arXiv subjects

Jiandong Ye

Publications and source records attributed to Jiandong Ye.

5 recordsLinked to original sources

arXiv2025

RadarRGBD A Multi-Sensor Fusion Dataset for Perception with RGB-D and mmWave Radar

Multi-sensor fusion has significant potential in perception tasks for both indoor and outdoor environments. Especially under challenging conditions such as adverse weather and low-light environments, the combined use of millimeter-wave radar and RGB-D sensors has shown distinct advantages. However, existing multi-sensor datasets in the fields of autonomous driving and robotics often lack high-quality millimeter-wave radar data. To address this gap, we present a new multi-sensor dataset:RadarRGBD. This dataset includes RGB-D data, millimeter-wave radar point clouds, and raw radar matrices, covering various indoor and outdoor scenes, as well as low-light environments. Compared to existing datasets, RadarRGBD employs higher-resolution millimeter-wave radar and provides raw data, offering a new research foundation for the fusion of millimeter-wave radar and visual sensors. Furthermore, to tackle the noise and gaps in depth maps captured by Kinect V2 due to occlusions and mismatches, we fine-tune an open-source relative depth estimation framework, incorporating the absolute depth information from the dataset for depth supervision. We also introduce pseudo-relative depth scale information to further optimize the global depth scale estimation. Experimental results demonstrate that the proposed method effectively fills in missing regions in sensor data. Our dataset and related documentation will be publicly available at: https://github.com/song4399/RadarRGBD.

eess.IV↗

arXiv2025

Tailoring light holes in $β$-$Ga_{2}O_{3}$ via Anion-Anion Antibonding Coupling

A significant limitation of wide-bandgap materials is their low hole mobility related to localized holes with heavy effective masses ($m_h^*$). We identify in low-symmetric wide-bandgap compounds an anion-anion antibonding coupling (AAAC) effect as the intrinsic factor behind hole localization, which explains the extremely heavy $m_h^*$ and self-trapped hole (STH) formation observed in gallium oxide ($β$-$Ga_{2}O_{3}$). We propose a design principle for achieving light holes by manipulating AAAC, demonstrating that specific strain conditions can reduce $m_h^*$ in $β$-$Ga_{2}O_{3}$ from 4.77 $m_0$ to 0.38 $m_0$, making it comparable to the electron mass (0.28 $m_0$), while also slightly suppresses the formation of self-trapped holes, evidenced by the reduction in the formation energy of hole polarons from -0.57 eV to -0.45 eV under tensile strain. The light holes show significant anisotropy, potentially enabling two-dimensional transport in bulk material. This study provides a fundamental understanding of hole mass enhancement and STH formation in novel wide-bandgap materials and suggest new pathways for engineering hole mobilities.

cond-mat.mtrl-sci↗

arXiv2022

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure

In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 μm. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 mΩ.cm^2, the power figure of merit of the SBD can reach 4.0 GW/cm^2, demonstrating a great potential for the application in ultra-high-voltage electronics.

cond-mat.mtrl-sci↗

arXiv2021

High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing

GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here we demonstrate UHV AlGaN/GaN SBDs on sapphire with a BV of 10.6 kV, a specific on-resistance of 25.8 mΩ.cm2, yielding a power figure of merit of more than 3.8 GW/cm2. These devices are designed with single channel and 85-μm anode-to-cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics.

cond-mat.mtrl-sci↗

arXiv2021

All-Fibre Label-Free Nano-Sensor for Real-Time in situ Early Monitoring of Cellular Apoptosis

The achievement of all-fibre functional nano-modules for subcellular label-free measurement has long been pursued due to the limitations of manufacturing techniques. In this paper, a compact all-fibre label-free nano-sensor composed of a fibre taper and zinc oxide nano-gratings is designed and applied for the early monitoring of apoptosis in single living cells. Because of its nanoscale dimensions, mechanical flexibility and minimal cytotoxicity to cells, the sensing module can be loaded in cells for long-term in situ tracking with high sensitivity. A gradual increase in the nuclear refractive index during the apoptosis process is observed, revealing the increase in molecular density and the decrease in cell volume. The strategy used in this study not only contributes to the understanding of internal environmental variations during cellular apoptosis but also provides a new platform for non-fluorescent all-fibre devices to investigate cellular events and to promote new progress in fundamental cell biochemical engineering.

physics.optics↗