arXiv subjects

Jessica Dong

Publications and source records attributed to Jessica Dong.

3 recordsLinked to original sources

arXiv2026

A Low-Cost, Strong, and Ductile Single-Phase Nb-Based Refractory Complex Concentrated Alloy

The development of structural materials capable of sustained operation above 1200 {\deg}C is critical for next-generation energy and aerospace systems; however, Ni-based superalloys are fundamentally constrained by their melting temperatures, while conventional Nb-based refractory alloys are limited by modest specific strength and high cost. Here, we report on the design and mechanical performance of a cost-effective, non-equiatomic refractory complex concentrated alloy (RCCA), Nb45Ta15Ti20V20, engineered to overcome these limitations. Specifically, its specific strength surpasses wrought C-103 and rivals additively manufactured (AM) C-103 at temperatures up to 1300 {\deg}C while maintaining extensive room temperature tensile ductility (>10 %). Coupled with a high melting point (~2167 {\deg}C), reduced density (8.67 g/cc), and a raw material cost of ~$130/kg compared to >$500/kg for wrought C-103 and >$2,500/kg for AM C-103, this alloy delivers superior specific strength-cost efficiency, highlighting the promise of non-equiatomic RCCAs as viable alternatives to commercial refractory alloys.

cond-mat.mtrl-sci↗

arXiv2025

Electronic mobility, doping, and defects in epitaxial $\mathrm{BaZrS_3}$ chalcogenide perovskite thin films

We present the electronic transport properties of $\mathrm{BaZrS_3}$ (BZS) thin films grown epitaxially by gas-source molecular beam epitaxy (MBE). We observe n-type behavior in all samples, with carrier concentration ranging from $4 \times 10^{18}$ to $4 \times 10^{20} \mathrm{cm^{-3}}$ at room temperature (RT). We observe a champion RT Hall mobility of 11.1 $\mathrm{cm^2V^{-1}s^{-1}}$, which is competitive with established thin-film photovoltaic (PV) absorbers. Temperature-dependent Hall mobility data show that phonon scattering dominates at room temperature, in agreement with computational predictions. X-ray diffraction data illustrate a correlation between mobility and stacking fault concentration, illustrating how microstructure can affect transport. Despite the well-established environmental stability of chalcogenide perovskites, we observe significant changes to electronic properties as a function of storage time in ambient conditions. With the help of secondary-ion mass-spectrometry (SIMS) measurements, we propose and support a defect mechanism that explains this behavior: as-grown films have a high concentration of sulfur vacancies that are shallow donors ($\mathrm{V_S^\bullet}$ or $\mathrm{V_S^{\bullet \bullet}}$), which are converted into neutral oxygen defects ($\mathrm{O_S^\times}$) upon air exposure. We discuss the relevance of this defect mechanism within the larger context of chalcogenide perovskite research, and we identify means to stabilize the electronic properties.

cond-mat.mtrl-sci↗

arXiv2024

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.

cond-mat.mtrl-sci↗