arXiv subjects

Jian-Shun Tang

Publications and source records attributed to Jian-Shun Tang.

At least 19 recordsLinked to original sources

arXiv2026

An on-chip programmable mechano-quantum transducer

Solid-state spin defects encode local perturbations as measurable shifts in spin-transition frequencies, but mechanical actuation and quantum readout remain physically separated, resulting in a discrete measurement setup. Integrating these functions requires an on-site mechano-quantum interface that programs the lattice state of a defect host and quantitatively maps it onto the spin Hamiltonian. Here we first report an on-chip programmable mechano-quantum transducer (OCPMQT) that integrates voltage-defined micromechanical actuation with in situ spin-frequency readout in a two-dimensional van der Waals quantum-defect host. Mechanically programmed lattice states are encoded as shifts in the axial zero-field splitting parameter and resolved by optically detected magnetic resonance (ODMR) spectroscopy. Within a chip volume of 2.05*10^-2 cm^3, the transducer accesses ODMR-inferred strains as low as 0.0080% and delivers a volumetric force density of approximately 2.6*10^4 N*m^-3. A micromechanical-to-spin-Hamiltonian framework links on-chip electromechanics, interfacial strain transfer, and strain-spin coupling, enabling the electrical control micromechanical input to be measured directly as spin-frequency response.

cond-mat.mes-hall↗

arXiv2025

Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique

Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage. Besides, their emissions appear in telecommunication bands, which makes them play a crucial role in the construction of quantum network. To address the challenge of weak spontaneous emission, different optical cavities are fabricated to enhance the emission rate. However, the relative location between cavity and emitter is random, which greatly reduce the success probability of enhancement. Here, we report on a fluorescence-localization technique (FLT) for precisely locating single G center in silicon and embedding it in the center of a circular Bragg grating cavity in situ, achieving 240-times improvement of the success probability. We observe a 30-fold enhancement in luminescence intensity, 2.5-fold acceleration of the emission from single G center, corresponding to a Purcell factor exceeding 11. Our findings pave the way for the large-scale integration of quantum light sources including those with spins.

physics.optics↗

arXiv2025

Position-correlated biphoton wavefront sensing for quantum adaptive imaging

Quantum imaging with spatially entangled photons offers advantages such as enhanced spatial resolution, robustness against noise, and counter-intuitive phenomena, while a biphoton spatial aberration generally degrades its performance. Biphoton aberration correction has been achieved by using classical beams to detect the aberration source or scanning the correction phase on biphotons if the source is unreachable. Here, a new method named position-correlated biphoton Shack-Hartmann wavefront sensing is introduced, where the phase pattern added on photon pairs with a strong position correlation is reconstructed from their position centroid distribution at the back focal plane of a microlens array. Experimentally, biphoton phase measurement and adaptive imaging against the disturbance of a plastic film are demonstrated. This single-shot method is a more direct and efficient approach toward quantum adaptive optics, suitable for integration into quantum microscopy, remote imaging, and communication.

quant-ph↗

arXiv2025

A hybrid-frequency on-chip programmable synthetic-dimension simulator with arbitrary couplings

High-performance photonic chips provide a powerful platform for analog computing, enabling the simulation of high-dimensional physical systems using low-dimensional devices with additional synthetic dimensions. The realization of large-scale complex simulations necessitates an architecture capable of arbitrary coupling configurations (encompassing symmetric, asymmetric and long-range coupling schemes) which is also crucial for scaling up. Previous approaches rely on excessive physical components to introduce asymmetric coupling, however, are restricted in reconfiguring and scaling by the relatively complicated structures. Here, to solve this problem, we propose a hybrid-frequency synthetic-dimension simulator architecture that combines both intra-resonant and inter-resonant frequency-lattice sites, and experimentally demonstrate it using the thin-film lithium niobate (TFLN) photonic chip. Employing this hybrid programmable architecture, we are able to simulate both the regular and long-range coupled forms of diverse compound-lattice models, such as the Hall ladder, Creutz ladder (symmetric) and Su-Schrieffer-Heeger (SSH, asymmetric) model, on a single chip, simultaneously reducing the experimental requirements significantly. As results, the direct readout of the bandstructure of the SSH model is able to be achieved, to be distinguished from all previous works, and important phenomena such as spin-momentum locking, topological flat band and Aharonov-Bohm cage effect are also observed with lower experimental requirements. Furthermore, applications like piecewise-continuous optical frequency shifting can be enabled by cascading our devices. Our results offer promising insights for future large-scale complex on-chip simulators with arbitrary couplings.

physics.optics↗

arXiv2025

Versatile photonic frequency synthetic dimensions using a single Mach-Zehnder-interferometer-assisted device on thin-film lithium niobate

Investigating physical models with photonic synthetic dimensions has been generating great interest in vast fields of science. The rapid developing thin-film lithium niobate (TFLN) platform, for its numerous advantages including high electro-optic coefficient and scalability, is well compatible with the realization of synthetic dimensions in the frequency together with spatial domain. While coupling resonators with fixed beam splitters is a common experimental approach, it often lacks tunability and limits coupling between adjacent lattices to sites occupying the same frequency domain positions. Here, on the contrary, we conceive the resonator arrays connected by electro-optic tunable Mach-Zehnder interferometers in our configuration instead of fixed beam splitters. By applying bias voltage and RF modulation on the interferometers, our design extends such coupling to long-range scenario and allows for continuous tuning on each coupling strength and synthetic effective magnetic flux. Therefore, our design enriches controllable coupling types that are essential for building programmable lattice networks and significantly increases versatility. As the example, we experimentally fabricate a two-resonator prototype on the TFLN platform, and on this single chip we realize well-known models including tight-binding lattices, topological Hall ladder and Creutz ladder. We directly observe the band structures in the quasi-momentum space and important phenomena such as spin-momentum locking and the Aharonov-Bohm cage effect. These results demonstrate the potential for convenient simulations of more complex models in our configuration.

physics.optics↗

arXiv2025

Temperature dependent single- and double-quantum relaxation of negatively charged boron vacancies in hexagonal boron nitride

The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited spin-phonon interactions, while the underlying physical mechanism of the corresponding high-temperature behavior is still not fully understood. Here, we probe the single- and double-quantum relaxation rates on this center over the temperature range from 293 to 393 K. The results show that both relaxation rates increase with increasing temperature, and the double-quantum relaxation rate significantly increases rapidly. At high temperature (above 400 K), the double-quantum relaxation rate is much greater than single-quantum relaxation rate, and may dominate the decoherence channel of spin-phonon interactions. Using a theoretical model of second-order spin-phonon interactions, we attribute the high-temperature spin relaxation rates to interactions with higher-energy effective phonon mode, aiding the further understanding and guiding high-temperature sensing applications.

quant-ph↗

arXiv2025

Magnetic measurements under high pressure with a quantum sensor in Hexagonal Boron Nitride

Magnetic measurements under high-pressure conditions are pivotal for the study of superconductivity and magnetic materials but remain challenging due to the micrometer-sized sample in diamond anvil cells (DAC). In this study, we propose a quantum sensing approach utilizing negatively charged boron-vacancy (V$_B^-$) spin defects in two-dimensional hexagonal boron nitride for high resolution magnetic measurements under pressure. The optical and spin properties of VB$^-$ defects were systematically studied under high-pressure conditions, revealing a significant pressure-induced shift in zero-field splitting (ZFS), approximately three times larger than that of nitrogen-vacancy (NV) center. Furthermore, we demonstrate the pressure-dependent magnetic transition and variations in the Curie temperature of van der Waals ferromagnet Fe$_3$GeTe$_2$ flake using V$_B^-$ defects under pressures. Notably, the maximum operational pressure for V$_B^-$ defects was determined to be approximately 11 GPa, attributed to a structural phase transition in hexagonal boron nitride (hBN). This work establishes the way for two-dimensional quantum sensing technologies under high-pressure environments.

cond-mat.mes-hall↗

arXiv2024

Experimental investigation of direct non-Hermitian measurement and uncertainty relation towards high-dimensional quantum domain

Non-Hermitian dynamics in quantum systems have unveiled novel phenomena, yet the implementation of valid non-Hermitian quantum measurement remains a challenge, because a universal quantum projective mechanism on the complete but skewed non-Hermitian eigenstates is not explicit in experiment. This limitation hinders the direct acquisition of non-Hermitian observable statistics (e.g., non-Hermitian population dynamics), also constrains investigations of non-Hermitian quantum measurement properties such as uncertainty relation. Here, we address these challenges by presenting a non-Hermitian projective protocol and investigating the non-Hermitian uncertainty relation. We derive the uncertainty relation for pseudo-Hermitian (PH) observables that is generalized beyond the Hermitian ones. We then investigate the projective properties of general quantum states onto complete non-Hermitian eigenvectors, and present a quantum simulating method to apply the valid non-Hermitian projective measurement on a direct-sum dilated space. Subsequently, we experimentally construct a quantum simulator in the quantum optical circuit and realize the 3-dimensional non-Hermitian quantum measurement on the single-photon qutrit. Employing this platform, we explore the uncertainty relation experimentally with different PH metrics. Our non-Hermitian quantum measurement method is state-independent and outputs directly the non-Hermitian quantum projective statistics, paving the way for studies of extensive non-Hermitian observable in quantum domain.

quant-ph↗

arXiv2024

Experimental test of generalized multipartite entropic uncertainty relations

Entropic uncertainty relation (EUR) formulates the restriction of the inherent uncertainty of quantum mechanics from the information-theoretic perspective. A tighter lower bound for uncertainty relations can provide information-theoretic security to quantum communication protocols. Recently, a generalized EUR (GEUR) for the measurement of multiple observables in arbitrary many-body systems has been formulated. Here, we experimentally test this GEUR using a four-photon entangled state with a controllable decoherence channel and show that for the tripartite scenario, the GEUR improves the entropic bound from Renes--Boileau's famous results. As an application, we further demonstrate an improvement of the secure key rate in quantum key distribution from the GEUR. Our results extend the test of EURs into multipartite regimes and may find applications in practical quantum cryptography tasks.

quant-ph↗

arXiv2024

A universal programmable Gaussian Boson Sampler for drug discovery

Gaussian Boson Sampling (GBS) exhibits a unique ability to solve graph problems, such as finding cliques in complex graphs. It is noteworthy that many drug discovery tasks can be viewed as the clique-finding process, making them potentially suitable for quantum computation. However, to perform these tasks in their quantum-enhanced form, a large-scale quantum hardware with universal programmability is essential, which is yet to be achieved even with the most advanced GBS devices. Here, we construct a time-bin encoded GBS photonic quantum processor that is universal, programmable, and software-scalable. Our processor features freely adjustable squeezing parameters and can implement arbitrary unitary operations with a programmable interferometer. Using our processor, we have demonstrated the clique-finding task in a 32-node graph, where we found the maximum weighted clique with approximately twice the probability of success compared to classical sampling. Furthermore, a multifunctional quantum pharmaceutical platform is developed. This GBS processor is successfully used to execute two different drug discovery methods, namely molecular docking and RNA folding prediction. Our work achieves the state-of-the-art in GBS circuitry with its distinctive universal and programmable architecture which advances GBS towards real-world applications.

quant-ph↗

arXiv2024

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift ($\sim$ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies.

quant-ph↗

arXiv2023

Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature

Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.

physics.optics↗

arXiv2023

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin defect-based quantum applications in mature SiC materials.

physics.optics↗

arXiv2023

Realization of algorithmic identification of cause and effect in quantum correlations

Causal inference revealing causal dependencies between variables from empirical data has found applications in multiple sub-fields of scientific research. A quantum perspective of correlations holds the promise of overcoming the limitation by Reichenbach's principle and enabling causal inference with only the observational data. However, it is still not clear how quantum causal inference can provide operational advantages in general cases. Here, we have devised a photonic setup and experimentally realized an algorithm capable of identifying any two-qubit statistical correlations generated by the two basic causal structures under an observational scenario, thus revealing a universal quantum advantage in causal inference over its classical counterpart. We further demonstrate the explainability and stability of our causal discovery method which is widely sought in data processing algorithms. Employing a fully observational approach, our result paves the way for studying quantum causality in general settings.

quant-ph↗

arXiv2023

Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies

Optically addressable spins in two-dimensional hexagonal boron nitride (hBN) attract widespread attention for their potential advantage in on-chip quantum devices, such as quantum sensors and quantum network. A variety of spin defects have been found in hBN, but no convenient and deterministic generation methods have been reported for other defects except negatively charged boron vacancy ($V_B^-$). Here we report that by using femtosecond laser direct writing technology, we can deterministically create spin defect ensembles with spectra range from 550 nm to 800 nm on nanoscale hBN flakes. Positive single-peak optically detected magnetic resonance (ODMR) signals are detected in the presence of magnetic field perpendicular to the substrate, and the contrast can reach 0.8%. With the appropriate thickness of hBN flakes, substrate and femtosecond laser pulse energy, we can deterministically and efficiently generate bright spin defect array. Our results provide a convenient deterministic method to create spin defects in hBN, which will motivate more endeavors for future researches and applications of spin-based technologies such as quantum magnetometer array.

physics.optics↗

arXiv2022

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its %use in practical applications. Here, we demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for $\rm V_B^-$ defects. %Improved photoluminescence (PL) intensity and optically detected magnetic resonance (ODMR) contrast of $\rm V_B^-$ defect arrays. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between the reflective dielectric cavity and the hBN spin defect. Using a reflective dielectric cavity, we achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18\%. Additionally, the oxide layer of the reflective dielectric cavity can be used as an integrated material for micro-nano photonic devices for secondary processing, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.

quant-ph↗

arXiv2021

An ultrastable and robust single-photon emitter in hexagonal boron nitride

Quantum emitters in van der Waals (vdW) materials have attracted lots of attentions in recent years, and shown great potentials to be fabricated as quantum photonic nanodevices. Especially, the single photon emitter (SPE) in hexagonal boron nitride (hBN) emerges with the outstanding room-temperature quantum performances, whereas the ubiquitous blinking and bleaching restrict its practical applications and investigations critically. The blister in vdW materials possessing stable structure can modify the local bandgap by strains on nanoscale, which is supposed to have the ability to fix this photostability problem. Here we report a blister-induced high-purity SPE in hBN under ambient conditions showing stable quantum-emitting performances, and no evidence of blinking and bleaching for one year. Remarkably, we observe the nontrivial successive activating and quenching dynamical process of the fluorescent defects at the SPE region under low pressures for the first time, and the robust recoverability of the SPE after turning back to the atmospheric pressure. The pressure-tuned performance indicates the SPE origins from the lattice defect isolated and activated by the strain induced from the blister, and sheds lights on the future high-performance quantum sources based on hBN.

physics.optics↗

arXiv2021

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2%, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast (-30%) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy (NV) centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

cond-mat.mes-hall↗