arXiv subjects

Jessica L. Thompson

Publications and source records attributed to Jessica L. Thompson.

5 recordsLinked to original sources

arXiv2026

Enhanced Superconductivity in Multilayer FeSe Films by Simplified Molecular Beam Epitaxy

Multi-unit-cell (UC) \b{eta}-FeSe films grown on SrTiO3(100) continue to attract attention because of the significant enhancement in the superconducting transition temperature (Tc) compared to that in bulk FeSe. In prior reports of molecular beam epitaxy (MBE)-grown \b{eta}-FeSe/SrTiO3(100), elaborate growth protocols have been used to achieve enhanced Tc, leading to a general belief that careful pre-treatment of the SrTiO3 substrate and post-growth annealing in ultrahigh vacuum (UHV) are essential. Here, we report a greatly simplified protocol for the MBE growth of superconducting multi-UC \b{eta}-FeSe films on SrTiO3(100), eliminating the need for careful substrate pre-treatment and post-growth UHV annealing while still achieving an enhanced Tc. With appropriate capping, epitaxial films with 14 UC thickness exhibit a zero-resistance transition temperature Tc ~ 20 K in ex situ electrical transport measurements. The MBE optimization process is guided by the growth-parameter dependencies of film morphology and structural properties, as characterized by reflection high-energy electron diffraction, X-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy.

cond-mat.supr-con↗

arXiv2025

Building 3D superconductor-based Josephson junctions using a via transfer approach

The coupling of superconductivity to unconventional materials may lead to novel quantum states and potential applications. Controlling the quality of the superconductor-normal metal interface is of crucial importance to the understanding and engineering of the superconducting proximity effect. In many cases, conventional lithography-based deposition methods introduce undesirable effects. Using the concept of via contact and dry transfer, we have constructed smooth, van der Waals-like contact between 3D superconducting NbN/Pd and graphene with low contact resistance of approximately 130 $\Omega \cdot \mu m$. Gate-tunable supercurrent, Fraunhofer pattern, and Andreev reflections are observed, the properties of which can be understood using an induced superconducting gap $\Delta$' in this planar contact geometry. We discuss potential mechanisms impacting the magnitude of $\Delta$' and suggest ways of further increasing the proximity coupling. This gentle, lithography-free contacting method can be applied to air- and damage-sensitive surfaces to engineer novel superconducting heterostructures.

cond-mat.mes-hall↗

arXiv2024

Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates

GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates using molecular beam epitaxy. It yields smooth thin GaSe films with the rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/3D quasi-van der Waals epitaxial growth.

cond-mat.mtrl-sci↗

arXiv2024

Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth

GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D) strongly-bonded materials, but has also been used as a substrate for layered, van der Waals (vdW)-bonded chalcogenide film growth. However, GaAs(111)B wafers cannot be directly used for growing epitaxial vdW chalcogenide films for two reasons: (1) the GaAs surface has a substantial number of dangling bonds that need to be passivated for vdW layers growth; (2) the substrate surface is covered with a thin epi-ready oxide layer which must be removed before film growth. In this paper, we optimize the method for deoxidizing GaAs(111)B substrates under a Se overpressure and successfully create a smooth, deoxidized, and passivated substrate for subsequent growth of vdW chalcogenide materials. We demonstrate the benefits of this method for the growth of vdW chalcogenide thin films using GaSe as a representative of vdW chalcogenides. In addition, we find that severely aged substrates have difficulty maintaining a smooth surface during the deoxidation and passivation process and cause GaSe crystals to nucleate in random shapes and orientations. We describe a method using water droplet testing to determine the age of the substrate. Finally, X-ray photoelectron spectroscopy (XPS) characterization reveals that the natural aging of GaAs(111)B in the air results in an increase in surface oxides, Ga2O3 and As2O3, while exposure to ultraviolet (UV)-ozone not only enhances the contents of these two oxides but also generates a new oxide, As2O5. Our research contributes to expanding the compatibility of GaAs(111)B with diverse growth materials and the production of high-quality heterostructure devices.

cond-mat.mtrl-sci↗

arXiv2023

Proximity-Induced Superconductivity in Epitaxial Topological Insulator/Graphene/Gallium Heterostructures

The introduction of superconductivity to the Dirac surface states of a topological insulator leads to a topological superconductor, which may support topological quantum computing through Majorana zero modes. The development of a scalable material platform is key to the realization of topological quantum computing. Here we report on the growth and properties of high-quality (Bi,Sb)2Te3/graphene/gallium heterostructures. Our synthetic approach enables atomically sharp layers at both hetero-interfaces, which in turn promotes proximity-induced superconductivity that originates in the gallium film. A lithography-free, van der Waals tunnel junction is developed to perform transport tunneling spectroscopy. We find a robust, proximity-induced superconducting gap formed in the Dirac surface states in 5-10 quintuple-layer (Bi,Sb)2Te3/graphene/gallium heterostructures. The presence of a single Abrikosov vortex, where the Majorana zero modes are expected to reside, manifests in discrete conductance changes. The present material platform opens up opportunities for understanding and harnessing the application potential of topological superconductivity.

cond-mat.mes-hall↗