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Jing-Kai Huang

Publications and source records attributed to Jing-Kai Huang.

7 recordsLinked to original sources

Quantum Kernel Learning for Small Dataset Modeling in Semiconductor Fabrication: Application to Ohmic Contact

Modeling complex semiconductor fabrication processes such as Ohmic contact formation remains challenging due to high-dimensional parameter spaces and limited experimental data. While classical machine learning (CML) approaches have been successful in many domains, their performance degrades in small-sample, nonlinear scenarios. In this work, we investigate quantum machine learning (QML) as an alternative, exploiting quantum kernels to capture intricate correlations from compact datasets. Using only 159 experimental GaN HEMT samples, we develop a quantum kernel-aligned regressor (QKAR) combining a shallow Pauli-Z feature map with a trainable quantum kernel alignment (QKA) layer. All models, including seven baseline CML regressors, are evaluated under a unified PCA-based preprocessing pipeline to ensure a fair comparison. QKAR consistently outperforms classical baselines across multiple metrics (MAE, MSE, RMSE), achieving a mean absolute error of 0.338 Omega mm when validated on experimental data. We further assess noise robustness and generalization through cross-validation and new device fabrication. These findings suggest that carefully constructed QML models could provide predictive advantages in data-constrained semiconductor modeling, offering a foundation for practical deployment on near-term quantum hardware. While challenges remain for both QML and CML, this study demonstrates QML's potential as a complementary approach in complex process modeling tasks.

cs.LG

Spin-Orbital Coupling in All-Inorganic Metal-Halide Perovskites: the Hidden Force that Matters

Highlighted with improved long-term thermal and environmental stability, all-inorganic metal halide perovskites exhibit tunable physical properties, cost-effective synthesis, and satisfactory optoelectronic performance, attracting increasing research interests worldwide. However, a less explored feature of these materials is their strong spin-orbit coupling (SOC), which is the hidden force influencing not only band structure but also properties including magnetoresistance, spin lifetime and singlet-triplet splitting. This review provides an overview of the fundamental aspects and the latest progress of the SOC and debate regarding Rashba effects in all-inorganic metal halide perovskites, providing critical insights into the physical phenomena and potential applications. Meanwhile, crystal structures and photophysics of all-inorganic perovskite are discussed in the context of SOC, along with the related experimental and characterization techniques. Furthermore, a recent understanding of the band topology in the all-inorganic halide perovskites is introduced to push the boundary even further for the novel applications of all-inorganic halide perovskites. Finally, an outlook is given on the potential directions of breakthroughs via leveraging the SOC in halide perovskites.

cond-mat.mtrl-sci

Relativistic effect of $J/ψ$ hadroproduction in large $p_T$ region

By combining NRQCD factorization and collinear factorization, we compute a series of relativistic corrections for $J/ψ$ hadroproduction to all orders in $v^2$ at large $p_T$ limit. The $v^2$ expansion converges well for all channels. We find that the ratio of relativistic correction term to the corresponding leading term is independent of kinematic variables for any channel, which generalizes the proportional relations found in previous works to all orders.

hep-ph

Disorder Dependent Valley Properties in Monolayer WSe2

We investigate the effect on disorder potential on exciton valley polarization and valley coherence in monolayer WSe2. By analyzing polarization properties of photoluminescence, the valley coherence (VC) and valley polarization (VP) is quantified across the inhomogeneously broadened exciton resonance. We find that disorder plays a critical role in the exciton VC, while minimally affecting VP. For different monolayer samples with disorder characterized by their Stokes Shift (SS), VC decreases in samples with higher SS while VP again remains unchanged. These two methods consistently demonstrate that VC as defined by the degree of linearly polarized photoluminescence is more sensitive to disorder potential, motivating further theoretical studies.

cond-mat.mtrl-sci

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions using the same materials with different thicknesses. Using scanning tunneling microscopy and spectroscopy, here we show the real space image of electronic structures across the bilayer-monolayer interface in MoSe2 and WSe2. Most bilayer-monolayer heterojunctions are found to have a zigzag-orientated interface, and the band alignment of such atomically sharp heterojunctions is of type-I with a well-defined interface mode which acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terrace as lateral heterojunctions is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

cond-mat.mtrl-sci

Large-Area Aiming Synthesis of WSe2 Monolayers

The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics and optoelectronic devices. Recent reports have demonstrated the growth of large-size 2-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown.

cond-mat.mtrl-sci

Ultrahigh-Gain Phototransistors Based on Graphene-MoS2 Heterostructures

Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction devices is limited by their small junction area, where the typical photoresponsivity is lower than 0.01 AW-1. On the other hand, the atomically thin layer of molybdenum disulfide (MoS2) is a two-dimensional (2d) nanomaterial with a direct and finite band gap, offering the possibility of acting as a 2d light absorber. The optoelectronic properties of the heterostructure of these two films is therefore of great interest. The growth of large-area graphene using chemical vapour deposition (CVD) has become mature nowadays. However, the growth of large-area MoS2 monolayer is still challenging. In this work, we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method. Both graphene and MoS2 layers are transferable onto desired substrates, making possible immediate and large-scale optoelectronic applications. We demonstrate that a phototransistor based on the graphene/MoS2 heterostructure is able to provide a high photoresponsivity greater than 107 A/W while maintaining its ultrathin and planar structure. Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the alignment of the graphene Fermi level with the conduction band of MoS2. The band alignment is sensitive to the presence of a perpendicular electric field arising from, for example, Coulomb impurities or an applied gate voltage, resulting in a tuneable photoresponsivity.

cond-mat.mtrl-sci