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Jheng-Cyuan Lin

Publications and source records attributed to Jheng-Cyuan Lin.

7 recordsLinked to original sources

Revealing the origin of XMCD in an altermagnet via three-dimensional control of spins

Altermagnets are an emerging class of collinear antiferromagnets that exhibit unconventional spin-polarised electronic bands, potentially unlocking new functionalities that do not rely on spin-orbit coupling (SOC). Experimental signatures traditionally associated with spin polarisation, like X-ray magnetic circular dichroism (XMCD), are thus being used as a validation of altermagnetism. However, unlike altermagnetic spin-splitting, these responses require SOC and are not invariant under spin-space rotations. This brings into question the extent to which they can be considered direct signatures of altermagnetism. Here, we exploit the g-wave altermagnet $\alpha$-Fe$_{2}$O$_{3}$ to demonstrate that XMCD is governed precisely by the spin-direction-induced symmetry breaking that altermagnetic spin groups are designed to ignore. Strikingly, the XMCD is highly anisotropic and is decoupled from the weak magnetic canting. We show that this anomalous XMCD can be described by on-site Faraday tensors capturing the locally uncompensated spin-orbital anisotropies - a scenario that can be applied to other altermagnets. Leveraging this, we reconstruct complete vectorial maps of nanoscale textures in $\alpha$-Fe$_{2}$O$_{3}$ thin films, including domain walls and topological solitons, which are promising for building future spintronics and magnonics devices.

cond-mat.mtrl-sci

Room temperature control of axial and basal antiferromagnetic anisotropies using strain

Antiferromagnetic materials are promising platforms for the development of ultra-fast spintronics and magnonics due to their robust magnetism, high-frequency relativistic dynamics, low-loss transport, and the ability to support topological textures. However, achieving deterministic control over antiferromagnetic order in thin films is a major challenge, due to the formation of multi-domain states stabilised by competing magnetic and destressing interactions. Thus, the successful implementation of antiferromagnetic materials necessitates careful engineering of their anisotropy. Here, we demonstrate strain-based robust control over multiple antiferromagnetic anisotropies and nanoscale domains in the promising spintronic candidate a-Fe2O3, at room temperature. By applying isotropic and anisotropic in-plane strains across a broad temperature-strain phase space, we systematically tune the interplay between magneto-crystalline and magneto-elastic interactions. We discover that strain-driven control steers the system towards an aligned antiferromagnetic state, whilst preserving topological spin textures, such as merons, antimerons and bimerons. We directly map the nanoscale antiferromagnetic order using linear dichroic scanning transmission X-ray microscopy integrated with in situ strain and temperature control. A Landau model and micromagnetic simulations reveal how strain reshapes the magnetic energy landscape. These findings suggest that strain could serve as a versatile control mechanism to reconfigure equilibrium or dynamic antiferromagnetic states on demand in a-Fe2O3, paving the way for next-generation spintronic and magnonic devices.

cond-mat.mtrl-sci

A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure

Functionalities in crystalline materials are determined by 3-dimensional collective interactions of atoms. The confinement of dimensionality in condensed matter provides an exotic research direction to understand the interaction of atoms, thus can be used to tailor or create new functionalities in material systems. In this study, a 2-dimensional transition metal oxide monolayer is constructed inside complex oxide heterostructures based on the theoretical predictions. The electrostatic boundary conditions of oxide monolayer in the heterostructure is carefully designed to tune the chemical, electronic, and magnetic states of oxide monolayer. The challenge of characterizing such an oxide monolayer is overcome by a combination of transmission electron microscopy, x-ray absorption spectroscopy, cross-sectional scanning tunneling microscopy, and electrical transport measurements. An intriguing metal-insulator transition associated with a magnetic transition is discovered in the MnO2 monolayer. This study paves a new route to understand the confinement of dimensionality and explore new intriguing phenomena in condensed matters.

cond-mat.mtrl-sci

Holographic imaging of antiferromagnetic domains with in-situ magnetic field

Lensless coherent x-ray imaging techniques have great potential for high-resolution imaging of magnetic systems with a variety of in-situ perturbations. Despite many investigations of ferromagnets, extending these techniques to the study of other magnetic materials, primarily antiferromagnets, is lacking. Here, we demonstrate the first (to our knowledge) study of an antiferromagnet using holographic imaging through the "holography with extended reference by autocorrelation linear differential operation" technique. Energy-dependent contrast with both linearly and circularly polarised x-rays are demonstrated. Antiferromagnetic domains and topological textures are studied in the presence of applied magnetic fields, demonstrating quasi-cyclic domain reconfiguration up to 500 mT.

cond-mat.mes-hall

Spatially reconfigurable topological textures in freestanding antiferromagnetic nanomembranes

Antiferromagnets hosting real-space topological spin textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, to date, they have only been fabricated epitaxially on specific symmetry-matched crystalline substrates, to preserve their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, markedly restricting the scope of fundamental and applied investigations. Here, we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of $α$-Fe$_{2}$O$_{3}$, that can be transferred onto other desirable supports after growth. We develop transmission-based antiferromagnetic vector-mapping to show that these nanomembranes harbour rich topological phenomenology at room temperature. Moreover, we exploit their extreme flexibility to demonstrate three-dimensional reconfiguration of antiferromagnetic properties, driven locally via flexure-induced strains. This allows us to spatially design antiferromagnetic states outside their typical thermal stability window. Integration of such freestanding antiferromagnetic layers with flat or curved nanostructures could enable spin texture designs tailored by magnetoelastic-/geometric-effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.

cond-mat.mtrl-sci

Antiferromagnetic Half-skyrmions and Bimerons at room temperature

In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin torques have thus far inhibited their practical implementations. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling have recently come into intense focus, but their experimental realizations in natural antiferromagnetic systems are yet to emerge. Here, we demonstrate a family of topological antiferromagnetic spin-textures in $α$-Fe$_2$O$_3$ - an earth-abundant oxide insulator - capped with a Pt over-layer. By exploiting a first-order analogue of the Kibble-Zurek mechanism, we stabilize exotic merons-antimerons (half-skyrmions), and bimerons, which can be erased by magnetic fields and re-generated by temperature cycling. These structures have characteristic sizes of the order ~100 nm that can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways to further scaling. Driven by current-based spin torques from the heavy-metal over-layer, some of these AFM textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature.

cond-mat.mtrl-sci

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1, 3, 5-triazine on Cu metal catalyst. By reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1 % to 5.6 %. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron-hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in N-doped graphene sheets.

cond-mat.mes-hall