arXiv subjects

Jingshan Qi

Publications and source records attributed to Jingshan Qi.

15 recordsLinked to original sources

arXiv2026

Imaging the Néel Vector in Two-Dimensional Antiferromagnets using Antisymmetric Compton Scattering

We demonstrate that antisymmetric Compton scattering can detect both the switching and the continuous rotation of the Néel vector in two-dimensional (2D) antiferromagnets. By probing magnetoelectric (ME) multipoles, which couple electric and magnetic dipoles, this approach overcomes the limitations of conventional techniques that rely on a finite net magnetization. Using a group-theoretical decomposition of the staggered moments in 2D MnPS$_3$ into irreducible representations, combined with first-principles calculations, we show that the antisymmetric Compton profile (ACP) is highly sensitive to the Néel vector orientation: it reverses sign under Néel vector reversal and exhibits distinct anisotropies under in-plane rotation. These results establish the ACP as a versatile probe of antiferromagnetic (AFM) order and magnetoelectric phenomena in van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2025

Pure momentum-shift bulk photovoltaic effect in ferroelectric flat-band Mott insulators

The shift current photovoltaic effect is conventionally understood as the real-space displacement of a wave packet induced by photoexcitation. However, this interpretation becomes insufficient in flat-band systems, where quasiparticles are too massive to accelerate in real space under the optical electric field. Here, we developed a physically consistent method to decompose the shift current into real-space and momentum-space components. A surprising pure momentum-space shift current is found theoretically in flat-band Mott insulator Nb$_3$X$_8$ (X = Cl, Br, I) monolayers. This work underscores that significant shift current responses can emerge even in systems with minimal interband polarization differences, highlighting the potential for exploring novel bulk photovoltaic effects in flat-band Mott insulators.

cond-mat.mtrl-sci↗

arXiv2024

One-dimensional Multiferroic Semiconductor WOI3: Unconventional Anisotropic d^1 Rule and Bulk Photovoltaic Effect

The pursuit of multiferroic magnetoelectrics, combining simultaneous ferroelectric and magnetic orders, remains a central focus in condensed matter physics. Here we report the centrosymmetric, one-dimensional (1D) antiferromagnetic WOI$_3$ undergoes a strain-induced ferroelectric distortion. The paraelectric-ferroelectric transition is originated from the unconventional anisotropic $d^1$ mechanism, where an unpaired d electron of each W$^{5+}$ ion contributes to magnetic orders. Employing a Heisenberg model with Dzyaloshinskii-Moriya interaction, we predict an antiferromagnetic spin configuration as the paraelectric ground state, transitioning to a ferroelectric phase with noncollinear spin arrangement under uniaxial strain. The ferroelectric polarization and noncollinear spin arrangement can be manipulated by varying the applied strain. While the energy barriers for switching ferroelectric polarizations with magnetic orders are on the order of a few dozen of meV, the shift current bulk photovoltaic effect (BPVE) exhibits remarkable differences, providing a precise and valuable tool for experimentally probing the interplay of ferroelectric and magnetic orders in 1D WOI$_3$.

cond-mat.mtrl-sci↗

arXiv2023

Polar discontinuities and interfacial electronic properties of Bi$_2$O$_2$Se on SrTiO$_3$

The layered oxychalcogenide semiconductor Bi$_2$O$_2$Se (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattice constants, the perovskite oxide SrTiO$_3$ (STO) has been demonstrated to be an excellent substrate for wafer-scale growth of atomically thin BOS films. However, the structural and electronic properties of the BOS/STO interface remain poorly understood. Here, through first-principles study, we reveal that polar discontinuities and interfacial contact configurations have a strong impact on the electronic properties of ideal BOS/STO interfaces. The lowest-energy [Bi-TiO$_2$] contact type, which features the contact between a Bi$_2$O$_2$ layer of BOS with the TiO$_2$-terminated surface of STO, incurs significant interfacial charge transfer from BOS to STO, producing a BOS/STO-mixed, $n$-type metallic state at the interface. By contrast, the [Se-SrO] contact type, which is the most stable contact configuration between BOS and SrO-terminated STO substrate, has a much smaller interfacial charge transfer from STO to BOS and exhibits $p$-type electronic structure with much weaker interfacial hybridization between BOS and STO. These results indicate that BOS grown on TiO$_2$-terminated STO substrates could be a fruitful system for exploring emergent phenomena at the interface between an oxychalcogenide and an oxide, whereas BOS grown on SrO-terminated substrates may be more advantageous for preserving the excellent intrinsic transport properties of BOS.

cond-mat.mtrl-sci↗

arXiv2023

Flat-band spin density wave in twisted bilayer materials

Twisting is a novel technique for creating strongly correlated effects in two-dimensional bilayered materials, and can tunably generate nontrivial topological properties, magnetism, and superconductivity. Magnetism is particularly significant as it can both compete with superconductivity and lead to the emergence of nontrivial topological states. However, the origin of magnetism in twisted structures remains a subject of controversy. Using self-developed large-scale electronic structure calculations, we propose the magnetism in these twisted bilayer systems originates from spin splitting induced by the enhanced ratio of the exchange interaction to band dispersion.

cond-mat.str-el↗

arXiv2020

Electrically-Tunable High Curie Temperature Two-Dimensional Ferromagnetism in Van der Waals Layered Crystals

Identifying intrinsic low-dimensional ferromagnets with high transition temperature and electrically tunable magnetism is crucial for the development of miniaturized spintronics and magnetoelectrics. Recently long-range 2D ferromagnetism was observed in van der Waals crystals CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, however their Curie temperature is significantly lowered when reducing down to monolayer/few layers. Herein, using renormalized spin-wave theory and first-principles electronic structure theory, we present a theoretical study of electrically tunable 2D ferromagnetism in van der Waals layered CrSBr and CrSeBr semiconductors with high Curie temperature of ~150K and sizable band gap. High transition temperature is attributed to strong anion-mediated superexchange interaction and a sizable spin-wave excitation gap due to large exchange and single-ion anisotropy. Remarkably, hole and electron doping can switch magnetization easy axis from in-plane to out-of-plane direction. These unique characteristics establish monolayer CrSBr and CrSeBr as promising platform for realizing 2D spintronics and magnetoelectrics such as 2D spin field effect transistor.

cond-mat.mtrl-sci↗

arXiv2018

Two-Dimensional Multiferroic Semiconductors with Coexisting Ferroelectricity and Ferromagnetism

Low-dimensional multiferroicity, though highly scarce in nature, has attracted great attention due to both fundamental and technological interests. Using first-principles density functional theory, we show that ferromagnetism and ferroelectricity can coexist in monolayer transition metal phosphorus chalcogenides (TMPCs) - CuMP$_2$X$_6$ (M=Cr, V; X=S, Se). These van der Waals layered materials represent a class of 2D multiferroic semiconductors that simultaneously possess ferroelectric and ferromagnetic orders. In these monolayer materials, Cu atoms spontaneously move away from the center atomic plane, giving rise to nontrivial electric dipole moment along the plane normal. In addition, their ferromagnetism originates from indirect exchange interaction between Cr/V atoms, while their out-of-plane ferroelectricity suggests the possibility of controlling electric polarization by external vertical electric field. Monolayer semiconducting TMPCs thus provide a solid-state 2D materials platform for realizing 2D nanoscale switches and memory devices patterned with top and bottom electrodes.

cond-mat.mtrl-sci↗

arXiv2018

Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information processing industry. Creation of permanent valley polarization, i.e. unbalanced occupation at different valleys, is a chief challenge and also urgent question to be solved in valleytronics. Here we predict that the spin-orbit coupling and magnetic ordering allow spontaneous valley Zeeman-type splitting in pristine monolayer of VAgP2Se6 by using first-principles calculations. The Zeeman-type valley splitting can lead to permanent valley polarization after suitable doping. The Zeeman-type valley splitting is similar to the role of spin polarization in spintronics and is a vital requirement for practical devices in valleytronics. The nonequivalent valleys of VAgP2Se6 monolayer can emit or absorb circularly polarized photons with opposite chirality, and thus this material shows a great potential to work as a photonic spin filter and circularly-polarized-light resource. A valley pseudospin field effect transistor (VPFET) is designed based on the monolayer VAgP2Se6 akin to the spin field effect transistors. Beyond common transistors, VPFETs carry information of not only the electrons but also the valley pseudospins.

cond-mat.mtrl-sci↗

arXiv2017

Magnetoconductivity of type-II Weyl semimetals

Type-II Weyl semimetals are characterized by the tilted linear dispersion in the low-energy excitations, mimicking Weyl fermions but with manifest violation of the Lorentz invariance, which has intriguing quantum transport properties. The magnetoconductivity of type-II Weyl semimetals is investigated numerically based on lattice models in parallel electric and magnetic field. We show that in the high-field regime, the sign of the magnetoconductivity of an inversion-symmetry-breaking type-II Weyl semimetals depends on the direction of the magnetic field, whereas in the weak field regime, positive magnetoconductivity is always obtained regardless of magnetic field direction. We find that the weak localization is sensitive to the spatial extent of impurity potential. In time-reversal symmetry breaking type-II Weyl semimetals, the system displays either positive or negative magnetoconductivity along the direction of band tilting, owing to the associated effect of group velocity, Berry curvature and the magnetic field.

cond-mat.mes-hall↗

arXiv2017

Electric control of the edge magnetization in zigzag stanene nanoribbon

There has been tremendous interest in manipulating electron and hole-spin states in low-dimensional structures for electronic and spintronic applications. We study the edge magnetic coupling and anisotropy in zigzag stanene nanoribbons, by first-principles calculations. Taking into account considerable spin-orbit coupling and ferromagnetism at each edge, zigzag stanene nanoribbon is insulating and its band gap depends on the inter-edge magnetic coupling and the magnetization direction. Especially for nanoribbon edges with out-of-plane antiferromagnetic coupling, two non-degenerate valleys of edge states emerge and the spin degeneracy is tunable by a transverse electric field, which give full play to spin and valley degrees of freedom. More importantly, both the magnetic order and anisotropy can be selectively controlled by electron and hole doping, demonstrating a readily accessible gate-induced modulation of magnetism. These intriguing features offer a practical avenue for designing energy-efficient devices based on multiple degrees of freedom of electron and magneto-electric couplings.

cond-mat.mtrl-sci↗

arXiv2016

Valley splitting in the transition-metal dichalcogenides monolayer via atoms adsorption

In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed to the monolayer surface. Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous charge, spin and valley Hall Effects can be accessed due to valley splitting when we can only excite carriers of one valley. The valley splitting depends on the direction of magnetization and thus can be tuned continuously by an external magnetic field. This tunable valley splitting offers a practical avenue for exploring device paradigms based on the spin and valley degrees of freedom.

cond-mat.mtrl-sci↗

arXiv2016

On the quantum spin Hall gap of monolayer 1T'-WTe2

Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum computations. Presently, realization of such QSH-based devices are limited to complicated heterostructures. Monolayer 1T'-WTe2 was predicted to be semimetallic QSH materials, though with a negative band gap. The quasi-particle spectrum obtained using hybrid functional approach shows directly that the quantum spin Hall gap is positive for monolayer 1T'-WTe2. Optical measurement shows a systematic increase in the interband relaxation time with decreasing number of layers, whereas transport measurement reveals Schottcky barrier in ultrathin samples, which is absent for thicker samples. These three independent pieces of evidence indicate that monolayer 1T'-WTe2 is likely a truly 2-dimensional quantum spin Hall insulator.

cond-mat.mtrl-sci↗

arXiv2015

The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene

Artificial monolayer black phosphorus, the so-called phosphorene has attracted global interest with its distinguished anisotropic optoelectronic and electronic properties. Here, we unraveled the shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene based on first-principles calculations. Lattice dynamic analysis demonstrated that phosphorene can sustain up to 10% applied shear strain. The band gap of phosphorene experiences a direct to indirect transition when 5% shear strain is applied. The electronic origin of direct to indirect gap transition from 1.54 eV at ambient condition to 1.22 eV at 10% shear strains for phosphorene was explored and the anisotropy diminution in phosphorene is discussed by calculating the maximum sound velocities, effective mass and decomposed charge density, which signals the undesired shear-induced direct to indirect gap transition in the applications of phosphorene for electronics and optoelectronics. On the other hand, the shear-induced electronic anisotropy properties suggest that phosphorene can be applied as the switcher in the nano electronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Giant and tunable valley degeneracy splitting in MoTe2

Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley polarization, however, is limited by carrier lifetimes of these materials. Lifting the valley degeneracy is therefore an attractive route for achieving valley polarization. It is very challenging to achieve appreciable valley degeneracy splitting with applied magnetic field. We propose a strategy to create giant splitting of the valley degeneracy by proximity-induced Zeeman effect. As a demonstration, our first principles calculations of monolayer MoTe$_2$ on a EuO substrate show that valley splitting over 300 meV can be generated. The proximity coupling also makes interband transition energies valley dependent, enabling valley selection by optical frequency tuning in addition to circular polarization. The valley splitting in the heterostructure is also continuously tunable by rotating substrate magnetization. The giant and tunable valley splitting adds a readily accessible dimension to the valley-spin physics with rich and interesting experimental consequences, and offers a practical avenue for exploring device paradigms based on the intrinsic degrees of freedom of electrons.

cond-mat.mtrl-sci↗

arXiv2014

Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst

Phosphorene has been attracted intense interest due to its unexpected high carrier mobility and distinguished anisotropic optoelectronic and electronic properties. In this work, we unraveled strain engineered phosphorene as a photocatalyst in the application of water splitting hydrogen production based on density functional theory calculations. Lattice dynamic calculations demonstrated the stability for such kind of artificial materials under different strains. The phosphorene lattice is unstable under compression strains and could be crashed. Whereas, phosphorene lattice shows very good stability under tensile strains. Further guarantee of the stability of phosphorene in liquid water is studied by ab initio molecular dynamics simulations. Tunable band gap from 1.54 eV at ambient condition to 1.82 eV under tensile strains for phosphorene is evaluated using parameter-free hybrid functional calculations. Appropriate band gaps and band edge alignments at certain pH demonstrate the potential application of phosphorene as a sufficiently efficient photocatalyst for visible light water splitting. We found that the strained phosphorene exhibits significantly improved photocatalytic properties under visible-light irradiation by calculating optical absorption spectra. Negative splitting energy of absorbed H2O indicates the water splitting on phosphorene is energy favorable both without and with strains.

cond-mat.mtrl-sci↗