arXiv subjects

Jens Klier

Publications and source records attributed to Jens Klier.

6 recordsLinked to original sources

arXiv2026

Accessibility of doping ranges of semiconductors by terahertz spectroscopy

While established semiconductor measurement techniques such as four-point probe or capacitance-voltage measurements require a physical contact to the material, terahertz spectroscopy is completely contact-free. Its capability to measure the doping of semiconductors is well known, yet the exact doping ranges that are accessible to terahertz spectroscopy are not obvious. Therefore, we introduce a sensitivity metric to clarify whether a semiconductor sample can be characterized in principle by reflection terahertz time-domain spectroscopy. This quantity takes into account the semiconductor material with a certain layer thickness, doping type, and doping level and is based on numerical simulations. In this work, we calculate this sensitivity value for relevant semiconductor materials (SiC, Si, GaN) in realistic layer stacks with up to three layers. It is used to create meaningful heat maps depending on the thicknesses and charge carrier densities of the sample structures of interest. The plausibility of the sensitivity is validated by mapping a variety of measurements with terahertz techniques from us and from other groups onto these heat maps. Based on these, the accessible range of charge carrier densities for terahertz spectroscopy spans roughly from 10$^{15}$ cm$^{-3}$ to 10$^{20}$ cm$^{-3}$, but with dependencies on material, doping type, and sample thickness. Furthermore, the sensitivity value allows for a substantiated assessment of the possible benefits future improvements of photoconductive antennas and terahertz systems could have, which is demonstrated by simulations based on varied bandwidths.

physics.optics↗

arXiv2025

Simultaneous Charge Carrier Density Mapping of SiC Epilayers and Substrates with Terahertz Time-Domain Spectroscopy

With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a contactless characterization. In this work, we simultaneously determine the charge carrier density of SiC epilayers and their substrates in a single measurement over a wide range of about 8x10^(15)$ cm^(-3) to 4x10^(18) cm^(-3) using time-domain spectroscopy in a reflection geometry. Furthermore, inhomogeneities in the samples are detected by mapping the determined charge carrier densities over the whole wafer. Additional theoretical calculations confirm these results and provide thickness-dependent information on the doping range of 4H-SiC, in which terahertz time-domain spectroscopy is capable of determining the charge carrier density.

physics.optics↗

arXiv2024

Terahertz Quantum Imaging

Quantum imaging with undetected photons spatially transfers amplitude and phase information from one spectral region of physical interest to another spectral region that is easy to detect. The photon energy of the two spectral regions can, in principle, be separated by several orders of magnitude. However, quantum imaging with undetected photons has so far only been demonstrated in spectral regions of similar order of magnitude in frequency (and for which cameras are commercially available). Here, we demonstrate amplitude- and phase-sensitive imaging in the terahertz spectral region (1.5 THz center frequency) by detecting only visible photons (center wavelength 662.2 nm, 452.7 THz center frequency) more than two orders of magnitude apart. As a result, terahertz spectral information can be reliably detected with a standard CMOS camera without cooling, achieving a spatial resolution close to the wavelength. By taking advantage of quantum distillation in a nonlinear interferometer, the influence of ubiquitous thermal terahertz photons can be neglected. Our results are in good agreement with numerical simulations of the imaging process and demonstrate the huge potential of this method to address otherwise challenging spectral regions where cameras do not exist.

quant-ph↗

arXiv2024

Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy

Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10$^{-3}$ $Ω$cm to 10$^{2}$ $Ω$cm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution.

physics.optics↗

arXiv2022

Sample thickness measurements by phase-sensitive terahertz upconversion detection

Nonlinear frequency conversion provides an elegant method to detect photons in a spectral range which differs from the pump wavelength, making it highly attractive for photons with inherently low energy. Aside from the intensity of the light, represented by the number of photons, their phase provides important information and enables a plethora of applications. We present a phase-sensitive measurement method in the terahertz spectral range by only detecting visible light. Using the optical interference of frequency-converted photons and leftover pump photons of the involved ultrashort pulses, fast determination of layer-thicknesses is demonstrated. The new method enables phase-resolved detection of terahertz pulses using standard sCMOS equipment while achieving sample measurement times of less than one second with a precision error of less than 0.6%.

physics.optics↗

arXiv2020

Quantum-inspired terahertz spectroscopy with visible photons

Terahertz spectroscopy allows for identifying different isomers of materials, for drug discrimination as well as for detecting hazardous substances. As many dielectric materials used for packaging are transparent in the terahertz spectral range, substances might even be identified if packaged. Despite these useful applications, terahertz spectroscopy suffers from the still technically demanding detection of terahertz radiation. Thus, either coherent time-domain-spectroscopy schemes employing ultrafast pulsed lasers or continuous-wave detection with photomixers requiring two laser systems are used to circumvent the challenge to detect such low-energetic radiation without using cooled detectors. Here, we report on the first demonstration of terahertz spectroscopy, in which the sample interacts with terahertz idler photons, while only correlated visible signal photons are detected - a concept inspired by quantum optics. To generate these correlated signal-idler photon pairs, a periodically poled lithium niobate crystal and a 660 nm continuous-wave pump source are used. After propagating through a single-crystal nonlinear interferometer, the pump photons are separated from the signal radiation by highly efficient and narrowband volume Bragg gratings. An uncooled scientific CMOS camera detects the frequency-angular spectra of the remaining visible signal and reveals terahertz-spectral information in the Stokes as well as the anti-Stokes part of collinear forward generation. Neither cooled detectors nor expensive pulsed lasers for coherent detection are required. We demonstrate spectroscopy on the well-known absorption features in the terahertz spectral range of $α$-lactose monohydrate and para-aminobenzoic acid by detecting only visible photons.

physics.optics↗