arXiv subjects

Jincheng Zhuang

Publications and source records attributed to Jincheng Zhuang.

30 records · Page 2Linked to original sources

arXiv2017

LWE from Non-commutative Group Rings

The Ring Learning-With-Errors (LWE) problem, whose security is based on hard ideal lattice problems, has proven to be a promising primitive with diverse applications in cryptography. There are however recent discoveries of faster algorithms for the principal ideal SVP problem, and attempts to generalize the attack to non-principal ideals. In this work, we study the LWE problem on group rings, and build cryptographic schemes based on this new primitive. One can regard the LWE on cyclotomic integers as a special case when the underlying group is cyclic, while our proposal utilizes non-commutative groups, which eliminates the weakness associated with the principal ideal lattices. In particular, we show how to build public key encryption schemes from dihedral group rings, which maintains the efficiency of the ring-LWE and improves its security.

cs.CR↗

arXiv2015

Observation of van Hove Singularities in Twisted Silicene Multilayers

Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing sp 2 and sp 3 hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic structures through manipulating interlayer coupling. Here, we report the emergence of van Hove singularities in the multilayer silicene created by an interlayer rotation. We demonstrate that even a large-angle rotation (> 20 o ) between stacked silicene layers can generate a Moire pattern and van Hove singularities due to the strong interlayer coupling in multilayer silicene. Our study suggests an intriguing method for expanding the tunability of the electronic structure for electronic applications in this two-dimensional material.

cond-mat.mtrl-sci↗

arXiv2015

Metal-Silicene Interaction Studied by Scanning Tunneling Microscopy

Ag atoms have been deposited on 3x3 silicene and R3xR3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectroscopy, we found that Ag atoms do not form chemical bonds with both 3x3 silicene and R3xR3 silicene films,which is due to chemically inert surface of silicene. On 3x3 silicene films, Ag atoms mostly form into stable flat top Ag islands. In contrast, Ag atoms form nanoclusters and glide on silicene films, suggesting more inert nature. Raman spectroscopy suggests that there is more sp2 hybridization in R3xR3 than in R7xR7/3x3silicene films

cond-mat.mtrl-sci↗

arXiv2015

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

In this letter, we report that the special coupling between Dirac fermion and lattice vibrations, in other words, electron-phonon coupling (EPC), in silicene layers on Ag(111) surface was probed by an in-situ Raman spectroscopy. We find the EPC is significantly modulated due to tensile strain, which results from the lattice mismatch between silicene and the substrate, and the charge doping from the substrate. The special phonon modes corresponding to two-dimensional electron gas scattering at edge sites in the silicene were identified. Detecting relationship between EPC and Dirac fermion through the Raman scattering will provide a direct route to investigate the exotic property in buckled two-dimensional honeycomb materials.

cond-mat.mtrl-sci↗

arXiv2014

Effects of Oxygen Adsorption on the Surface State of Epitaxial Silicene on Ag(111)

Epitaxial silicene, which is one single layer of silicon atoms packed in a honeycomb structure, demonstrates a strong interaction with the substrate that dramatically affects its electronic structure. The role of electronic coupling in the chemical reactivity between the silicene and the substrate is still unclear so far, which is of great importance for functionalization of silicene layers. Here, we report the reconstructions and hybridized electronic structures of epitaxial 4x4 silicene on Ag(111), which are revealed by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. The hybridization between Si and Ag results in a metallic surface state, which can gradually decay due to oxygen adsorption. X-ray photoemission spectroscopy confirms the decoupling of Si-Ag bonds after oxygen treatment as well as the relatively oxygen resistance of Ag(111) surface, in contrast to 4x4 silicene [with respect to Ag(111)]. First-principles calculations have confirmed the evolution of the electronic structure of silicene during oxidation. It has been verified experimentally and theoretically that the high chemical activity of 4x4 silicene is attributable to the Si pz state, while the Ag(111) substrate exhibits relatively inert chemical behavior.

cond-mat.mes-hall↗

arXiv2014

Tuning the Band Gap in Silicene by Oxidation

Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.

cond-mat.mtrl-sci↗

arXiv2014

Unabridged phase diagram for single-phased FeSexTe1-x thin films

A complete phase diagram and its corresponding physical properties are essential prerequisites to understand the underlying mechanism of iron based superconductivity. For the structurally simplest 11 (FeSeTe) system, earlier attempts using bulk samples have not been able to do so due to the fabrication difficulties. Here, thin FeSexTe1-x films with the Se content covering the full range were fabricated by using pulsed laser deposition method. Crystal structure analysis shows that all films retain the tetragonal structure in room temperature. Significantly, the highest superconducting transition temperature (TC = 20 K) occurs in the newly discovered domain, 0.6 - 0.8. The single-phased superconducting dome for the full Se doping range is the first of its kind in iron chalcogenide superconductors. Our results present a new avenue to explore novel physics as well as to optimize superconductors.

cond-mat.supr-con↗

arXiv2014

Bulk Superconductivity in Fe1+yTe0.6Se0.4 Induced by Removal of Excess Fe

Experimental evidences from transport, magnetic, and magneto-optical (MO) image measurements confirmed that arsenic (As) vapor annealing was another effective way to induce bulk superconductivity with isotropic, large, and homogenous superconducting critical current density (Jc) in Fe1+yTe0.6Se0.4 single crystal. Since As is an exotic and easily detectable heavy element to Fe1+yTe0.6Se0.4 single crystal, As vapor annealing is very advantageous for the study of annealing mechanism. Detailed micro-structural and elemental analyses exclude the possibility that intercalating or doping effect may happen in the other post-annealing methods, proving that Fe reacts with As on the surface of the crystal and the reaction itself acts as a driving force to drag excess Fe out. The removal of excess Fe results in the good superconductivity performance.

cond-mat.supr-con↗

arXiv2014

Anisotropic Superconductivity of Ca1-xLaxFeAs2 (x ~ 0.18) Single Crystal

Anisotropic superconducting properties including the upper critical field Hc2, thermal activation energy U0, and critical current density Jc are systematically studied in a large Ca1-xLaxFeAs2 single crystal (x ~ 0.18). The obtained Hc2 bears a moderate anisotropy gamma of approximately 2-4.2, located between those of '122' Ba1-xKxFe2As2 (1 < gamma < 2) and '1111' NdFeAsO1-xFx (5 < gamma < 9.2). Both the magnitude of U0 and its field dependence are very similar to those of NdFeAsO1-xFx, also indicating anisotropic superconductivity. Moreover, high and anisotropic Jc's exceeding 10^5 A/cm2 have been calculated from the magnetization hysteresis loops, indicating the existence of strong bulk-dominated pinning in the present superconducting material.

cond-mat.supr-con↗

arXiv2013

On Determining Deep Holes of Generalized Reed-Solomon Codes

For a linear code, deep holes are defined to be vectors that are further away from codewords than all other vectors. The problem of deciding whether a received word is a deep hole for generalized Reed-Solomon codes is proved to be co-NP-complete. For the extended Reed-Solomon codes $RS_q(\F_q,k)$, a conjecture was made to classify deep holes by Cheng and Murray in 2007. Since then a lot of effort has been made to prove the conjecture, or its various forms. In this paper, we classify deep holes completely for generalized Reed-Solomon codes $RS_p (D,k)$, where $p$ is a prime, $|D| > k \geqslant \frac{p-1}{2}$. Our techniques are built on the idea of deep hole trees, and several results concerning the Erd{ö}s-Heilbronn conjecture.

cs.IT↗

arXiv2013

Traps to the BGJT-Algorithm for Discrete Logarithms

In the recent breakthrough paper by Barbulescu, Gaudry, Joux and Thom{é}, a quasi-polynomial time algorithm (QPA) is proposed for the discrete logarithm problem over finite fields of small characteristic. The time complexity analysis of the algorithm is based on several heuristics presented in their paper. We show that some of the heuristics are problematic in their original forms, in particular, when the field is not a Kummer extension. We believe that the basic idea behind the new approach should still work, and propose a fix to the algorithm in non-Kummer cases, without altering the quasi-polynomial time complexity. The modified algorithm is also heuristic. Further study is required in order to fully understand the effectiveness of the new approach.

math.NT↗

arXiv2012

On Certain Computations of Pisot Numbers

This paper presents two algorithms on certain computations about Pisot numbers. Firstly, we develop an algorithm that finds a Pisot number $α$ such that $\Q[α] = \F$ given a real Galois extension $\F$ of $\Q$ by its integral basis. This algorithm is based on the lattice reduction, and it runs in time polynomial in the size of the integral basis. Next, we show that for a fixed Pisot number $α$, one can compute $ [α^n] \pmod{m}$ in time polynomial in $(\log (m n))^{O(1)}$, where $m$ and $n$ are positive integers.

math.NT↗