arXiv subjects

Jesse Maassen

Publications and source records attributed to Jesse Maassen.

26 records · Page 2Linked to original sources

arXiv2016

Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations

Understanding ballistic phonon transport effects in transient thermoreflectance experiments and explaining the observed deviations from classical theory remains a challenge. Diffusion equations are simple and computationally efficient but are widely believed to break down when the characteristic length scale is similar or less than the phonon mean-free-path. Building on our prior work, we demonstrate how well-known diffusion equations, namely the hyperbolic heat equation and the Cattaneo equation, can be used to model ballistic phonon effects in frequency-dependent periodic steady-state thermal transport. Our analytical solutions are found to compare excellently to rigorous numerical results of the phonon Boltzmann transport equation. The correct physical boundary conditions can be different from those traditionally used and are paramount for accurately capturing ballistic effects. To illustrate the technique, we consider a simple model problem using two different, commonly-used heating conditions. We demonstrate how this framework can easily handle detailed material properties, by considering the case of bulk silicon using a full phonon dispersion and mean-free-path distribution. This physically transparent approach provides clear insights into the nonequilibrium physics of quasi-ballistic phonon transport and its impact on thermal transport properties.

cond-mat.mes-hall↗

arXiv2015

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ~20 and ~40 W m$^{-1}$ K$^{-1}$ for black phosphorus films thicker than 15 nm, respectively, and decrease to ~10 and ~20 W m$^{-1}$ K$^{-1}$ as the film thickness is reduced, exhibiting significant anisotropy. The thermal conductivity anisotropic ratio is found to be ~2 for thick black phosphorus films and drops to ~1.5 for the thinnest 9.5-nm-thick film. Theoretical modeling reveals that the observed anisotropy is primarily related to the anisotropic phonon dispersion, whereas the intrinsic phonon scattering rates are found to be similar along the armchair and zigzag directions. Surface scattering in the black phosphorus films is shown to strongly suppress the contribution of long-mean-free-path acoustic phonons.

cond-mat.mes-hall↗

arXiv2015

A Simple Boltzmann Transport Equation for Ballistic to Diffusive Transient Heat Transport

Developing simplified, but accurate, theoretical approaches to treat heat transport on all length and time scales is needed to further enable scientific insight and technology innovation. Using a simplified form of the Boltzmann transport equation (BTE), originally developed for electron transport, we demonstrate how ballistic phonon effects and finite-velocity propagation are easily and naturally captured. We show how this approach compares well to the phonon BTE, and readily handles a full phonon dispersion and energy-dependent mean-free-path. This study of transient heat transport shows i) how fundamental temperature jumps at the contacts depend simply on the ballistic thermal resistance, ii) that phonon transport at early times approach the ballistic limit in samples of any length, and iii) perceived reductions in heat conduction, when ballistic effects are present, originate from reductions in temperature gradient. Importantly, this framework can be recast exactly as the Cattaneo and hyperbolic heat equations, and we discuss how the key to capturing ballistic heat effects is to use the correct physical boundary conditions.

cond-mat.mes-hall↗

arXiv2015

Steady-State Heat Transport: Ballistic-to-Diffusive with Fourier's Law

It is generally understood that Fourier's law does not describe ballistic phonon transport, which is important when the length of a material is similar to the phonon mean-free-path. Using an approach adapted from electron transport, we demonstrate that Fourier's law and the heat equation do capture ballistic effects, including temperature jumps at ideal contacts, and are thus applicable on all length scales. Local thermal equilibrium is not assumed, because allowing the phonon distribution to be out-of-equilibrium is important for ballistic and quasi-ballistic transport. The key to including the non-equilibrium nature of the phonon population is to apply the proper boundary conditions to the heat equation. Simple analytical solutions are derived, showing that i) the magnitude of the temperature jumps is simply related to the material properties and ii) the observation of reduced apparent thermal conductivity physically stems from a reduction in the temperature gradient and not from a reduction in actual thermal conductivity. We demonstrate how our approach, equivalent to Fourier's law, easily reproduces results of the Boltzmann transport equation, in all transport regimes, even when using a full phonon dispersion and mean-free-path distribution.

cond-mat.mes-hall↗

arXiv2011

Scattering approach to backaction in coherent nanoelectromechanical systems

We present theoretical results for the backaction force noise and damping of a mechanical oscillator whose position is measured by a mesoscopic conductor. Our scattering approach is applicable to a wide class of systems; in particular, it may be used to describe point contact position detectors far from the weak tunneling limit. We find that the backaction depends not only on the mechanical modulation of transmission probabilities but also on the modulation of scattering phases, even in the absence of a magnetic field. We illustrate our general approach with several simple examples, and use it to calculate the backaction for a movable, Au atomic point contact modeled by ab initio density functional theory.

cond-mat.mes-hall↗

arXiv2011

Straining Graphene by Chemical Vapour Deposition Growth on Copper

Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of the graphene on copper system as a function of strain.

cond-mat.mtrl-sci↗

arXiv2010

Graphene spintronics: the role of ferromagnetic electrodes

We report a first principles study of spin-transport under finite bias through a graphene-ferromagnet (FM) interface, where FM=Co(111), Ni(111). The use of Co and Ni electrodes achieves spin efficiencies reaching 80% and 60%, respectively. This large spin filtering results from the materials specific interaction between graphene and the FM which destroys the linear dispersion relation of the graphene bands and leads to an opening of spin-dependent energy gaps of roughly 0.4-0.5 eV at the K points. The minority spin band gap resides higher in energy than the majority spin band gap located near the Fermi level, a feature that results in large minority spin dominated currents.

cond-mat.mes-hall↗

arXiv2010

First principles study of electronic transport through a Cu(111)|graphene junction

We report first principles investigations of the nonequilibrium transport properties of a Cu(111)|graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n-graphene TM relative to the pure graphene TM and leads to a distinctive peak in the differential conductance indicating the doping level, a characteristic not observed in pure graphene.

cond-mat.mes-hall↗