arXiv subjects

Jihoon Keum

Publications and source records attributed to Jihoon Keum.

6 recordsLinked to original sources

arXiv2026

Interfacial chirality-induced magnetic-field-free switching with high energy efficiency in all-vdW heterostructures

Chirality, a central concept across many scientific disciplines, continues to inspire the discovery of novel physical phenomena. In condensed matter physics, structural chirality - defined by the absence of mirror plane symmetries - has primarily been explored in bulk materials. However, new chiral phenomena can emerge uniquely at the interface, distinct from their bulk counterparts, when a chiral material forms a heterostructure. Here, we demonstrate that all van-der-Waals (vdW) heterostructure composed of the chiral Co1/3TaS2 and the achiral vdW ferromagnet Fe3GeTe2 exhibits two distinct and unconventional spin-orbit torques originating from the interfacial chirality. These torques enable magnetic-field-free switching of perpendicular magnetization with ultralow current density ~ 10^6 A/cm^2 and minimal power dissipation < 10^15 W/m^3. Moreover, by replacing Fe3GeTe2 with a similar vdW ferromagnet, Fe3GaTe2, but of higher Curie temperature, we achieved the magnetic-field-free switching at room temperature in the Fe3GaTe2/Co1/3TaS2 vdW heterostructure. Our findings establish interfacial chirality as a powerful new handle for spintronic control, opening a new pathway to explore chirality-induced phenomena beyond the bulk symmetry constraints - and paving the way toward highly efficient, low-power spintronic devices based on all-vdW heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

AC magnetometry of van der Waals magnets using ultrasensitive Graphene Hall sensors

Probing the dynamical magnetic properties of two-dimensional (2D) materials requires sensitive techniques capable of detecting small magnetic fields from nanoscale samples. We demonstrate quantitative AC and DC magnetometry of a ferromagnetic Fe3-xGeTe2 nanoflakes using ultrasensitive graphene Hall sensors. These devices achieve record-low magnetic field detection noise at both cryogenic and room temperature, enabled by hBN encapsulation, low-resistance fluorographene contacts, and a novel fabrication process. We perform quantitative AC susceptibility measurements up to 1 kHz, resolving both real and imaginary components with nanotesla-scale sensitivity and milliradian phase accuracy, the first such measurement in a van der Waals magnet. Our results establish graphene Hall sensors as a powerful and broadly applicable platform for studying magnetic and superconducting phases near the 2D limit.

cond-mat.mtrl-sci↗

arXiv2025

Current-driven collective control of helical spin texture in van der Waals antiferromagnet

Electrical control of quantum magnetic states is essential in spintronic science. Initial studies on the ferromagnetic state control were extended to collinear antiferromagnets and, more recently, noncollinear antiferromagnets. However, electrical control mechanisms of such exotic magnetic states remain poorly understood. Here, we report the first experimental and theoretical example of the current control of helical antiferromagnets, arising from the competition between collinear antiferromagnetic exchange and interlayer Dzyaloshinskii-Moriya interaction in new van-der-Waals (vdW) material Ni1/3NbS2. Due to the intrinsic broken inversion symmetry, an in-plane current generates spin-orbit torque that, in turn, interacts directly with the helical antiferromagnetic order. Our theoretical analyses indicate that a weak ferromagnetic order coexists due to the Dzyaloshinskii-Moriya interaction, mediating the spin-orbit torque to collectively rotate the helical antiferromagnetic order. Our Ni1/3NbS2 nanodevice experiments produce current-dependent resistance change consistent with the theoretical prediction. This work widens our understanding of the electrical control of helical antiferromagnets and promotes vdW quantum magnets as interesting material platforms for electrical control.

cond-mat.mtrl-sci↗

arXiv2025

Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure

Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, we demonstrate a new approach for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe3GeTe2/SrTiO3 heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane initialization magnetic fields with clear hysteresis. We successfully combined van-der-Waals magnet and oxide for the first time, especially taking advantage of spin-orbit torque on the SrTiO3 oxide. This allows us to establish a new way of magnetic field-free switching. Our work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van-der-Waals magnets and oxide spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Broken inversion symmetry in van der Waals topological ferromagnetic metal iron germanium telluride

Inversion symmetry breaking is critical for many quantum effects and fundamental for spin-orbit torque, which is crucial for next-generation spintronics. Recently, a novel type of gigantic intrinsic spin-orbit torque has been established in the topological van-der-Waals (vdW) magnet iron germanium telluride. However, it remains a puzzle because no clear evidence exists for interlayer inversion symmetry breaking. Here, we report the definitive evidence of broken inversion symmetry in iron germanium telluride directly measured by the second harmonic generation (SHG) technique. Our data show that the crystal symmetry reduces from centrosymmetric P63/mmc to noncentrosymmetric polar P3m1 space group, giving the three-fold SHG pattern with dominant out-of-plane polarization. Additionally, the SHG response evolves from an isotropic pattern to a sharp three-fold symmetry upon increasing Fe deficiency, mainly due to the transition from random defects to ordered Fe vacancies. Such SHG response is robust against temperature, ensuring unaltered crystalline symmetries above and below the ferromagnetic transition temperature. These findings add crucial new information to our understanding of this interesting vdW metal, iron germanium telluride: band topology, intrinsic spin-orbit torque and topological vdW polar metal states.

cond-mat.mtrl-sci↗

arXiv2025

Unexpected versatile electrical transport behaviors of ferromagnetic nickel films

Perpendicular magnetic anisotropy (PMA) of magnets is paramount for electrically controlled spintronics due to their intrinsic potentials for higher memory density, scalability, thermal stability and endurance, surpassing an in-plane magnetic anisotropy (IMA). Nickel film is a long-lived fundamental element ferromagnet, yet its electrical transport behavior associated with magnetism has not been comprehensively studied, hindering corresponding spintronic applications exploiting nickel-based compounds. Here, we systematically investigate the highly versatile magnetism and corresponding transport behavior of nickel films. As the thickness reduces within the general thickness regime of a magnet layer for a memory device, the hardness of nickel films' ferromagnetic loop of anomalous Hall effect increases and then decreases, reflecting the magnetic transitions from IMA to PMA and back to IMA. Additionally, the square ferromagnetic loop changes from a hard to a soft one at rising temperatures, indicating a shift from PMA to IMA. Furthermore, we observe a butterfly magnetoresistance resulting from the anisotropic magnetoresistance effect, which evolves in conjunction with the thickness and temperature-dependent magnetic transformations as a complementary support. Our findings unveil the rich magnetic dynamics and most importantly settle down the most useful guiding information for current-driven spintronic applications based on nickel film: The hysteresis loop is squarest for the ~8 nm-thick nickel film, of highest hardness with Rxyr/Rxys~1 and minimum Hs-Hc, up to 125 K; otherwise, extra care should be taken for a different thickness or at a higher temperature.

cond-mat.mtrl-sci↗