arXiv subjects

Jianpeng Liu

Publications and source records attributed to Jianpeng Liu.

At least 37 records · Page 2Linked to original sources

arXiv2025

Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene

In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of orbital Chern insulators, electrically switchable quantum anomalous Hall effect (QAHE) remains rare, necessitating further investigation. Here, we demonstrate electric-field-induced reversal of orbital Chern insulators in a moire superlattice composed of rhombohedral heptalayer graphene (r-7LG) aligned with hexagonal boron nitride. At one electron per moire unit cell, two emerging Chern insulating phases - one pointing away from and the other toward graphene's charge neutrality point in the phase diagram of carrier density (n) versus magnetic field (B) - exhibit energetic competition modulated by both n and B. This switchable QAHE chirality in r-7LG demonstrates a layer-number dependent response: similar phenomena in moire r-6LG require much higher magnetic fields and are absent in thinner rhombohedral graphene. Our findings establish moire-engineered rhombohedral graphene as a promising platform for exploring topological quantum materials with electrically controllable chiral edge modes and magnetic order.

cond-mat.mes-hall↗

arXiv2025

Orbital-selective band modifications in a charge-ordered kagome metal LuNb$_6$Sn$_6$

The origin of the charge order in kagome lattice materials has attracted great interest due to the unique electronic structure features connected to kagome networks and the interplay between electron and lattice degrees of freedom. Recently, compounds with composition $Ln$Nb$_6$Sn$_6$ ($Ln$ = Ce-Nd, Sm, Gd-Tm, Lu, Y) appear as a new family of kagome metals, structurally analogous to $R$V$_6$Sn$_6$ ($R$ = Sc, Y, or rare earth) systems. Among them, LuNb$_6$Sn$_6$ emerges as a novel material hosting charge density wave (CDW) with a $\sqrt{3}$ $\times$ $\sqrt{3}$ $\times$ $3$ wave vector, akin to that in ScV$_6$Sn$_6$. Here, we employ high-resolution angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations to systematically investigate the electronic properties of LuNb$_6$Sn$_6$. Our observation reveals the characteristic band structures of the "166" kagome system. A charge instability driven by Fermi surface nesting is decisively ruled out through an analysis of the interactions between van Hove singularities. Across the CDW transition, we observe orbital-selective band modifications, with noticeable evolutions of Lu 5$d$ and Sn 5$p$ electrons, while Nb 4$d$ electrons exhibit minimal change, suggesting that the Lu and Sn sites other than the Nb kagome lattice play a key role in the formation of CDW. Our findings substantiate a universal lattice-driven CDW mechanism rather than a charge-instability-driven one in the "166" kagome compounds, making it a distinct material class compared to other charge-ordered kagome systems, such as $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) and FeGe.

cond-mat.str-el↗

arXiv2025

Function Fitting Based on Kolmogorov-Arnold Theorem and Kernel Functions

This paper proposes a unified theoretical framework based on the Kolmogorov-Arnold representation theorem and kernel methods. By analyzing the mathematical relationship among kernels, B-spline basis functions in Kolmogorov-Arnold Networks (KANs) and the inner product operation in self-attention mechanisms, we establish a kernel-based feature fitting framework that unifies the two models as linear combinations of kernel functions. Under this framework, we propose a low-rank Pseudo-Multi-Head Self-Attention module (Pseudo-MHSA), which reduces the parameter count of traditional MHSA by nearly 50\%. Furthermore, we design a Gaussian kernel multi-head self-attention variant (Gaussian-MHSA) to validate the effectiveness of nonlinear kernel functions in feature extraction. Experiments on the CIFAR-10 dataset demonstrate that Pseudo-MHSA model achieves performance comparable to the ViT model of the same dimensionality under the MAE framework and visualization analysis reveals their similarity of multi-head distribution patterns. Our code is publicly available.

cs.LG↗

arXiv2025

Fractional topological states in rhombohedral multilayer graphene modulated by kagome superlattice

Fractional quantum anomalous Hall effects realized in twisted bilayer MoTe$_2$ and multilayer-graphene-based moiré heterostructures have captured a tremendous growth of interest. In this work, we propose that rhombohedral multilayer graphene coupled with an artificial kagome superlattice potential is a new platform to realize various fractional topological phases. Taking Bernal bilayer graphene as the simplest example, when it is placed on top of a prepatterned SiO$_2$ substrate with periodic arrays of holes arranged into kagome lattice, the system would be subject to a tunable kagome superlattice potential once an electrostatic voltage drop between the top and bottom gates is applied. Then, we theoretically study the electronic band structures, topological properties, and quantum geometric properties of the Bloch states of Bernal bilayer graphene coupled with a realistic kagome superlattice potential, which is well benchmarked by transport measurements in the weak superlattice-potential regime. We find that the system may exhibit nearly ideal topological flat bands in a substantial region of the parameter space spanned by superlattice constant and electrostatic potential strength. When these topological flat bands are fractionally filled, exact diagonalization calculations suggest that the system would exhibit rich fractional topological phases at 1/3, 2/3, 2/5, 3/5 and 1/2 fillings including both fractional Chern insulators and anomalous composite Fermi liquids under zero magnetic field.

cond-mat.mes-hall↗

arXiv2025

Charge Dynamics of an Unconventional Three-Dimensional Charge Density Wave in Kagome FeGe

We report on the charge dynamics of kagome FeGe, an antiferromagnet with a charge density wave (CDW) transition at $T_{\mathrm{CDW}} \simeq 105$ K, using polarized infrared spectroscopy and band structure calculations. We reveal pronounced optical anisotropy along the $a$- and $c$-axis, as well as an unusual response associated with three-dimensional CDW order. Above $T_{\mathrm{CDW}}$, there is a notable transfer of spectral weight (SW) from high to low energies, promoted by the magnetic splitting-induced shift in bands. Across the CDW transition, we observe a sudden SW transfer from low to high energies over a broad range, along with the emergence of new excitations around 1200 cm$^{-1}$. These results contrast with observations from other kagome metals like CsV$_3$Sb$_5$, where the nesting of VHSs leads to a clear CDW gap feature. Instead, our findings can be accounted for by a $2\times2\times2$ CDW ground state driven by a first-order structural transition involving large partial Ge1-dimerization. Our study thus unveils a complex interplay among structure, magnetism, and charge order, offering valuable insights for a comprehensive understanding of CDW order in FeGe.

cond-mat.str-el↗

arXiv2025

Orbital magnetoelectric coupling of three dimensional Chern insulators

Orbital magnetoelectric effect is closely related to the band topology of bulk crystalline insulators. Typical examples include the half quantized Chern-Simons orbital magnetoelectric coupling in three dimensional (3D) axion insulators and topological insulators, which are the hallmarks of their nontrivial bulk band topology. While the Chern-Simons coupling is well defined only for insulators with zero Chern number, the orbital magnetoelectric effects in 3D Chern insulators with nonzero (layer) Chern numbers are still open questions. In this work, we propose a never-mentioned quantization rule for the orbital magnetoelectric response in 3D Chern insulators, the spatial gradient of which is exactly quantized in unit of $e^2/h$. By theoretical analysis and numerical simulations, we demonstrate that such quantized orbital magnetoelectric response is exact for various types of interlayer hoppings and stackings, and remains robust even against disorder and lack of crystalline symmetries. We argue that the exact quantization has a topological origin and is protected by Chern number. Furthermore, we propose two promising material platforms to observe the proposed quantized orbital magnetoelectric response thanks to recent experimental developments in detecting spatial magnetic-field distributions in device systems.

cond-mat.mes-hall↗

arXiv2025

Anomalous Chern-Simons orbital magnetoelectric coupling of three-dimensional Chern insulators: gauge-discontinuity formalism and adiabatic pumping

Chern-Simons orbital magnetoelectric (OME) coupling is usually the hallmark of nontrivial band topology in three-dimensional (3D) crystalline insulators. However, if a 3D insulator exhibits nonzero Chern number within any two-dimensional plane of the Brillouin zone, then traditionally the Chern-Simons coupling becomes ill defined for such 3D Chern insulators due to topological obstructions. In this work, by employing a ``gauge-discontinuity" formalism, we resolve this long-standing issue and rigorously derive a quantized layer-resolved OME response in 3D Chern insulators. We demonstrate that the difference of the layer-resolved OME coupling between adjacent layers is universally quantized in unit of $-C e^2/h$, where $C$ is the Chern number. This quantization arises from an anomalous contribution to the Chern-Simons OME coupling, which is closely associated with the Berry curvature of the occupied bands and the hybrid Wannier centers along the direction of the Chern vector $(0,0, C)$. Furthermore, we demonstrate that the anomalous Chern-Simons coupling can be transported by an exact integer quantum from one unit cell to its neighboring cell through an adiabatic cyclic pumping process, accompanied by a quantized displacement of Wannier center along the direction of the Chern vector. Our work provides a rigorous theoretical framework for understanding magnetoelectric response in 3D Chern insulators and opens avenues for designing topological quantum phenomena in layered systems.

cond-mat.mes-hall↗

arXiv2025

Tunable Fractional Chern Insulators in Rhombohedral Graphene Superlattices

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FCIs have been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here, we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices, which exhibit both integer and fractional quantum anomalous Hall effects with rich tunability including electric displacement field, perpendicular magnetic field and in-plane magnetic field. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a quantum phase transition showing a sign reversal of the Hall resistivity at finite magnetic fields. Surprisingly, the FCI state at v = 2/3 survives in the phase transitions, exhibiting a robust quantized Hall resistivity across both phases. Finally we have further demonstrated the indispensable role moire potential plays in the formation of the flat Chern band from a theoretical perspective. Our work has established RHG/hBN moire superlattices as a promising platform for exploring quasi-particles with fractional charge and non-Abelian anyons at zero magnetic field.

cond-mat.mes-hall↗

arXiv2025

Correlation stabilized anomalous Hall crystal in bilayer graphene

When the charge density is sufficiently low, interacting two-dimensional electron gas (2DEG) would undergo a phase transition from homogeneous Fermi liquid to an electronic crystal state, known as Wigner crystal. Besides conventional 2DEG, various topological fermionic excitations may also be realized in 2D materials. For example, ``high-order" Dirac fermions exhibiting nontrivial Berry phases may approximately characterize the low-energy excitations in rhombohedral multilayer graphene (RMG). In this work, we develop a beyond-mean-field theoretical framework to study the interacting ground states and single-particle excitations in slightly charge-doped RMG under vertical electric field. We find that transitions from Fermi liquid to trivial Wigner-crystal states would occur at critical carrier density $\sim 10^{10}\,\textrm{cm}^{-2}$ for all $n$-layer RMG (with $n=2, 3, 4, 5, 6$) which are approximately described by $n$-order Dirac-fermion models. Most saliently, using a more realistic modeling of bilayer graphene including trigonal warping effects, we find that an anomalous Hall crystal state with spontaneous quantized anomalous Hall conductivity would emerge when the carrier density is below $\sim 1\times 10^{11}\,\text{cm}^{-2}$, and it becomes the unique ground state over trivial Wigner crystal when the density is further lower. Counter intuitively, such topological anomalous Hall crystal becomes more stable than the trivial Wigner crystal due to the lower correlation energy gained from dynamical charge fluctuations, which is beyond mean-field description. Our work suggests that slightly carrier-doped bilayer graphene is one of the most promising candidates to realize anomalous Hall crystal. Moreover, the method developed in this work can be readily applied to other interacting 2D systems including moiré superlattices.

cond-mat.str-el↗

arXiv2024

Strong Inter-valley Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene

The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, utilizing angle-resolved photoemission spectroscopy with micrometer spatial resolution, we have revealed flat band replicas in superconducting MATBG, where MATBG is unaligned with its hexagonal boron nitride (hBN) substrate11. These replicas exhibit uniform energy spacing, approximately 150 +- 15 meV apart, indicative of strong electron-boson coupling. Strikingly, these replicas are absent in non-superconducting twisted bilayer graphene (TBG) systems, either when MATBG is aligned to hBN or when TBG deviates from the magic angle. Calculations suggest that the formation of these flat band replicas in superconducting MATBG are attributed to the strong coupling between flat band electrons and an optical phonon mode at the graphene K point, facilitated by inter-valley scattering. These findings, although do not necessarily put electron phonon coupling as the main driving force for the superconductivity in MATBG, unravel the unique electronic structure inherent in superconducting MATBG, thereby providing crucial information for understanding the unusual electronic landscape from which the superconductivity is derived.

cond-mat.mes-hall↗

arXiv2024

Real-space study of zero-field correlation in tetralayer rhombohedral graphene

Rhombohedral graphene (RG) has emerged as a promising platform for exploring exotic quantum phenomena, such as quantum magnetism, unconventional superconductivity, and fractional quantum anomalous Hall effects. Despite its potential, atomic-scale investigations of RG remain limited, hindering a detailed microscopic understanding of the origins of these correlated states. In this study, we employ scanning probe microscopy and spectroscopy to probe the intrinsic electronic states in trilayer and tetralayer RG. We identify a correlated insulating state with a 17 meV gap at the charge neutrality point in tetralayer RG, which is absent in the trilayer configuration. This gap is suppressed by applying a perpendicular magnetic field or doping the charge carrier density and does not exhibit inter-valley coherence patterns. We attribute this phenomenon to a symmetry-broken layer antiferromagnetic state, characterized by ferrimagnetic ordering in the outermost layers and antiferromagnetic coupling between them. To further investigate this magnetic correlated state, we conduct local scattering experiments. Within the correlated regime, a bound state emerges around a non-magnetic impurity but is absent near magnetic impurities, suggesting that non-magnetic doping induces a spin texture in the ferrimagnetic surface layers. Outside the correlated regime, Friedel oscillations are observed, allowing precise determination of the band dispersion in tetralayer RG. These findings provide atomic-scale evidences of zero-field correlations in RG and may be extended to study other exotic phases in RG.

cond-mat.mes-hall↗

arXiv2024

Giant domain wall anomalous Hall effect in an antiferromagnet

Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise to anomalous Hall effect (AHE) which scales with the net magnetization. The AHE is therefore not expected in antiferromagnets with vanishing small magnetization. However, large AHE was recently observed in certain antiferromagnets with noncolinear spin structure and nonvanishing Berry curvature. Here, we report another origin of AHE in a layered antiferromagnet EuAl2Si2, namely the domain wall (DW) skew scattering with Weyl points near the Fermi level, in experiments for the first time. Interestingly, the DWs form a unique periodic stripe structure with controllable periodicity by external magnetic field, which decreases nearly monotonically from 975 nm at 0 T to 232 nm at 4 T. Electrons incident on DW with topological bound states experience strong asymmetric scattering, leading to a giant AHE, with the DW Hall conductivity (DWHC) at 2 K and 1.2 T reaching a record value of ~ 1,5100 S cm-1 among bulk systems and being two orders of magnitude larger than the intrinsic anomalous Hall conductivity. The observation not only sets a new paradigm for exploration of large anomalous Hall effect, but also provides potential applications in spintronic devices.

cond-mat.str-el↗

arXiv2024

Probing band topology in ABAB and ABBA stacked twisted double bilayer graphene

Twisted graphene moire superlattice has been demonstrated as an exotic platform for investigating correlated states and nontrivial topology. Among the moire family, twisted double bilayer graphene (TDBG) is a tunable flat band system expected to show stacking-dependent topological properties. However, electron correlations and the band topology are usually intertwined in the flat band limit, rendering the unique topological property due to stacking still elusive. Focusing on a large-angle TDBG with weak electron correlations, here we probe the Landau level (LL) spectra in two differently stacked TDBG, i.e. ABBA- and ABAB-TDBG, to unveil their distinct topological properties. For ABBA-TDBG, we observe non-trivial topology at zero electric displacement filed, evident from both the emergence of Chern bands from half fillings and the closure of gap at CNP above a critical magnetic field. For ABAB-TDBG, by contrast, we find that the moire band is topologically trivial, supported by the absence of LLs from half fillings and the persistence of the gap at CNP above the critical magnetic fields. In addition, we also observe an evolution of the trivial-to-nontrivial topological transition at finite D fields, confirmed by the emerged Landau fans originating from quarter filling v = 1. Our result demonstrates, for the first time, the unique stacking-dependent topology in TDBG, offering a promising avenue for future investigations on topological states in correlated systems.

cond-mat.mes-hall↗

arXiv2024

Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene

The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interaction can further lift the SU(4) degeneracy, leading to the Chern insulator states. Here we report a complete sequence of zero-field Chern insulators at all odd integer fillings (v = +-1, +-3) with different chirality (C = 1 or -1) in hBN aligned MATBG which structurally breaks C2z symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. By slightly doping the v = +-3 states, we have observed new correlated insulating states at incommensurate moiré fillings which is highly suggested to be intrinsic Wigner crystals according to our theoretical calculations. Remarkably, we have observed prominent Streda-formula violation around v = -3 state. By doping the Chern gap at v = -3 with notable number of electrons at finite magnetic field, the Hall resistance Ryx robustly quantizes to ~ h/e2 whereas longitudinal resistance Rxx vanishes, indicating that the chemical potential is pinned within a Chern gap, forming an incommensurate Chern insulator. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C2z symmetry. Our findings also demonstrate that doped topological flat band is an ideal platform to investigate exotic incommensurate correlated topological states.

cond-mat.mes-hall↗

arXiv2024

Evidence chain for time-reversal symmetry-breaking kagome superconductivity

Superconductivity and magnetism are antagonistic quantum matter, while their intertwining has long been considered in frustrated-lattice systems1-3. In this work, we utilize scanning tunneling microscopy and muon spin resonance to discover time-reversal symmetry-breaking superconductivity in kagome metal Cs(V,Ta)3Sb5, where the Cooper pairing exhibits magnetism and is modulated by it. In the magnetic channel, we observe spontaneous internal magnetism in a full-gap superconducting state. Under perturbations of inverse magnetic fields, we detect a time-reversal asymmetrical interference of Bogoliubov quasi-particles at a circular vector. At this vector, the pairing gap spontaneously modulates, which is distinct from pair density waves occurring at a point vector and consistent with the theoretical proposal of unusual interference effect under time-reversal symmetry-breaking. The correlation between internal magnetism, Bogoliubov quasi-particles, and pairing modulation provides a chain of experimental clues for time-reversal symmetry-breaking kagome superconductivity.

cond-mat.supr-con↗

arXiv2024

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, we employ advanced spatial- and angle-resolved photoemission spectroscopy technique to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials. The application of displacement field via in-situ electrostatic gating introduces a sizable and tunable electronic bandgap, proportional to the field strength up to 100 meV. Meanwhile, the moiré potential, induced by aligning the underlying hexagonal boron nitride substrate, extends the bandgap by ~ 20 meV. Theoretical calculations, effectively capture the experimental observations. Our investigation provides a quantitative understanding of how these two mechanisms collaboratively modulate the band gap in bilayer graphene, offering valuable guidance for the design of graphene-based electronic devices.

cond-mat.mes-hall↗

arXiv2023

Theory of fractional Chern insulator states in pentalayer graphene moiré superlattice

The experimental discoveries of fractional quantum anomalous Hall effects under zero magnetic fields in both transition metal dichalcogenide and pentalayer graphene moiré superlattices have aroused significant research interest. In this work, we theoretically study the fractional quantum anomalous Hall states (also known as fractional Chern insulator states) in pentalayer graphene moiré superlattice. Starting from the highest energy scale ($\sim\!2\,$eV) of the continuum model, we first construct a renormalized low-energy model that applies to a lower cutoff $\sim\!0.15\,$eV using renormalization group approach. Then, we study the ground states of the renormalized low-energy model at filling 1 under Hartree-Fock approximation in the presence of tunable but self-consistently screened displacement field $D$ with several experimentally relevant background dielectric constant $ε_r$. Two competing Hartree-Fock states are obtained at filling 1, which give rise to two types of topologically distinct isolated flat bands with Chern number 1 and 0, respectively. We continue to explore the interacting ground states of the two types of isolated flat bands at hole dopings of 1/3, 2/5, 3/5, and 2/3 (corresponding electron fillings of 2/3, 3/5, 2/5, and 1/3 with respect to charge neutrality). Setting $ε_r=5$, our exact-diagonalization calculations suggest that the system stays in fractional Chern insulator (FCI) state at 2/3 electron filling when $0.9\,\textrm{V/nm}\leq\!D\!\leq 0.92\,\textrm{V/nm}$; while no robust FCI state is obtained at 1/3 electron filling. We have also obtained composite-fermion type FCI ground states at 3/5 electron filling within $0.9\,\textrm{V/nm}\leq\! D \!\leq\!0.95\,\textrm{V/nm}$ and $ε_r=5$. These numerical results are quantitatively consistent with experimental observations.

cond-mat.str-el↗

arXiv2023

Colossal Magnetoresistance in Twisted Intertwined Graphene Spirals

Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moir$\acute{e}$ system, which demonstrates CMR owing to its topological structure and high-quality crystal formation. We specifically investigate the electronic properties of three-dimensional (3D) intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3$^{\circ}$. Notably, at 14 T and 2 K, the magnetoresistance of these structures reached 1.7$\times$10$^7$%, accompanied by an unexpected metal-to-insulator transition as the temperature increased. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up new possibilities for achieving CMR by engineering the topological structure of 2D layered moir$\acute{e}$ systems.

cond-mat.mes-hall↗