The physical mechanisms responsible for these phenomena are described in terms of simple notions such as scalar waves, oscillating and rotating dipoles and geometrical arguments, and are valid in a regime of weakly rough interfaces.

physics.optics↗

arXiv2018

Selective enhancement of Selényi rings induced by the cross-correlation between the interfaces of a two-dimensional randomly rough dielectric film

By the use of both perturbative and non-perturbative solutions of the reduced Rayleigh equation, we present a detailed study of the scattering of light from two-dimensional weakly rough dielectric films. It is shown that for several rough film configurations, Selényi interference rings exist in the diffusely scattered light. For film systems supported by dielectric substrates where only one of the two interfaces of the film is weakly rough and the other planar, Selényi interference rings are observed at angular positions that can be determined from simple phase arguments. For such single-rough-interface films, we find and explain by a single scattering model that the contrast in the interference patterns is better when the top interface of the film (the interface facing the incident light) is rough than when the bottom interface is rough. When both film interfaces are rough, Selényi interference rings exist but a potential cross-correlation of the two rough interfaces of the film can be used to selectively enhance some of the interference rings while others are attenuated and might even disappear. This feature may in principle be used in determining the correlation properties of interfaces of films that otherwise would be difficult to access.

physics.optics↗

arXiv2017

On the optimal design of grid-based binary holograms for matter wave lithography

Grid based binary holography (GBH) is an attractive method for patterning with light or matter waves. It is an approximate technique in which different holographic masks can be used to produce similar patterns. Here we present an optimal design method for GBH masks that allows for freely selecting the fraction of open holes in the mask from below 10% to above 90%. Open-fraction is an important design parameter when making masks for use in lithography systems. The method also includes a rescaling feature that potentially enables a better contrast of the generated patterns. Through simulations we investigate the contrast and robustness of the patterns formed by masks generated by the proposed optimal design method. It is demonstrated that high contrast patterns are achievable for a wide range of open-fractions. We conclude that reaching a desired open-fraction is a trade-off with the contrast of the pattern generated by the mask.

physics.optics↗