arXiv subjects

Jing Wen

Publications and source records attributed to Jing Wen.

25 records · Page 2Linked to original sources

arXiv2022

A multi view multi stage and multi window framework for pulmonary artery segmentation from CT scans

This is the technical report of the 9th place in the final result of PARSE2022 Challenge. We solve the segmentation problem of the pulmonary artery by using a two-stage method based on a 3D CNN network. The coarse model is used to locate the ROI, and the fine model is used to refine the segmentation result. In addition, in order to improve the segmentation performance, we adopt multi-view and multi-window level method, at the same time we employ a fine-tune strategy to mitigate the impact of inconsistent labeling.

eess.IV↗

arXiv2021

Track, Check, Repeat: An EM Approach to Unsupervised Tracking

We propose an unsupervised method for detecting and tracking moving objects in 3D, in unlabelled RGB-D videos. The method begins with classic handcrafted techniques for segmenting objects using motion cues: we estimate optical flow and camera motion, and conservatively segment regions that appear to be moving independently of the background. Treating these initial segments as pseudo-labels, we learn an ensemble of appearance-based 2D and 3D detectors, under heavy data augmentation. We use this ensemble to detect new instances of the "moving" type, even if they are not moving, and add these as new pseudo-labels. Our method is an expectation-maximization algorithm, where in the expectation step we fire all modules and look for agreement among them, and in the maximization step we re-train the modules to improve this agreement. The constraint of ensemble agreement helps combat contamination of the generated pseudo-labels (during the E step), and data augmentation helps the modules generalize to yet-unlabelled data (during the M step). We compare against existing unsupervised object discovery and tracking methods, using challenging videos from CATER and KITTI, and show strong improvements over the state-of-the-art.

cs.CV↗

arXiv2019

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

cond-mat.mes-hall↗

arXiv2015

Density-Matrix Renormalization Group Algorithm with Multi-Level Active Space

The density-matrix renormalization group (DMRG) method, which can deal with a large active space composed of tens of orbitals, is nowadays widely used as an efficient addition to traditional complete active space (CAS)-based approaches. In this paper, we present the DMRG algorithm with a multi-level (ML) control of the active space based on chemical intuition-based hierarchical orbital ordering, which is called as ML-DMRG with its self-consistent field variant ML-DMRG-SCF. Ground and excited state calculations of H2O, N2, indole, and Cr2 with comparisons to DMRG references using fixed number of kept states (M) illustrate that MLtype DMRG calculations can obtain noticeable efficiency gains. It is also shown that the orbital re-ordering based on hierarchical multiple active subspaces may be beneficial for reducing computational time for not only ML-DMRG calculations but also DMRG ones with fixed M values.

cond-mat.str-el↗

arXiv2012

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3

Searching for superconducting materials with high transition temperature (TC) is one of the most exciting and challenging fields in physics and materials science. Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with TC above 77 K, the liquid nitrogen boiling point. Here we report an interface engineering method for dramatically raising the TC of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

cond-mat.supr-con↗

arXiv2011

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.

cond-mat.mtrl-sci↗

arXiv2011

Experimental cross-polarization detection of coupling far-field light to highly confined plasmonic gap modes via nanoantennas

We experimentally demonstrate the coupling of far-field light to highly confined plasmonic gap modes via connected nanoantennas. The excitation of plasmonic gap modes is shown to depend on the polarization, position and wavelength of the incident beam. Far-field measurements performed in crossed polarization allow for the detection of extremely weak signals re-emitted from gap waveguides and can increase the signal-to-noise ratio dramatically.

physics.optics↗