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Jin Gyu Park

Publications and source records attributed to Jin Gyu Park.

3 recordsLinked to original sources

Detecting Carbon Nanotube Orientation with Topological Data Analysis of Scanning Electron Micrographs

As the aerospace industry becomes increasingly demanding for stronger lightweight materials, the ultra-strong carbon nanotube (CNT) composites with highly aligned CNT network structures could be the answer. In this work, a novel methodology applying topological data analysis (TDA) to the scanning electron microscope (SEM) images was developed to detect CNT orientation. The CNT bundle extensions in certain directions were summarized algebraically and expressed as visible barcodes. The barcodes were then calculated and converted into the total spread function $V(X,θ)$, from which the alignment fraction and the preferred direction could be determined. For validation purposes, the random CNT sheets were mechanically stretched at various strain ratios ranging from $0-40\%$, and quantitative TDA analysis was conducted based on the SEM images taken at random positions. The results showed high consistency ($R^2=0.975$) compared to the Herman's orientation factors derived from the polarized Raman spectroscopy and wide-angle X-ray scattering analysis. Additionally, the TDA method presented great robustness with varying SEM acceleration voltages and magnifications, which might alter the scope in alignment detection. With potential applications in nanofiber systems, this study offers a rapid and simple way to quantify CNT alignment, which plays a crucial role in transferring the CNT properties into engineering products.

cond-mat.mtrl-sci↗

Tensor Mixed Effects Model with Applications in Nanomanufacturing Inspection

Raman mapping technique has been used to perform in-line quality inspections of nanomanufacturing processes. In such an application, massive high-dimensional Raman mapping data with mixed effects is generated. In general, fixed effects and random effects in the multi-array Raman data are associated with different quality characteristics such as fabrication consistency, uniformity, defects, et al. The existing tensor decomposition methods cannot separate mixed effects, and existing mixed effects model can only handle matrix data but not high-dimensional multi-array data. In this paper, we propose a tensor mixed effects (TME) model to analyze massive high-dimensional Raman mapping data with complex structure. The proposed TME model can (i) separate fixed effects and random effects in a tensor domain; (ii) explore the correlations along different dimensions; and (iii) realize efficient parameter estimation by a proposed iterative double Flip-Flop algorithm. We also investigate the properties of the TME model, existence and identifiability of parameter estimation. The numerical analysis demonstrates the efficiency and accuracy of the parameter estimation in the TME model. Convergence and asymptotic properties are discussed in the simulation and surrogate data analysis. The case study shows an application of the TME model in quantifying the influence of alignment on carbon nanotubes buckypaper. Moreover, the TME model can be applied to provide potential solutions for a family of tensor data analytics problems with mixed effects.

stat.ME↗

Functionalized pentacene field-effect transistors with logic circuit applications

Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature and light power. The field-effect mobility ($μ$$_{\rm FET}$) has a gate-voltage dependent activation energy. A non-monotonic temperature dependence was observed at high gate voltage (V$_G$ $<$ -30 V) with activation energy E$_a$ $\sim$ 60 - 170 meV,depending on the fabrication procedure. The gate-voltage dependent mobility and non-monotonic temperature dependence indicates that shallow traps play important role in the transport of TIPS-pentacene films. The current in the saturation regime as well as mobility increase upon light illumination and is proportional to the light intensity, mainly due to the photoconductive response. Transistors with submicron channel length showed unsaturating current-voltage characteristics due to the short channel effect. Realization of simple circuits such as NOT(inverter), NOR, and NAND logic gates are demonstrated for thin film TIPS-pentacene transistors.

cond-mat.str-el↗