arXiv subjects

Ji-Yin Wang

Publications and source records attributed to Ji-Yin Wang.

At least 19 recordsLinked to original sources

arXiv2026

Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering

Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of $0.46\,\mathrm{μeV}/\mathrm{\sqrt{Hz}}$ at $1\,\mathrm{Hz}$---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over $\sim$hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.

cond-mat.mes-hall↗

arXiv2026

Microwave Response of the Superconducting Diode Effect in Proximitized Bilayer Graphene Interferometers

Microwave irradiation has emerged as a promising means to tune the superconducting diode effect (SDE) in Josephson junction devices. Previous experimental studies have mainly focused on the adiabatic-driving regime, in which the diode efficiency increases monotonically with microwave power and can approach the ideal value of unity. Beyond this regime, however, the microwave response of the SDE remains largely unexplored experimentally. In this work, we investigate the microwave response of the SDE in bilayer-graphene-based superconducting quantum interference devices (SQUIDs) under a broad range of driving frequencies. We show that increasing the driving frequency changes the response characteristics of the diode efficiency to microwave power--the dependence of the diode efficiency evolves from monotonic enhancement with increasing microwave power in the adiabatic regime to non-monotonic behavior beyond this regime, and ultimately to sign-reversal as well oscillatory characteristics at sufficiently high frequencies. We find that these experimentally observed frequency-dependent power response characteristics of the diode efficiency can be qualitatively captured by simulations based on the resistively shunted junction model using the device current-phase relations extracted from the experiments. These results establish SQUIDs made from bilayer graphene as a versatile platform for studying dynamic properties of superconducting junction devices.

cond-mat.mes-hall↗

arXiv2026

Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot

We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate defines the QD and allows tuning of its coupling to the superconducting leads. The QD exhibits large $g$-factors and strong spin-orbit coupling. Transport measurements reveal Coulomb diamond-shaped differential conductance features with even-odd alternating sizes and pronounced conductance lines associated with the superconducting gap, confirming a few-electron, superconductor-coupled regime. At an odd electron occupation, Kondo signatures emerge, including a zero-bias peak that splits with magnetic field and is logarithmically suppressed at elevated temperatures. We further observe a doublet-singlet quantum phase transition, manifested by a clear change of Andreev bound states from crossing to anticrossing as the coupling strength increases. These results underscore the rich physics of InSb nanosheet QDs and their promise for topological quantum devices.

cond-mat.supr-con↗

arXiv2026

Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions

We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam epitaxy (MBE) and Josephson junction devices are fabricated by contacting the nanowires with Al electrodes. Low-temperature current-bias transport measurements of the Josephson junctions are performed and the measurements show that the devices exhibit gate-tunable supercurrent and excess current. The analysis of excess current indicates that the transparency of the Ge hut nanowire Josephson junctions is as high as 85%. Voltage-bias spectroscopy measurements of the devices show multiple Andreev reflections up to the fourth order. With magnetic field and temperature-dependent measurements of the multiple Andreev reflections, the critical field and the critical temperature of the induced superconductivity in the Josephson junctions are extracted to be ~0.12 T and ~1.4 K. The success in introducing superconductivity into Ge hut nanowires will stimulate their applications in building advanced quantum processors.

cond-mat.mes-hall↗

arXiv2025

Ubiquitous missing first Shapiro step in Al-InSb nanosheet Josephson junctions

The absence of odd-order Shapiro steps is a predicted signature of topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in both putative topological superconducting systems and topologically trivial superconductor-semiconductor Josephson junctions. Here, we revisit this phenomenon in topologically trivial Al-InSb nanosheet Josephson junctions under microwave irradiation. The missing first Shapiro step coincides with a sharp voltage jump during superconducting switching, yet reappears when the jump is lowered and softened by increasing microwave power, temperature, or magnetic field. It also reappears at higher microwave frequencies, consistent with qualitative results from an RSJ model incorporating the sharp jump. These observations indicate that the absence of the first Shapiro step, associated with the sharp switching jump, simply results from their location within the measurement blind region. This work identifies a common but overlooked mechanism underlying the missing first Shapiro step, offering new insights into fractional Josephson effect experiments.

cond-mat.supr-con↗

arXiv2025

Gate Tunable Josephson Diode Effect in Josephson Junctions made from InAs Nanosheets

We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal superconducting switching current as well as non-reciprocal superconducting retrapping current. The strength of the JDE depends on the angle between the in-plane magnetic field and the bias current ($I_{\mathrm{b}}$), reaching its maximum when $B_{\mathrm{xy}} \perp I_{\mathrm{b}}$ and dropping to nearly zero when $B_{\mathrm{xy}}\parallel I_{\mathrm{b}}$. Additionally, the diode efficiency is tunable via an electrostatic gate with a complete suppression at certain gate voltages. Our findings indicate that the observed JDE in InAs nanosheet-based Josephson junctions most likely arises from the Rashba spin-orbit interaction (SOI) in the nanosheets. Such gate-tunable JDE in Josephson junctions made from semiconductor materials with SOI is useful not only for constructing advanced superconducting electronics but also for detecting novel superconducting states.

cond-mat.mes-hall↗

arXiv2025

Tunable superconducting diode effect in higher-harmonic InSb nanosheet interferometers

Superconducting diodes, characterized by the nonreciprocal supercurrent flow, have gained significant attention for their potential in dissipationless electronics. This study presents a superconducting quantum interference device (SQUID) composed of two Al-InSb nanosheet Josephson junctions. Utilizing prepatterned local backgates, we achieve a gate- and flux-tunable superconducting diode with controllable efficiency in both amplitude and sign. Numerical simulations attribute the diode effect to higher harmonics in the current-phase relation. Crucially, fractional Shapiro step experiments provide direct insights into the evolution of these higher harmonics with flux tuning, showcasing significant enhancements in the second-harmonic signatures of the SQUID near half-integer flux quanta. Furthermore, we investigate the microwave-assisted diode response and experimentally show that the polarity of the diode effect can be switched by the microwave power. These results demonstrate the potential of InSb nanosheet-based hybrid devices as highly tunable elements for use in dissipationless electronics.

cond-mat.supr-con↗

arXiv2024

Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields

Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of superconducting diode effect under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the unidirectional superconductivity regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for unidirectional superconductivity that is possibly related to non-equilibrium dynamics or dissipation in periodically driven superconducting systems.

cond-mat.mes-hall↗

arXiv2024

One-dimensional quantum dot array integrated with charge sensors in an InAs nanowire

We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array and corresponding charge stability diagrams are revealed with both direct current measurements and charge sensor signals. The one-dimensional quintuple-quantum-dot array are then tuned up and its charge configurations are fully mapped out with the two charge sensors. The energy level of each dot in the array can be controlled individually by using a compensated gate architecture (i.e., "virtual gate"). After that, four dots in the array are selected to form two double quantum dots and ultra strong inter-double-dot interaction is obtained. A theoretical simulation based on a 4-dimensional Hamiltonian confirms the strong coupling strength between the two double quantum dots. The highly controllable one-dimensional quantum dot array achieved in this work is expected to be valuable for employing InAs nanowires to construct advanced quantum hardware in the future.

cond-mat.mes-hall↗

arXiv2024

Gate-defined quantum point contacts in a germanium quantum well

We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5\,meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get splitted due to the Zeeman effect and Landé $g$ factors are estimated to be $\sim6.6$ for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as a building block.

cond-mat.mes-hall↗

arXiv2023

Supercurrent in the presence of direct transmission and a resonant localized state

We study the current-phase relation (CPR) of an InSb-Al nanowire Josephson junction in parallel magnetic fields up to $700$\,mT. At high magnetic fields and in narrow voltage intervals of a gate under the junction, the CPR exhibits $π$-shifts. The supercurrent declines within these gate intervals and shows asymmetric gate voltage dependence above and below them. We detect these features sometimes also at zero magnetic field. The observed CPR properties are reproduced by a theoretical model of supercurrent transport via interference between direct transmission and a resonant localized state.

cond-mat.mes-hall↗

arXiv2023

Realization of a minimal Kitaev chain in coupled quantum dots

Majorana bound states constitute one of the simplest examples of emergent non-Abelian excitations in condensed matter physics. A toy model proposed by Kitaev shows that such states can arise at the ends of a spinless $p$-wave superconducting chain. Practical proposals for its realization require coupling neighboring quantum dots in a chain via both electron tunneling and crossed Andreev reflection. While both processes have been observed in semiconducting nanowires and carbon nanotubes, crossed-Andreev interaction was neither easily tunable nor strong enough to induce coherent hybridization of dot states. Here we demonstrate the simultaneous presence of all necessary ingredients for an artificial Kitaev chain: two spin-polarized quantum dots in an InSb nanowire strongly coupled by both elastic co-tunneling and crossed Andreev reflection. We fine-tune this system to a sweet spot where a pair of Poor Man's Majorana states is predicted to appear. At this sweet spot, the transport characteristics satisfy the theoretical predictions for such a system, including pairwise correlation, zero charge and stability against local perturbations. While the simple system presented here can be scaled to simulate a full Kitaev chain with an emergent topological order, it can also be used imminently to explore relevant physics related to non-Abelian anyons.

cond-mat.mes-hall↗

arXiv2023

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures, and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating forefront physics, such as the two-dimensional topological superconductivity.

cond-mat.mes-hall↗

arXiv2023

Subgap spectroscopy along hybrid nanowires by nm-thick tunnel barriers

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.

cond-mat.mes-hall↗

arXiv2022

Hard superconducting gap in germanium

The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing.

cond-mat.mes-hall↗

arXiv2022

Impact of junction length on supercurrent resilience against magnetic field in InSb-Al nanowire Josephson junctions

Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity by studying Josephson supercurrent. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied. In this work, we investigate the impact of the length of InSb-Al nanowire Josephson junctions on the supercurrent resilience against magnetic fields. We find that the critical parallel field of the supercurrent can be considerably enhanced by reducing the junction length. Particularly, in 30 nm-long junctions supercurrent can persist up to 1.3 T parallel field - approaching the critical field of the superconducting film. Furthermore, we embed such short junctions into a superconducting loop and obtain the supercurrent interference at a parallel field of 1 T. Our findings are highly relevant for multiple experiments on hybrid nanowires requiring a magnetic field-resilient supercurrent.

cond-mat.mes-hall↗

arXiv2022

Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which show how the states evolve as a function of the aforementioned parameters. Importantly, comparing the diagrams taken for each end of the hybrids enables the identification of states which do not coexist simultaneously, ruling out a significant amount of the parameter space as candidates for a topological phase. Furthermore, altering junction transparencies filters out zero-energy states sensitive to a local gate potential. Such a measurement strategy significantly reduces the time necessary to identify a potential topological phase and minimizes the risk of falsely recognizing trivial bound states as Majorana zero modes.

cond-mat.mes-hall↗

arXiv2021

Radio-frequency C-V measurements with sub-attofarad sensitivity

We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/$\sqHz$ at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/$\sqHz$ at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ.

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