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Jia-Liang Xie

Publications and source records attributed to Jia-Liang Xie.

3 recordsLinked to original sources

Birefringence-Driven Anisotropic $α$-MoO3 Optical Cavities

Many anisotropic layered materials, despite their strong in-plane birefringence, exhibit substantial visible absorption, which severely restricts cavity lengths and hinders the observation of purely birefringence-governed optical phenomena. Here, we realize a birefringence-driven anisotropic optical cavity using $α$-MoO3 flakes, capitalizing on their ultralow optical loss and pronounced in-plane birefringence. Using angle-resolved polarized Raman (ARPR) spectroscopy, we observe a mode-sensitive enhancement of anisotropy, dependent on both flake thickness and Raman shift. A unified model that incorporates the intrinsic Raman tensor, birefringence, and chromatic dispersion accurately reproduces the experimental data, elucidating how cavity resonances at both excitation and scattered wavelengths interact. Within this framework, the intrinsic phonon anisotropy is quantified, providing invaluable insights for accurately predicting ARPR responses and identifying crystallographic orientation. This work provides fundamental insights into birefringence-governed cavities and opens avenues for high-performance birefringent optics and cavity-enhanced anisotropic phenomena.

physics.optics↗

Quantitatively predicting angle-resolved polarized Raman intensity of anisotropic layered materials

Angle-resolved polarized Raman (ARPR) spectroscopy provides insights into optical anisotropy and symmetry-related electron-photon/electron-phonon couplings of anisotropic layered materials (ALMs). However, since their discovery over ten years ago, ARPR responses in ALM flakes has exhibited a puzzling dependence on flake thickness, excitation wavelength, and dielectric environment, complicating their understanding and prediction. By taking black phosphorus (BP) (large than 20 nm) flakes and four-layer Td-WTe2 as examples, this study introduces intrinsic Raman tensors (Rint) and proposes strategies to predict the ARPR intensity profiles of thick and atomically-thin ALM flakes by considering birefringence, linear dichroism and multilayer interference inside multilayered structures with experimentally determined complex refractive indexes along in-plane axes and complex tensor elements of Rint for the corresponding phonon modes. The tensor elements of effective Raman tensors (Reff), which are directly linked to the polarization vectors of incident and scattered light outside the ALM surface, were derived to quantitatively predict ARPR intensity for these ALM flakes, showing intricate dependence on ALM thickness, dielectric substrates, and excitation wavelengths. This framework can be extended to other ALM flakes from atomically-thin layers to bulk limit, facilitating comprehensive prediction of their ARPR intensity regardless of layer-dependent electronic properties.

cond-mat.mes-hall↗

Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity Effects

We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the spatial coherence of photon and phonon fields on the phonon excitation via photon/phonon cavity engineering.

cond-mat.mtrl-sci↗