SearcharxivSearch

arXiv subjects

Jinfeng Zhai

Publications and source records attributed to Jinfeng Zhai.

4 recordsLinked to original sources

Multiferroicity in the two-dimensional limit in hexagonal LuFeO3 films

Multiferroic oxides, which combine coupled ferroelectric and magnetic orders, are central to understanding correlated quantum phenomena. Yet, as thickness approaches the two-dimensional (2D) limit, both ferroelectricity and magnetism are conventionally expected to vanish due to depolarization fields and finite-size effects, respectively. Here, we demonstrate that hexagonal LuFeO3 (h-LuFeO3) retains coupled ferroelectricity and magnetism at the 2D limit, with a thickness of just one and a half unit cells. Remarkably, the ferroelectric polarization remains comparable to bulk values at room temperature, while long-range magnetism and magnetoelectric coupling persist at low temperatures. We further show that the K3 phonon mode, which mediates the polarization-magnetism coupling, is stable down to the 2D limit. Our results establish h-LuFeO3 as the first oxide system to exhibit genuine 2D-limit multiferroicity, providing a fundamental breakthrough in the long-standing quest to understand and control coupled ferroic orders at the atomic scale.

cond-mat.mtrl-sci

Sign reversal of Berry curvature triple driven by magnetic phase transition in a ferromagnetic polar metal

While the time-reversal-even (T-even) nonlinear Hall effect has been extensively discussed in nonmagnetic materials, the impact of magnetic phase transition on it remains largely overlooked. Here, we report an abrupt enhancement of the T-even nonlinear Hall effect in non-centrosymmetric SrRuO3(111) thin films during the paramagnetic-ferromagnetic transition. Scaling analysis reveals a sign reversal of both the skew scattering and side jump contributions upon the emergence of magnetism, which we attribute to the sign change of Berry curvature triple on the Fermi surface. Density functional theory calculations support this interpretation, ascribing this behavior to distinctive origins of Berry curvature hot spots in paramagnetic and ferromagnetic phases. Our findings unveil the exchange-induced dramatic nonperturbative change of nonlinear Hall effect, and establish SrRuO3(111) thin films as a promising platform for exploring magnetically tunable nonlinear transport effects.

cond-mat.mtrl-sci

Observation of giant nonlinear valley Hall effect

The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses undetected and nonlinear valleytronic devices undeveloped. Here, we report the experimental observation of a nonlinear VHE in a graphene-hBN moire superlattice, evidenced by the generation of second-harmonic nonlocal voltages under AC currents. Remarkably, the nonlinear VHE has magnitude surpassing the linear VHE and is highly tunable via a gate voltage, which exhibits a pair of opposite peaks on the two sides of a Dirac gap. The nonlinear signal shows quadratic scaling with driving current and quartic scaling with local resistance, setting it apart from the linear counterpart. These experimental features are consistent with the theoretical picture of nonlocal transport mediated by nonlinear VHE and linear inverse VHE. We further reveal a nonlinear inverse VHE by observing the third- and fourth-harmonic nonlocal voltages. The nonlinear VHE provides a novel mechanism for valley manipulation and enables a novel valleytronic device, the valley rectifier, that converts AC charge current into DC valley current.

cond-mat.mes-hall

Large nonlinear Hall effect and Berry curvature in KTaO3 based two-dimensional electron gas

The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the emergence of large nonlinear Hall effects (NHE) in the LaAlO3/KTaO3(111) interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear Hall conductivity with longitudinal conductivity and the threefold symmetry. Moreover, a gate-tunable NHE with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triple at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. NHE offers a new pathway to probe the Berry curvature at oxide interfaces, and facilitates new applications in oxide nonlinear electronics.

cond-mat.mtrl-sci