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Jie Sun

Publications and source records attributed to Jie Sun.

170 records · Page 10Linked to original sources
arXiv2008

Sequence Nets

We study a new class of networks, generated by sequences of letters taken from a finite alphabet consisting of $m$ letters (corresponding to $m$ types of nodes) and a fixed set of connectivity rules. Recently, it was shown how a binary alphabet might generate threshold nets in a similar fashion [Hagberg et al., Phys. Rev. E 74, 056116 (2006)]. Just like threshold nets, sequence nets in general possess a modular structure reminiscent of everyday life nets, and are easy to handle analytically (i.e., calculate degree distribution, shortest paths, betweenness centrality, etc.). Exploiting symmetry, we make a full classification of two- and three-letter sequence nets, discovering two new classes of two-letter sequence nets. The new sequence nets retain many of the desirable analytical properties of threshold nets while yielding richer possibilities for the modeling of everyday life complex networks more faithfully.

cond-mat.dis-nn↗
arXiv2007

Graph Compression -- Save Information by Exploiting Redundancy

In this paper we raise the question of how to compress sparse graphs. By introducing the idea of redundancy, we find a way to measure the overlap of neighbors between nodes in networks. We exploit symmetry and information by making use of the overlap in neighbors and analyzing how information is reduced by shrinking the network and using the specific data structure we created, we generalize the problem of compression as an optimization problem on the possible choices of orbits. To find a reasonably good solution to this problem we use a greedy algorithm to determine the orbit of symmetry identifications, to achieve compression. Some example implementations of our algorithm are illustrated and analyzed.

cond-mat.stat-mech↗
arXiv2007

Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect.

cond-mat.mes-hall↗
arXiv2007

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.

cond-mat.mes-hall↗
arXiv2007

Research progress of electronic properties of self-assembled semiconductor quantum dots

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of that material and an analysis of problems and perspectives.

cond-mat.mes-hall↗
arXiv2007

Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

cond-mat.mtrl-sci↗
arXiv2006

Evolving Network With Different Edges

We proposed an evolving network model constituted by the same nodes but different edges. The competition between nodes and different links were introduced. Scale free properties have been found in this model by continuum theory. Different network topologies can be generated by some tunable parameters. Simulation results consolidate the prediction.

cond-mat.stat-mech↗