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Jiawen You

Publications and source records attributed to Jiawen You.

3 recordsLinked to original sources

Phase amplification microscopy with femtometer-level accuracy

We demonstrate a major breakthrough in laser interferometry and microscopy achieving femtometer-level measurement accuracy and beyond, termed Phase Amplification microscopy (Φ-Amp). By exploiting the native silicide substrate as a phase cavity, our phase-gain theory predicts that weak sub-atomic phase signals can be magnified over 1000-fold, thus bypassing the shot-noise limit. We experimentally achieved a 158.2-fold phase gain for graphene in ambient air, corresponding ~ 730 femtometer accuracy. To fully unleash the potential of Φ-Amp for atomic fabrication and quantum measurement, we quantified interlayer spacing differences between AB-stacked and 30-degree-twisted bilayer graphene to be ~ 0.77 Angstroms and further detected atomic impurities and defects on large atomic structures. As the first wide-field metrology tool, we envision Φ-Amp may accelerate the scaling up of atomic quantum devices.

physics.optics

Emergent Moiré fringes in direct-grown quasicrystal

Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple graphene layers, using chemical vapor deposition (CVD). Strikingly, we observed periodic Moiré patterns in the quasicrystal, a finding that has not been previously reported in traditional alloy-based quasicrystals. The Moiré periodicity, varying with the parity of the constituent layers, aligns with the theoretical predictions that suggest a stress cancellation mechanism in force. The emergence of Moiré fringes is attributed to the spontaneous mismatched lattice constant in the oriented graphene layers, proving the existence of atomic relaxation. This phenomenon, which has been largely understudied in graphene systems with large twist angles, has now been validated through our use of scanning transmission electron microscopy (STEM). Our CVD-grown Moiré quasicrystal provides an ideal platform for exploring the unusual physical properties that arise from Moiré periodicity within quasicrystals.

cond-mat.mtrl-sci

Quantum emitter formation in carbon-doped monolayer hexagonal boron nitride

Single photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single photon emitters in hBN originate from carbon-related defects. Here we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4 fold for B-C bonds and 1.6 fold for N-C bonds. For the same samples we observe an increase in SPE density from 0.13 to 0.30 emitters/um2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced 2D quantum state engineering.

cond-mat.mtrl-sci