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Jin Zou

Publications and source records attributed to Jin Zou.

15 recordsLinked to original sources

N\'eel-Vector-Orientation Induced Direction-Robust Spin Filtering in Two-Dimensional Altermagnets

Whether an antiferromagnet can host direction-robust spin-polarized transport without a conventional spin-selective band gap remains a central challenge in antiferromagnetic spintronics. Here we establish a gapless, direction-robust spin-filtering mechanism in a compensated two-dimensional altermagnetic Weyl semimetal that requires neither a spin-selective band gap nor a large velocity contrast between spin projections. Using Janus monolayer Ta$_2$TeSeO as a realistic platform, we combine symmetry analysis with first-principles calculations, full-Brillouin-zone Wannier interpolation, and semiclassical transport. Rotating the N\'eel vector removes a unitary-mirror constraint and shifts one Weyl-cone pair away from its parent high-symmetry line. For an in-plane N\'eel vector, the residual $C_{2z}\mathcal T$ symmetry forbids the independent $\sigma_y$ mass that would open a local gap, allowing the reconstructed cones to shift in momentum while remaining gapless. Breaking unitary $C_{2z}$ simultaneously lifts the energy equivalence of the remaining mirror-pinned Weyl cones. The resulting coexistence of a metallic spin-projected manifold and a low-DOS Weyl-derived manifold produces a predominantly DOS-driven conductance imbalance. At charge neutrality and 20~K, the longitudinal conductivity polarization for $\mathbf n\parallel x$ remains positive for every in-plane current direction and ranges from $76.4\%$ to $82.0\%$. The degenerate in-plane magnetic anisotropy facilitates reversible switching between symmetry-related spin-filtering states using strain or weak anisotropic fields. This N\'eel-vector-driven symmetry mechanism provides a general route to direction-robust gapless spin filtering in compensated altermagnets.

cond-mat.mes-hall

Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices

The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications.

cond-mat.mtrl-sci

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator that exhibits quantum AHE in exfoliated nanoflakes. However, its complicated AHE behaviors may offer an opportunity for the unexplored correlation between magnetism and band structure. Here, we show the Berry curvature dominated intrinsic AHE in wafer-scale MnBi2Te4 thin films. By utilizing a high-dielectric SrTiO3 as the back-gate, we unveil an ambipolar conduction and electron-hole carrier (n-p) transition in ~7 septuple layer MnBi2Te4. A quadratic relation between the saturated AHE resistance and longitudinal resistance suggests its intrinsic AHE mechanism. For ~3 septuple layer MnBi2Te4, however, the AHE reverses its sign from pristine negative to positive under the electric-gating. The first-principles calculations demonstrate that such behavior is due to the competing Berry curvature between polarized spin-minority-dominated surface states and spin-majority-dominated inner-bands. Our results shed light on the physical mechanism of the gate-tunable intrinsic AHE in MnBi2Te4 thin films and provide a feasible approach to engineering its AHE.

cond-mat.mtrl-sci

Fundamental and Progress of Bi2Te3-based Thermoelectric Materials

Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experimental demonstrations, significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials. In this review, we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties. On this basis, we studied the effect of material parameters on thermoelectric properties. Then, we analyzed the features of Bi2Te3-based thermoelectric materials, including the lattice defects, anisotropic behavior and the strong bipolar conduction at relatively high temperature. Then we accordingly summarized the strategies for enhancing the thermoelectric performance, including point defect engineering, texture alignment, and band gap enlargement. Moreover, we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method, ball milling, and melt spinning. Lastly, we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3, which will enlighten the enhancement of thermoelectric performance in broader materials.

cond-mat.mtrl-sci

Room-temperature chiral charge pumping in Dirac semimetals

Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusion in Cd3As2. Apart from the conventional negative magnetoresistance, we observe an unusual nonlocal response with negative field dependence up to room temperature, originating from the diffusion of valley polarization. Furthermore, a large magneto-optic Kerr effect generated by parallel electric and magnetic fields is detected. These new experimental approaches provide a quantitative analysis of the chiral anomaly phenomenon which is inaccessible previously. The ability to manipulate the valley polarization in topological semimetal at room temperature opens up a brand-new route towards understanding its fundamental properties and utilizing the chiral fermions.

cond-mat.mtrl-sci

Limit of zT enhancement in rock-salt structured chalcogenides by band convergence?

Rock-salt structured chalcogenides, such as PbTe, PbSe, and SnTe, are the top candidates for mid-temperature thermoelectric applications, and their p-type thermoelectric efficiencies can be enhanced via aligning the valence bands. Here, we provided comprehensive numerical investigations on the effects of band convergence on electronic properties. We found that the extra valance band can indeed significantly enhance the power factor. Nevertheless, the extra valance band can also increase the electronic thermal conductivity, which partially offsets the enhanced power factor for the overall figure-of-merit. Finally, we predicted that the maximum figure-of-merit for PbTe, PbSe, and SnTe can reach to 2.2, 1.8, and 1.6, re-spectively, without relying on the reduction in lattice thermal conductivity.

cond-mat.mtrl-sci

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

cond-mat.mtrl-sci

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

cond-mat.mes-hall

DC Characterization of a Circular, Epoxy-Impregnated High Temperature Superconducting (HTS) Coil

Direct current (DC) characterization of high temperature superconducting (HTS) coils is important for HTS applications, such as electric machines, superconducting magnetic energy storage (SMES) and transformers. In this paper, DC characterization of a circular, epoxy-impregnated HTS coil made from YBCO coated conductor for use as a prototype axial flux HTS electric machine is presented. Multiple voltage taps were utilized within the coil during measurement to help provide further detailed information on its DC behavior as a function of length. Based on the experimental results, there exist regions of non-uniformity along the length of superconductor in the coil, resulting in non-ideal superconducting properties of the coil. By studying the current-voltage (I-V) curves across different regions, it is found that a decreasing n-value and critical current exists in the non-uniform parts of the HTS coil.

cond-mat.supr-con

Landau level splitting in Cd3As2 under high magnetic fields

Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed that TDSs can be driven to other exotic phases like Weyl semimetals, topological insulators and topological superconductors by breaking certain symmetries. Here we report the first transport experiment on Landau level splitting in TDS Cd3As2 single crystals under high magnetic fields, suggesting the removal of spin degeneracy by breaking time reversal symmetry. The detected Berry phase develops an evident angular dependence and possesses a crossover from nontrivial to trivial state under high magnetic fields, a strong hint for a fierce competition between the orbit-coupled field strength and the field-generated mass term. Our results unveil the important role of symmetry breaking in TDSs and further demonstrate a feasible path to generate a Weyl semimetal phase by breaking time reversal symmetry.

cond-mat.mtrl-sci

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci

Design and Performance Analysis of a 2.5 MW-Class HTS Synchronous Motor for Ship Propulsion

The development of cryogenic technology and high temperature superconducting (HTS) materials has seen continued interest worldwide in the development of HTS machines since the late 1980s. In this paper, the authors present a conceptual design of a 2.5 MW class synchronous motor. The structure of the motor is specified and the motor performance is analyzed via a three-dimensional model using the finite element method (FEM). Rotor optimization is carried out to decrease the harmonic components in the air gap field generated by HTS tapes. Based on the results of this 3D simulation, the determination of the operating conditions and load angle is discussed with consideration to the HTS material properties. The economic viability of air-core and iron-core designs is compared. The results show that this type of HTS machine has the potential to achieve an economic, efficient and effective machine design, which operates at a low load angle, and this design process provides a practical way to simulate and analyze the performance of such machines.

cond-mat.supr-con

Analysis of fields in an air-cored superconducting synchronous motor with an HTS racetrack field winding

High temperature superconducting (HTS) synchronous motors can offer significant weight and size reductions, as well as improved efficiency, over conventional copper-wound machines due to the higher current density of high temperature superconducting (HTS) materials. In order to optimise the design parameters and performance of such a machine, this paper proposes a basic physical model of an air-cored HTS synchronous motor with a copper armature winding and HTS field winding. An analytical method for the field analysis in the synchronous motor is then presented, followed by a numerical finite element analysis (FEA) model to verify the analytical solution. The model is utilised to study the influence of the geometry of the HTS coils on the magnetic field at the armature winding, and geometrical parameter optimisation is carried out using this theoretical model to obtain a more sinusoidal magnetic field at the armature, which has a major influence on the performance of the motor.

cond-mat.supr-con

Co-development of significant elastic and reversible plastic deformation in nanowires

When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deformation. Once plastic deformation is initiated, further elastic deformation is negligible owing to the limited increase in the flow stress caused by work hardening. Here we present experimental evidence and quantitative analysis of simultaneous development of significant elastic deformation and dislocation-based plastic deformation in single crystal GaAs nanowires (NWs) under bending deformation up to a total strain of ~ 6%. The observation is in sharp contrast to the previous notions regarding the deformation modes. Most of the plastic deformation recovers spontaneously when the external stress is released, and therefore resembles an elastic deformation process.

cond-mat.mtrl-sci