arXiv subjects

Jianhua Zhao

Publications and source records attributed to Jianhua Zhao.

88 records · Page 5Linked to original sources

arXiv2017

Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire

A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anti-crossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point, at which all three QDs are on resonance with the Fermi level of the reservoirs, can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and super-exchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

cond-mat.mes-hall↗

arXiv2016

Engineering the polar magneto-optical Kerr effect in strongly strained L10-MnAl films

We report the engineering of the polar magnetooptical (MO) Kerr effect in perpendicularly magnetized L10-MnAl epitaxial films with remarkably tuned magnetization, strain, and structural disorder by varying substrate temperature (Ts) during molecular-beam epitaxy growth. The Kerr rotation was enhanced by a factor of up to 5 with Ts increasing from 150 to 350 oC as a direct consequence of the improvement of the magnetization. A similar remarkable tuning effect was also observed on the Kerr ellipticity and the magnitude of the complex Kerr angle, while the phase of the complex Kerr angle appears to be independent of the magnetization. The combination of the good semiconductor compatibility, the moderate coercivity of 0.3-8.2 kOe, the tunable polar MO Kerr effect of up to ~0.034o, and giant spin procession frequencies of up to ~180 GHz makes L10-MnAl films a very interesting MO material. Our results give insights on both the microscopic mechanisms of the MO Kerr effect in L10-MnAl alloys and their scientific and technological application potential in the emerging spintronics and ultrafast MO modulators.

cond-mat.mtrl-sci↗

arXiv2016

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

cond-mat.mtrl-sci↗

arXiv2016

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO$_2$ substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of $Δ_{ST}\sim 2.3$ meV, a strong spin-orbit interaction of $Δ_{SO}\sim 140$ $μ$eV, and a large and strongly level-dependent Landé g factor of $\sim 12.5$. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

cond-mat.mes-hall↗

arXiv2016

Intrinsic Paramagnetic Meissner Effect due to s-wave Odd-Frequency Superconductivity

In 1933, Meissner and Ochsenfeld reported the expulsion of magnetic flux, the diamagnetic Meissner effect, from the interior of superconducting lead. This discovery was crucial in formulating the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In exotic superconducting systems BCS theory does not strictly apply. A classical example is a superconductor-magnet hybrid system where magnetic ordering breaks time-reversal symmetry of the superconducting condensate and results in the stabilisation of an odd-frequency superconducting state. It has been predicted that under appropriate conditions, odd-frequency superconductivity should manifest in the Meissner state as fluctuations in the sign of the magnetic susceptibility meaning that the superconductivity can either repel (diamagnetic) or attract (paramagnetic) external magnetic flux. Here we report local probe measurements of faint magnetic fields in a Au/Ho/Nb trilayer system using low energy muons, where antiferromagnetic Ho (4.5 nm) breaks time-reversal symmetry of the proximity induced pair correlations in Au. From depth-resolved measurements below the superconducting transition of Nb we observe a local enhancement of the magnetic field in Au that exceeds the externally applied field, thus proving the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state.

cond-mat.supr-con↗

arXiv2015

Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets

Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here we report on a new route towards growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ~10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes towards the development of InSb-based devices for applications in nanoelectronics, optoelectronics and quantum electronics, and for study of fundamental physical phenomena.

cond-mat.mtrl-sci↗

arXiv2015

Description and comparison of algorithms for correcting anisotropic magnification in cryo-EM images

Single particle electron cryomicroscopy (cryo-EM) allows for structures of proteins and protein complexes to be determined from images of non-crystalline specimens. Cryo-EM data analysis requires electron microscope images of randomly oriented ice-embedded protein particles to be rotated and translated to allow for coherent averaging when calculating three-dimensional (3D) structures. Rotation of 2D images is usually done with the assumption that the magnification of the electron microscope is the same in all directions. However, due to electron optical aberrations, this condition is not met with some electron microscopes when used with the settings necessary for cryo-EM with a direct detector device (DDD) camera. Correction of images by linear interpolation in real space has allowed high-resolution structures to be calculated from cryo-EM images for symmetric particles. Here we describe and compare a simple real space method, a simple Fourier space method, and a somewhat more sophisticated Fourier space method to correct images for a measured anisotropy in magnification. Further, anisotropic magnification causes contrast transfer function (CTF) parameters estimated from image power spectra to have an apparent systematic astigmatism. To address this problem we develop an approach to adjust CTF parameters measured from distorted images so that they can be used with corrected images. The effect of anisotropic magnification on CTF parameters provides a simple way of detecting magnification anisotropy in cryo-EM datasets.

physics.ins-det↗

arXiv2014

Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition.

cond-mat.mtrl-sci↗

arXiv2014

Bias current dependence of the spin lifetime in insulating Al$_{0.3}$Ga$_{0.7}$As

The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al$_{0.3}$Ga$_{0.7}$As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistance-area product shows a strong increase with bias current for reverse bias and small forward bias until 150 $μ$A, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5 K to 30 K.

cond-mat.mtrl-sci↗

arXiv2013

Formal Verification of `Programming to Interfaces' Programs

This paper presents a formal approach to specify and verify object-oriented programs written in the `programming to interfaces' paradigm. Besides the methods to be invoked by its clients, an interface also declares a set of abstract function/predicate symbols, together with a set of constraints on these symbols. For each method declared in this interface, a specification template is given using these abstract symbols. A class implementing this interface can give its own definitions to the abstract symbols, as long as all the constraints are satisfied. This class implements all the methods declared in the interface such that the method specification templates declared in the interface are satisfied w.r.t. the definitions of the abstract function symbols in this class. Based on the constraints on the abstract symbols, the client code using interfaces can be specified and verified precisely without knowing what classes implement these interfaces. Given more information about the implementing classes, the specifications of the client code can be specialized into more precise ones without re-verifying the client code. Several commonly used interfaces and their implementations (including Iterator, Observer, Comparable, and Comparator) are used to demonstrate that the approach in this paper is both precise and flexible.

cs.LO↗

arXiv2013

Recent progress in perpendicularly magnetized Mn-based binary alloy films

In this article, we review the recent progress in growth, structural characterization, magnetic properties and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy. In the first part of this review, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording and permanent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxAl with strong perpendicular anisotropy. Then, in the second and third parts, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxAl, respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural chracterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves and spin injector into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

cond-mat.mtrl-sci↗

arXiv2013

Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications

MnxGa films with high perpendicular anisotropy, coercivity and energy product have great application potential in ultrahigh-density perpendicular recording, permanent magnets, spin-transfer-torque memory and oscillators, magneto-resistance sensors and ferromagnetic metal/semiconductor heterostructure devices. Here we present a comprehensive diagram of effective magnetism-tailoring of perpendicularly magnetized MnxGa films grown on III-V semiconductor GaAs by using molecular-beam epitaxy for the first time, by systematically investigating the wide-range composition and detailed post-growth annealing effects. We show that the (001)-orientated MnxGa films with L10 or D022 ordering could be crystallized on GaAs in a very wide composition range from x=0.76 to 2.6. L10-ordered MnxGa films show robust magnetization, high remanent ratio, giant perpendicular anisotropy, high intrinsic and extrinsic coercivity, and large energy product, which make this kind of material favorable for perpendicular magnetic recording, high-performance spintronic devices and permanent magnet applications. In contrast, D022-ordered films exhibit lower perpendicular anisotropy and weaker magnetism. Post-growth annealing MnxGa films studies reveal high thermal-stability up to 450 oC, and effective tailoring of magnetic properties can be realized by prolonging annealing at 450 oC. These results would be helpful for understanding this kind of material and designing new spintronic devices for specific practical applications.

cond-mat.mtrl-sci↗

arXiv2012

Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product

We present the fascinating magnetic properties in homogenous noble-metal-free and rare-earth-free L10-Mn1.5Ga epitaxial films on GaAs (001), including ultrahigh perpendicular coercivity remarkably tunable from 8.1 to 42.8 kOe, giant perpendicular magnetocrystalline anisotropy with a maximum of 22.9 Merg/cc, easily controllable magnetization from 27.3 to 270.5 emu/cc, excellent squareness exceeding 0.94 and large magnetic energy product up to 2.6 MGOe. These magnificent room-temperature magnetic characteristics make our L10-Mn1.5Ga films multifunctional as outstanding and cost-effective alternative for not only perpendicular magnetic recording bits with areal density over 30 Tb inch-2 and thermal stability over 60 years, but variety of novel devices with high magnetic-noise immunity and thermal stability like spin-torque MRAMs and oscillators pillars below 5 nm in dimension, and giant magnetoresistance sensors able to measure high fileds up to 42 kOe . Moreover, this kind of materials can also be expected as permanent magnets for replacing the expensive rare-earth magnets widely used today.

cond-mat.mtrl-sci↗

arXiv2010

Scope Logic with Local Reasoning and Pre/Post-State Properties

This paper presents an extension to Hoare logic for pointer program verification. Logic formulas with user-defined recursive functions are used to specify properties on the program states before/after program executions. Three basic functions are introduced to represents memory access, record-field access and array-element access. Some axioms are introduced to specify these basic functions in our logic. The concept Memory Scope Function (MSF) is introduced in our logic. Given a recursive function $f$, the MSF of $f$ computes the set of memory units accessed during the evaluation of $f$. A set of rules are given to derive the definition of this MSF syntactically from the definition of $f$. As MSFs are also recursive functions, they also have their MSFs. An axiom is given to specify that an MSF contains its MSF. Based on this axiom, local reasoning is supported with predicate variables. Pre-state terms are used to specify the relations between pre-states and post-states. People can use pre-state terms in post-conditions to represents the values on the pre-state. The axiom of assignment statements in Hoare's logic is modified to deal with pointers. The basic idea is that during the program execution, a recursive function is evaluated to the same value as long as no memory unit in its memory scope is modified. Another proof rule is added for memory allocation statements. We use a simple example to show that our logic can deal with pointer programs in this paper. In the appendix, the Shorre-Waite algorithm is proved using our logic. We also use the selection-sort program to show that our logic can be used to prove program with indirectly-specified components.

cs.LO↗

arXiv2010

Band-tail shape and transport near the metal-insulator transition in Si-doped Al(0.3)Ga(0.7)As

In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si (1x10^19 cm^-3 for sample 1 (S1) and 9x10^17 cm^-3 for sample 2 (S2)) and vary the effective electron density between 10^14 and 10^18 cm^-3. The metal-insulator transition (MIT) for S1 is found to occur at a critical carrier concentration of 5.7x10^16 cm^-3 at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band-tail of the density of states (DOS) in Al(0.3)Ga(0.7)As is found electrically through transport measurements. It is determined to be exponential in character, with an exponent of -1.25 for S1 and -1.38 for S2.

cond-mat.mtrl-sci↗

arXiv2009

Scope Logic: Extending Hoare Logic for Pointer Program Verification

This paper presents an extension to Hoare logic for pointer program verification. First, the Logic for Partial Function (LPF) used by VDM is extended to specify memory access using pointers and memory layout of composite types. Then, the concepts of data-retrieve functions (DRF) and memory-scope functions (MSF) are introduced in this paper. People can define DRFs to retrieve abstract values from interconnected concrete data objects. The definition of the corresponding MSF of a DRF can be derived syntactically from the definition of the DRF. This MSF computes the set of memory units accessed when the DRF retrieves an abstract value. This memory unit set is called the memory scope of the abstract value. Finally, the proof rule of assignment statements in Hoare's logic is modified to deal with pointers. The basic idea is that a virtual value keeps unmodified as long as no memory unit in its scope is over-written. Another proof rule is added for memory allocation statements. The consequence rule and the rules for control-flow statements are slightly modified. They are essentially same as their original version in Hoare logic. An example is presented to show the efficacy of this logic. We also give some heuristics on how to verify pointer programs.

cs.LO↗