arXiv subjects

Jinfeng Kang

Publications and source records attributed to Jinfeng Kang.

5 recordsLinked to original sources

arXiv2026

Domain Walls Stabilized by Intrinsic Phonon Modes and Engineered Defects Enable Robust Ferroelectricity in HfO2

Ferroelectric $\mathrm{HfO}_2$ has attracted extensive research interest for its applications in AI era. The domain walls play a crucial role in phase structure stabilization and polarization switching of ferroelectric $\mathrm{HfO}_2$, however, a thorough understanding is still lacking. Here, we developed a unified framework based on phonon mode expansion to systematically study the effects of phonon modes and defects on domain wall structures. Using this approach combined with first-principle calculations, we revealed that the interface phonon modes play a key role in stability of domain walls; defects pin and stabilize ferroelectric domains, which in turn stabilizes the metastable orthorhombic phase and facilitates polarization switching. This provides an insight from the microscopic physics origin into the enhanced ferroelectricity in $\mathrm{HfO}_2$ by doping and defect engineering. Furthermore, the theoretically predicted domain structures and defect distributions were observed in La-doped $\mathrm{HfO}_2$ ferroelectric films by EELS and STEM experiments, which confirms the validity of our findings.

cond-mat.mtrl-sci↗

arXiv2026

Decoding the Complexity of Ferroelectric Orthorhombic HfO2: A Unified Mode Expansion Approach

The ferroelectricity in $\mathrm{HfO}_2$ thin films is widely attributed to the formation of a polar orthorhombic phase named OIII phase. However, the complexity of OIII phase originated from its low symmetry becomes an obstacle for studying ferroelectric properties of $\mathrm{HfO}_2$. Here, we developed a unified framework based on phonon mode expansion for studying ferroelectric $\mathrm{HfO}_2$. In this framework, phase structures, domain walls and switching paths of orthogonal crystal system can be studied from the same basis of mode analysis. The OIII phase and other orthogonal phases can be represented by the high-symmetry cubic phase with the excitation of cubic phonon modes, into which the complexity of orthogonal phases is faithfully coded. To present the capability of this mode expansion approach, we clarified the origin of orthorhombic stability from the energy functional of modes; enumerated inequivalent domain walls and calculated their stable criteria; and summarized all possible switching mechanisms. This unified framework can be used to simplify the study of domain wall structures and transition paths. Furthermore, it can provide a new perspective for ferroelectricity in $\mathrm{HfO}_2$ from phonon mode analysis.

cond-mat.mtrl-sci↗

arXiv2019

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack configurations. With Monte Carlo SPICE simulations, we show that an increase in array size and interconnect wire resistance will statistically deteriorate write functionality. Write failure probability (WFP) has an exponential dependency on device uniformity and supply voltage (VDD), and the array bias scheme is a key knob. Lowering array VDD leads to higher effective energy consumption (EEC) due to the increase in WFP when the variation statistics are included in the analysis. Random-access simulations indicate that data sparsity statistically benefits write functionality and energy consumption. Finally, we show that a pseudo-sub-array topology with uniformly distributed pre-forming cells in the pristine high resistance state is able to reduce both WFP and EEC, enabling higher net capacity for memory circuits due to improved variation tolerance.

cs.ET↗

arXiv2013

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

A tunneling field effect transistor based on armchair graphene nanoribbons is studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By introducing a pocket doping region near the source, the performance of GNRs TFET is improved in terms of larger on current and steeper subthreshold swings compared to conventional tunneling FET. It is also found that pocket region introduces two interesting features. By increasing the pocket length the ambipolar can be effectively suppressed. Furthermore, there is negative trans-conductance at negative gate voltage due to resonance.

cond-mat.mes-hall↗

arXiv2013

Improved Performance of Tunneling FET Based on Hetero Graphene Nanoribbons

A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low band gap nanoribbons as the source/drain material, the hetero- structure shows better performance including higher on current, lower off current, and improved steep subthreshold swings compared with homostructure. It is also found the device performance greatly depends on the source/drain dopping density. High doping density leads to fewer density states in the source and degrades the device performance.

cond-mat.mes-hall↗