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Jing Wan

Publications and source records attributed to Jing Wan.

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NTIRE 2025 XGC Quality Assessment Challenge: Methods and Results

This paper reports on the NTIRE 2025 XGC Quality Assessment Challenge, which will be held in conjunction with the New Trends in Image Restoration and Enhancement Workshop (NTIRE) at CVPR 2025. This challenge is to address a major challenge in the field of video and talking head processing. The challenge is divided into three tracks, including user generated video, AI generated video and talking head. The user-generated video track uses the FineVD-GC, which contains 6,284 user generated videos. The user-generated video track has a total of 125 registered participants. A total of 242 submissions are received in the development phase, and 136 submissions are received in the test phase. Finally, 5 participating teams submitted their models and fact sheets. The AI generated video track uses the Q-Eval-Video, which contains 34,029 AI-Generated Videos (AIGVs) generated by 11 popular Text-to-Video (T2V) models. A total of 133 participants have registered in this track. A total of 396 submissions are received in the development phase, and 226 submissions are received in the test phase. Finally, 6 participating teams submitted their models and fact sheets. The talking head track uses the THQA-NTIRE, which contains 12,247 2D and 3D talking heads. A total of 89 participants have registered in this track. A total of 225 submissions are received in the development phase, and 118 submissions are received in the test phase. Finally, 8 participating teams submitted their models and fact sheets. Each participating team in every track has proposed a method that outperforms the baseline, which has contributed to the development of fields in three tracks.

cs.CV

A Benchmark Dataset and a Framework for Urdu Multimodal Named Entity Recognition

The emergence of multimodal content, particularly text and images on social media, has positioned Multimodal Named Entity Recognition (MNER) as an increasingly important area of research within Natural Language Processing. Despite progress in high-resource languages such as English, MNER remains underexplored for low-resource languages like Urdu. The primary challenges include the scarcity of annotated multimodal datasets and the lack of standardized baselines. To address these challenges, we introduce the U-MNER framework and release the Twitter2015-Urdu dataset, a pioneering resource for Urdu MNER. Adapted from the widely used Twitter2015 dataset, it is annotated with Urdu-specific grammar rules. We establish benchmark baselines by evaluating both text-based and multimodal models on this dataset, providing comparative analyses to support future research on Urdu MNER. The U-MNER framework integrates textual and visual context using Urdu-BERT for text embeddings and ResNet for visual feature extraction, with a Cross-Modal Fusion Module to align and fuse information. Our model achieves state-of-the-art performance on the Twitter2015-Urdu dataset, laying the groundwork for further MNER research in low-resource languages.

cs.CL

LEIA discovery of the longest-lasting and most energetic stellar X-ray flare ever detected

The Lobster Eye Imager for Astronomy (LEIA) detected a new X-ray transient on 2022 November 7, identified as a superflare event occurring on a nearby K-type giant star HD 251108. The flux increase was also detected in follow-up observations at X-ray, UV and optical wavelengths. The flare lasted for about 40 days in soft X-ray observations, reaching a peak luminosity of ~1.1 * 10^34 erg/s in 0.5-4.0 keV, which is roughly 60 times the quiescent luminosity. Optical brightening was observed for only one night. The X-ray light curve is well described by a double fast rise and exponential decay model, attributed to the cooling process of a loop arcade structure formed subsequent to the initial large loop with a half-length of ~1.9 * 10^12 cm. Time-resolved X-ray spectra were fitted by a four-temperature apec model (with three components being the quiescent background), showing significant evolution of plasma temperature and emission measure over time. The estimated energy released in the LEIA band is ~3 * 10^39 erg, suggesting that this is likely the most energetic X-ray stellar flare with the longest duration detected to date.

astro-ph.HE

Buckling behavior of tenary one-dimensional van der Waals heterostructures

1D van der Waals heterostructures (1D vdWH) were recently reported to be successfully synthesized. We perform molecular dynamics simulations to investigate the buckling behavior of a 1D vdWH composed of inner carbon nanotube, a middle boron nitride nanotube and an outer molybdenum disulfide nanotube. We find that as the temperature increases, the 1D vdWH gradully loses its stability and the peak value of compressive stress decreases. Slenderness ratio have a slight influence on the strength and stability of 1D vdWH under axial compression.

physics.atom-ph

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics.

physics.app-ph

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ~1E5 A/W and detectivity (D*) of ~1E14 Jones have been achieved in several devices with different thickness under Pin of 53 uW/cm2 at VTG=-5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. Our results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.

physics.app-ph

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3E7 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

physics.app-ph

Coherent X-ray measurement of step-flow propagation during growth on polycrystalline thin film surfaces

The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flow is observed through measurement of the step-edge velocity in the late stages of growth after crystalline mounds have formed. We show that the step-edge velocity is coupled to the terrace length, and that there is a variation in the velocity from larger step spacing at the center of crystalline mounds to closely-spaced, more slowly propagating steps at their edges. The results extend theories of surface growth, since the behavior is consistent with surface evolution driven by processes that include surface diffusion, the motion of step-edges, and attachment at step edges with significant step-edge barriers.

cond-mat.mtrl-sci

Machine learning valence force field model

The valence force field (VFF) model is a concise physical interpretation of the atomic interaction in terms of the bond and angle variations in the explicit quadratic functional form, while the machine learning (ML) method is a flexible numerical approach to make predictions based on some pre-obtained training data without the need of any explicit functions. We propose a so-called ML-VFF model, by combining the clear physical essence of the VFF model and the numerical flexibility of the ML method. Instead of imposing any explicit functional forms for the atomic interaction, the ML-VFF model predicts the potential and force with the Gaussian regression approach. We take graphene as an example to illustrate the ability of the ML-VFF model to make accurate predictions with relatively low computational expenses. We also discuss some key advantages and drawbacks of the ML-VFF model.

physics.comp-ph

Modulation of thermal conductivity in single-walled carbon nanotubes by fullerene encapsulation: enhancement or reduction?

Fullerence encapsulation has been proven to be a powerful approach to enhance mechanical and electronic properties of the single-walled carbon nanotubes (SWCNTs). However, some discrepancies emerge in recent studies of the fullerence encapsulation effect on the thermal conductivity of SWCNTs. More specifically, most previous theoretical works predicted slightly enhancement of the thermal conductivity, but the recent experiment by Kodama et al. (Nat. Mat. 16, 892 (2017)) observed clear reduction of the thermal conductivity in SWCNTs by fullerence encapsulation. We perform molecular dynamics simulations to revisit this issue, by comparatively investigate the thermal conductivity of the SWCNT (n, n) and the corresponding peapod (n, n) with n = 8, 9, 10, and 11. We find that the fullerence encapsulation can reduce the thermal conductivity of narrower SWCNTs with n = 8 and 9, but it can slightly enhance the thermal conductivity of thicker SWCNTs with n = 10 and 11. The underlying mechanisms for these opposite effects are explored by analyzing the encapsulation induced structural deformation and the variation of the phonon dispersion of the SWCNT. We illustrate that the reduction effect observed in the recent experiment is related to the mechanism for reduction of the thermal conductivity for narrower SWCNTs here, while previous numerical works correspond to the enhancement effect for thicker SWCNTs found in the present work. Our findings shed lights on clarifying the discrepancy between previous numerical predictions and experimental observations on the effect of the fullerence encapsulation on the thermal conductivity of the SWCNT.

cond-mat.mtrl-sci

Mechanical behavior of composite double wall nanotubes from carbon and phosphorous

Black phosphorus is not stable when it is exposed to air. When covered or terminated by single layer carbon atoms, such as graphene carbon nanotube, it is more strongly protected in the rapid degradation than the bare black phosphorus. Moreover, due to weak interaction between phosphorus atoms in black phosphorene, the nanotube obtained by curling single layer black phosphorus is not as stable as a carbon nanotube at finite temperature. In present work, we recommend a new 1D material, i.e., composite double wall nanotubes from a black phosphorus nanotube with a CNT. The dynamic response of the composite DWNTs is simulated using molecular dynamics approach. The effects of such factors as temperature, slenderness and configurations of DWNTs are discussed. Comparing with a single wall BPNT, the composite DWNTs under uniaxial compression shows some peculiar properties. When the BPNT is embedded in a CNT, the system will not collapse rapidly even if the BPNT has been damaged seriously.

cond-mat.mtrl-sci

Thermal stability of a free nanotube from single-layer black phosphorus

Similar to the carbon nanotube fabricated from graphene sheet, a black phosphorus nanotube (BPNT) also can theoretically be produced by curling the rectangular single-layer black phosphorus (SLBP). In present study, the effect of thermal vibration of atoms on the failure of a BPNT is investigated using molecular dynamics simulations. Two types of double-shell BPNTs, which are obtained by curling the rectangular SLBP along its armchair/pucker direction and zigzag direction (in-plane normal) respectively, are involved in simulation. At finite temperature, a bond on the outer shell of tube is under tension due to both of curvature of tube and serious thermal vibration of atoms. As the length of a bond with such elongation approaches its critical value, i.e., 0.279 nm, or the smallest distance between two nonbonding phosphorus atoms is over 0.389nm caused by great variation of bond angle, the tube fails quickly. The critical stable states of either an armchair or a zigzag BPNT at finite temperature are calculated and compared. To achieve a stable BPNT with high robustness, the curvature of the tube should be reduced or the tube should work at a lower temperature. Only when the BPNT has structural stability, it has a potential application as a nanowire in a future nano electro-mechanical system (NEMS).

physics.comp-ph

Nucleation and strain-stabilization during organic semiconductor thin film deposition

The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135$^\circ$C.

cond-mat.mtrl-sci

Transient phases during fast crystallization of organic thin films from solution

We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature $>$60$^\circ$C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm$^2$/V-s has been observed.

cond-mat.mtrl-sci

Recurrence and Polya number of general one-dimensional random walks

The recurrence properties of random walks can be characterized by Pólya number, i.e., the probability that the walker has returned to the origin at least once. In this paper, we consider recurrence properties for a general 1D random walk on a line, in which at each time step the walker can move to the left or right with probabilities $l$ and $r$, or remain at the same position with probability $o$ ($l+r+o=1$). We calculate Pólya number $P$ of this model and find a simple expression for $P$ as, $P=1-Δ$, where $Δ$ is the absolute difference of $l$ and $r$ ($Δ=|l-r|$). We prove this rigorous expression by the method of creative telescoping, and our result suggests that the walk is recurrent if and only if the left-moving probability $l$ equals to the right-moving probability $r$.

math-ph