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Jessica Padilla

Publications and source records attributed to Jessica Padilla.

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Domain-induced control of latent heat in freestanding BaTiO$_3$ membranes

Thin ferroelectric BaTiO$_3$ films often exhibit continuous transitions instead of the first-order behavior of bulk crystals, a discrepancy usually attributed to epitaxial strain or dimensionality. Using quasi-adiabatic nanocalorimetry on freestanding BaTiO$_3$ membranes-free of clamping and substrate heat sinking-we show that domain morphology, not thickness or boundary conditions, controls the transition order. Thick membranes with large, monodomain-like regions display clear latent heat, whereas thinner membranes with dense 180$^{\circ}$ domain patterns show a continuous transition despite undergoing the same tetragonal-cubic structural change confirmed by x-ray diffraction. Piezoresponse force microscopy links this behavior to domain-size evolution, and a Ginzburg-Landau analysis demonstrates how reduced domain size lowers the free-energy barrier, rounding a nominally first-order instability. These results identify domain morphology as the key determinant of ferroelectric transition order in oxide membranes and establish design guidelines for enhancing caloric effects through domain engineering.

cond-mat.mtrl-sci

Switching dynamics and improved efficiency of free-standing antiferroelectric capacitors

We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestanding capacitor membranes exhibit better energy storage density and efficiency.

cond-mat.mtrl-sci

Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity

The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.

cond-mat.mtrl-sci

Photostrictive actuators based on freestanding ferroelectric membranes

Complex oxides offer a wide range of functional properties, and recent advances in fabrication of freestanding membranes of these oxides are adding new mechanical degrees of freedom to this already rich functional ecosystem. Here, we demonstrate photoactuation in freestanding thin film resonators of ferroelectric Barium Titanate (BaTiO3) and paraelectric Strontium Titanate (SrTiO3). The free-standing films, transferred onto perforated supports, act as nano-drums, oscillating at their natural resonance frequency when illuminated by a frequency-modulated laser. The light-induced deflections in the ferroelectric BaTiO3 membranes are two orders of magnitude larger than in the paraelectric SrTiO3 ones. Time-resolved X-ray micro-diffraction under illumination and temperature-dependent and holographic interferometry provide combined evidence for the photostrictive strain in BaTiO3 originating from partial screening of ferroelectric polarization by photo-excited carriers, which decreases the tetragonality of the unit cell. These findings showcase the potential of photostrictive freestanding ferroelectric films as wireless actuators operated by light.

cond-mat.mtrl-sci