arXiv subjects

Jia-Cai Nie

Publications and source records attributed to Jia-Cai Nie.

At least 19 recordsLinked to original sources

arXiv2026

A chemical avenue to manipulate field-reentrant superconducting rivalries in infinite layer nickelates

Recently, preliminary magnetic field-reentrant superconductivity manifested in high-temperature (Tc) Eu-doped infinite-layer (IL) nickelates, beyond analogous discoveries exclusively in low-Tc systems. This evokes intriguing fundamental issues about potential quantum-phase boundary and criticality between unconventional superconductivity and field-reentrant-one, which are inexplicable owing to formidable challenges in growing IL-nickelates towards later-series rare-earths. Herein, we open up chemical avenues to enable effective growth of (RE1-yRE'y)1-xEuxNiO2 (RE/RE': Pr, Nd, Sm, Gd, Dy), giving rise to discoveries of RE-4f-related quantum competition between high-Tc and reentrant superconductivity. Robust magnetic-field-reentrant superconductivity with uniaxial anisotropy is observed at superconducting-dome boundaries, stemming from Eu2+-4f7 associated competition between magnetic-fluctuation promoted pairing and exchange-field interactions. Their quantum-criticality is further modulable via RE(RE')-magnetism, which either reinforces reentrancy or elevates Tc (40.1 K) with more robust critical-current-density (~266 kA/cm2 at 2 K) beyond Sr-/Ca-doped counterparts. Our synthetic route enables the establishment of an ideal platform via IL-nickelates for studying 4f-related unconventional superconductivity and quantum-criticality.

cond-mat.supr-con↗

arXiv2026

Counterintuitive inverse superconducting transition beyond 4He-cooling limit

Thermally driven quantum-orders observed in exceptional instances may redefine the role of thermal-fluctuation from a source of decoherence to a resource for coherent-state engineering. While preliminary signs of counterintuitive temperature-rise-triggered superconductivity manifested in CeCu2Si2, ErRh4B4, Ho1.2Mo6S8 and (La,Ce)Al2, their critical-temperatures (Tc-inv) remain below Kelvin-range, precluding substantial applications. Here, we report field-modulated inverse-superconducting-transitions above 4He-cooling-limit in Eu-based infinite-layer nickelates (EuxNd1-xNiO2 and EuxPr1-xNiO2) grown on a substrate under both overdoped and underdoped regimes. Paradigmatically, superconductivity with zero-resistance is confined between Tc-inv (2.6-5.4 K) and another higher normal-Tc, rising and decreasing with applied magnetic-field, respectively. Starting from the resistive-state below Tc-inv, the inverse-superconducting-transition is driven by not only temperature-rising, but also current-density, while superconductivity further vanishes at higher temperature and current thresholds. The Kelvin-range inverse superconducting transition is plausibly explained by temperature-induced alternating dominance of effective magnetic-fields arising from Eu2+4f7 related compensations relative to the upper-critical-field. Furthermore, an extended-phenomenological-framework is also supported by reemerged superconductivity below 300 mK under magnetic-field, giving rise to an unprecedented temperature-induced reentrant superconductivity. Our findings establish magnetic-interaction-reconfigured high-Tc systems as fertile platforms for exploring quantum phenomena that reverse thermal-decoherence paradigm, also enabling antithetical-designs to unlock untapped application-scenarios for quantum-phase-transition devices.

cond-mat.supr-con↗

arXiv2025

Spontaneous rotational symmetry breaking induced by electronic instability in the normal state of La_{1-x} Sr_{x} NiO_{2}

The spontaneous rotational symmetry breaking (RSB), a hallmark phenomenon in cuprate and iron-based high-temperature superconductors, is believed to intimately connected to superconductivity, both of which originate from interactions among different degrees of freedoms and competing quantum states. Understanding RSB is pivotal for unraveling the microscopic origin of unconventional superconductivity. Although infinite-layer nickelates (ILNs) share similar crystalline structure and the same nominal 3d-electron configurations with cuprates, they have significant differences in Fermi surface topology, electronic band characteristics, and charge order. These distinctions make ILNs an ideal platform for studying RSB in unconventional superconductors. Through angular-resolved resistivity measurements within a large temperature and doping range, we identify pronounced RSB signatures near doping concentrations x=0.05 and 0.25. Based on the strongly correlated electronic structures from combined density functional theory and dynamical mean field theory calculations, we find that the calculated electronic susceptibility has a peak structure at the corresponding doping concentration, indicating pronounced electronic instabilities which drive RSB. Detailed analysis of the electronic susceptibility demonstrates that the van Hove singularity at the Fermi level significantly contributes to the electronic instability at 0.05 Sr doping. Our findings reveal the important role of electronic correlation, Van Hove singularity, and Fermi surface nesting in the emergence of RSB. Our work not only deepens the understanding of electronic behavior in ILNs, but also provides new ideas and methods for exploring RSB in other unconventional superconductors.

cond-mat.supr-con↗

arXiv2024

Irrelevance of 1H composition to the superconductivity in the infinite-layer nickelates: judging from the MeV energy scale

The discovery of the superconductivity in the infinite-layer nickelates, as topotactically reduced from their respective perovskite percussors via co-annealing with CaH2, extends the understanding in superconductivity. Nevertheless, whether the incorporated 1H composition is critical to the infinite-layer superconductivity recently arouses considerable debates, while the central challenge lies in the quantification of 1H that is easily interfered by the conventional electron or orbital associated processes. Herein, we demonstrate the irrelevance between the superconductivity in the infinite-layer nickelates and their incorporated 1H composition, assisted by nuclear reaction analysis (NRA) and heavy ion energy recoil detection analysis (HIERDA) based on the nuclear interactions at MeV energy scale. These approaches completely overwhelm the conventional interferes, such as ionization, activation and chemical bonds, and achieves the 1H quantification within superconducting La0.8Sr0.2NiO2 (or Nd0.8Sr0.2NiO2). A large diversity of 1H composition far beyond the previously expected critical dome was observed, while their TC were not changed significantly. Furthermore, the superconductivity was demonstrated to be achievable for La0.8Sr0.2NiO2 reduced by Al without any hydrogen associated process, while the superconducting properties for the CaH2 reduced La0.8Sr0.2NiO2 is rather stable after long term exposure in air, despite the high volatility of 1H within oxides. All these results indicate that the 1H incorporation composition is not critical to the superconductivity of the infinite-layer nickelates.

cond-mat.supr-con↗

arXiv2015

Detecting giant electron-hole asymmetry in graphene monolayer generated by strain and charged-defect scattering via Landau level spectroscopy

The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi velocities of electrons and holes are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the and are measured as 1.2 x 106 m/s and 1.02 x106 m/s, respectively. This giant asymmetry originates from enhanced next-nearest-neighbor hopping in the strained region. Around positively charged-defect, we observe opposite electron-hole asymmetry, and the and are measured to be 0.86x 106 m/s and 1.14 x106 m/s, respectively. Such a large asymmetry is attributed to the fact that the massless Dirac fermions in graphene monolayer are scattered more strongly when they are attracted to the charged-defect than when they are repelled from it.

cond-mat.mtrl-sci↗

arXiv2015

Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer

The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by inversion symmetry breaking by the substrate potential, is observed in the graphene on both SiC and graphite substrates. Such a gap splits the n = 0 Landau level (LL) into two levels, 0+ and 0-. We demonstrate that the amplitude of the wavefunction of the 0- LL is mainly at the A sites and that of the 0+ LL is mainly at the B sites of graphene, characterizing the internal structure of the spinor of the n = 0 LL. This provides direct evidence of the two-component nature of massless Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2015

Landau Quantization and Fermi Velocity Renormalization in Twisted Graphene Bilayers

Currently there is a lively discussion concerning Fermi velocity renormalization in twisted bilayers and several contradicted experimental results are reported. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). The interlayer coupling strengths between the adjacent bilayers are measured according to energy separations of two pronounced low-energy van Hove singularities (VHSs) in the STS spectra. We demonstrate that there is a large range of values for the interlayer interaction in different twisted bilayers. Below the VHSs, the observed Landau quantization in the twisted bilayers is identical to that of massless Dirac fermions in graphene monolayer, which allows us to measure the Fermi velocity directly. Our result indicates that the Fermi velocity of the twisted bilayers depends remarkably on both the twisted angles and the interlayer coupling strengths. This removes the discrepancy about the Fermi velocity renormalization in the twisted bilayers and provides a consistent interpretation of all current data.

cond-mat.mtrl-sci↗

arXiv2015

Magnetic-field-assisted electron confinement and valley splitting in strained graphene

Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling microscopy and spectroscopy and identify their spatially modulated Dirac points, demonstrating the effect of overlap of Cu and graphene wave functions on the charge transfer between them5. By applying a magnetic field of 8 Tesla, electron confinement, as revealed by regularly spaced sharp resonances6,7, is observed in the strained graphene. In some regions of the strained graphene, repetitive pairs of resonance peaks appear in the tunnelling spectra. This provides direct and compelling evidence for lifting of valley degeneracy due to the coexistence of both the magnetic field and the pseudomagnetic field.

cond-mat.mtrl-sci↗

arXiv2015

Spatially resolving unconventional interface Landau quantization in a graphene monolayer-bilayer planar junction

Graphene hybrid planar structures consisting of two regions with different quantum Hall (QH) states exhibit unusual transport properties1-5, originating from chiral edge states equilibration at the interface of the two different regions6. Here we present a sub-nanometre-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of a monolayer-bilayer graphene planar junction in the QH regime. The atomically well-defined interface of such a junction allows us to spatially resolve the interface electronic properties. Around the interface, we detect Landau quantization of massless Dirac fermions, as expected in graphene monolayer, below the charge neutrality point Nc of the junction, whereas unexpectedly, only Landau quantization of massive Dirac fermions, as expected in graphene bilayer, is observed above the Nc. The observed unconventional interface Landau quantization arises from the fact that the quantum conductance across the interface is solely determined by the minimum filling factors (number of edge modes) in the graphene monolayer and bilayer regions of the junction6,7.

cond-mat.mes-hall↗

arXiv2015

Electronic Structures and Their Landau Quantizations in Twisted Graphene Bilayer and Trilayer

Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunnelling microscopy and spectroscopy. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced low-energy van Hove singularities (VHSs) in their spectra. Below the VHSs, the observed Landau level quantization in the twisted bilayer is identical to that of massless Dirac fermion in graphene monolayer. Our result demonstrates that both the VHSs and Fermi velocity of the twisted bilayer depends remarkably on the twist angle and the interlayer coupling strength. In the twisted trilayer, we directly observe Landau quantization of massive Dirac fermion with a sizable band gap 105 meV, which results in valley (layer) polarization of the lowest Landau levels. Such a result is similar to the expected Landau quantization in Bernal graphene bilayer with a moderate electric field.

cond-mat.mes-hall↗

arXiv2015

Landau Quantization in Graphene Monolayer, Bernal Bilayer, and Bernal Trilayer on Graphite Surface

Electronic properties of surface areas decoupled from graphite are studied using scanning tunnelling microscopy and spectroscopy. We show that it is possible to identify decoupled graphene monolayer, Bernal bilayer, and Bernal trilayer on graphite surface according to their tunnelling spectra in high magnetic field. The decoupled monolayer and bilayer exhibit Landau quantization of massless and massive Dirac fermions, respectively. The substrate generates a sizable band gap, ~35 meV, in the Bernal bilayer, therefore, the eightfold degenerate Landau level at the charge neutrality point is split into two valley-polarized quartets polarized on each layer. In the decoupled Bernal trilayer, we find that both massless and massive Dirac fermions coexist and its low-energy band structure can be described quite well by taking into account only the nearest-neighbor intra- and interlayer hopping parameters. A strong correlation between the Fermi velocity of the massless Dirac fermions and the effective mass of the massive Dirac fermions is observed in the trilayer. Our result demonstrates that the surface of graphite provides a natural ideal platform to probe the electronic spectra of graphene layers.

cond-mat.mes-hall↗

arXiv2014

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monolayer. Our experimental result indicates that only out-of-plane roughness greater than 0.6 nm of the substrates could induce disturbance in the crystal growth and consequently affect the charge transport. This information would be important in guiding the growth of high-quality epitaxy molecular film.

cond-mat.mtrl-sci↗

arXiv2014

Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy

Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.

cond-mat.mes-hall↗

arXiv2014

Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces

Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.

cond-mat.supr-con↗

arXiv2014

Creating One-dimensional Nanoscale Periodic Ripples in a Continuous Mosaic Graphene Monolayer

In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We also demonstrate that the observed rippling modes are beyond the descriptions of continuum mechanics due to the decoupling of graphene bending and tensional deformations. Scanning tunneling spectroscopy measurements indicate that the nanorippling generates a periodic electronic superlattice and opens a zero-energy gap of about 130 meV in graphene. This result may pave a facile way for tailoring the structures and electronic properties of graphene.

cond-mat.mes-hall↗

arXiv2014

The Tip-Induced Twisted Bilayer Graphene Superlattice on HOPG: Capillary Attraction Effect

We use the tip of the scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on the the highly oriented pyrolytic graphite (HOPG) surface through artifically increasing the tip and sample interaction in humid environment. By this means it is possible to tear apart a graphite sheet againt a step and fold this part onto the HOPG surface and thus generate the gaphene superlattices with hexagonal symmetry. The tip and sample surface interactions, including the van der Waals force, eletrostatic force and capillary attraction force originating from the Laplace pressure due to the formation of a highly curved fluid meniscus connecting the tip and sample, are discussed in details to understand the fromation mechnism of graphen superlattice induced by the STM tip. Especially, the capillary force is the key role in manipulating the graphite surface sheet in the hunmidity condition. Our approach may provides a simple and feasible route to prepare the controllable superlattices and graphene nanoribbons but also replenish and find down the theory of generation of graphene superlattice on HOPG surface by the tip.

physics.chem-ph↗

arXiv2014

Angle-Dependent van Hove Singularities and Their Breakdown in Twisted Graphene Bilayers

The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sublayer graphene not only plays the role of a substrate, but also acts as an equivalent role as the top graphene layer in the structure. Here we report the electronic spectra of slightly twisted graphene bilayers studied by scanning tunneling microscopy and spectroscopy. Our experiment demonstrates that twist-induced van Hove singularities are ubiquitously present for rotation angles theta less than about 3.5o, corresponding to moiré-pattern periods D longer than 4 nm. However, they totally vanish for theta > 5.5o (D < 2.5 nm). Such a behavior indicates that the continuum models, which capture moiré-pattern periodicity more accurately at small rotation angles, are no longer applicable at large rotation angles.

cond-mat.mtrl-sci↗

arXiv2014

Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries

Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot.

cond-mat.mes-hall↗