arXiv subjects

Jingjing Shi

Publications and source records attributed to Jingjing Shi.

At least 37 records · Page 2Linked to original sources

arXiv2021

Experimental Observation of Localized Interfacial Phonon Modes

Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion.

cond-mat.mes-hall↗

arXiv2021

Mass and Environment as Drivers of Galaxy Evolution. IV. On the Quenching of Massive Central Disk Galaxies in The Local Universe

The phenomenological study of evolving galaxy populations has shown that star forming galaxies can be quenched by two distinct processes: mass quenching and environment quenching (Peng et al. 2010). To explore the mass quenching process in local galaxies, we study the massive central disk galaxies with stellar mass above the Schechter characteristic mass. In Zhang et al. (2019), we showed that during the quenching of the massive central disk galaxies as their star formation rate (SFR) decreases, their molecular gas mass and star formation efficiency drop rapidly, but their HI gas mass remains surprisingly constant. To identify the underlying physical mechanisms, in this work we analyze the change during quenching of various structure parameters, bar frequency, and active galactic nucleus (AGN) activity. We find three closely related facts. On average, as SFR decreases in these galaxies: (1) they become progressively more compact, indicated by their significantly increasing concentration index, bulge-to-total mass ratio, and central velocity dispersion, which are mainly driven by the growth and compaction of their bulge component; (2) the frequency of barred galaxies increases dramatically, and at a given concentration index the barred galaxies have a significantly higher quiescent fraction than unbarred galaxies, implying that the galactic bar may play an important role in mass quenching; and (3) the "AGN" frequency increases dramatically from 10% on the main sequence to almost 100% for the most quiescent galaxies, which is mainly driven by the sharp increase of LINERs. These observational results lead to a self-consistent picture of how mass quenching operates.

astro-ph.GA↗

arXiv2021

Phonon heat conduction in Al1-xScxN thin films

Aluminum scandium nitride alloy (Al1-xScxN) is regarded as a promising material for high-performance acoustic devices used in wireless communication systems. Phonon scattering and heat conduction processes govern the energy dissipation in acoustic resonators, ultimately determining their performance quality. This work reports, for the first time, on phonon scattering processes and thermal conductivity in Al1-xScxN alloys with the Sc content (x) up to 0.26. The thermal conductivity measured presents a descending trend with increasing x. Temperature-dependent measurements show an increase in thermal conductivity as the temperature increases at temperatures below 200K, followed by a plateau at higher temperatures (T> 200K). Application of a virtual crystal phonon conduction model allows us to elucidate the effects of boundary and alloy scattering on the observed thermal conductivity behaviors. We further demonstrate that the alloy scattering is caused mainly by strain-field difference, and less by the atomic mass difference between ScN and AlN, which is in contrast to the well-studied Al1-xGaxN and SixGe1-x alloy systems where atomic mass difference dominates the alloy scattering. This work studies and provides the quantitative knowledge for phonon scattering and the thermal conductivity in Al1-xScxN, paving the way for future investigation of materials and design of acoustic devices.

cond-mat.mtrl-sci↗

arXiv2021

Quasi-Ballistic Thermal Conduction in 6H-SiC

The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature dependent thermal conductivity of doped epitaxial 6H-SiC and monocrystalline porous 6H-SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Doping and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H-SiC compared to the epitaxial 6H-SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H-SiC and will impact applications such as thermal management of 6H-SiC-related electronics and devices.

cond-mat.mtrl-sci↗

arXiv2021

Power Spectrum of Intrinsic Alignments of Galaxies in IllustrisTNG

We present the 3-{\it dimensional} intrinsic alignment power spectra between the projected 2d galaxy shape/spin and the 3d tidal field across $0.1<k/h{\rm Mpc}^{-1}<60$ using cosmological hydrodynamical simulation, Illustris-TNG300, at redshifts ranging from $0.3$ to $2$. The shape-tidal field alignment increases with galaxy mass and the linear alignment coefficient $A_{\rm IA}$, defined with respect to the primordial tidal field, is found to have weak redshift dependence. We also show a promising detection of the shape/spin-tidal field alignments for stellar mass limited samples and a weak or almost null signal for star-forming galaxies for the TNG300 volume, $\sim 0.01~(h^{-1}{\rm Gpc})^3$. We further study the morphology and environmental dependence of the intrinsic alignment power spectra. The shape of massive disk- and spheroid-galaxies tend to align with the tidal field. The spin of low mass disks (and spheroids at low redshifts) tend to be parallel with the tidal field, while the spin of massive spheroids and disks tend to be perpendicular to tidal field. The shape and spin of massive centrals align with the tidal field at both small and large scales. Satellites show a radial alignment within the one-halo term region, and low mass satellites have an intriguing alignment signal in the two-halo term region. We also forecast a feasibility to measure the intrinsic alignment power spectrum for spectroscopic and imaging surveys such as Subaru HSC/PFS and DESI. Our results thus suggest that galaxy intrinsic alignment can be used as a promising tool for constraining the galaxy formation models.

astro-ph.GA↗

arXiv2020

A comparative study of satellite galaxies in Milky Way-like galaxies from HSC, DECaLS and SDSS

We conduct a comprehensive and statistical study of the luminosity functions (LFs) for satellite galaxies, by counting photometric galaxies from HSC, DECaLS and SDSS around isolated central galaxies (ICGs) and paired galaxies from the SDSS/DR7 spectroscopic sample. Results of different surveys show very good agreement. The satellite LFs can be measured down to $M_V\sim-10$, and for central primary galaxies as small as $8.5<\log_{10}M_\ast/M_\odot<9.2$ and $9.2<\log_{10}M_\ast/M_\odot<9.9$, implying there are on average 3--8 satellites with $M_V<-10$ around LMC-mass ICGs. The bright end cutoff of satellite LFs and the satellite abundance are both sensitive to the magnitude gap between the primary and its companions, indicating galaxy systems with larger magnitude gaps are on average hosted by less massive dark matter haloes. By selecting primaries with stellar mass similar to our MW, we discovered that i) the averaged satellite LFs of ICGs with different magnitude gaps to their companions and of galaxy pairs with different colour or colour combinations all show steeper slopes than the MW satellite LF; ii) there are on average more satellites with $-15 -12$. Hence the MW and its satellite system are statistically atypical of our sample of MW-mass systems. In consequence, our MW is not a good representative of other MW-mass galaxies. Strong cosmological implications based on only MW satellites await additional discoveries of fainter satellites in extra-galactic systems. Interestingly, the MW satellite LF is typical among other MW-mass systems within 40~Mpc in the local Universe, perhaps implying the Local Volume is an under-dense region.

astro-ph.GA↗

arXiv2020

Barred Galaxies in the IllustrisTNG Simulation

Almost two-thirds of disk galaxies in the local universe host bars, which serve as important drivers of secular evolutionary processes. While cosmological simulations are powerful tools to study the formation and evolution of galaxies, they have often struggled to generate reasonable bar populations. We measure the fraction, size, and strength of bars in 3866 disk galaxies from the TNG100 run of the advanced cosmological simulation IllustrisTNG. Consistent with observations, about 55% of disk galaxies with stellar mass $M_* \approx 10^{10.6}\, M_\odot$ are barred, and the relation between bar size and total stellar mass is similar to that found in near-infrared surveys. However, the formation of bars is suppressed in galaxies with $M_* < 10^{10.6}\, M_\odot$, which may result from the difficulty TNG100 has in resolving short bars with radius <1.4 kpc. In contrast, up to 75% of massive disk galaxies with $M_* > 10^{10.6}\, M_\odot$ have bars, ~10%-20% higher than observed. TNG100 overproduces relatively short bars (radius ~1.4-3 kpc) with respect to the mass-bar size relation observed in near-infrared surveys. Tracing the progenitors of z=0 massive galaxies we find that the bar fraction increases from 25% to 63% between z=1 and 0. Instead if we select all disk galaxies during z=0-1 with a constant mass cut of $M_* \geqslant 10^{10.6}\, M_\odot$ we find that the bar fraction is a nearly constant 60%.

astro-ph.GA↗

arXiv2020

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices.

physics.app-ph↗

arXiv2020

The Formation History of Subhalos and the Evolution of Satellite Galaxies

Satellites constitute an important fraction of the overall galaxy population and are believed to form in dark matter subhalos. Here we use the cosmological hydrodynamic simulation TNG100 to investigate how the formation histories of subhalos affect the properties and evolution of their host galaxies. We use a scaled formation time ($a_{\rm nf}$) to characterize the mass assembly histories of the subhalos before they are accreted by massive host halos. We find that satellite galaxies in young subhalos (low $a_{\rm nf}$) are less massive and more gas rich, and have stronger star formation and a higher fraction of ex situ stellar mass than satellites in old subhalos (high $a_{\rm nf}$). Furthermore, these low $a_{\rm nf}$ satellites require longer timescales to be quenched as a population than the high $a_{\rm nf}$ counterparts. We find very different merger histories between satellites in fast accretion (FA, $a_{\rm nf}<1.3$) and slow accretion (SA, $a_{\rm nf}>1.3$) subhalos. For FA satellites, the galaxy merger frequency dramatically increases just after accretion, which enhances the star formation at accretion. While, for SA satellites, the mergers occur smoothly and continuously across the accretion time. Moreover, mergers with FA satellites happen mainly after accretion, while a contrary trend is found for SA satellites. Our results provide insight into the evolution and star formation quenching of the satellite population.

astro-ph.GA↗

arXiv2019

Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. Büttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the Büttiker probes can reliably predict phonon transport across interfaces and at finite temperatures.

physics.app-ph↗

arXiv2019

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

cond-mat.mtrl-sci↗

arXiv2019

X-shaped Radio Galaxies: Optical Properties, Large-scale Environment and Relationship to Radio Structure

In order to find clues to the origin of the "winged" or "X-shaped" radio galaxies (XRGs) we investigate here the parent galaxies of a large sample of 106 XRGs for optical-radio axes alignment, interstellar medium, black hole mass, and large-scale environment. For 41 of the XRGs it was possible to determine the optical major axis and the primary radio axis and the strong tendency for the two axes to be fairly close is confirmed. However, several counter-examples were also found and these could challenge the widely discussed backflow diversion model for the origin of the radio wings. Comparison with a well-defined large sample of normal FR II radio galaxies has revealed that: (i) XRGs possess slightly less massive central black holes than the normal radio galaxies (average masses being log$M_{\rm BH} \sim$ 8.81 $M_{\odot}$ and 9.07 $M_{\odot}$, respectively); (ii) a much higher fraction of XRGs ($\sim$ 80%) exhibits red mid-IR colors ($W2 - W3 > 1.5$), indicating a population of young stars and/or an enhanced dust mass, probably due to relatively recent galaxy merger(s). A comparison of the large-scale environment (i.e., within $\sim$ 1 Mpc) shows that both XRGs and FRII radio galaxies inhabit similarly poor galaxy clustering environments (medium richness being 8.94 and 11.87, respectively). Overall, the origin of XRGs seems difficult to reconcile with a single dominant physical mechanism and competing mechanisms seem prevalent.

astro-ph.GA↗

arXiv2019

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.

physics.app-ph↗

arXiv2019

Identifying kinematic structures in simulated galaxies using unsupervised machine learning

Galaxies host a wide array of internal stellar components, which need to be decomposed accurately in order to understand their formation and evolution. While significant progress has been made with recent integral-field spectroscopic surveys of nearby galaxies, much can be learned from analyzing the large sets of realistic galaxies now available through state-of-the-art hydrodynamical cosmological simulations. We present an unsupervised machine learning algorithm, named auto-GMM, based on Gaussian mixture models, to isolate intrinsic structures in simulated galaxies based on their kinematic phase space. For each galaxy, the number of Gaussian components allowed by the data is determined through a modified Bayesian information criterion. We test our method by applying it to prototype galaxies selected from the cosmological simulation IllustrisTNG. Our method can effectively decompose most galactic structures. The intrinsic structures of simulated galaxies can be inferred statistically by non-human supervised identification of galaxy structures. We successfully identify four kinds of intrinsic structures: cold disks, warm disks, bulges, and halos. Our method fails for barred galaxies because of the complex kinematics of particles moving on bar orbits.

astro-ph.GA↗

arXiv2019

The FRB 121102 host is atypical among nearby FRBs

We search for host galaxy candidates of nearby fast radio bursts (FRBs), FRB 180729.J1316+55, FRB 171020, FRB 171213, FRB 180810.J1159+83, and FRB 180814.J0422+73 (the second repeating FRB). We compare the absolute magnitudes and the expected host dispersion measure $\rm DM_{host}$ of these candidates with that of the first repeating FRB, FRB 121102, as well as those of long gamma ray bursts (LGRBs) and superluminous supernovae (SLSNe), the proposed progenitor systems of FRB 121102. We find that while the FRB 121102 host is consistent with those of LGRBs and SLSNe, the nearby FRB host candidates, at least for FRB 180729.J1316+55, FRB 171020, and FRB180814.J0422+73, either have a smaller $\rm DM_{host}$ or are fainter than FRB121102 host, as well as the hosts of LGRBs and SLSNe. In order to avoid the uncertainty in estimating $\rm DM_{host}$ due to the line-of-sight effect, we propose a galaxy-group-based method to estimate the electron density in the inter-galactic regions, and hence, $\rm DM_{IGM}$. The result strengthens our conclusion. We conclude that the host galaxy of FRB 121102 is atypical, and LGRBs and SLSNe are likely not the progenitor systems of at least most nearby FRB sources. {The recently reported two FRB hosts differ from the host of FRB 121102 and also the host candidates suggested in this paper. This is consistent with the conclusion of our paper and suggests that the FRB hosts are very diverse. }

astro-ph.HE↗

arXiv2019

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency devices. Similar to the method of cooling GaN-based high electron mobility transistors by integrating it with high thermal conductivity diamond substrates, this work studies the possibility of heterogeneous integration of Ga2O3 with diamond for thermal management of Ga2O3 devices. In this work, Ga2O3 was deposited onto single crystal diamond substrates by ALD and the thermal properties of ALD-Ga2O3 thin films and Ga2O3-diamond interfaces with different interface pretreatments were measured by TDTR. We observed very low thermal conductivity of these Ga2O3 thin films due to the extensive phonon grain boundary scattering resulting from the nanocrystalline nature of the Ga2O3 film. However, the measured thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces are about 10 times larger than that of the Van der Waals bonded Ga2O3 diamond interfaces, which indicates the significant impact of interface bonding on TBC. Furthermore, the TBC of the Ga-rich and O-rich Ga2O3-diamond interfaces are about 20% smaller than that of the clean interface, indicating interface chemistry affects interfacial thermal transport. Overall, this study shows that a high TBC can be obtained from strong interfacial bonds across Ga2O3-diamond interfaces, providing a promising route to improving the heat dissipation from Ga2O3 devices.

physics.app-ph↗

arXiv2019

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.

physics.app-ph↗

arXiv2019

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to GaN/AlGaN interfaces, beta-(AlxGa1-x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas (2DEG) where joule heating is localized. The thermal properties of beta-(AlxGa1-x)2O3/Ga2O3 are the key for heat dissipation in these devices while they have not been studied before. This work reports the first measurement on thermal conductivity of beta-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature comparing with that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of beta-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices.

physics.app-ph↗