arXiv subjects

Jeongwoo Kim

Publications and source records attributed to Jeongwoo Kim.

16 recordsLinked to original sources

arXiv2023

Spin and Valley Polarized Multiple Fermi Surfaces of α-RuCl$_3$/Bilayer Graphene Heterostructure

We report the transport properties of $α$-RuCl$_3$/bilayer graphene heterostructures, where carrier doping is induced by a work function difference, resulting in distinct electron and hole populations in $α$-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant band modifications within the system. In particular, we observe the emergence of spin and valley polarized multiple hole-type Fermi pockets, originating from the spin-selective band hybridization between $α$-RuCl$_3$ and bilayer graphene, breaking the spin degree of freedom. Unlike $α$-RuCl$_3$ /monolayer graphene system, the presence of different hybridization strengths between $α$-RuCl$_3$ and the top and bottom graphene layers leads to an asymmetric behavior of the two layers, confirmed by effective mass experiments, resulting in the manifestation of valley-polarized Fermi pockets. These compelling findings establish $α$-RuCl$_3$ proximitized to bilayer graphene as an outstanding platform for engineering its unique low-energy band structure.

cond-mat.mtrl-sci↗

arXiv2023

Optoelectronic manifestation of orbital angular momentum driven by chiral hopping in helical Se chains

Chiral materials have garnered significant attention in the field of condensed matter physics. Nevertheless, the magnetic moment induced by the chiral spatial motion of electrons in helical materials, such as elemental Te and Se, remains inadequately understood. In this work, we investigate the development of quantum angular momentum enforced by chirality using static and time-dependent density functional theory calculations for an elemental Se chain. Our findings reveal the emergence of an unconventional orbital texture driven by the chiral geometry, giving rise to a non-vanishing current-induced orbital moment. By incorporating spin-orbit coupling, we demonstrate that a current-induced spin accumulation arises in the chiral chain, which fundamentally differs from the conventional Edelstein effect. Furthermore, we demonstrate the optoelectronic detection of the orbital angular momentum in the chiral Se chain, providing a conceptually novel alternative to the interband Berry curvature, which is ill-defined in low dimensions.

cond-mat.mes-hall↗

arXiv2023

Feature Engineering Using File Layout for Malware Detection

Malware detection on binary executables provides a high availability to even binaries which are not disassembled or decompiled. However, a binary-level approach could cause ambiguity problems. In this paper, we propose a new feature engineering technique that use minimal knowledge about the internal layout on a binary. The proposed feature avoids the ambiguity problems by integrating the information about the layout with structural entropy. The experimental results show that our feature improves accuracy and F1-score by 3.3% and 0.07, respectively, on a CNN based malware detector with realistic benign and malicious samples.

cs.CR↗

arXiv2022

SSLEM: A Simplifier for MBA Expressions based on Semi-linear MBA Expressions and Program Synthesis

MBA (mixed boolean and arithmetic) expressions are hard to simplify, so used for malware obfuscation to hinder analysts' diagnosis. Some MBA simplification methods with high performance have been developed, but they narrowed the target to "linear" MBA expressions, which allows efficient solutions based on logic/term-rewriting. However such restrictions are not appropriate for general forms of MBA expressions usually appearing in malware. To overcome this limitation, we introduce a "semi-linear" MBA expression, a new class of MBA expression extended from a linear MBA expression, and propose a new MBA simplifier called "SSLEM", based on a simplification idea of semi-linear MBA expressions and program synthesis

cs.CR↗

arXiv2022

Dynamical mean-field theory study of a ferromagnetic CrI3 monolayer

We have employed one of the well-known many-body techniques, density functional theory plus dynamical mean-field theory (DFT + DMFT), to investigate the electronic structure of ferromagnetic monolayer CrI3 as a function of temperature and hole-doping concentration. The computed magnetic susceptibility follows the Curie's law, indicating that the ferromagnetism of monolayer CrI3 originates from localized magnetic moments of Cr atoms rather than Stoner-type itinerant ones. The DFT + DMFT calculations show a different coherent temperature for each spin component, demonstrating apparent strong spin-dependent electronic correlation effects in monolayer CrI3. Furthermore, we have explored the doping-dependent electronic structure of monolayer CrI3 and found that its electronic and magnetic properties are easily tunable by the hole-doping.

cond-mat.mtrl-sci↗

arXiv2021

Vertical transverse transport induced by hidden in-plane Berry curvature in two dimensions

The discovery of Berry curvature (BC) has spurred a tremendous surge of research into various quantum phenomena such as the anomalous transport of electrons and the topological phases of matter. In two-dimensional crystalline systems, the conventional definition of the BC lacks the in-plane components and thus it cannot explain the transverse transport along the plane-normal direction. Here, we modify the BC to newly provide in-plane components in two dimensions, giving rise to the vertical Hall effects that describe out-of-plane transports in response to in-plane perturbations and their Onsager reciprocity. Our first-principles calculations show that a large in-plane BC can appear even in an atomic-thick GdAg2 monolayer, and a hexagonal BiAg2 monolayer can host a large BC dipole known to vanish in the conventional BC. The quantum transports driven by the hitherto-hidden BC will become more significant in recently emerging two-dimensional platforms, including van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2021

Proceedings of the second MadAnalysis 5 workshop on LHC recasting in Korea

We document the activities performed during the second MadAnalysis 5 workshop on LHC recasting, that was organised in KIAS (Seoul, Korea) on February 12-20, 2020. We detail the implementation of 12 new ATLAS and CMS searches in the MadAnalysis 5 Public Analysis Database, and the associated validation procedures. Those searches probe the production of extra gauge and scalar/pseudoscalar bosons, supersymmetry, seesaw models and deviations from the Standard Model in four-top production.

hep-ph↗

arXiv2019

Prediction of ferroelectricity-driven Berry curvature enabling charge- and spin-controllable photocurrent in tin telluride monolayers

In symmetry-broken crystalline solids, pole structures of Berry curvature (BC) can emerge, and they have been utilized as a versatile tool for controlling transport properties. For example, the monopole component of the BC is induced by the time-reversal symmetry breaking, and the BC dipole arises from a lack of inversion symmetry, leading to the anomalous Hall and nonlinear Hall effects, respectively. Based on first-principles calculations, we show that the ferroelectricity in a tin telluride monolayer produces a unique BC distribution, which offers charge- and spin-controllable photocurrents. Even with the sizable band gap, the ferroelectrically driven BC dipole is comparable to those of small-gap topological materials. By manipulating the photon handedness and the ferroelectric polarization, charge and spin circular photogalvanic currents are generated in a controllable manner. The ferroelectricity in group-IV monochalcogenide monolayers can be a useful tool to control the BC dipole and the nonlinear optoelectronic responses.

cond-mat.mes-hall↗

arXiv2019

Spin-split band hybridization in graphene proximitized with $α$-RuCl$_3$ nanosheets

Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromagnetic insulators has been experimentally established. However, only very little is known about graphene's interaction with antiferromagnetic insulators. Here, we report a low temperature study of the electronic properties of high quality van der Waals heterostructures composed of a single graphene layer proximitized with $α$-RuCl$_3$. The latter is known to become antiferromagnetically ordered below 10 K. Shubnikov de Haas oscillations in the longitudinal resistance together with Hall resistance measurements provide clear evidence for a band realignment that is accompanied by a transfer of electrons originally occupying the graphene's spin degenerate Dirac cones into $α$-RuCl$_3$ band states with in-plane spin polarization. Left behind are holes in two separate Fermi pockets, only the dispersion of one of which is distorted near the Fermi energy due to spin selective hybridization with these spin polarized $α$-RuCl$_3$ band states. This interpretation is supported by our DFT calculations. An unexpected damping of the quantum oscillations as well as a zero field resistance upturn close to the N$é$el temperature of $α$-RuCl$_3$ suggests the onset of additional spin scattering due to spin fluctuations in the $α$-RuCl$_3$.

cond-mat.mtrl-sci↗

arXiv2018

Unraveling materials Berry curvature and Chern-Simons numbers from real-time evolution of Bloch states

Materials can be classified by the topological character of their electronic structure and, in this perspective, global attributes immune to local deformations have been discussed in terms of Berry curvature and Chern numbers. Except for instructional simple models, linear response theories have been ubiquitously employed in calculations of topological properties of real materials. Here we propose a completely different and versatile approach to get the topological characteristics of materials by calculating physical observables from the real-time evolving Bloch states: the cell-averaged current density reveals the anomalous velocities whose integration leads to the conductivity quantum. Results for prototypical cases are shown, including a spin-frozen valley-Hall and a quantum anomalous Hall insulator. The advantage of this method is best illustrated by the example of a quantum spin Hall insulator: the quantized spin Hall conductivity is straightforwardly obtained irrespective of the non-Abelian nature in its Berry curvature. Moreover, the method can be extended to the description of real observables in non-equilibrium states of topological materials.

cond-mat.mes-hall↗

arXiv2018

Effect of distance on photoluminescence quenching and proximity-induced spin-orbit coupling in graphene-WSe2 heterostructures

Spin-orbit coupling (SOC) in graphene can be greatly enhanced by proximity coupling it to transition metal dichalcogenides (TMDs) such as WSe2. We find that the strength of the acquired SOC in graphene depends on the stacking order of the heterostructures when using hexagonal boron nitride (h-BN) as the capping layer, i.e., SiO2/graphene/WSe2/h-BN exhibiting stronger SOC than SiO2/WSe2/graphene/h-BN. We utilize photoluminescence (PL) as an indicator to characterize the interaction between graphene and monolayer WSe2 grown by chemical vapor deposition. We observe much stronger PL quenching in the SiO2/graphene/WSe2/h-BN stack than in the SiO2/WSe2/graphene/h-BN stack, and correspondingly a much larger weak antilocalization (WAL) effect or stronger induced SOC in the former than in the latter. We attribute these two effects to the interlayer distance between graphene and WSe2, which depends on whether graphene is in immediate contact with h-BN. Our observations and hypothesis are further supported by first-principles calculations which reveal a clear difference in the interlayer distance between graphene and WSe2 in these two stacks.

cond-mat.mtrl-sci↗

arXiv2017

Weyl node assisted conductivity switch in interfacial phase change memory with van der Waals interfaces

The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical conductivity two orders of magnitude larger than that of the RESET state. But, its origin remains elusive. Here, we predict the emergence of a Weyl semimetal phase in the SET state induced by the ferroelectric polarization which breaks the crystal inversion symmetry. We show that the giant conductivity enhancement of the SET phase is due to the appearance of gapless Weyl nodes. The Ge-Te- or Sb-Te-terminated surfaces of Weyl semimetal iPCM produce surface states with completely distinctive topology, where the former consists solely of Fermi arcs while the latter consists of both closed Fermi surface and open Fermi arcs. The iPCM with van der Waals interfaces offers an ideal platform for exploiting the exotic Weyl properties for future memory device applications.

cond-mat.mtrl-sci↗

arXiv2016

New class of 3D topological insulator in double perovskite

We predict a new class of three-dimensional topological insulators (TIs) in which the spin-orbit coupling (SOC) can more effectively generate a large band gap at $Γ$ point. The band gap of conventional TI such as Bi$_2$Se$_3$ is mainly limited by two factors, the strength of SOC and, from electronic structure perspective, the band gap when SOC is absent. While the former is an atomic property, we find that the latter can be minimized in a generic rock-salt lattice model in which a stable crossing of bands {\it at} the Fermi level along with band character inversion occurs for a range of parameters in the absence of SOC. Thus, large-gap TI's or TI's comprised of lighter elements can be expected. In fact, we find by performing first-principle calculations that the model applies to a class of double perovskites A$_2$BiXO$_6$ (A = Ca, Sr, Ba; X = Br, I) and the band gap is predicted up to 0.55 eV. Besides, more detailed calculations considering realistic surface structure indicate that the Dirac cones are robust against the presence of dangling bond at the boundary with a specific termination.

cond-mat.mes-hall↗

arXiv2016

Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS$_2$

We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS$_2$-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS$_2$-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be $\sim 0.2 \rm{ps}^{-1}$ and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a `valley-Zeeman' SOC from first-principles calculations. The interplay between these two SOC's can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS$_2$ system provides a possible platform for these novel edge states.

cond-mat.mes-hall↗

arXiv2012

Topological phase transition in Dirac fermionic heterostructures

Materials with non-trivial topology in their electronic structures enforce the existence of helical Dirac fermionic surface states. We discovered emergent topological phases in the stacked structures of topological insulator and band insulator layers where the surface Dirac fermions interact to each other with particular helicity ordering. Using first-principles calculations and a model Lagrangian, we explicitly demonstrated that such helicity ordering occurs in real materials of ternary chalcogen compounds and determines their topological insulating phase. Our results reveal the rich collective nature of interacting surface Dirac fermions, and pave the way for utilizing topological phases for technological devices such as non-volatile memories.

cond-mat.mtrl-sci↗

arXiv2010

Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te

We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surface-like interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topological insulating Sb2Te3 layers in GSTs and can be crucial to the electronic property of the compounds. These interface states are found to be quite resilient to atomic disorders but sensitive to the uniaxial strains. We presented the mechanisms that destroy the topological insulating order in GSTs and investigated the role of Ge migration that is believed to be responsible for the amorphorization of GSTs.

cond-mat.mtrl-sci↗