arXiv subjects

Jingdi Lu

Publications and source records attributed to Jingdi Lu.

8 recordsLinked to original sources

arXiv2026

Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures

The family of Hall effects has long served as a premier probe of how symmetry, magnetic order, and topology intertwine in solids. Recently, the in-plane anomalous Hall effect (IP-AHE), a transverse Hall response driven by in-plane magnetization, has emerged as a distinct member of this family, offering innovative spintronic functionalities and illuminating intricate interplay between mirror-symmetry breaking and in-plane magnetic order. However, practical routes to deterministically and reversibly control IP-AHE remain limited. Here, we establish a symmetry-engineered IP-AHE platform, CaRuO3/La2/3Ca1/3MnO3/CaRuO3 heterostructure on NdGaO3(110), that turns strict mirror-symmetry breaking constraints into effective tuning knobs. IP-AHE in these epitaxial trilayers unambiguously couples to the CaRuO3-buffer-induced mirror-symmetry breaking and faithfully reproduces the ferromagnetic hysteresis. Ionic liquid gating further enables reversible reconfigurations of the symmetry breaking, thereby achieving electrical modulation and ON/OFF switching of IP-AHE. This highly tunable IP-AHE platform opens pathways for exploring nontrivial magnetic order and developing programmable Hall functionalities in planar geometries.

cond-mat.str-el↗

arXiv2025

Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect

Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.

cond-mat.mtrl-sci↗

arXiv2025

Topotactic Reduction-Driven Crystal Field Excitations in Brownmillerite Manganite Thin Films

Topotactic reduction of perovskite oxides offers a powerful approach for discovering novel phenomena, such as superconducting infinite-layer nickelates and polar metallicity, and is commonly accompanied by the emergence of multiple valence states and/or complex crystal fields of transition metals. However, understanding the complex interplay between crystal chemistry, electronic structure, and physical properties at the spin- and orbital-resolved levels in these reduced systems remains elusive. Here, we combine x-ray absorption spectroscopy, resonant inelastic x-ray scattering (RIXS), and density functional theory calculations to uncover topotactic metal-insulator transition and orbital-specific crystal field excitations in brownmillerite La0.67Ca0.33MnO2.5 thin films. We reveal the Mn valence states to be predominantly Mn2+/Mn3+, along with their corresponding populations at octahedral and tetrahedral sites, which effectively weaken the Mn-O hybridization compared to the parent perovskite phase. As a result, La0.67Ca0.33MnO2.5 films exhibit an antiferromagnetic insulating ground state. Moreover, by combining the RIXS measurements on selected single-valence manganites, specifically MnO, LaMnO3, and CaMnO3, with orbital- and spin-resolved density-of-states calculations, we identify the dd excitations of octahedrally and tetrahedrally coordinated Mn2+/Mn3+ ions, directly linking the microscopic electronic structure to the macroscopic magnetic/electrical properties.

cond-mat.mtrl-sci↗

arXiv2023

Super-tetragonal Sr4Al2O7: a versatile sacrificial layer for high-integrity freestanding oxide membranes

Releasing the epitaxial oxide heterostructures from substrate constraints leads to the emergence of various correlated electronic phases and paves the way for integrations with advanced semiconductor technologies. Identifying a suitable water-soluble sacrificial layer, compatible with the high-quality epitaxial growth of oxide heterostructures, is currently the key to the development of large-scale freestanding oxide membranes. In this study, we unveil the super-tetragonal Sr4Al2O7 (SAOT) as a promising water-soluble sacrificial layer. The distinct low-symmetric crystal structure of SAOT enables a superior capability to sustain epitaxial strain, thus allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formations during the water-assisted release of freestanding oxide membranes. For a variety of non-ferroelectric oxide membranes, the crack-free areas can span up to a few millimeters in length scale. These compelling features, combined with the inherent high-water solubility, make SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative oxide electronics and flexible device designs.

cond-mat.mtrl-sci↗

arXiv2023

Highly Tunable Perpendicular Magnetic Anisotropy and Anisotropic Magnetoresistance in Ru-doped La0.67Sr0.33MnO3 Epitaxial Films

As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3 (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy (PMA) limits the controllability and detection of magnetism in LSMO, thus hindering the realization of oxide-based spintronic devices with low energy consumption and high integration level. Motivated by this challenge, we develop an experimental approach to enhance the PMA of LSMO epitaxial films. By cooperatively introducing 4d Ru doping and a moderate compressive strain, the maximum uniaxial magnetic anisotropy in Ru-doped LSMO can reach 3.0 to 1E5 J/m3 at 10 K. Furthermore, we find a significant anisotropic magnetoresistance effect in these Ru-doped LSMO films, which is dominated by the strong PMA. Our findings offer an effective pathway to harness and detect the orientations of magnetic moments in LSMO films, thus promoting the feasibility of oxide-based spintronic devices, such as spin valves and magnetic tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2023

Ru doping induced spin frustration and enhancement of the room-temperature anomalous Hall effect in La2/3Sr1/3MnO3 films

In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, we exploit the Ru doping-enhanced AHE in LSMRO epitaxial films. As the B-site Ru doping level increases up to 20 percent, the anomalous Hall resistivity at room temperature can be enhanced from nOhmcm to uOhmcm scale. Ru doping leads to strong competition between ferromagnetic double-exchange interaction and antiferromagnetic super-exchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. Our findings could pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

cond-mat.str-el↗

arXiv2019

Large Magnetoelectric Response in Sr2IrO4/SrTiO3 superlattices with non-equivalent interfaces

Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a concurrence of ferroelectric-like and antiferromagnetic phase transitions in Sr2IrO4/SrTiO3 superlattices by artificial design periodically non-equivalent interfaces, where a maximum magnetoelectric coefficient of ~980 mV cm-1 Oe-1 can be measured. Evidenced by synchrotron X-ray absorption and electron energy loss spectroscopies, a lopsided electron occupation occurs at the interfacial Ti ions. From perturbative calculations and numerical results, a strong coupling of antiferromagnetism and asymmetric electron occupation mediated by spin-orbit interaction leads to a large bulk magnetoelectric response. This atomic tailoring of the quantum order parameters in 3d and 5d oxides provides an alternative pathway towards strong magnetoelectric effects with thin-film integrations.

cond-mat.str-el↗