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Jin-Hua Gao

Publications and source records attributed to Jin-Hua Gao.

At least 37 records · Page 2Linked to original sources

Valley-selective Floquet Chern Flat Bands in Twisted Multilayer Graphene

We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moiré flat bands, and hence opens new opportunities to study the valleytronics of morié flat band systems. We thus expect that many of the valley-related properties of TMG, e.g. orbital ferromagnetism, can be switched by CPL with proper doping. We reveal a Chern number hierarchy rule for the Floquet flat bands in a generic (M+N)-layer TMG. We also illustrate that the CPL effects on TMG strongly rely on the stacking chirality, which is an unique feature of TMG. All these phenomena could be tested in the twisted double bilayer graphene systems, which is the simplest example of TMG and has already been realized in experiment.

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Doubled Moiré Flat Bands in Double-twisted Few Layer Graphite

We study the electronic structure of a double-twisted few layer graphite (DTFLG), which consists of three few layer graphite (FLG), i.e. ABA-stacked graphene multilayer, stacked with two twist angles. We consider two categories of DTFLG, alternately twisted case and chirally twisted one, according to the rotation direction of the two twist angles. We show that, once the middle FLG of DTFLG is not thinner than trilayer, both kinds of DTFLG can remarkably host two pairs of degenerate moiré flat bands (MFBs) at $E_f$, twice that of the magic angle twisted bilayer graphene (TBG). The doubled MFBs of DTFLG lead to doubled DOS at $E_f$, which implies much stronger correlation effects than the TBG. The degeneracy of MFBs can be lifted by a perpendicular electric field, and the isolated MFBs have nonzero valley Chern number. We also reveal the peculiar wave function patterns of the MFBs in the DTFLG. Our results establish a new family of moiré systems that have the much larger DOS at $E_f$, and thus possible much stronger correlation effects.

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Interplay of quantum phase transition and flat band in hybrid lattices

We investigate the interplay of superradiant phase transition (SPT) and energy band physics in an extended Dicke-Hubbard lattice whose unit cell consists of a Dicke model coupled to an atomless cavity. We found in such a periodic lattice the critical point that occurs in a single Dicke model becomes a critical region that is periodically changing with the wavenumber $k$. In the weak-coupling normal phase of the system we observed a flat band and its corresponding localization that can be controlled by the ground-state SPT. Our work builds the connection between flat band physics and SPT, which may fundamentally broaden the regimes of many-body theory and quantum optics.

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Moiré Flat Bands of Twisted Few-layer Graphite

We report that the twisted few layer graphite (tFL-graphite) is a new family of moiré heterostructures (MHSs), which has richer and highly tunable moiré flat band structures entirely distinct from all the known MHSs. A tFL-graphite is composed of two few-layer graphite (Bernal stacked multilayer graphene), which are stacked on each other with a small twisted angle. The moiré band structure of the tFL-graphite strongly depends on the layer number of its composed two van der Waals layers. Near the magic angle, a tFL-graphite always has two nearly flat bands coexisting with a few pairs of narrowed dispersive (parabolic or linear) bands at the Fermi level, thus, enhances the DOS at $E_F$. This coexistence property may also enhance the possible superconductivity as been demonstrated in other multiband superconductivity systems. Therefore, we expect strong multiband correlation effects in tFL-graphite. Meanwhile, a proper perpendicular electric field can induce several isolated nearly flat bands with nonzero valley Chern number in some simple tFL-graphites, indicating that tFL-graphite is also a novel topological flat band system.

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Higher-Order Topological Insulators in Quasicrystals

Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order topological insulators (SOTIs) can be constructed on the quasicrystalline lattices (QLs) with different tiling patterns. One is derived by using a Wilson mass term to gap out the edge states of the quantum spin Hall insulator on QLs. The other is the quasicrystalline quadrupole insulator (QI) with a quantized quadrupole moment. We reveal some unusual features of the corner states (CSs) in the quasicrystalline SOTIs. We also show that the quasicrystalline QI can be simulated by a designed electrical circuit, where the CSs can be identified by measuring the impedance resonance peak. Our findings not only extend the concept of HOTIs into quasicrystals but also provide a feasible way to detect the topological property of quasicrystals in experiments.

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Local magnetic moment oscillation around an Anderson impurity on graphene

We theoretically investigate the spin resolved Friedel oscillation (FO) and quasiparticle interference (QPI) in graphene induced by an Anderson impurity. Once the impurity becomes magnetic, the resulted FO becomes spin dependent, which gives rise to a local magnetic moment oscillation with an envelop decaying as $r^{-2}$ in real space in the doping cases. Meanwhile, at half filling, the charge density and local magnetic moment will not oscillate but decay as $r^{-3}$. Such spin resolved FO has both sublattice and spin asymmetry. Interestingly, the local magnetic moment decay at half filling only occurs at one sublattice of graphene, which is quite like the phenomenon observed in a recent STM experiment [H. Gonzalez-Herrero et al., Science 352, 437 (2016)]. We further give an analytic formula about such spin dependent FO based on the stationary phase approximation. Finally, we study the interference of quasiparticles around the magnetic impurity by calculating the spin-dependent Fourier-transformed local density of states (FT-LDOS). Our work gives a comprehensive understanding about the local magnetic moment oscillation around an Anderson impurity on graphene.

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Hydrogen-induced magnetism in graphene: a simple effective model description

Hydrogen adatoms induced magnetic moment on graphene has been observed in atomic scale in a recent experiment [Gonzalez-Herrero et al., Science 352, 437 (2016)]. Here, we demonstrate that all the experimental phenomena can be simply and well described by an equivalent Anderson impurity model, where the electronic correlations on both carbon and hydrogen atoms are represented by an effective on-site Coulomb interaction on hydrogen adatom $U_H$. This simple equivalent model works so well is because that the main effect of Coulomb interaction on both carbon and hydrogen atoms is just to split the impurity resonance states with different spin. This effective Anderson impurity model can also well reproduce all the behaviours of hydrogen dimer on graphene observed in experiment. We thus argue that it should be a general model to describe the hydrogen adatoms on graphene with various adsorption configurations, especially for their magnetic properties.

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Topological flat bands in twisted trilayer graphene

Twisted trilayer graphene (TLG) may be the simplest realistic system so far, which has flat bands with nontrivial topology. Here, we give a detailed calculation about its band structures and the band topology, i.e. valley Chern number of the nearly flat bands, with the continuum model. With realistic parameters, the magic angle of twisted TLG is about 1.12$^{\circ}$, at which two nearly flat bands appears. Unlike the twisted bilayer graphene, a small twist angle can induce a tiny gap at all the Dirac points, which can be enlarged further by a perpendicular electric field. The valley Chern numbers of the two nearly flat bands in the twisted TLG depends on the twist angle $θ$ and the perpendicular electric field $E_\perp$. Considering its topological flat bands, the twisted TLG should be an ideal experimental platform to study the strongly correlated physics in topologically nontrivial flat band systems. And, due to its reduced symmetry, the correlated states in twisted TLG should be quite different from that in twisted bilayer graphene and twisted double bilayer graphene.

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Flat band localization due to self-trapped orbital

We discover a new wave localization mechanism in a periodic system without any disorder, which can produce a novel type of perfect flat band and is distinct from the known localization mechanisms, i.e., Anderson localization and flat band lattices. The first example we give is a designed electron waveguide on 2DEG with special periodic confinement potential. Numerical calculations show that, with proper confinement geometry, electrons can be completely localized in an open waveguide. We interpret this flat band localization phenomenon by introducing the concept of self-trapped orbitals. In our treatment, each unit cell of the waveguide is equivalent to an artificial atom, where the self-trapped orbital is one of its eigenstates with unique spatial distribution. These self-trapped orbitals form the flat bands in the waveguide. This flat band localization through self-trapped orbitals is a general phenomenon of wave motion, which can arise in any wave systems with carefully engineered boundary conditions. We then design a metallic waveguide array to illustrate that similar flat band localization can be readily realized and observed with electromagnetic waves.

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Hybrid Interference Induced Flat Band Localization in Bipartite Optomechanical Lattices

The flat band localization, as an important phenomenon in solid state physics, is fundamentally interesting in the exploration of exotic ground property of many-body system. Here we demonstrate the appearance of a flat band in a general bipartite optomechanical lattice, which could have one or two dimensional framework. Physically, it is induced by the hybrid interference between the photon and phonon modes in optomechanical lattice, which is quite different from the destructive interference resulted from the special geometry structure in the normal lattice (e.g., Lieb lattice). Moreover, this novel flat band is controllable and features a special local density of states (LDOS) pattern, which makes it is detectable in experiments. This work offers an alternative approach to control the flat band localization with optomechanical interaction, which may substantially advance the fields of cavity optomechanics and solid state physics.

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Orbital degree of freedom in artificial electron lattices on metal surface

Orbital degree of freedom plays a fundamental role in condensed matter physics. Recently, a new kind of artificial electron lattice has been realized in experiments by confining the metal surface electrons with adsorbed molecular lattice. A most recent example is the Lieb lattice realized by CO adsorption on Cu(111) surface [M. R. Slot, et al., Nat. Phys. 13, 672(2017)]. The Lieb lattice is of special interest due to its flat band physics. Here, by first-principles calculations, muffin-tin potential model and tight binding model, we demonstrate that, the high energy states observed in the experiment actually correspond to the artificial $p$-orbitals of the electron lattice. Our numerical results, together with the experimental observation, show that artificial $p$-orbital fermionic lattice has already been realized in solid state system. This opens a new avenue to investigate the orbital degree of freedom in a controllable way.

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Fano-shaped impurity spectral density, electric-field-induced in-gap state and local magnetic moment of an adatom on trilayer graphene

Recently, the existence of local magnetic moment in a hydrogen adatom on graphene has been confirmed experimentally [González-Herrero et al., Science, 2016, 352, 437]. Inspired by this breakthrough, we theoretically investigate the top-site adatom on trilayer graphene (TLG) by solving the Anderson impurity model via self-consistent mean field method. The influence of the stacking order, the adsorption site and external electric field are carefully considered. We find that, due to its unique electronic structure, the situation of the TLG is drastically different from that of the monolayer graphene. Firstly, the adatom on rhombohedral stacked TLG (r-TLG) can have a Fano-shaped impurity spectral density, instead of the normal Lorentzian-like one, when the impurity level is around the Fermi level. Secondly, the impurity level of the adatom on r-TLG can be tuned into an in-gap state by an external electric field, which strongly depends on the direction of the applied electric field and can significantly affect the local magnetic moment formation. Finally, we systematically calculate the impurity magnetic phase diagrams, considering various stacking orders, adsorption sites, doping and electric field. We show that, because of the in-gap state, the impurity magnetic phase of r-TLG will obviously depend on the direction of the applied electric field as well. All our theoretical results can be readily tested in experiment, and may give a comprehensive understanding about the local magnetic moment of adatom on TLG.

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Desiging Artificial Lieb Lattice on Metal Surface

Recently, several experiments have illustrated that metal surface electrons can be manipulated to form a two dimensional (2D) lattice by depositing a designer molecule lattice on metal surface. This offers a promising new technique to construct artificial 2D electron lattices. Here we theoretically propose a molecule lattice pattern to realize an artificial Lieb lattice on metal surface, which shows a flat electronic band due to the lattice geometry. We show that the localization of electrons in the flat band may be understood from the viewpoint of electron interference, which may be probed by measuring the local density of states with the scanning tunnelling microscopy. Our proposal may be readily implemented in experiment and may offer an ideal solid state platform to investigate the novel flat band physics of the Lieb lattice.

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Circuit Quantum Electrodynamics Simulator of Flat Band Physics in Lieb lattice

The concept of flat band plays an important role in strongly-correlated many-body physics. However, the demonstration of the flat band physics is highly nontrivial due to intrinsic limitations in conventional condensed matter materials. Here we propose a circuit quantum electrodynamics simulator of the 2D Lieb lattice exhibiting a flat middle band. By exploiting the simple parametric conversion method, we design a photonic Lieb lattice with \textit{in situ} tunable hopping strengths in a 2D array of coupled superconducting transmissionline resonators. Moreover, the flexibility of our proposal enables the immediate incorporation of both the artificial gauge field and the strong photon-photon interaction in a time- and site-resolved manner. To unambiguously demonstrate the synthesized flat band, we further investigate the observation of the flat band localization of microwave photons through the pumping and the steady-state measurements of only few sites on the lattice. Requiring only current level of technique and being robust against imperfections in realistic circuits, our scheme can be readily tested in experiments and may pave a new way towards the future realization of exotic photonic quantum Hall fluids including anomalous quantum Hall effect and bosonic fractional quantum Hall states without magnetic fields.

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The Effective Model of the Molecule Graphene System and One Application Beyond Graphene

Recently, a new kind of two dimensional (2D) artificial electron lattice, i.e. molecule graphene, has drawn a lots of interest, where the metal surface electrons are transformed into a honeycomb lattice via absorbing a molecule lattice on metal surface. In this work, we would like to point out that the technique used to build molecule graphene actually gives a promising way to explore the interesting physics of other novel 2D lattice beyond graphene. The key issue is that this system is an antidot system, where the absorbed molecule normally gives a repulsive potential. So, we need to establish a map between the molecule arrangement and the desired surface electron lattice. To give a concrete example, we first analyse the effective models of molecule graphene, and estimate the model parameters for the Cu/CO system through numerical fitting the exerimental data. Then, we design a molecule lattice, and show that, with this kind of lattice, the surface electrons can be transformed into a Kagome like lattice. Using the estimated parameters of Cu/CO system, we calculate the corresponding energy bands and LDOS, which can be readily tested in experiment. We hope that our work can stimulate further theoretical and experimental interest in this novel artificial 2D electron lattice.

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Superconductivity in a molecular graphene

We propose that constructing a molecule super-lattice on a superconducting ultrathin film is a promising way to manipulate superconductivity in experiment. We theoretically study superconductivity in a molecule graphene system, which is built by fabricating a hexagonal molecule super-lattice on 2-dimensional electron gas. The super-lattice potential dramatically changes the electron density of states, which oscillates as function of the energy. We show that such a molecular graphene may increase superconducting gap by a few times, which may open a new route to realize high temperature superconductivity.

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Finite Size Effect in the Quantum Anomalous Hall system

We theoretically investigate the finite size effect in quantum anomalous Hall (QAH) system. Using Mn-doped HgTe quantum well as an example, we demonstrate that the coupling between the edge states is spin dependent, and is related not only to the distance between the edges but also to the doping concentration. Thus, with proper tuning of the two, we can get four kinds of transport regimes: quantum spin Hall regime, QAH regime, edge conducting regime, and normal insulator regime. These transport regimes have distinguishing edge conducting properties while the bulk is insulting. Our results give a general picture of the finite size effect in QAH system, and are important for the transport experiments in QAH nanomaterials as well as future device applications.

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Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value $2e^2/h$ in light dopant concentration, consistent with recent experiments by Du et al. We predict a conductance dip structure due to backward scattering in the region where the localization length $ξ$ is comparable with the sample width $L_y$ but much smaller than the sample length $L_x$.

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