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Jeff Strasdas

Publications and source records attributed to Jeff Strasdas.

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Evidence for Many-Body States in NiPS$_3$ Revealed by Angle-Resolved Photoelectron Spectroscopy

We present $\mu$-ARPES spectra of the Mott-insulating van der Waals antiferromagnet NiPS$_3$. Signatures of strong correlations -- such as the onset of atomic or atomic-ligand multiplets and spin-orbit-entangled exciton have been observed in this material by various two-particle spectroscopies, but not previously in photoemission. Our measurements reveal a weakly dispersive feature at the valence-band edge that is absent in DFT+$U$ calculations and remains unchanged across the N\'eel transition. After critically examining and ruling out alternative interpretations, we show that an exact diagonalization of a NiS$_6$ cluster yields low-energy final-state configurations of mixed multiplet $d^7$ and $d^8\underline{L}$ character, whose energy differences are consistent with the observed additional feature. This implies that ARPES directly accesses local Ni-S multiplet physics in NiPS$_3$, revealing a many-body structure beyond mean-field theory. Our results confirm that NiPS$_3$ is an excellent model platform in which strong correlations, reduced dimensionality, and covalent metal-ligand bonding jointly shape both two- and single-particle spectroscopies, underscoring the need for a genuinely quantum many-body description of two-dimensional quantum materials.

cond-mat.str-el

Probing the band structure of the strongly correlated antiferromagnet NiPS3 across its phase transition

NiPS3 is an exfoliable van-der-Waals intralayer antiferromagnet with zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related, fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with {\mu}m resolution in combination with DFT+U calculations for that purpose. We identify a characteristic band shift across TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT+U approximations in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

cond-mat.str-el

Identifying band structure changes of FePS3 across the antiferromagnetic phase transition

Magnetic 2D materials enable novel tuning options of magnetism. As an example, the van der Waals material FePS3, a zigzag-type intralayer antiferromagnet, exhibits very strong magnetoelastic coupling due to the different bond lengths along different ferromagnetic and antiferromagnetic coupling directions enabling elastic tuning of magnetic properties. The likely cause of the length change is the intricate competition between direct exchange of the Fe atoms and superexchange via the S and P atoms. To elucidate this interplay, we study the band structure of exfoliated FePS3 by mu m scale ARPES (Angular Resolved Photoelectron Spectroscopy), both, above and, for the first time, below the Neel temperature TN. We find three characteristic changes across TN. They involve S 3p-type bands, Fe 3d-type bands and P 3p-type bands, respectively, as attributed by comparison with density functional theory calculations (DFT+U). This highlights the involvement of all the atoms in the magnetic phase transition providing independent evidence for the intricate exchange paths.

cond-mat.mtrl-sci

Electronic band structure changes across the antiferromagnetic phase transition of exfoliated MnPS$_3$ probed by $\mu$-ARPES

Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the N\'{e}el temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the N\'{e}el temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements.

cond-mat.mtrl-sci

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.

cond-mat.mes-hall