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Jianshi Tang

Publications and source records attributed to Jianshi Tang.

12 recordsLinked to original sources

Training deep physical neural networks with local physical information bottleneck

Deep learning has revolutionized modern society but faces growing energy and latency constraints. Deep physical neural networks (PNNs) are interconnected computing systems that directly exploit analog dynamics for energy-efficient, ultrafast AI execution. Realizing this potential, however, requires universal training methods tailored to physical intricacies. Here, we present the Physical Information Bottleneck (PIB), a general and efficient framework that integrates information theory and local learning, enabling deep PNNs to learn under arbitrary physical dynamics. By allocating matrix-based information bottlenecks to each unit, we demonstrate supervised, unsupervised, and reinforcement learning across electronic memristive chips and optical computing platforms. PIB also adapts to severe hardware faults and allows for parallel training via geographically distributed resources. Bypassing auxiliary digital models and contrastive measurements, PIB recasts PNN training as an intrinsic, scalable information-theoretic process compatible with diverse physical substrates.

cs.LG

Optimized Cryo-CMOS Technology with VTH<0.2V and Ion>1.2mA/um for High-Peformance Computing

We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage (VTH) shift at low temperatures. The optimized NMOS and PMOS transistors, featured by VTH<0.2V, sub-threshold swing (SS)<30 mV/dec, and on-state current (Ion)>1.2mA/um at 77K, warrant a reliable sub-0.6V operation. Moreover, the enhanced driving strength of Cryo-CMOS inherited from a higher transconductance leads to marked improvements in elevating the ring oscillator frequency by 20%, while reducing the power consumption of the compute-intensive cryogenic IC system by 37% at 77K.

eess.SY

Sliding ferroelectric memories and synapses

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics.

cond-mat.mes-hall

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

physics.app-ph

Acoustic-Driven Magnetic Skyrmion Motion

Magnetic skyrmions have great potential for developing novel spintronic devices. The electrical manipulation of skyrmions has mainly relied on current-induced spin-orbit torques. A recent theoretical model suggested that the skyrmions could be more efficiently manipulated by surface acoustic waves (SAW), an elastic wave that can couple with magnetic moment through magnetoelastic effect. However, the directional motion of skyrmions that is driven by SAW is still missing. Here, we experimentally demonstrate the motion of Néel-type skyrmions in Ta/CoFeB/MgO/Ta multilayers driven by propagating SAW pulses from on-chip piezoelectric transducers. Our results reveal that the elastic wave with longitudinal and shear vertical displacements (Rayleigh wave) traps skyrmions, while the shear horizontal wave effectively drives the motion of skyrmions. In particular, a longitudinal motion along the SAW propagation direction and a transverse motion due to topological charge, are observed and further confirmed by our micromagnetic simulations. This work demonstrates a promising approach based on acoustic waves for manipulating skyrmions, which could offer new opportunities for ultra-low power spintronics.

cond-mat.mtrl-sci

Large-Scale Integrated Flexible Tactile Sensor Array for Sensitive Smart Robotic Touch

In the long pursuit of smart robotics, it has been envisioned to empower robots with human-like senses, especially vision and touch. While tremendous progress has been made in image sensors and computer vision over the past decades, the tactile sense abilities are lagging behind due to the lack of large-scale flexible tactile sensor array with high sensitivity, high spatial resolution, and fast response. In this work, we have demonstrated a 64x64 flexible tactile sensor array with a record-high spatial resolution of 0.9 mm (equivalently 28.2 pixels per inch), by integrating a high-performance piezoresistive film (PRF) with a large-area active matrix of carbon nanotube thin-film transistors. PRF with self-formed microstructures exhibited high pressure-sensitivity of ~385 kPa-1 for MWCNTs concentration of 6%, while the 14% one exhibited fast response time of ~3 ms, good linearity, broad detection range beyond 1400 kPa, and excellent cyclability over 3000 cycles. Using this fully integrated tactile sensor array, the footprint maps of an artificial honeybee were clearly identified. Furthermore, we hardware-implemented a smart tactile system by integrating the PRF-based sensor array with a memristor-based computing-in-memory chip to record and recognize handwritten digits and Chinese calligraphy, achieving high classification accuracies of 98.8% and 97.3% in hardware, respectively. The integration of sensor networks with deep learning hardware may enable edge or near-sensor computing with significantly reduced power consumption and latency. Our work could pave the road to building large-scale intelligent sensor networks for next-generation smart robotics.

cond-mat.mtrl-sci

Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate FET structure. The SOT strength can be modulated by a factor of 4 within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

cond-mat.str-el

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

cond-mat.mes-hall

Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit

We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of e2/h is found to persist even when the film thickness is beyond the two-dimensional (2D) hybridization limit. Meanwhile, the Chern insulator-featured chiral edge conduction is manifested by the non-local transport measurements. In contrast to the 2D hybridized thin film, an additional weakly field-dependent longitudinal resistance is observed in the 10 quintuple-layer film, suggesting the influence of the film thickness on the dissipative edge channel in the QAHE regime. The extension of QAHE into the three-dimensional thickness region addresses the universality of this quantum transport phenomenon and motivates the exploration of new QAHE phases with tunable Chern numbers. In addition, the observation of the scale-invariant dissipationless chiral propagation on a macroscopic scale makes a major stride towards ideal low-power interconnect applications.

cond-mat.mes-hall

Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields

Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch ferromagnets with a perpendicular (out-of-plane) magnetization. Currently, however, this typically requires the presence of an in-plane external magnetic field, which is a major obstacle for practical applications. Here we report for the first time on SOT-induced switching of out-of-plane magnetized Ta/Co20Fe60B20/TaOx structures without the need for any external magnetic fields, driven by in-plane currents. This is achieved by introducing a lateral structural asymmetry into our devices during fabrication. The results show that a new field-like SOT is induced by in-plane currents in such asymmetric structures. The direction of the current-induced effective field corresponding to this new field-like SOT is out-of-plane, which facilitates switching of perpendicular magnets. This work thus provides a pathway towards bias-field-free SOT devices.

cond-mat.mes-hall

Edge effect on resistance scaling rules in graphene nanostructures

We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low and high carrier densities, we show that the transport of single-layer nanoribbons lies in a strong localization regime, which can be attributed to an edge effect. We find that this edge effect can be weakened by enlarging the width, decreasing the carrier densities or adding an extra layer. From graphene nanoribbon to graphene sheet, the data show a dimensional crossover of the transport regimes possibly due to the drastic change of the edge effect.

cond-mat.mes-hall

Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons

Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.

cond-mat.mes-hall