arXiv subjects

Jianwen Ma

Publications and source records attributed to Jianwen Ma.

5 recordsLinked to original sources

arXiv2026

Giant bulk photovoltaic effect driven by interfacial symmetry breaking in MoS2/Ta2NiSe5 heterostructures

Van der Waals (vdW) heterostructures offer a versatile platform for engineering unconventional bulk photovoltaic (BPV) effect through interfacial symmetry breaking. However, the coexistence of multiple photophysical mechanisms, driven by structural complexity, spontaneous charge transfer, and strong interlayer coupling, often obscures the microscopic origin of the BPV response and hinders its rational optimization. Here, we demonstrate a pronounced BPV effect localized at the overlap region of a cross-bar MoS2/Ta2NiSe5 vdW heterostructure, where symmetry breaking induced by vertical stacking lifts the inversion center of MoS2. The orthogonal device geometry enables the independent probing of intralayer and interfacial photoresponse pathways, facilitating clear separation of competing mechanisms. Spontaneous interfacial charge transfer between MoS2 and Ta2NiSe5 further establishes a strong interlayer electronic coupling. By modulating the interlayer potential landscape through gate voltage and vertical electric fields, we achieve an optimized zero-bias photocurrent density of 247 A/cm2 and a BPV coefficient of 0.99 V-1. Supported by theoretical modelling, our results illustrate how minimalist device geometry can transform complex heterostructures into experimentally tractable platforms. This strategy paves the way for analyzing and optimizing interface-driven BPV effect, with implications for self-powered optoelectronics, broadband photodetection, and energy-harvesting nanodevices.

cond-mat.mes-hall↗

arXiv2024

Acousto-drag photovoltaic effect by piezoelectric integration of two-dimensional semiconductors

Light-to-electricity conversion is crucial for energy harvesting and photodetection, requesting efficient electron-hole pair separation to prevent recombination. Traditional junction-based mechanisms using built-in electric fields fail in non-barrier regions. Homogeneous material harvesting under photovoltaic effect is appealing but only realized in non-centrosymmetric systems via bulk photovoltaic effect. Here we report the realization of photovoltaic effect by employing surface acoustic waves (SAW) to generate zero-bias photocurrent in a conventional layered semiconductor MoSe2. SAW induces periodic modulation to electronic bands and drags the photoexcited pairs toward the travelling direction. The photocurrent is extracted by a local barrier. The separation of generation and extraction processes suppresses recombination and yields large nonlocal photoresponse. We distinguish acousto-electric drag and electron-hole pair separation effect by fabricating devices of different configurations. The acousto-drag photovoltaic effect, enabled by piezoelectric integration, offers an efficient light-to-electricity conversion method, independent of semiconductor crystal symmetry.

cond-mat.mes-hall↗

arXiv2024

Memristive switching in the surface of a charge-density-wave topological semimetal

Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2

EuCd2As2 was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped EuCd2As2 crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here we present a comprehensive magneto-transport study of high-quality EuCd2As2 crystals with ultralow bulk carrier density (10^13 cm-3). In contrast to the general expectation of a Weyl semimetal phase, EuCd2As2 shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band bending. Moreover, the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude, and induce a periodic resistance oscillation due to the geometric resonance. Such nonlinear transport results from the highly nonequilibrium state induced by electrical field near the band edge. Our results suggest an insulating phase in EuCd2As2 and put a strong constraint on the underlying mechanism of anomalous transport properties in this system.

cond-mat.mes-hall↗

arXiv2023

Giant superlinear power dependence of photocurrent based on layered Ta$_2$NiS$_5$ photodetector

Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. Here, we report the giant superlinear power dependence of photocurrent based on multi-layer Ta$_2$NiS$_5$. While the fabricated photodetector exhibits good sensitivity ($3.1 mS/W$ per square) and fast photoresponse ($31 μ$$s$), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from $1.5 μ$W/$μ$$m^{2}$ to $200 μ$W/$μ$$m^{2}$, the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, a prominent superlinearity is observed with a giant power exponent of $γ=1.5$. The unusual photoresponse can be explained by a two-recombination-center model where the distinct density of states of the recombination centers effectively closes all recombination channels. The fabricated photodetector is integrated into camera for taking photos with enhanced contrast due to the superlinearity. Our work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

physics.app-ph↗