arXiv subjects

Jiang Wei

Publications and source records attributed to Jiang Wei.

At least 19 recordsLinked to original sources

arXiv2025

Unusual Electron-Phonon Interactions in Highly Anisotropic Two-Dimensional $Ta_2$$Ni_3$$Te_5$

Electron-phonon interactions (EPIs) represent a fundamental cornerstone of condensed matter physics, commanding persistent attention due to their pivotal role in driving novel quantum phenomena within low-dimensional materials. Here, we unveil unusual anisotropic electron-phonon coupling behaviors in quasi-one-dimensional $Ta_2$$Ni_3$$Te_5$ nano-flakes through a powerful combination of angle-resolved polarized Raman spectroscopy and density functional perturbation theory (DFPT). High-resolution transmission electron microscopy and scanning tunneling microscopy directly visualize the pronounced quasi-one-dimensional atomic chains within the crystal structure, establishing a structural foundation for the observed anisotropic interactions. Our Raman investigations reveal remarkable polarization-dependent responses in $A_g$ phonon modes that deviate significantly from conventional behavior, which our theoretical analyses attribute to complex anisotropic electron-photon and electron-phonon interactions. Temperature-dependent Raman measurements further uncover an intriguing phonon decay mechanism involving both three- and four-phonon processes, with the latter showing significant contributions in some modes - a possible manifestation of strong anisotropic electron-phonon interactions. Beyond revealing $Ta_2$$Ni_3$$Te_5$ as an exceptional platform for exploring anisotropic EPIs, this work demonstrates that integrating angle-resolved polarized Raman spectroscopy with DFPT calculations offers a powerful methodology for investigating electron-phonon interactions in emerging low-dimensional quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Diverse edge states of nanoribbons and excitonic insulator states of the monolayer Ta2Ni3Te5

Ta2Ni3Te5, a layered transition metal chalcogenide with quasi-one-dimensional electronic states, exhibits rich topological and correlated phenomena. Using first-principles calculations, we explore Ta2Ni3Te5 nanoribbons, demonstrating tunable electronic and magnetic properties-ranging from metallic to semimetallic and semiconducting (band gaps of 29.7-60.8 meV), and from ferromagnetic to antiferromagnetic-controlled by edge (Ni or Ta), ribbon width, and H/F saturation. Additionally, GW and Bethe-Salpeter equation (BSE) calculations, complemented by metaGGA-based modified BSE, reveal that the Ta2Ni3Te5 monolayer is an excitonic insulator, with an exciton binding energy exceeding its band gap. These diverse properties position Ta2Ni3Te5 nanoribbons and monolayers as promising candidates for nanoelectronics, spintronics, and optoelectronics, motivating further experimental exploration.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric

Strain modulation is a crucial way in engineering nanoscale materials. It is even more important for single photon emitters in layered materials, where strain can create quantum emitters and control their energies. Here we report the localized, charge-enhanced coupling between the charged localized emitters in monolayer tungsten diselenide (WSe2) to the piezoelectric relaxor ferroelectric substrate. In addition to the strain effect, we observe a gigantic polarizability volume with the enhancement factor up to 1010. The enormous polarizability leads to a large Quantum-confined Stark shift under a small variation of electric field, indicating the potential of integrating layered materials with functional substrates for quantum sensing. We further demonstrate the tunable diamagnetic shift and g-factor with strain varying by ~0.05%, which confirms the existence of enhanced interaction between the localized oscillating dipoles and the ferroelectric domains. Our results signify the prospect of charged quantum emitters in layered materials for quantum sciences and technology.

cond-mat.mes-hall↗

arXiv2024

Convergence analysis of three semi-discrete numerical schemes for nonlocal geometric flows including perimeter terms

We present and analyze three distinct semi-discrete schemes for solving nonlocal geometric flows incorporating perimeter terms. These schemes are based on the finite difference method, the finite element method, and the finite element method with a specific tangential motion. We offer rigorous proofs of quadratic convergence under $H^1$-norm for the first scheme and linear convergence under $H^1$-norm for the latter two schemes. All error estimates rely on the observation that the error of the nonlocal term can be controlled by the error of the local term. Furthermore, we explore the relationship between the convergence under $L^\infty$-norm and manifold distance. Extensive numerical experiments are conducted to verify the convergence analysis, and demonstrate the accuracy of our schemes under various norms for different types of nonlocal flows.

math.NA↗

arXiv2024

Role of magnetic fields on the outer crust in a magnetar

We explore the properties of 4110 nuclides from Z = 5 to Z = 82 with the Sky3D code and the composition of the outer crust in the magnetars under extreme magnetic fields. The effects of the variation of the nuclear masses due to the magnetic fields on the outer crust are comprehensively studied. The neutron-drip transition pressure, the equation of state and neutron fraction in the outer crust have also been discussed.

nucl-th↗

arXiv2020

Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals

In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies, produces an unusual floating surface band with trivial topology. Here, we report quantum transport probing to ZrSiSe thin flakes and reveal transport signatures of this new surface state. Remarkably, though topologically trivial, such a surface band exhibit substantial two dimensional Shubnikov de Haas quantum oscillations with high mobility, which signifies a new protection mechanism and may open applications for surface-related devices.

cond-mat.mtrl-sci↗

arXiv2019

High yield production of ultrathin fibroid semiconducting nanowire of Ta$_2$Pd$_3$Se$_8$

Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta2Pd3Se8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.

physics.app-ph↗

arXiv2018

Unusually strong lateral interaction in the CO overlayer in phosphorene-based systems

By means of vibrational spectroscopy and density functional theory (DFT), we investigate CO adsorption on phosphorene-based systems. We find stable CO adsorption at room temperature on both phosphorene and bulk black phosphorus. The adsorption energy and vibrational spectrum have been calculated for several possible configurations of the CO overlayer. We find that the vibrational spectrum is characterized by two different C-O stretching energies. The experimental data are in good agreement with the prediction of the DFT model and unveil the unusual C-O vibrational band at 165-180 meV, activated by the lateral interactions in the CO overlayer.

cond-mat.mtrl-sci↗

arXiv2017

Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

WTe2 has attracted a great deal of attention because it exhibits extremely large and nonsaturating magnetoresistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concentration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range, and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identified a flat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a flat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.

cond-mat.mtrl-sci↗

arXiv2017

Nearly massless Dirac fermions and strong Zeeman splitting in the nodal-line semimetal ZrSiS probed by de Haas--van Alphen quantum oscillations

Topological semimetals represent a new class of quantum materials hosting Dirac/Weyl fermions. The essential properties of topological fermions can be revealed by quantum oscillations. Here we present the first systematic de Haas-van Alphen (dHvA) oscillation studies on the recently discovered topological Dirac nodal-line semimetal ZrSiS. From the angular dependence of dHvA oscillations, we have revealed the anisotropic Dirac bands in ZrSiS and found surprisingly strong Zeeman splitting at low magnetic fields. The Landé g-factor estimated from the separation of Zeeman splitting peaks is as large as 38. From the analyses of dHvA oscillations, we also revealed nearly zero effective mass and exceptionally high quantum mobility for Dirac fermions in ZrSiS. These results shed light on the nature of novel Dirac fermion physics of ZrSiS.

cond-mat.mtrl-sci↗

arXiv2016

Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions

Since the discovery of large, non-saturating magnetoresistance in bulk WTe2 which allows microexfoliation, single- and few-layer WTe2 crystals have attracted increasing interests. However, as it mentioned in existing studies, WTe2 flakes appear to degrade in ambient conditions. Here we report experimental observations of saturating degradation in few-layer WTe2 through Raman spectroscopy characterization and careful monitoring of the degradation of single-, bi- and tri-layer (1L, 2L & 3L) WTe2 over long time. Raman peak intensity decreases during WTe2 degradation and 1L flakes degrade faster than 2L and 3L flakes. The relatively faster degradation in 1L WTe2 could be attributed to low energy barrier of oxygen reaction with WTe2. We further investigate the degradation mechanisms of WTe2 using XPS and AES and find that oxidation of Te and W atoms is the main reason of WTe2 degradation. In addition, we observe oxidation occurs only in the depth of 0.5nm near the surface, and the oxidized WTe2 surface could help prevent inner layers from further degradation.

cond-mat.mes-hall↗

arXiv2016

Nano-scale Inhomogeneous Superconductivity in Fe(Te1-xSex) Probed by Nanostructure-transport

Among iron based superconductors, the layered iron chalcogenide Fe(Te1-xSex) is structurally the simplest and has attracted considerable attentions. It has been speculated from bulk studies that nanoscale inhomogeneous superconductivity may inherently exist in this system. However, this has not been directly observed from nanoscale transport measurements. In this work, through simple micromechanical exfoliation and high precision low-energy ion milling thinning, we prepared Fe(Te0.5Se0.5) nano-flake with various thickness and systematically studied the correlation between the thickness and superconducting phase transition. Our result revealed a systematic evolution of superconducting transition with thickness. When the thickness of Fe(Te0.5Se0.5) flake is reduced down to 12nm, i.e. the characteristic length of Te/Se fluctuation, the superconducting current path and the metallicity of normal state in Fe(Te0.5Se0.5) atomic sheets is suppressed. This observation provides the first direct transport evidence for the nano-scale inhomogeneous nature of superconductivity in Fe(Te1-xSex).

cond-mat.supr-con↗

arXiv2016

Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances

Single crystal tungsten ditelluride (WTe2) has recently been discovered to exhibit non-saturating extreme magnetoresistance in bulk; it has also emerged as a new layered material from which atomic layer crystals can be extracted. While atomically thin WTe2 is attractive for its unique properties, little study has been conducted on single- and few-layer WTe2. Here we report the isolation of single- and few-layer WTe2, as well as fabrication and characterization of the first WTe2 suspended nanostructures. We have observed new Raman signatures of few-layer WTe2 that have been theoretically predicted but not yet reported to date, in both on-substrate and suspended WTe2 flakes. We have further probed the nanomechanical properties of suspended WTe2 structures by measuring their flexural resonances, and obtain a Young's modulus of E_Y~80GPa for the suspended WTe2 flakes. This study paves the way for future investigations and utilization of the multiple new Raman fingerprints of single- and few-layer WTe2, and for exploring mechanical control of WTe2 atomic layers.

cond-mat.mes-hall↗

arXiv2016

Topological nodal-line fermions in ZrSiSe and ZrSiTe

The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The study of nodal-line semimetal is still at initial stage; only three material systems have been verified to host nodal line fermions until now, including PbTaSe2, PtSn 4and ZrSiS. In this letter, we report evidence of nodal line fermions in ZrSiSe and ZrSiTe probed in de Haas - van Alphen (dHvA) quantum oscillations. Although ZrSiSe and ZrSiTe share similar layered structure with ZrSiS, our measurements of angular dependences of dHvA oscillations indicate the Fermi surface (FS) enclosing Dirac nodal line is of 2D character in ZiSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal line fermion density in ZrSi(S/Se) (~ 10^20-10^21 cm^-3) is much higher than the Dirac/Weyl fermion density of any known topological materials. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers a promising platform to verify the predicted 2D topological insulator in the monolayer materials with ZrSiS-type structure

cond-mat.mtrl-sci↗

arXiv2016

Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2

Quantum topological materials, exemplified by topological insulators, three-dimensional Dirac semimetals and Weyl semimetals, have attracted much attention recently because of their unique electronic structure and physical properties. Very lately it is proposed that the three-dimensional Weyl semimetals can be further classified into two types. In the type I Weyl semimetals, a topologically protected linear crossing of two bands, i.e., a Weyl point, occurs at the Fermi level resulting in a point-like Fermi surface. In the type II Weyl semimetals, the Weyl point emerges from a contact of an electron and a hole pocket at the boundary resulting in a highly tilted Weyl cone. In type II Weyl semimetals, the Lorentz invariance is violated and a fundamentally new kind of Weyl Fermions is produced that leads to new physical properties. WTe2 is interesting because it exhibits anomalously large magnetoresistance. It has ignited a new excitement because it is proposed to be the first candidate of realizing type II Weyl Fermions. Here we report our angle-resolved photoemission (ARPES) evidence on identifying the type II Weyl Fermion state in WTe2. By utilizing our latest generation laser-based ARPES system with superior energy and momentum resolutions, we have revealed a full picture on the electronic structure of WTe2. Clear surface state has been identified and its connection with the bulk electronic states in the momentum and energy space shows a good agreement with the calculated band structures with the type II Weyl states. Our results provide spectroscopic evidence on the observation of type II Weyl states in WTe2. It has laid a foundation for further exploration of novel phenomena and physical properties in the type II Weyl semimetals.

cond-mat.mes-hall↗

arXiv2014

Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 $cm^2$/Vs. At low temperatures, we observe gate-tunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 $m_e$ as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications.

cond-mat.mes-hall↗

arXiv2014

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical devices with acceptable performance still remains as a challenge. Employing tungsten disulfide multilayer thin crystals, we demonstrate that using gold as the only contact metal and choosing appropriate thickness of the crystal, high performance transistor with on/off ratio of $10^{8}$ and mobility up to $234\:cm^{2}V^{-1}s^{-1}$ at room temperature can be realized in a simple device structure. Further low temperature study revealed that the high performance of our device is caused by the minimized Schottky barrier at the contact and the existence of a shallow impurity level around 80 meV right below the conduction band edge. From the analysis on temperature dependence of field-effect mobility, we conclude that strongly suppressed phonon scattering and relatively low charge impurity density are the key factors leading to the high mobility of our tungsten disulfide devices.

cond-mat.mes-hall↗

arXiv2014

In situ diffraction study of catalytic hydrogenation of VO2: Stable phases and origins of metallicity

Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K between a high temperature, tetragonal, metallic state (T) and a low temperature, monoclinic, insulating state (M1), driven by electron-electron and electron-lattice interactions. Intercalation of VO2 with atomic hydrogen has been demonstrated, with evidence that this doping suppresses the transition. However, the detailed effects of intercalated H on the crystal and electronic structure of the resulting hydride have not been previously reported. Here we present synchrotron and neutron diffraction studies of this material system, mapping out the structural phase diagram as a function of temperature and hydrogen content. In addition to the original T and M1 phases, we find two orthorhombic phases, O1 and O2, which are stabilized at higher hydrogen content. We present density functional calculations that confirm the metallicity of these states and discuss the physical basis by which hydrogen stabilizes conducting phases, in the context of the metal-insulator transition.

cond-mat.mtrl-sci↗