arXiv subjects

Jianting Dong

Publications and source records attributed to Jianting Dong.

16 recordsLinked to original sources

arXiv2026

Spin Hall Effect in Collinear Ferromagnets from Spin-Group Symmetry

Magnetic materials support both time-reversal-even (T-even) and time-reversal-odd (T-odd) spin Hall currents, yet their underlying microscopic origins remain elusive. Here, we elucidate the spin Hall effect (SHE) in collinear ferromagnets by treating spin-orbit coupling (SOC) as a perturbation that breaks spin-group symmetry, thereby revealing how magnetic order activates distinct spin Hall response. To first order in SOC, we identify two dominant T-even SHE mechanisms: a magnetization-independent conventional contribution and a magnetization-dependent channel associated with anomalous Hall charge transport. At the same order, the leading T-odd magnetic spin Hall effect (MSHE) originates from the exchange interaction between the conventional spin current and the local magnetization. At second order in SOC, we further uncover a distinct T-odd planar spin Hall mechanism. Our spin-symmetry analysis is corroborated by first-principles calculations, which reveal a pronounced anisotropic magnetic spin Hall effect whose magnitude can be comparable to the T-even spin Hall conductivity (SHC) when the magnetic moment is tilted away from the principal crystallographic axes. These findings clarify the microscopic origins of the SHC in collinear ferromagnets and pave the way for ferromagnet-based spin current sources with versatile properties in spintronic applications.

cond-mat.mes-hall↗

arXiv2026

Anomalous Transverse Response and Multi-Field Ferrialtermagnetic-Ferroelectric Valve with CrSb Flakes

Altermagnets combine the zero-stray-field of antiferromagnets with the spin polarization of ferromagnets, showing great potential for spintronic applications. Here, we propose ferrialtermagnetism as a distinct subclass of altermagnetic family, where symmetry-inequivalent altermagnetic sublattices possess nonidentical Neel vectors, preventing mutual cancellation of alternating spin splitting and conferring intrinsic robustness against perturbations. This concept is realized in the three-atomic-layer CrSb (110) flakes, which exhibits spin splitting of 344 meV, moderate uniaxial magnetic anisotropy, and high Neel temperature of 657 K. The magneto-optical Kerr and the anomalous Hall effects are observed. Integrating this ferrialtermagnetic CrSb with ferroelectric Sc2CO2 and Cu spacer, we design an ferrialtermagnetic-ferroelectric valve. This device displays equilibrium tunneling magnetoresistance and electroresistance of ~10^3%, and non-equilibrium magnitudes under bias, thermal, or light field reaches ~10^4% with high spin filtering of 90%. The negative differential resistance and photogalvanic effects, and photocurrent extinction ratio of 283.8 are achieved. These findings establish ferrialtermagnetism as a fertile platform for multi-field-controlled, ultracompact, and self-powered spintronics and electronics.

cond-mat.mtrl-sci↗

arXiv2026

Electric field switching of altermagnetic spin-splitting in multiferroic skyrmions

Magnetic skyrmions are localized magnetic structures that retain their shape and stability over time, thanks to their topological nature. Recent theoretical and experimental progress has laid the groundwork for understanding magnetic skyrmions characterized by negligible net magnetization and ultrafast dynamics. Notably, skyrmions emerging in materials with altermagnetism, a novel magnetic phase featuring lifted Kramers degeneracy-have remained unreported until now. In this study, we demonstrate that BiFeO3, a multiferroic renowned for its strong coupling between ferroelectricity and magnetism, can transit from a spin cycloid to a Neel-type skyrmion under antidamping spin-orbit torque at room temperature. Strikingly, the altermagnetic spin splitting within BiFeO3 skyrmion can be reversed through the application of an electric field, revealed via the Circular photogalvanic effect. This quasiparticle, which possesses a neutral topological charge, holds substantial promise for diverse applications-most notably, enabling the development of unconventional computing systems with low power consumption and magnetoelectric controllability.

cond-mat.mtrl-sci↗

arXiv2025

Ultrahigh Charge-to-Spin Conversion and Tunneling Magnetoresistance in Quasi-Two-Dimensional d-wave Altermagnet

The emergence of altermagnets has driven groundbreaking advances in spintronics. Notably, d-wave altermagnets support non-relativistic spin transport, efficient charge-to-spin conversion, and T-odd spin currents. In addition, their integration as electrodes in antiferromagnetic tunnel junctions (AFMTJs) enables a tunneling magnetoresistance (TMR) effect, allowing electrical detection of N\'eel vectors for next-generation memory devices. In this work, we investigate the non-relativistic spin transport properties of the quasi-two-dimensional (quasi-2D) d-wave altermagnet KV\textsubscript{2}Se\textsubscript{2}O and the TMR effect in KV\textsubscript{2}Se\textsubscript{2}O-based AFMTJs via first-principles calculations. Our results reveal that KV\textsubscript{2}Se\textsubscript{2}O exhibits a non-relativistic longitudinal spin polarization and a spin Hall angle both exceeding 60\% at room temperature, while KV\textsubscript{2}Se\textsubscript{2}O-based AFMTJs achieve a giant TMR reaching approximately $10^{12}$\%, which remains robust against Fermi level shifts. These findings highlight the anisotropic spin polarization inherent to d-wave staggered magnetism and underscore the critical role of Fermi surface topology in enhancing T-odd spin transport and the TMR effect in AFMTJs.

cond-mat.mtrl-sci↗

arXiv2025

Spin-orbit torques in bulk collinear antiferromagnets:complete classifications and the induced spin dynamics

Electric field induced spin-orbit torques are the crucial mechanism for electric regulations of antiferromagnetic order. However, the spin-orbit torques in antiferromagnets and the induced spin dynamics remain largely unexplored. In this work, the full classifications of SOTs in bulk collinear AFMs have been achieved based on magnetic point group. Dependent on the symmetries connecting the opposite spin sublattices, the SOTs are classified into six distinct types. Among them, the SOTs and the induced Neel vector dynamics in three representative AFMs have been investigated, where the spin sublattices are connected by fractional translation, spatial inversion, and neither by translation nor inversion symmetry respectively. The SOTs on spin sublattices have been calculated by first-principles calculations based on Kubo linear response theory, and then the induced spin dynamics are simulated by LLG equations. In typical PT symmetric AFM and the inversion symmetry breaking altermagnet, the simulations indicate that the deterministic switching of Neel vectors can be driven by field like torques. What's more, the fully electric writing of multiple antiferromagnetic domains into single domain state with preset Neel vector direction and 180 deterministic switching may also be realized. Our work may shed light on the current control of antiferromagnetic orders in collinear AFMs. Especially, for inversion symmetry breaking altermagnet, the electric writing and reading of Neel vector are highly desirable for antiferromagnetic memory applications.

cond-mat.mtrl-sci↗

arXiv2025

Longitudinal transport spin polarization of spin degenerate antiferromagnets

A vital goal in spintronics is the efficient electrical generation of spin currents, a pursuit that has recently focused on using antiferromagnets (AFMs) as spin current sources. It has been demonstrated that antiferromagnets with broken PT symmetry (parity + time reversal) can efficiently generate longitudinal and transverse spin currents. At the same time, it has been generally thought that antiferromagnets with PT symmetry (PT-AFMs) forbid the longitudinal spin polarization due to their spin-degenerate band structure. Here, in contrast to this common expectation, we show, using theoretical analysis based on magnetic point group symmetry, that most PT-AFMs can generate longitudinal spin currents due to spin-orbit coupling. Using density-functional theory, we calculate the longitudinal spin conductivity of representative PT-AFMs, L10-MnPt and Mn2Au, and show that its magnitude is comparable to that of their PT-broken counterparts. Our symmetry-enabled classification of antiferromagnets and theoretical results for the longitudinal spin conductivity in representative PT-AFMs expands our understanding of spin transport and shows the possibility of robust spin-current generation in a broad range of spin-degenerate antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Inefficiency of orbital Hall effect on the spin torque in transition metal/ferromagnet bilayers

Current induced spin torque is essential and crucial in spintronics. In this work, we systematically investigate the spin torque in transition metal(TM)/ferromagnet(FM) bilayers by using first-principles calculations and taking into account the phonon scattering at room temperature. To examine the spin and orbital Hall contribution, the studied transition metals include 5d heavy metals Pt, W, Au as well as 3d light metals Ti, V, Cr, Cu etc. We found that in TM/CoFe bilayers with typical 3d and 5d transition metals, the spin torque on CoFe mainly originates from spin Hall mechanism with the magnitude and sign of damping like torque efficiency consistent with the spin Hall conductivity. In TM/Ni bilayers, the spin torque is contributed by three mechanisms including spin and orbital Hall current in TM, as well as self-torque in Ni. The orbital Hall contribution in TM is accompanied by noteworthy opposite self spin torque in Ni, which leads to inapparent torque efficiency in Ti/Ni and V/Ni bilayers. For TM(5d heavy metal)/Ni bilayers, the spin torque induced by orbital Hall and self-torque in Ni nearly cancel each other, which makes the spin torque on Ni still align with that of the spin Hall effect in TM. Our work reveals much less efficient contribution of orbital Hall than spin Hall effect on the spin torque in transition metal/ferromagnet bilayers.

cond-mat.mtrl-sci↗

arXiv2025

Nonrelativistic spin-splitting multiferroic antiferromagnet and compensated ferrimagnet with zero net magnetization

Spin-splitting antiferromagnets with spin-polarized band structures in momentum space have garnered intensive research attention due to their zero net magnetic moments, ultras fast spin dynamics as conventional antiferromagnets, and spin-polarized transport properties akin to ferromagnets, making them promising candidates for antiferromagnetic spintronics. However, unlike spin-torque switching of ferromagnets by electric current, efficient electric control of spin-splitting antiferromagnetic order remains challenges. In this work, we identify prototypes of multiferroic spin-splitting antiferromagnets, including BiFeO3, Fe2Mo3O8 and compensated ferrimagnet GaFeO3 with ferroelectric polarization as well as spin-polarized electronic structures. We establish design principles for the spin-splitting multiferroic antiferromagnets and compensated ferrimagnets, elucidating the band symmetry features in Brillouin zone. We demonstrate that the spin polarization in spin-splitting magnets, despite of zero net magnetic moment, can be switched by ferroelectric polarization, providing an efficient means of controlling the antiferromagnetic order. Our work may inspire future development of novel multiferroic functional magnets with zero magnetic moments and pave the way for their applications in magnetoelectric spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Spin Hall effect in 3d ferromagnetic metals for field-free switching of perpendicular magnetization: A first-principles investigation

Ferromagnetic metals, with the potential to generate spin current with unconventional spin polarization via the spin Hall effect, offer promising opportunities for field-free switching of perpendicular magnetization and for the spin-orbit torque devices. In this study, we investigate two distinct spin Hall mechanisms in 3d ferromagnetic metals including spin-orbit coupling driven spin Hall effect in Fe, Co, Ni and their alloys, and non-relativistic spin Hall effect arising from anisotropic spin-polarized transport by taking L10-MnAl as an example. By employing first-principles calculations, we examine the temperature and alloy composition dependence of spin Hall conductivity in Fe, Co, Ni and their alloys. Our results reveal that the spin Hall conductivities with out-of-plane spin polarization in 3d ferromagnetic metals are at the order of 1000 \frac{\hbar}{2e} \left( \Omega \, \text{cm} \right)^{-1} at 300 K, but with a relatively low spin Hall angles around 0.01~0.02 due to the large longitudinal conductivity. For L10-MnAl(101), the non-relativistic spin Hall conductivity can reach up to 10000\frac{\hbar}{2e} \left( \Omega \, \text{cm} \right)^{-1}, with a giant spin Hall angle around 0.25 at room temperature. By analyzing the magnetization switching process, we demonstrate deterministic switching of perpendicular magnetization without an external magnetic field by using 3d ferromagnetic metals as spin current sources. Our work may provide an unambiguous understanding on spin Hall effect in ferromagnetic metals and pave the way for their potential applications in related spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Magnetostriction, piezomagnetism and domain nucleation in a kagome antiferromagnet

Whenever the elastic energy of a solid depends on magnetic field, there is a magnetostrictive response. Field-linear magnetostriction implies piezomagnetism and vice versa. Here, we show that Mn$_3$Sn, a non-collinear antiferromanget with Weyl nodes, hosts a large and almost perfectly linear magnetostriction even at room temperature. The longitudinal and transverse magnetostriction, with opposite signs and similar amplitude are restricted to the kagome planes and the out-of-plane response is negligibly small. By studying four different samples with different Mn:Sn ratios, we find a clear correlation between the linear magnetostriction, the spontaneous magnetization and the concentration of Sn vacancies. The recently reported piezomagnetic data fits in our picture. We show that linear magnetostriction and piezomagnetism are both driven by the field-induced in-plane twist of spins. A quantitative account of the experimental data requires the distortion of the spin texture by Sn vacancies. We find that the field-induced domain nucleation within the hysteresis loop corresponds to a phase transition. Within the hysteresis loop, a concomitant mesoscopic modulation of local strain and spin twist angles, leading to twisto-magnetic stripes, arises as a result of the competition between elastic and magnetic energies.

cond-mat.str-el↗

arXiv2024

Crystal facet orientation and temperature dependence of charge and spin Hall effects in noncollinear antiferromagnet: A first-principles investigation

Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we comprehensively investigate the charge and spin Hall effects in representative noncollinear antiferromagnet Mn3Pt. Our study reveals that the Hall effects in nc-AFMs are critically dependent on the crystal facet orientation and temperature. For (001) orientated Mn3Pt, each charge and spin Hall conductivity element is comprised of both time reversal odd (T-odd) and even (T-even) contribution, associated with longitudinal conductivity, which leads to sizable and highly anisotropic Hall conductivity. The temperature dependence of charge and spin Hall conductivity has been elucidated by considering both phonon and spin disorder scattering. The scaling relations between Hall conductivity and longitudinal conductivity have also been investigated. The existence of prominent spin Hall effect in nc-AFMs may generate spin current with Sz spin polarization, which is advantageous for field free switching of perpendicular magnetization. Our work may provide unambiguous understanding on the charge and spin transport in noncollinear antiferromagnets and pave their way for applications in antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Anatomy of spin Hall effect in ferromagnetic metals

The spin Hall effect in nonmagnetic materials has been intensively studied and became one of the most crucial spin-charge conversion mechanism in spintronics. However, the spin Hall effect in ferromagnetic metals has been less investigated and remains unclear. In this work, we investigate the spin Hall effect in representative ferromagnetic alloy by using first-principles calculations. We first clarify the spin Hall effect into three different types including conventional (CSHE), spin anomalous (SAHE) and magnetic spin Hall effect (MSHE) and then calculate the corresponding spin Hall conductivity and spin Hall angle for (Fe, Co, Ni)Pt, NiFe and CoFe alloy. We find the above three spin Hall mechanisms do coexist in ferromagnetic metals. Particularly, for Pt-based ferromagnetic alloy, a sizable conventional and magnetic spin Hall angles comparable to that of Pt have been predicted. The remarkable unconventional spin Hall effect in ferromagnetic metal may enrich the spin-charge conversion phenomena. For instance, the spin current generated by remarkable MSHE with out-of-plane spin-polarization should be helpful for field-free switching of perpendicular magnetization through spin-orbit torque effect. This work may stimulate future studies on the spin Hall effect in ferromagnetic metals and pave their promising applications for spin-charge conversion devices in spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB system with an orthogonally-magnetized configuration. Through the thickness modulation of the MgO barrier, the negative TMR component can be enhanced up to 20% under a negative voltage bias. Moreover, the tunnel anisotropic magneto-resistance measurements unveil that the negative TMR component likely arises from the interfacial resonance states (IRS) in the minority band of the bottom ferromagnetic layer. Complementary first principle calculations further quantify the IRS location and strength with respect to the Fermi level position. Our work not only confirm the vital role of IRS in the electrical transport of MTJ, but also provide valuable insights for the design of new-generation voltage-controlled MRAM and related spintronic applications.

physics.app-ph↗

arXiv2022

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces

Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations based on density functional theory, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn3Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four non-volatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other non-collinear AFM metals like Mn3Ge, Mn3Ga, Mn3Pt, and Mn3GaN. Our work provides a robust method for detecting the Néel vector in non-collinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Ferroelectric control of Néel vector in L10 type of antiferromagnetic films

How to efficiently manipulate the Néel vector of antiferromagnets (AFM) by electric methods is one of the major focuses in current antiferromagnetic spintronics. In this work, we investigated the ferroelectric control of magnetism in AFM L10-MnPt/BaTiO3 bilayers structures by using first-principles calculation. We studied the effect of ferroelectric polarization reversal on magnetic crystalline anisotropy (MCA) of L10-MnPt films with different interface structures. Our results predict a large perpendicular MCA in L10-MnPt films with Pt-O interface, while an in-plane MCA with Mn-O interface when they are interfaced with ferroelectric BaTiO3. In addition, the magnitude of MCA for both interfaces can be modulated efficiently by the polarization reversal of BaTiO3. The ferroelectric control of MCA has been analyzed based on second order perturbation theory, and it can be mainly attributed to the ferroelectric polarization driven redistribution of Pt-5d orbital occupation around Fermi energy. Especially, for Mn-O interface, the Néel vector can be switched between in-plane [100] and [110] directions, or even from in-plane to out-of-plane at certain film thickness by reversing ferroelectric polarization. Our results may provide a non-volatile concept for ferroelectric control of Néel vector in L10-antiferromagnets, which could stimulate experimental investigations on magnetoelectric effect of antiferromagnets and promote its applications in low-power consumption spintronic memory devices.

cond-mat.mtrl-sci↗