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Jinchen Wei

Publications and source records attributed to Jinchen Wei.

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A wrong ground-state structure of HfO$_2$ predicted by machine-learning interatomic potentials based on the PBE functional

Machine-learning interatomic potentials (MLIPs) have become powerful tools for material simulations. Many MLIPs are trained based on density functional theory (DFT) datasets generated with the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional. Using a PBE-based MLIP for HfO2, we identify a previously unreported low-energy I41/amd structure, which is predicted to be more stable than the well-known ground-state structure, the monoclinic P21/c structure. Since experiments show clearly that HfO2 takes the P21/c structure as the ground state, this is obviously a wrong prediction. Unfortunately, the same prediction is also made by widely used PBE-based foundation models such as NequIP-OAM-L and MatterSim-v1-5M. Comparisons among different DFT functionals show that this error originates from the PBE functional, which overstabilizes low-density structures containing sixfold Hf-O octahedral units, such as the I41/amd and Pbcn phases. The error also affects the calculated energy landscapes and barrier heights along ferroelectric HfO2 polarization switching paths when there are large lattice relaxations. Fortunately, the error can be largely suppressed by other functionals such as PBEsol and local density approximation. Our study serves as a warning about the impact of errors in exchange-correlation functional approximations on the reliability of MLIP simulations of crystal structures and phase transitions.

cond-mat.mtrl-sci

DASP: Defect and Dopant ab-initio Simulation Package

In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers.

cond-mat.mtrl-sci