arXiv subjects

Jiansong Gao

Publications and source records attributed to Jiansong Gao.

46 records · Page 3Linked to original sources

arXiv2012

Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications.

cond-mat.supr-con↗

arXiv2012

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of Tc makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices.

cond-mat.supr-con↗

arXiv2012

Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators

cond-mat.supr-con↗

arXiv2010

Titanium Nitride Films for Ultrasensitive Microresonator Detectors

Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors because: a) the critical temperature varies with composition (0 < Tc < 5 K); b) the normal-state resistivity is large, ρ_n ~ 100 $μ$Ohm cm, facilitating efficient photon absorption and providing a large kinetic inductance and detector responsivity; and c) TiN films are very hard and mechanically robust. Resonators using reactively sputtered TiN films show remarkably low loss (Q_i > 10^7) and have noise properties similar to resonators made using other materials, while the quasiparticle lifetimes are reasonably long, 10-200 $μ$s. TiN microresonators should therefore reach sensitivities well below 10^-19 WHz^(-1/2).

cond-mat.supr-con↗

arXiv2010

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$'s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $\approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8\times10^5$, while thicker SiN buffer layers led to reduced $Q_i$'s at low power.

cond-mat.supr-con↗

arXiv2009

Two-level system noise reduction for Microwave Kinetic Inductance Detectors

Noise performance is one of the most crucial aspects of any detector. Superconducting Microwave Kinetic Inductance Detectors (MKIDs) have an "excess" frequency noise that shows up as a small time dependent jitter of the resonance frequency characterized by the frequency noise power spectrum measured in units of Hz^2/Hz. Recent studies have shown that this noise almost certainly originates from a surface layer of two-level system (TLS) defects on the metallization or substrate. Fluctuation of these TLSs introduces noise in the resonator due to coupling of the TLS electric dipole moments to the resonator's electric field. Motivated by a semi-empirical quantitative theory of this noise mechanism, we have designed and tested new resonator geometries in which the high-field "capacitive" portion of the CPW resonator is replaced by an interdigitated capacitor (IDC) structure with 10 - 20 micron electrode spacing, as compared to the 2 micron spacing used for our more conventional CPW resonators. Measurements show that this new IDC design has dramatically lower TLS noise, currently by about a factor of ~29 in terms of the frequency noise power spectrum, corresponding to an improvement of about a factor of 29^(1/2) in NEP. These new devices are replacing the CPW resonators in our next design iteration in progress for MKIDCam. Opportunities and prospects for future reduction of the TLS noise will be discussed.

physics.ins-det↗

arXiv2008

A semi-empirical model for two-level system noise in superconducting microresonators

We present measurements of the low--temperature excess frequency noise of four niobium superconducting coplanar waveguide microresonators, with center strip widths $s_r$ ranging from 3 $μ$m to 20 $μ$m. For a fixed internal power, we find that the frequency noise decreases rapidly with increasing center strip width, scaling as $1/s_r^{1.6}$. We show that this geometrical scaling is readily explained by a simple semi-empirical model which assumes a surface distribution of independent two-level system fluctuators. These results allow the resonator geometry to be optimized for minimum noise.

cond-mat.supr-con↗

arXiv2008

Experimental evidence for a surface distribution of two-level systems in superconducting lithographed microwave resonators

We present measurements of the temperature-dependent frequency shift of five niobium superconducting coplanar waveguide microresonators with center strip widths ranging from 3 $μ$m to 50 $μ$m, taken at temperatures in the range 100-800 mK, far below the 9.2 K transition temperature of niobium. These data agree well with the two-level system (TLS) theory. Fits to this theory provide information on the number of TLS that interact with each resonator geometry. The geometrical scaling indicates a surface distribution of TLS, and the data are consistent with a TLS surface layer thickness of order a few nm, as might be expected for a native oxide layer.

cond-mat.supr-con↗

arXiv2008

Temperature Dependence of the Frequency and Noise of Superconducting Coplanar Waveguide Resonators

We present measurements of the temperature and power dependence of the resonance frequency and frequency noise of superconducting niobium thin-film coplanar waveguide resonators, carried out at temperatures well below the superconducting transition (T_{c}=9.2 K). The noise decreases by nearly two orders of magnitude as the temperature is increased from 120 to 1200 mK, while the variation of the resonance frequency with temperature over this range agrees well with the standard two-level system (TLS) model for amorphous dielectrics. These results support the hypothesis that TLS are responsible for the noise in superconducting microresonators, and have important implications for resonator applications such as qubits and photon detectors.

cond-mat.supr-con↗

arXiv2007

Noise Properties of Superconducting Coplanar Waveguide Microwave Resonators

We have measured noise in thin-film superconducting coplanar waveguide resonators. This noise appears entirely as phase noise, equivalent to a jitter of the resonance frequency. In contrast, amplitude fluctuations are not observed at the sensitivity of our measurement. The ratio between the noise power in the phase and amplitude directions is large, in excess of 30 dB. These results have important implications for resonant readouts of various devices such as detectors, amplifiers, and qubits. We suggest that the phase noise is due to two-level systems in dielectric materials.

cond-mat.supr-con↗