Jing-Kai Qin | Searcharxiv

arXiv2026

Unlocking Cryogenic Energy Storage by Constructing Dipole Glass with Unit-cell-level Polar Disorder

Cryogenic energy storage is vital for frontier technologies including deep-space exploration and quantum computing, yet conventional electrochemical energy systems fail below ~230 K due to frozen ion migration. While relaxor-based dielectric capacitors provide high efficiency at room temperature, the intrinsic freezing/growth of polar nanodomains at extended cryogenic regime limits their applications with deteriorated hysteresis losses. Here, we realize superior cryogenic energy-storage performance by designing unit-cell-level disordered dipole-glass state in Pb0.6Sr0.4ZrO3 thin films with composition near antiferroelectric-paraelectric phase boundary. The antiferroelectric-derived dipole-glass introduces enhanced unit-cell-level complexity of dipole interaction that suppresses long-range ferroelectric order. This enables ultralow-hysteresis operation (efficiency > 88%) down to 4 K, delivering record-high energy density (211 J/cm^3) at 9 MV/cm, stability over 10^8 charge/discharge cycles and microsecond-scale charge/discharge capability. This work establishes a dipole-glass paradigm for cryogenic dielectric capacitors, opening a new avenue to highly-efficient energy-storage systems with broad applications in frontier nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2020

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.

cond-mat.mes-hall↗