arXiv subjects

Jinbang Hu

Publications and source records attributed to Jinbang Hu.

8 recordsLinked to original sources

arXiv2025

Tailoring the Electronic Structure of Ni(111) by Alloying with Sb Ad-Atoms

Surface alloying can alter surface electronic and magnetic properties, which are key parameters when developing new materials tailored for specific applications. A magnetic surface alloy was formed by depositing Sb on Ni(111) at elevated temperatures, yielding new electronic states at the Fermi level and modifying the Ni-derived bandstructure. In particular, it changed the electron occupancy of the spin-polarized surface resonance bands, which may affect the magnetic properties of the surface and its associated many-body effects. By fitting a finite element model to angle-dependent core level measurements, similar amounts of Sb and Ni were found within the first few atomic layers to indicate a near-surface composition similar to the bulk alloy NiSb. Annealing to higher temperatures post-growth further improved the crystalline quality of the surface. Our investigation of the surface alloy's crystallinity, chemical composition, and layer structure lays the basis for future studies of how its electronic and magnetic properties can be modified.

cond-mat.mtrl-sci↗

arXiv2024

Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers

We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

cond-mat.mtrl-sci↗

arXiv2024

An energy-dependent broadening of Rashba-like spin splitting in Au2Sb surface alloy with periodic structural defect

Here, we report a novel AuSb 2D superstructure on Au(111) that shows agreements and discrepancies to the expected electronic features of the ideal 2D surface alloys with $\sqrt{3}\times\sqrt{3}$ periodicity. Using spin- and angle-resolved photoemission spectroscopy, we find a spin splitting of the alloy bands with antiparallel spin polarization, stemming from Rashba spin-orbit coupling. However, the observed Rashba bands are significantly broadened. Taking advantage of the good agreement between the experimental results and DFT calculations, we determine that the broadening of the Rashba band is due to the perturbations from the 3-pointed-star-shaped defects acting as nonresonant impurities in the Au2Sb superstructure. These periodic defects can shift the energy position of the Rashba band without breaking the in-plane rotational symmetry and mirror symmetry, which suggests that introducing periodic defects into a Rashba SOC system possesses a great potential in engineering the spin-dependent properties of spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Chiral Quantum well Rashba splitting in Sb monolayer on Au(111)

We present a comprehensive investigation into the atomic and electronic structures of a single-layer Sb(110) rhombohedral crystal formed on an Au(111) substrate. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) reveal a pure two-dimensional (2D) Sb stripe structure, composed of a pair of Sb(110) unit cells located in a chiral configuration with mirror symmetry breaking perpendicular to the direction of the bright stripe. Based on angle-resolved photoemission spectroscopy (ARPES) measurements and Sb-weighted band structure from density functional theory calculations, we report the unambiguous determination of Rashba spin-orbit coupled bands from the 2D Sb film, exhibiting a chiral symmetry in the electronic structure with the crossing points located at the $Γ$ point and the X point, respectively. Moreover, From dI/dV spectra and density of states (DOS) calculations, the quantum well (QW) Rashba-type states induced by the in-plane mirror symmetry breaking in the Sb stripe structure have been identified. Orbital decomposition of the projected band structure reveals that hybridization between Sb py states and Au states modifies the spin splitting of the QW states, attributed to the intrinsic strong SOC of Au states introduced into the QW states.

cond-mat.mtrl-sci↗

arXiv2024

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Herein, we report the reversible structural transition of single-layer VSe2 grown on Au(111) through alternating thermal annealing and Se replenishment. Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxial growth of high-quality VSe2 on Au(111) with the octahedral (1T) structure and the Se-vacancy-induced transformation of VSe2 from the metallic moiré (1T) phase to the semiconducting (2H) phase. With convincing agreement between the experimental results and DFT calculations, the nanostructure near the grain boundary in the defective intermediate phase is confirmed, as well as the reaction pathway with Se gradually depleting at elevated temperatures. Importantly, it is revealed that the density of the linear Se defects plays a crucial role in the formation of the 2H domain phase due to the increment of the in-plane lattice parameter after Se desorption and the better thermal stability of the 2H phase compared to the 1T phase. The proper control of the density of Se atoms in the topmost Se layer of VSe2 could feasibly manipulate the ratio between the 1T phase and the 2H phase in the steak-shaped domain, which is regarded as a good platform for 2D homojunctions in nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2023

Disentangling Electron-Boson Interactions on the Surface of a Familiar Ferromagnet

We report energy renormalizations from electron-phonon and electron-magnon interactions in spin minority surface resonances on Ni(111). The different interactions are identified, disentangled, and quantified from the characteristic signatures they provide to the complex self-energy and the largely different binding energies at which they occur. The observed electron-magnon interactions exhibit a strong dependence on momentum and energy band position in the bulk Brillouin zone. In contrast, electron-phonon interactions from the same bands appear to be relatively momentum- and symmetry-independent. Additionally, a moderately strong ($λ>0.5$) electron-phonon interaction is distinguished from a near-parabolic spin majority band not crossing the Fermi level.

cond-mat.mtrl-sci↗

arXiv2023

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $π$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.

cond-mat.mtrl-sci↗

arXiv2022

One-Dimensional Spin-Polarised Surface States -- A Comparison of Bi(112) with Other Vicinal Bismuth Surfaces

Vicinal surfaces of bismuth are unique test-beds for investigating one-dimensional (1D) spin-polarised surface states that may one day be used in spintronic devices. In this work, two such states have been observed for the (112) surface when measured using angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES, and when calculated using a tight-binding (TB) model and with density functional theory (DFT). The surface states appear as elongated Dirac-cones which are 1D and almost dispersionless in the ${k}_{\text{y}}$-direction, but disperse with energy in the orthogonal ${k}_{\text{x}}$-direction to form two ``$\times$''-like features centered at the ${k}_{\text{y}}$-line through $Γ$. Unlike many materials considered for spintronic applications, their 1D nature suggests that conductivity and spin-transport properties are highly dependent on direction. The spin-polarisation of the surface states is mainly in-plane and parallel to the 1D state, but there are signs of a tilted out-of-plane spin-component for one of them. The Bi(112) surface states resemble those found for other vicinal surfaces of bismuth, strongly indicating that their existence and general properties are robust properties of vicinal surfaces of bismuth. Furthermore, differences in the details of the states, particularly related to their spin-polarisation, suggest that spin-transport properties may be engineered simply by precise cutting and polishing of the crystal.

cond-mat.mtrl-sci↗