arXiv subjects

Jian-Min Zhang

Publications and source records attributed to Jian-Min Zhang.

14 recordsLinked to original sources

arXiv2025

Spin-Selective Second-Order Topological Insulators Enabling Cornertronics in 2D Altermagnets

Recent progress in spintronics within the paradigm of altermagnets (AMs) opens new avenues for next-generation electronic device design. Here, we establish a spin-corner locking mechanism that generates second-order topological states in two-dimensional (2D) altermagnetic systems, through effective model analysis. Remarkably, the breaking of Mxy symmetry under uniaxial strain creates spin-resolved corner modes, driving the system into a corner-polarized second-order topological insulator (CPSOTI). Beyond critical strain, a topological phase transition to quantum anomalous Hall insulator occurs with quantized conductance. Through first-principles calculations, we identify two experimentally viable candidates for 2D intrinsic AM CrO and Cr$_2$Se$_2$O -- which host robust CPSOTI. Moreover, we construct the topological phase diagram of CrO and predict the existence of an altermagnetic Weyl semimetal phase. Our findings open technological avenues in altermagnetism and higher-order topology, while providing opportunities for coupling topological spintronics with cornertronics.

cond-mat.mes-hall↗

arXiv2025

Sliding Ferroelectrics Induced Hybrid-Order Topological Phase Transitions

We propose ferroelectric layer sliding as a new approach to realize and manipulate topological quantum states in two-dimensional (2D) bilayer magnetic van der Waals materials. We show that stacking monolayer ferromagnetic topological states into layer-spin-locked bilayer antiferromagnetic structures, and introducing sliding ferroelectricity leads to asynchronous topological evolution of different layers (spins) owing to existence of polarization potentials, thereby giving rise to rich layer-resolved topological phases. As a specific example, by means of a lattice model, we show that a bilayer magnetic 2D second order topological insulator (SOTI) reveals an unrecognized spin-hybrid-order topological insulator after undergoing ferroelectric sliding. Interestingly, in such phase, the spin-up (top layer) and spin-down (bottom layer) channels exhibit first-order and second-order topological properties, respectively. Moreover, other topological phases such as SOTI, quantum spin Hall insulator, quantum anomalous Hall insulator, and trivial insulator can also emerge through changes in the parameters of the system, and the relevant topological indices are also discussed. In terms of materials, based on first principles calculations, we predict material ScI2 can serve as an ideal platform to realize our proposal. Further, we predict that the anomalous Nernst effect of these several topological phases exhibits distinct differences, and therefore can be used as a signal for experimentally probing.

cond-mat.mtrl-sci↗

arXiv2025

Topological electron and phonon flat bands in novel kagome superconductor XPd5 (X=Ca, Sr, Ba)

Fermionic and bosonic localized states induced by geometric frustration in the kagome lattice provide a distinctive research platform for investigating emergent exotic quantum phenomena in strongly correlated systems. Here, we report the discovery of coexisting electronic and phononic flat bands induced by geometric frustration in a novel kagome superconductor XPd5 (X=Ca, Sr, Ba). The electronic flat band is located around the Fermi level and possesses a nontrivial topological invariant with Z2=1. Additionaly, we identify multiple van Hove singularities (vHS) arise from the kagome Pd d orbitals with distinct dispersion and sublattice features, including conventional, higher-order vHS and p-type, m-type vHS. Specifically, our investigation of the vibrational modes of the phononic flat band reveals that its formation originates from destructive interference between adjacent kagome lattice sites with antiphase vibrational modes. A spring-mass model of phonons is established to probe the physical mechanism of the phononic flat bands. Furthermore, the calculations of electron-phonon coupling in the XPd5 reveal superconducting ground states with critical temperatures (Tc) of 4.25 K, 2.75 K, and 3.35 K for CaPd5, SrPd5, and BaPd5, respectively. This work provides a promising platform to explore the Fermion-boson many-body interplay and superconducting states, while simultaneously establishing a novel analytical framework to elucidate the origin of phononic flat bands in quantum materials.

cond-mat.supr-con↗

arXiv2024

Hybrid-Order Topological Phase And Transition in 1H Transition Metal Compounds

Inspired by recent experimental observations of hybrid topological states [Hossain et al. Nature 628, 527 (2024)], we predict hybrid-order topological insulators in 1H transition metal compounds (TMCs), where both second-order and first-order topological (FOT) states coexist near the Fermi level. Initially, 1H-TMCs exhibit a second-order topological phase due to the d orbital bandgap. Upon coupling of p and d orbitals through the crystal field effect, first-order topological characteristics emerge. This hybrid-order topological phase transition can be tuned via crystal field effects. Combined with first-principles calculations, we illustrate the phase transition with WTe2 and NbSe2. The WTe2 exhibits hybrid-order under ambient conditions, while NbSe2 transitions to hybrid-order under pressure. Additionally, the first-order topological bandgap in the HyOTI demonstrates a strong spin Hall effect. Our findings reveal a hybrid-order topological phase in two-dimensional electron materials and underscore spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Novel magnetic topological insulator FeBi$_2$Te$_4$ with controllable topological quantum phase

Here, we report a new intrinsic magnetic topological insulator FeBi$_2$Te$_4$ based on first-principles calculations and it can achieve a rich topological phase under pressure modulation. Without pressure, we predict that both FeBi$_2$Te$_4$ ferromagnetic and antiferromagnetic orders are non-trivial topological insulators. Furthermore, FeBi$_2$Te$_4$ of FM-z order will undergo a series of phase transitions from topological insulator to semimetals and then to trivial insulator under pressure. Finally, we further clarify and verify topological phase transitions with low-energy effective model calculations. This topological phase transition process is attributed to the synergy of the magnetic moment and the spin-orbit coupling. The unique topological properties of FeBi$_2$Te$_4$ will be of great interest in driving the development of quantum effects.

cond-mat.mes-hall↗

arXiv2024

Thermal and mechanical properties and the structural phase transition under pressure in $A$In$_2$As$_2$ ($A$ = Ca, Sr, Ba)

Experimental results that BaIn2As2 and Ca(Sr)In2As2, which are the same class of alkali metal compounds, belong to different structural phases have puzzled the current materials physics community. Here, we investigate the pressure-induced structural phase transition of AIn2As2 and its accompanying improvement in mechanical and thermal properties. Firstly, the structural stability of the materials and their structural phase transitions under pressure are characterized by enthalpy and double checking by phonon dispersion spectrum. We also confirm the structural phase transitions of the hexagonal and monoclinic phases from a group-theoretic point of view, associating their symmetry operations using transformation matrices. In terms of mechanical properties, we propose an effective scheme for pressure modulation of the anisotropy of AIn2As2 materials and to induce the transformation of AIn2As2 from isotropic to anisotropic (hexagonal) and from brittle to ductile (hexagonal and monoclinic). Meanwhile, we find the negative Poisson's ratio phenomenon under compression and tension, which is favorable for a wide range of applications of this series of materials in aerospace, medicine, sensors, etc. In terms of thermal properties, applying pressure will enhance the structural phase transition temperature of AIn2As2 materials to near room temperature. We further give direct evidence of phonon softening based on group velocity calculations and reveal that phonon softening prevents the heat capacity from reaching the Dulong-Petit limit. Our study provides a theoretical basis for selecting stable structural phases and pioneering thermodynamic property studies of the thermoelectric topological candidate material AIn2As2.

cond-mat.mtrl-sci↗

arXiv2024

High-Order Topological Phase Diagram Revealed by Anomalous Nernst Effect in Janus ScClI Monolayer

Higher-order topological properties of two-dimensional(2D) magnetic materials have recently been proposed. In 2D ferromagnetic Janus materials, we find that ScClI is a second-order topological insulator (SOTI). By means of a multi-orbital tight-binding model, we analyze the orbital contributions of higher-order topologies. Further, we give the complete high-order topological phase diagram of ScClI, based on the external field modulation of the magneto-valley coupling and energy levels. 2D ScClI has a pronounced valley polarization, which causes different insulating phases to exhibit completely different anomalous Nernst conductance. As a result, we use the matched anomalous Nernst effect to reveal the topological phase transition process of ScClI. We utilize the characteristics of valley electronics to link higher-order topological materials with the anomalous Nernst effect, which has potential implications for high-order topological insulators and valley electronics.

cond-mat.mes-hall↗

arXiv2023

Topological Phases, Local Magnetic Moments, and Spin Polarization Triggered by C558-Line Defects in Graphene

We study the electronic properties of a novel topological defect structure for graphene interspersed with C558-line defects along the Armchair boundary. This system has the topological property of being topologically three-periodic and the type-II Dirac-fermionic character of the embedded topological phase. At the same time, we show computationally that the topological properties of the system are overly dependent on the coupling of this line defect. Using strain engineering to regulate the magnitude of hopping at the defect, the position of the energy level can be easily changed to achieve a topological phase transition. We also discuss the local magnetic moment and the ferromagnetic ground state in the context of line defects, which is the conclusion after considering additional Coulomb interactions. This leads to spin polarization of the whole system. Finally, by modulating the local magnetic moment at the position of the line defect, we achieve a tunable spin quantum conductance in a one-dimensional nanoribbon. Near the Fermi energy level, it also has the property of complete spin polarization. Consequently, spin filtering can be achieved by varying the incident energy of the electrons.

cond-mat.mes-hall↗

arXiv2021

Topological quantum phase transition in the magnetic semimetal HoSb

Magnetic topological semimetals, a novel state of quantum matter with nontrivial band topology, have emerged as a new frontier in physics and materials science. An external stimulus like temperature or magnetic field could be expected to alter their spin states and thus the Fermi surface anisotropies and topological features. Here, we perform the angular magnetoresistance measurements and electronic band structure calculations to reveal the evolution of HoSb's Fermi surface anisotropies and topological nature in different magnetic states. The angular magnetoresistance results manifest that its Fermi surface anisotropy is robust in the paramagnetic state but is significantly modulated in the antiferromagnetic and ferromagnetic states. More interestingly, a transition from the trivial (nontrivial) to nontrivial (trivial) topological electronic phase is observed when HoSb undergoes a magnetic transition from the paramagnetic (antiferromagnetic) to antiferromagnetic (ferromagnetic) state induced by temperature (applied magnetic field). Our studying suggests that HoSb provides an archetype platform to study the correlations between magnetism and topological states of matter.

cond-mat.mtrl-sci↗

arXiv2021

Weyl Nodal Line-Surface Half-metal in CaFeO$_3$

Manipulating the spin degrees of freedom of electrons affords an excellent platform for exploring novel quantum states in condensed-matter physics and material science. Based on first-principles calculations and analysis of crystal symmetries, we propose a fully spin-polarized composite semimetal state, which is combined with the one-dimensional nodal lines and two-dimensional nodal surfaces, in the half-metal material CaFeO$_3$. In the nodal line-surface states, the Baguenaudier-like nodal lines feature six rings linked together, which are protected by the three independent symmetry operations:$\mathcal{PT}$, $\mathcal{M}_{y}$, and $\mathcal{\widetilde{M}}_{z}$. Near the Fermi level, the spin-polarized nodal surface states are guaranteed by the joint operation $\mathcal{T}\mathcal{S}_{2i}$ in the $k_{i(i=x,y,z)}=π$ plane. Furthermore, high-quality CaFeO$_3$ harbors ultra-clean energy dispersion, which is rather robust against strong triaxial compressional strain and correlation effect. The realization of the Weyl nodal line-surface half-metal presents great potential for spintronics applications with high speed and low power consumption.

cond-mat.mtrl-sci↗

arXiv2019

Adsorption and ultrafast diffusion of lithium in bilayer graphene ab initio and kinetic Monte Carlo simulation study

In this work, we adopt first-principle calculations based on density functional theory and Kinetic Monte Carlo simulations to investigate the adsorption and diffusion of lithium in bilayer graphene (BLG) as anodes in lithium-ion batteries. Based on energy barriers directly obtained from first-principle calculations for single-Li and two-Li intercalated BLG, a new equation was deduced for predicting energy barriers considering Li's interactions for multi-Li intercalated BLG. Our calculated results indicate that Li energetically prefers to intercalate within rather than adsorb outside the bilayer graphene. Additionally, lithium exists in cationic state in the bilayer graphene. More excitingly, ultrafast Li diffusion coefficient, within AB-stacked BLG near room temperature was obtained, which reproduces the ultrafast Li diffusion coefficient measured in recent experiment. However, ultrafast Li diffusion was not found within AA-stacked BLG near room temperature. The analyses of potential distribution indicate that the stacking structure of BLG greatly affects its height of potential well within BLG, which directly leads to the large difference in Li diffusion. Furthermore, it is found that both the interaction among Li ions and the stacking, structure cause Li diffusion within AB-stacked BLG to exhibit directional preference. Finally, the temperature dependence of Li diffusion is described by the Arrhenius law. These findings suggest that the stacking structure of BLG has an important influence on Li diffusion within BLG, and changing the stacking structure of BLG is one possible way to greatly improve Li diffusion rate within BLG. At last, it is suggested that AB-stacked BLG can be an excellent candidate for anode material in Lithium-ion batteries.

cond-mat.mes-hall↗

arXiv2018

The Doping effect of Chalcogen on the Two-Dimensional Ferromagnetic Material Chromium Tribromide

Recently the discovery of magnetic order in two-dimensional monolayer chromium trihalides opens the new research field in two-dimensional materials. We use first-principles calculations to systematically examine the doping effect of chalcogen on CrBr3. In the case of S-doping, four stable configurations, Cr2Br5S, Cr2Br4S2-A, Cr2Br4S2-B and Cr2Br3S3-A, are predicted to be ferromagnetic semiconductors. It is found that the new bands appearing in the original bandgap are made up of S-p and Cr-d-egorbits, lead to the obvious reduce of bandgap and the enhanced optical absorption in the visible range. Due to the decrease of valence electron after chalcogen doping, the magnetic moment also decreases with the increase of S atoms, and the character of ferromagnetic semiconductor is always hold in a wide range of strain. The results shown that monolayer CrBr3with chalcogen doping supply a effectual way to control the magnetism and extend the optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2013

Stability, Electronic and Magnetic properties of magnetically doped topological insulators Bi2Se3, Bi2Te3 and Sb2Te3

Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using first-principles calculations, the magnetic doping properties (V, Cr, Mn and Fe) in three strong TIs (Bi$_{2}$Se$_{3}$, Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$) are investigated. We find that for all three TIs the cation-site substitutional doping is most energetically favorable with anion-rich environment as the optimal growth condition. Further our results show that under the nominal doping concentration of 4%, Cr and Fe doped Bi$_{2}$Se$_{3}$, Bi$_{2}$Te$_{3}$, and Cr doped Sb$_{2}$Te$_{3}$ remain as insulator, while all TIs doped with V, Mn and Fe doped Sb$_{2}$Te$_{3}$ become metal. We also show that the magnetic interaction of Cr doped Bi$_{2}$Se$_{3}$ tends to be ferromagnetic, while Fe doped Bi$_{2}$Se$_{3}$ is likely to be antiferromagnetic. Finally, we estimate the magnetic coupling and the Curie temperature for the promising ferromagnetic insulator (Cr doped Bi$_{2}$Se$_{3}$) by Monte Carlo simulation. These findings may provide important guidance for the magnetism incorporation in TIs experimentally.

cond-mat.mtrl-sci↗

arXiv2013

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic properties of doped Bi2Se3 are studied using first-principles calculations within density functional theory. Our results show that Bi substitutional sites are energetically more favorable than interstitial sites for single impurities. Detailed electronic structure analysis reveals that Cr and Fe doped materials are still insulating in the bulk but the intrinsic band gap of Bi2Se3 is substantially reduced due to the strong hybridization between the d states of the dopants and the p states of the neighboring Se atoms. The calculated magnetic coupling suggests that Cr doped Bi2Se3 is possible to be both ferromagnetic and insulating, while Fe doped Bi2Se3 tends to be weakly antiferromagnetic.

cond-mat.mtrl-sci↗