arXiv subjects

Jia-Wen Li

Publications and source records attributed to Jia-Wen Li.

17 recordsLinked to original sources

arXiv2026

Jet Power, Bulk Lorentz Factor, Black Hole Spin, and Magnetic Field of Accretion Disk in Jetted Active Galactic Nuclei: A Large Gamma-Ray Emission Sample

We present a catalog of physical parameters for powerful jet-accretion disk-black hole systems in one of the largest samples of gamma-ray emitting jetted active galactic nuclei (AGNs), including jet kinetic and radiative powers, jet radiative efficiencies, bulk Lorentz factors, black hole spins, accretion-disk magnetic fields and Compton dominance. Comparing jet kinetic power estimators for blazars, values derived from spectral energy distribution (SED) fitting tend to exceed those estimated via cavity power and other scaling relations. For radiatively efficient AGNs, most sources are inferred to possess high spins; for radiatively inefficient AGNs, many potentially have high spins, though some may differ. This indicates that black hole spin does not effectively distinguish radiatively efficient from inefficient jetted AGNs. Our results suggest accretion-disk magnetic field strength as a key discriminator, proposing a tentative dividing value of $\approx 10^{3.9}$ Gauss between radiatively efficient and inefficient populations. Jet power and bulk Lorentz factor exhibit significant correlations with black hole mass in radiatively efficient AGNs, while weak-to-moderate correlations are observed in radiatively inefficient AGNs within narrow accretion-rate bins. Our analysis reveals that jet power correlates with both disk luminosity and magnetic field strength. Furthermore, correlations linking Eddington ratio and Compton dominance with jet properties are consistent with the jet-accretion connection. Finally, jet radiative power and bulk Lorentz factor show a potential dependence on black hole spin. These results are consistent with the scenario in which jets are powered and accelerated by energy extraction from rapidly spinning black holes via accretion-disk magnetic fields.

astro-ph.HE↗

arXiv2026

A Unified Graph Neural Network Framework for Non-Equilibrium Carrier and Lattice Dynamics Driven by Electric Fields

Finite-temperature simulations of electric-field-driven dynamics need a unified description of interatomic interactions, local electronic states, and configuration-dependent electric responses. First-principles simulations remain scale-limited, whereas conventional machine-learning potentials lack electric-field effects. Recent machine-learning frameworks have incorporated electric-field response or atom-resolved electronic-state information, but rarely both within a single framework. Here, we develop an electric-field-response graph neural network (EFR-GNN) that predicts energies, forces, Born effective charge tensors, atom-resolved charges and magnetic moments, and supports long-time field-driven molecular dynamics with atom-resolved tracking of localized electronic states. In hole-doped MgO, static fields rectify thermally activated hole-polaron hopping through a forward--backward asymmetry quantified by a nearest-neighbor model. In GaAs, resonant terahertz excitation generates a coherent $Γ$-point transverse-optical phonon with dephasing consistent with experiment, while opposite helicities reverse its rotation. In superionic $α$-AgI, it reproduces temperature-dependent Ag$^+$ mobility and collective field-driven ionic drift. Together, EFR-GNN offers an approach to finite-temperature simulations of field-driven atomic and localized-carrier dynamics.

physics.comp-ph↗

arXiv2026

Bilateral hydrogenation induced high-Chern-number quantum anomalous Hall state in monolayer Cr$_2$Ge$_2$Te$_6$

The pursuit of high-temperature quantum anomalous Hall (QAH) insulators faces fundamental challenges, including narrow topological gaps and low Curie temperatures ($T_C$) in existing materials. Here, we propose a strategy using bilateral hydrogenation to engineer a robust QAH state in the topologically trivial ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$ via covalent orbital reconstruction. First-principles calculations reveal that by rewiring the orbital hybridization network, hydrogenation alters orbital occupations to shift preexisting Dirac points, originally embedded in the conduction bands, to the vicinity of the Fermi level in Cr$_2$Ge$_2$Te$_6$H$_6$. This electronic restructuring, coupled with spin-orbit coupling, opens a global topological gap of 118.1 meV, establishing a robust QAH state with Chern number $C=3$. Concurrently, this orbital reconstruction tunes the energy difference between the ligand $p$ and transition metal $d$ orbitals. This shift enhances ferromagnetic superexchange via the $d{z^2}-p_z-d_{xz}$ channel, strengthening the nearest-neighbor coupling $J_1$ by 3.06 times and switching $J_2$ from antiferromagnetic to ferromagnetic. Monte Carlo simulations based on extracted exchange parameters indicate a pronounced enhancement of ferromagnetic stability compared with pristine Cr$_2$Ge$_2$Te$_6$. While absolute Curie temperatures depend on the mapping to an effective spin model and represent relative trends, the enhanced stability after hydrogenation is a salient effect. This work establishes targeted orbital reconstruction driven by surface hydrogenation as a powerful route to simultaneously control topology and magnetism in 2D materials, providing a general route to engineer QAH phases with large gaps and high Chern numbers in van der Waals ferromagnetic semiconductors.

cond-mat.mes-hall↗

arXiv2026

Domain-Wall-Mediated Ultralow-Barrier Sliding and Pinning in Ferroelectric Moiré Superlattices Revealed by Machine Learning

Sliding ferroelectrics built from stacked nonpolar monolayers enable out-of-plane polarization and unconventional switching via interlayer sliding, yet the microscopic sliding dynamics remain unclear. Using machine-learning molecular dynamics, we reveal spontaneous thermally driven interlayer sliding in ferroelectric MoS2 moiré superlattices, with relative velocities on the order of 1 m/s at 300 K. Instead of rigid translation of the entire bilayer, the motion appears as a global drift of the moiré pattern. Such thermally driven sliding is inconsistent with the meV/atom-scale rigid-sliding barrier. In contrast, when constrained relaxation is allowed, the sliding proceeds along an almost barrierless pathway that directly reproduces the global drift of the moiré pattern. Furthermore, sulfur vacancies trigger a sliding-to-pinning transition, with about 0.1% S vacancies already sufficient to convert the long-range sliding into localized oscillations. Notably, these phenomena are not restricted to small twist angles, but arise generically in twisting-induced multidomain structures. These results reveal that the sliding process is governed by a domain-wall-mediated collective reconstruction pathway with an ultralow barrier, rather than rigid layer translation, deepening the understanding of microscopic dynamics in moiré superlattices and sliding ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2025

Diameter-Controlled High-Order Vortex States and Magnon Hybridization in VSe2 Nanotubes

Curved magnets offer a rich phase diagram and hold great promise for next-generation spintronic technologies. This study establishes the paramount significance of high-order vortex states (e.g., 3$φ$ with winding number $n$ > 1) in VSe2 nanotubes, which uniquely enable magnonic functionalities fundamentally inaccessible to conventional magnetic systems. These states arise from diameter-dependent competition between the nearest-neighbor ferromagnetic ($J_1$) and longer-range antiferromagnetic ($J_2$/$J_3$) couplings, as rigorously validated through density-functional theory calculations and Heisenberg modeling of phase diagrams. Critically, by the Landau-Lifshitz-Gilbert equation, we find that high-order vortex configurations unlock an intrinsic hybridization mechanism governed by strict orbital angular momentum (OAM) selection rules ($Δl = \pm 2(n-1)$) -- a process strictly forbidden in fundamental vortices ($n$ = 1) -- generating complex high-OAM magnons with measurable topological charge. This is vividly demonstrated in the 3$φ$ state, where hybridization between $l$ = -4, 0 and 4 modes produces eight-petal magnon density patterns. Such states provide an essential platform-free solution for generating high-OAM magnons, wchich is crucial for spin-wave-based information transport. These findings establish a predictive theoretical framework for controlling high-order vortex states in curved magnets and highlight VSe2 nanotubes as a promising platform for exploring complex magnetism and developing future magnonic and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Intercalation-Induced Near Room-Temperature Ferromagnetism in CrI3 via Synergistic Exchange Pathways

The development of room-temperature magnetic semiconductors is critical for advancing spintronic technologies, yet van der Waals magnets like CrI3 exhibit intrinsically low Curie temperatures (Tc = 45 K). This study employs first-principles calculations to demonstrate that atom intercalation, particularly lithium (Li), dramatically enhances magnetic exchange couplings in CrI3, achieving near room-temperature ferromagnetism with a predicted Tc of 286 K-aligning with experimental reports of 420 K. The underlying mechanism involves synergistic superexchange and double-exchange interactions: intercalation reduces the |Ep-Ed| energy difference between iodine p-orbitals and chromium d-orbitals, strengthening superexchange pathways, while charge transfer induces valence mixing (e.g., Cr3+ to Cr2+, as confirmed by experimental X-ray photoelectron spectrometry data), promoting double-exchange. Theoretical predictions extend to other intercalants including Cu and Na, with Cu0.25CrI3 and Na0.25CrI3 exhibiting Tc of 267 K and 247 K, respectively, establishing a versatile strategy for designing high-Tc magnetic semiconductors. This work bridges theoretical insights with experimental validation, offering a transferable framework for intercalation-driven material design and accelerating practical spintronic device realization.

cond-mat.mtrl-sci↗

arXiv2025

Ferroelectric control of bipolar magnetic semiconductor with room Curie temperature

The development of room-temperature tunable magnetic semiconductors is crucial for the advancement of low-power, high-performance information technologies. Using density functional theory calculations, we propose a series of two-dimensional magnetic semiconductors with critical temperature above room temperature, including three ferromagnetic and two antiferromagnetic semiconductors.Their stability is confirmed through phonon spectra, molecular dynamics simulations, and formation energy calculations. In particular, we demonstrate a ferromagnetic bipolar magnetic semiconductor (BMS), Cr2NiSe4, formed via Ni intercalation into bilayer CrSe2, which exhibits a 0.40 eV band gap and a Curie temperature of 352 K. Nonvolatile carrier spin polarization control in Cr2NiSe4 is achieved by switching the ferroelectric polarization of an Al2Se3 substrate. Switching the ferroelectric state of monolayer Al2Se3 induces a BMS-to-half-metal transition. Reversing the polarization of bilayer Al2Se3 yields a half-metallic Cr2NiSe4 with fully opposite carrier spin polarization. Furthermore, we propose a multiferroic nonvolatile memory design: write operations are controlled by the ferroelectric polarization state of bilayer Al2Se3, while read operations rely on detecting the distinct carrier spin polarizations of Cr2NiSe4. Our work reports a two dimensional BMS with Curie temperature above room temperature and presents a feasible strategy for its nonvolatile electrical control.

cond-mat.mtrl-sci↗

arXiv2025

Enhancement of temperature of quantum anomalous Hall effect in two-dimensional germanene/magnetic semiconductor heterostructures

Quantum anomalous Hall effect (QAHE) is significant for future low-power electronics devices, where a main challenge is realizing QAHE at high temperatures. In this work, based on experimentally reported two-dimensional (2D) germanene and magnetic semiconductors Cr$_2$Ge$_2$Te$_6$ and Cr$_2$Si$_2$Te$_6$, and the first principle calculations, germanene/magnetic semiconductor heterostructures are investigated. Topologically nontrivial edge states and quantized anomalous Hall conductance are demonstrated. It is shown that the QAHE temperature can be enhanced to approximately 62 K in germanene/monolayer (ML) Cr$_2$Ge$_2$Te$_6$ with 2.1\% tensile strain, 64 K in germanene/bilayer (BL) Cr$_2$Ge$_2$Te$_6$ with 1.4\% tensile strain, and 50 K in germanene/ML Cr$_2$Si$_2$Te$_6$ with 1.3\% tensile strain. With increasing tensile strain of these heterostructures, the band gap decreases and the Curie temperature rises, and the highest temperature of QAHE is obtained. Since these 2D materials were discovered in recent experiments, our results provide promising materials for achieving high-temperature QAHE.

cond-mat.mes-hall↗

arXiv2025

High Curie temperature in diluted magnetic semiconductors (B, Mn)X (X = N, P, As, Sb)

Doping nonmagnetic semiconductors with magnetic impurities is a feasible way to obtain diluted magnetic semiconductors (DMSs). It is generally accepted that for the most extensively studied DMS, (Ga, Mn)As, its highest Curie temperature T$_{\text{C}}$ was achieved at 200 K with a Mn concentration of approximately 16\% in experiments. A recent experiment reported record-breaking high electron and hole mobilities in the semiconductor BAs [\href{https://www.science.org/doi/10.1126/science.abn4290}{Science 377, 437 (2022)}]. Since BAs shares the same zinc-blende structure with GaAs, here we predict four DMSs (B, Mn)X (X $=$ N, P, As, Sb) by density functional theory calculations. Using a rescaling method to diminish the overestimation of Curie temperature, our results indicate that a significantly higher T$_{\text{C}}$ in the range of 467 K to 485 K for (B, Mn)As with a Mn concentration of around 15.6\% and even higher T$_{\text{C}}$ values above the room temperature for (B, Mn)P with a Mn concentration exceeding 9.4\%. Furthermore, using the method of Ab initio Scattering and Transport (AMSET) with first-principles material parameters, we have predicted a hole mobility of 48.9 cm$^{\text{2}}$V$^{\text{-1}}$s$^{\text{-1}}$ at 300 K for (B, Mn)As with the hole concentration of about n$_{\text{h}}$ $=$ 4.2 $\times$ 10$^{\text{19}}$ cm$^{\text{-3}}$, which is about two times larger than the hole mobility at 300 K in the calculations for (Ga, Mn)As. The hole mobility of (B, Mn)As can be enhanced faster than that of (Ga, Mn)As when the hole concentration is decreased. Our findings predict the emergence of a new family of DMS, (B, Mn)X, and are expected to stimulate both experimental and theoretical studies of the DMS with possible high T$_{\text{C}}$.

cond-mat.mtrl-sci↗

arXiv2024

Magnetic Flux Transport in Advection Dominated Accretion Flow Towards the Formation of Magnetically Arrested Disk

The magnetically arrested disks (MADs) have attracted much attention in recent years. The formation of MADs are usually attributed to the accumulation of a sufficient amount of dynamically significant poloidal magnetic flux. In this work, the magnetic flux transport within an advection dominated accretion flow and the formation of a MAD are investigated. The structure and dynamics of an inner MAD connected with an outer ADAF are derived by solving a set of differential equations with suitable boundary conditions. We find that an inner MAD disk is eventually formed at a region about several ten Schwarzschild radius outside the horizon. Due to the presence of strong large-scale magnetic field, the radial velocity of the accretion flow is significantly decreased. The angular velocity of the MAD region is highly subkeplerian with $Ω\sim (0.4-0.5)Ω_{\rm K}$ and the corresponding ratio of gas to magnetic pressure is about $β\lesssim 1$. Also, we find that MAD is unlikely to be formed through the inward flux advection process when the external magnetic field strength weak enough with $β_{\rm out}\gtrsim 100$ around $R_{\rm out}\sim 1000R_{\rm s}$. Based on the rough estimate, we find that the jet power of a black hole, with mass $M_{\rm BH}$ and spin $a_*$, surrounded by an ADAF with inner MAD region is about two order of magnitude larger than that of a black hole surrounded by a normal ADAF. This may account for the powerful jets observed in some Fanaroff Riley type I galaxies with a very low Eddington ratio.

astro-ph.HE↗

arXiv2024

Two-dimensional room temperature ferromagnetic semiconductors

To realize ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayers MnSe2 and Cr3Te6. In this paper, by the density functional theory (DFT) calculations, we proposed a way to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals. High TC ferromagnetic semiconductors are predicted in the monolayers (Mn, D)Se2 and (Cr, D)3Te6, where element D is taken as vacancy, 3d, 4d and 5d transition metal elements. For the concentrations of D from 1/9 to 1/3, there are about 10 ferromagnetic semiconductors with TC above 200 K, including (Cr5/6, W1/6)3Te6 and (Cr4/6, Mo2/6)3Te6 with TC above 300 K. In addition, Mn(Se6/8, Sb2/8)2 is also predicted to be a 2D ferromagnetic semiconductor with TC above 300 K. Considering the fast developments on fabrication and manipulation of 2D materials, our theoretical results propose a way to explore the high temperature ferromagnetic semiconductors from experimentally obtained 2D high temperature ferromagnetic metals through element replacement approach.

cond-mat.mtrl-sci↗

arXiv2024

Antiferromagnetic Ground State, Charge Density Waves and Oxygen Vacancies Induced Metal-Insulator Transition in Pressurized La$_{3}$Ni$_{2}$O$_{7}$

La$_{3}$Ni$_{2}$O$_{7}$ has garnered widespread interest recently due to its high-temperature superconductivity under pressure, accompanied by charge density wave (CDW) ordering and metal-insulator (MI) transitions in the phase diagram. Here, we reveal with comprehensive calculations that La$_{3}$Ni$_{2}$O$_{7}$ possesses an antiferromagnetic ground state under both low and high pressures, with the strong Fermi surface nesting contributed by the flat band that leads to phonon softening and electronic instabilities. Several stable CDW orders with oxygen octahedral distortions are identified, which can trigger the MI transitions. The estimated CDW transition temperature ($\approx$120 K) at ambient pressure agrees nicely with experimental results. In the presence of apical oxygen vacancies, we identify two different phases, say, half distortion and full distortion phases, respectively, and their competition can lead to a pressure-induced MI transition, in good agreement with experimental observations. In addition, we find that the electron-phonon coupling is too small to contribute to superconductivity. These results appear to indicate an unconventional superconducting pairing mechanism mediated by antiferromagnetic fluctuations. A phase diagram that is consistent with the experimental results is given. The present results not only explain the origins of experimentally observed CDW and MI transitions, but also provide insight for deeply understanding the properties like superconductivity, CDW and the role of oxygen vacancies in pressurized La$_{3}$Ni$_{2}$O$_{7}$.

cond-mat.supr-con↗

arXiv2023

Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2

To realize room temperature ferromagnetic semiconductors is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayer MnSe2. In this paper, we proposed a way to obtain room temperature ferromagnetic semiconductors through metal-semiconductor transition. By the density functional theory calculations, a room temperature ferromagnetic semiconductor is obtained in monolayer MnSe2 with a few percent tensile strains, where a metal-semiconductor transition occurs with 2.2% tensile stain. The tensile stains raise the energy of d orbitals of Mn atoms and p orbitals of Se atoms near the Fermi level, making the Fermi level sets in the energy gap of bonding and antibonding states of these p and d orbitals, and opening a small band gap. The room temperature ferromagnetic semiconductors are also obtained in the heterostructures MnSe2/X (X = Al2Se3, GaSe, SiH, and GaP), where metal-semiconductor transition happens due to the tensile strains by interface of heterostructures. In addition, a large magneto-optical Kerr effect (MOKE) is obtained in monolayer MnSe2 with tensile strain and MnSe2-based heterostructures. Our theoretical results pave a way to obtain room temperature magnetic semiconductors from experimentally obtained 2D room temperature ferromagnetic metals through metal-semiconductor transitions.

cond-mat.mtrl-sci↗

arXiv2023

High temperature ferrimagnetic semiconductors by spin-dependent doping in high temperature antiferromagnets

To realize room temperature ferromagnetic (FM) semiconductors is still a challenge in spintronics. Many antiferromagnetic (AFM) insulators and semiconductors with high Neel temperature $T_N$ are obtained in experiments, such as LaFeO$_3$, BiFeO$_3$, etc. High concentrations of magnetic impurities can be doped into these AFM materials, but AFM state with very tiny net magnetic moments was obtained in experiments, because the magnetic impurities were equally doped into the spin up and down sublattices of the AFM materials. Here, we propose that the effective magnetic field provided by a FM substrate could guarantee the spin-dependent doping in AFM materials, where the doped magnetic impurities prefer one sublattice of spins, and the ferrimagnetic (FIM) materials are obtained. To demonstrate this proposal, we study the Mn-doped AFM insulator LaFeO$_3$ with FM substrate of Fe metal by the density functional theory (DFT) calculations. It is shown that the doped magnetic Mn impurities prefer to occupy one sublattice of AFM insulator, and introduce large magnetic moments in La(Fe,Mn)O$_3$. For the AFM insulator LaFeO$_3$ with high $T_N$ = 740 K, several FIM semiconductors with high Curie temperature $T_C >$ 300 K and the band gap less than 2 eV are obtained by DFT calculations, when 1/8 or 1/4 Fe atoms in LaFeO$_3$ are replaced by the other 3d, 4d transition metal elements. The large magneto-optical Kerr effect (MOKE) is obtained in these LaFeO$_3$-based FIM semiconductors. In addition, the FIM semiconductors with high $T_C$ are also obtained by spin-dependent doping in some other AFM materials with high $T_N$, including BiFeO$_3$, SrTcO$_3$, CaTcO$_3$, etc. Our theoretical results propose a way to obtain high $T_C$ FIM semiconductors by spin-dependent doping in high $T_N$ AFM insulators and semiconductors.

cond-mat.mtrl-sci↗

arXiv2023

Two-dimensional Heisenberg models with materials-dependent superexchange interactions

The two-dimensional (2D) van der Waals ferromagnetic semiconductors, such as CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, and the 2D ferromagnetic metals, such as Fe$_3$GeTe$_2$ and MnSe$_2$, have been obtained in recent experiments and attracted a lot of attentions. The superexchange interaction has been suggested to dominate the magnetic interactions in these 2D magnetic systems. In the usual theoretical studies, the expression of the 2D Heisenberg models were fixed by hand due to experiences. Here, we propose a method to determine the expression of the 2D Heisenberg models by counting the possible superexchange paths with the density functional theory (DFT) and Wannier function calculations. With this method, we obtain a 2D Heisenberg model with six different nearest-neighbor exchange coupling constants for the 2D ferromagnetic metal Cr$_3$Te$_6$, which is very different for the crystal structure of Cr atoms in Cr$_3$Te$_6$. The calculated Curie temperature Tc = 328 K is close to the Tc = 344 K of 2D Cr$_3$Te$_6$ reported in recent experiment. In addition, we predict two stable 2D ferromagnetic semiconductors Cr$_3$O$_6$ and Mn$_3$O$_6$ sharing the same crystal structure of Cr$_3$Te$_6$. The similar Heisenberg models are obtained for 2D Cr$_3$O$_6$ and Mn$_3$O$_6$, where the calculated Tc is 218 K and 208 K, respectively. Our method offers a general approach to determine the expression of Heisenberg models for these 2D magnetic semiconductors and metals, and builds up a solid basis for further studies.

cond-mat.mtrl-sci↗

arXiv2021

The dynamical structure of the outflows driven by a large-scale magnetic field

Large-scale magnetic field is crucial in launching and collimating the jets/outflows. It is found that the magnetic flux can be efficiently transported inward by the fast moving corona above a thin disk. In this work we investigate the dynamical structure of the outflows driven by the large-scale magnetic field advected by the hot corona. With derived large-scale magnetic field, the outflow solution along every field line is obtained by solving a set of magneto-hydrodynamical (MHD) Equations self-consistently with boundary conditions at the upper surface of the corona. We find that the terminal speeds of the outflows driven from the inner region of the disk are $\sim 0.01c-0.1c$. The temperatures of the outflows at the large distance from the black hole are still as high as several ten keV. The properties of the magnetic outflows derived in this work are roughly consistent with the fast outflows detected in some luminous quasars and X-ray binaries. The total mass loss rate in the outflows from the corona is about $7\%-12\%$ of the mass accretion rate of the disk. The three dimension field geometry, the velocity, temperature and density of the outflows derived in this work can be used for calculating the emergent spectra and their polarization of the accretion disk/corona/outflow systems. Our results may help understand the features of the observed spectra of X-ray binaries and active galactic nuclei.

astro-ph.HE↗

arXiv2021

Back-n White Neutron Source at CSNS and its Applications

Back-streaming neutrons from the spallation target of the China Spallation Neutron Source (CSNS) that emit through the incoming proton channel were exploited to build a white neutron beam facility (the so-called Back-n white neutron source), which was completed in March 2018. The Back-n neutron beam is very intense, at approximately 2*10^7 n/cm^2/s at 55 m from the target, and has a nominal proton beam with a power of 100 kW in the CSNS-I phase and a kinetic energy of 1.6 GeV and a thick tungsten target in multiple slices with modest moderation from the cooling water through the slices. In addition, the excellent energy spectrum spanning from 0.5 eV to 200 MeV, and a good time resolution related to the time-of-flight measurements make it a typical white neutron source for nuclear data measurements; its overall performance is among that of the best white neutron sources in the world. Equipped with advanced spectrometers, detectors, and application utilities, the Back-n facility can serve wide applications, with a focus on neutron-induced cross-section measurements. This article presents an overview of the neutron beam characteristics, the experimental setups, and the ongoing applications at Back-n.

physics.acc-ph↗