arXiv subjects

Jie Lian

Publications and source records attributed to Jie Lian.

22 records · Page 2Linked to original sources

arXiv2018

Comparison of DCO-OFDM and M-PAM for LED-Based Communication Systems

Light-emitting diode (LED)-based communications, such as visible light communications (VLC) and infrared (IR) communications, are candidate techniques to provide short-range and high-speed data transmission. In this paper, M-ary pulse amplitude modulation (M-PAM), used as a high bandwidth efficiency scheme, is compared with an optimized DC-biased optical orthogonal frequency division multiplexing (DCO-OFDM) scheme. Considering the bandwidth limit and constrained peak transmitted power characteristics of LEDs, a bit loading algorithm with an optimized modulation index is used for the DCO-OFDM. To reduce the inter-symbol interference caused by LEDs, a waveform design algorithm with a minimum mean squared error (MMSE) equalizer is applied to the M-PAM system. From numerical results, M-PAM with the optimized signal processing can provide a substantially higher data rate than the optimally designed DCO-OFDM for the same performance.

cs.IT↗

arXiv2015

Two-Dimensional Van der Waals Epitaxy Kinetics in a Three-Dimensional Perovskite Halide

The exploration of emerging materials physics and prospective applications of two-dimensional materials greatly relies on the growth control of their thickness, phases, morphologies and film-substrate interactions. Though substantial progresses have been made for the development of two-dimensional films from conventional layered bulky materials, particular challenges remain on obtaining ultrathin, single crystalline, dislocation-free films from intrinsically non-Van der Waals-type three-dimensional materials. In this report, with the successful demonstration of single crystalline ultrathin large scale perovskite halide material, we reveal and identify the favorable role of weak Van der Waals film-substrate interaction on the nucleation and growth of the two-dimensional morphology out of non-layered materials compared to conventional epitaxy. We also show how the bonding nature of the three-dimensional material itself affects the kinetic energy landscape of ultrathin films growth. By studying the formation of fractal perovskites assisted with Monte Carlo simulations, we demonstrate that the competition between the Van der Waals diffusion and surface free energy of the perovskite leads to film thickening, suggesting extra strategies such as surface passivation may be needed for the growth of monolayer and a few layers films.

cond-mat.mtrl-sci↗

arXiv2010

Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.

cond-mat.mtrl-sci↗

arXiv2008

Graphene Segregated on Ni surfaces and Transferred to Insulators

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality.

cond-mat.mtrl-sci↗