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Jiangteng Liu

Publications and source records attributed to Jiangteng Liu.

4 recordsLinked to original sources

Tripling of the Superconducting Critical Current Density in BaFe$_2$(As$_{1-x}$P$_x$)$_2$ Retained After Pressure Release

Superconducting performance is tunable not only via chemical modification or defect engineering, but also through external parameters such as pressure, though this method remains less readily accessible. In this work, we study how compression influences vortex dynamics and critical currents in an iron-based superconductor. Specifically, we perform magnetization measurements using an off-the-shelf pressure cell to investigate the effects of hydrostatic pressures up to 1.08 GPa on the magnetic properties of BaFe$_2$(As$_{0.62}$P$_{0.38}$)$_2$ crystals across a range of temperatures $T$ and magnetic fields $H$. Although these pressures minimally affect the superconducting critical temperature, they produce a clear increase in the critical current density $J_c(T,H)$, a pronounced reduction in the rate of thermally activated vortex motion $S(T,H)$, and can change the dominant vortex pinning mechanism. Furthermore, the effects of pressure are irreversible: after pressurization and subsequent release at room temperature, high-density microcracks are observed and the crystals retain their enhanced critical current densities. The second magnetization peak vanishes above 18 K after the pressure cycle, which we attribute to a transition from predominantly $δκ$ pinning to a mixed mechanism of $δT_c$ and surface pinning. Lastly, a threefold increase in $J_c$, a more than 40\% reduction in $S$ at 8~K and 0.5~T, and an expanded elastic-creep region were achieved after $1-2$ pressure cycles. These findings demonstrate the potential utility of pressure cycling for improving $J_c$, which may offer a simpler alternative compared to approaches such as chemical doping or the introduction of artificial pinning centers.

cond-mat.supr-con

Fabrication and Structural Analysis of Trilayers for Tantalum Josephson Junctions with Ta$_2$O$_5$ Barriers

Tantalum (Ta) has emerged as a promising low-loss material, enabling record coherence times in superconducting qubits. This enhanced performance is largely attributed to its stable native oxide, which may host fewer two-level system (TLS) defects, which are the key contributors to decoherence in superconducting circuits. Nevertheless, aluminum oxide remains the predominant choice for Josephson junction (JJ) barriers in most qubit architectures. Here, we investigate techniques for forming high-quality oxide layers on $α$-phase tantalum films to develop tantalum-oxide JJ barriers. We explore thermal oxidation in a tube furnace, rapid thermal annealing, and plasma oxidation of both room-temperature and heated Ta films, characterize the resulting structures using X-ray techniques and electron microscopy, and propose a mechanistic picture of the oxidation pathways. We find that plasma oxidation provides the smoothest Ta$_2$O$_5$ layers, is compatible with in situ Ta deposition, and offers thickness control through the annealing temperature, advantageous for JJ fabrication. Lastly, we evaluate methods for growing Ta/TaO$_x$/Ta trilayers. All trilayers showed c-axis-oriented columnar growth of the bottom Ta layer, with sapphire substrates producing larger, better-aligned grains yet higher dislocation densities than silicon. Nucleation of c-axis-oriented $α$-Ta on tantalum-oxide required an Nb seed layer, as direct Ta deposition yielded amorphous Ta. These results demonstrate the feasibility of $α$-Ta/Nb/TaO$_x$/$α$-Ta stacks for JJs with clean interfaces.

cond-mat.supr-con

Higher critical currents yet faster vortex creep in EuBa$_2$Cu$_3$O$_y$ films containing coherent artificial pinning centers

The electromagnetic properties of type-II superconductors depend on vortices -- magnetic flux lines whose motion introduces dissipation that can be mitigated by pinning from material defects. The material disorder landscape is tuned by the choice of materials growth technique and incorporation of impurities that serve as vortex pinning centers. For example, metal organic deposition (MOD) and pulsed laser deposition (PLD) produce high-quality superconducting films with uncorrelated versus correlated disorder, respectively. Here, we study vortex dynamics in PLD-grown EuBa$_2$Cu$_3$O$_y$ films containing varying concentrations of BaHfO$_3$ inclusions and compare our results with those of MOD-grown (Y,Gd)Ba$_2$Cu$_3$O$_y$ films. Despite both systems exhibiting behavior consistent with strong pinning theory, which predicts the critical current density $J_c$ based on vortex trapping by randomly distributed spherical inclusions, we find striking differences in the vortex dynamics owing to the correlated versus uncorrelated disorder. Specifically, we find that the EuBa$_2$Cu$_3$O$_y$ films grown without inclusions exhibit surprisingly slow vortex creep, comparable to the slowest creep rates achieved in (Y,Gd)Ba$_2$Cu$_3$O$_y$ films containing high concentrations of BaHfO$_3$. Whereas adding inclusions to (Y,Gd)Ba$_2$Cu$_3$O$_y$ is effective in slowing creep, BaHfO$_3$ increases creep in EuBa$_2$Cu$_3$O$_y$ even while concomitantly improving $J_c$. Lastly, we find evidence of variable range hopping and that $J_c$ is maximized at the BaHfO$_3$ concentration that hosts creep of large vortex bundles or a Bose glass state.

cond-mat.supr-con

Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions -- nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion-antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating developing methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in-situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from approximately 150$^{\circ}$ C to 250$^{\circ}$C. Finally, we describe the crystallization kinetics using the Johnson-Mehl-Avrami-Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

cond-mat.mtrl-sci