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Jingjing Niu

Publications and source records attributed to Jingjing Niu.

40 records · Page 3Linked to original sources

Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications

Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route for direct production of crystalline VS$_{2}$ nanosheets with sub-10 nm thicknesses and domain sizes of tens of micrometers. The obtained nanosheets feature spontaneous superlattice periodicities and excellent electrical conductivities (~3$\times$10$^{3}$ S cm$^{-1}$), which has enabled a variety of applications such as contact electrodes for monolayer MoS$_{2}$ with contact resistances of ~1/4 to that of Ni/Au metals, and as supercapacitor electrodes in aqueous electrolytes showing specific capacitances as high as 8.6$\times$10$^{2}$ F g$^{-1}$. This work provides fresh insights into the delicate structure-property relationship and the broad application prospects of such metallic 2D materials.

cond-mat.mtrl-sci↗

Electrical transport in nano-thick ZrTe$_5$ sheets: from three to two dimensions

ZrTe$_5$ is a newly discovered topological material. Shortly after a single layer ZrTe$_5$ had been predicted to be a two-dimensional topological insulator, a handful of experiments have been carried out on bulk ZrTe$_5$ crystals, which however suggest that its bulk form may be a three-dimensional topological Dirac semimetal. We report the first transport study on ultra thin ZrTe$_5$ flakes down to 10 nm. A significant modulation of the characteristic resistivity maximum in the temperature dependence by thickness has been observed. Remarkably, the metallic behavior, occurring only below about 150 K in bulk, persists to over 320 K for flakes less than 20 nm thick. Furthermore, the resistivity maximum can be greatly tuned by ionic gating. Combined with the Hall resistance, we identify contributions from a semiconducting and a semimetallic bands. The enhancement of the metallic state in thin flakes are consequence of shifting of the energy bands. Our results suggest that the band structure sensitively depends on the film thickness, which may explain the divergent experimental observations on bulk materials.

cond-mat.mtrl-sci↗

Electrical control of intervalley scattering in graphene via the charge state of defects

We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a potential by the long-range part. Experiments on calcium-adsorbed graphene confirm the role of a long-range Coulomb potential. This effect is applicable to other multivalley systems, provided that the charge state of a defect can be electrically tuned. Our result provides a means to electrically control valley relaxation and has important implications in valley dynamics in valleytronic materials.

cond-mat.mes-hall↗

Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms

Enhancement of the spin-orbit coupling in graphene may lead to various topological phenomena and also find applications in spintronics. Adatom absorption has been proposed as an effective way to achieve the goal. In particular, great hope has been held for indium in strengthening the spin-orbit coupling and realizing the quantum spin Hall effect. To search for evidence of the spin-orbit coupling in graphene absorbed with indium adatoms, we carry out extensive transport measurements, i.e., weak localization magnetoresistance, quantum Hall effect and non-local spin Hall effect. No signature of the spin-orbit coupling is found. Possible explanations are discussed.

cond-mat.mes-hall↗