arXiv subjects

Jingsi Qiao

Publications and source records attributed to Jingsi Qiao.

17 recordsLinked to original sources

arXiv2025

Anomalous charge density wave in altermagnetism

Exploring the intricate interplay between magnetism and charge density waves has long been a fundamental pursuit at the forefront of condensed matter research. In this letter, based on symmetry analysis and first-principles calculations, we propose for the first time that anomalous charge density wave can be realized in two-dimensional altermagnetic WO. The anomalous charge density wave is characterized by three key features: (i) Unlike conventional charge density wave, whose stabilization is driven by the opening of a gap near the Fermi level, the anomalous charge density wave is stabilized by the occupied states with energies shifting lower far away from the Fermi level; (ii) the anomalous charge density wave increases the density of states near the Fermi level and then enhances-rather than diminishes-the metallicity of materials; (iii) altermagnetism plays a crucial role in stabilizing anomalous charge density wave. Thus, our work offers a pathway for exploring both the realization and the underlying mechanisms of anomalous charge density waves in magnetic systems.

cond-mat.mtrl-sci↗

arXiv2025

Kagome electronic states in gradient-strained untwisted graphene bilayers

Moiré superlattices in twisted homo-bilayers have revealed exotic electronic states, including unconventional superconductivity and correlated insulating phases. However, their fabrication process often introduces moiré disorders, hindering reproducibility and experimental control. Here, we propose an alternative approach using gradient strain to construct moiré superlattices in untwisted bilayer graphene (gs-BLG). Through force-field and first-principles calculations, we show that gs-BLG exhibits kagome-like interlayer-spacing distributions and strain-tunable kagome electronic bands. The competition between interlayer coupling and in-plane strain relaxation leads to distinct structural deformations, giving rise to three forms of diatomic kagome lattices: subtle, pronounced, and distorted. Kagome electronic bands are identified near the Fermi level in their band structures. Modulating strain gradients enables tailoring bandwidths and signs of hopping parameters of these kagome bands, providing a versatile platform for studying exotic electronic phases. Our findings establish gradient strain as an alternative to twist engineering, opening an avenue for exploring emergent electronic phases in graphene-based systems.

cond-mat.mes-hall↗

arXiv2024

Unusual charge density wave introduced by Janus structure in monolayer vanadium dichalcogenides

As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.

cond-mat.mtrl-sci↗

arXiv2023

Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering

Negative Poisson's ratio as the anomalous characteristic generally exists in artificial architectures, such as re-entrant and honeycomb structures. The structures with negative Poisson's ratio have attracted intensive attention due to their unique auxetic effect and many promising applications in shear resistant and energy absorption fields. However, experimental observation of negative Poisson's ratio in natural materials barely happened, although various two-dimensional layered materials are predicted in theory. Herein, we report the anisotropic Raman response and the intrinsic intralayer negative Poisson's ratio of two-dimensional natural black arsenic (b-As) via strain engineering strategy. The results were evident by the detailed Raman spectrum of b-As under uniaxial strain together with density functional theory calculations. It is found that b-As was softer along the armchair than zigzag direction. The anisotropic mechanical features and van der Waals interactions play essential roles in strain-dependent Raman shifts and negative Poisson's ratio in the natural b-As along zigzag direction. This work may shed a light on the mechanical properties and potential applications of two-dimensional puckered materials.

cond-mat.mtrl-sci↗

arXiv2023

Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization

Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface, which are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome lattice materials using conventional surface deposition techniques.

cond-mat.mtrl-sci↗

arXiv2023

Layer sliding and twisting induced electronic transitions in correlated magnetic 1T-NbSe2 bilayers

Correlated two-dimensional (2D) layers, like 1T-phases of TaS2, TaSe2 and NbSe2, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of electron-correlation in the 2D limit. However, the coupling mechanism is, so far, poorly understood and was tentatively ascribed to interactions among the d_(z^2 ) orbitals of Ta or Nb atoms. Here, we theoretically show that the interlayer hybridization and localization strength of interfacial Se pz orbitals, rather than Nb d_(z^2 ) orbitals, govern the variation of electron-correlated properties upon interlayer sliding or twisting in correlated magnetic 1T-NbSe2 bilayers. Each of the both layers is in a star-of-David (SOD) charge-density-wave phase. Geometric and electronic structures, and magnetic properties of 28 different stacking configurations were examined and analyzed using density-functional-theory calculations. We found that the SOD contains a localized region (Reg-L), in which interlayer Se pz hybridization plays a paramount role in varying the energy levels of the two Hubbard bands. These variations lead to three electronic transitions among four insulating states, which demonstrated the effectiveness of interlayer interactions to modulate correlated magnetic properties in a prototypical correlated magnetic insulator.

cond-mat.mtrl-sci↗

arXiv2022

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

cond-mat.mtrl-sci↗

arXiv2022

Strain Effect on Air-Stability of Monolayer CrSe2

The discovery of two dimensional (2D) magnetic materials has brought great research value for spintronics and data storage devices. However, their air-stability as well as the oxidation mechanism has not been unveiled, which limits their further applications. Here, by first-principles calculations, we carried out a detailed study on the oxidation process of monolayer CrSe2 and biaxial tensile strain effect. We found dissociation process of O2 on pristine CrSe2 sheet is an endothermic reaction with a reaction energy barrier of 0.53 eV, indicating its thermodynamics stability. However, such a process becomes exothermic under a biaxial tensile strain reaching 1%, accompanying with a decreased reaction barrier, leading to reduced stability. These results manifest that in-plane strain plays a significant role in modifying air-stability in CrSe2 and shed considerable light on searching appropriate substrate to stabilize 2D magnetic materials.

cond-mat.mtrl-sci↗

arXiv2018

Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices

Recently, a covalent-like quasi-bonding was unveiled for the inter-chain interaction in a promising semiconductor, few-layer Tellurium. Such quasi-bond offers comparable bond lengths and strengths with those of a typical Te-Te covalent bond, which may lead to much easier transformations between the quasi-bonds and the covalent bonds. Here, we show a few structural phase-transitions among four Te allotropes in few-layer Te under charge doping. In particular, the semiconducting α-phase can transform into a smaller-bandgap β-phase, even-smaller-bandgap γ-phase and then metallic δ-phase in a Te bilayer. In a tri-layer, a metallic chiral α+δ phase is more stable under initial electron doping, leading to the appearance of chirality. Variations of electronic structures aside, these transitions are accompanied by the emergence or elimination of inversion centers (α-β, α-γ, α-α+δ), structural anisotropy (α-γ, γ-δ) and chirality (α-α+δ), which could result in substantial changes in optical and other properties. In light of this, this work opens the possibility toward building mono-elemental electronic and optoelectronic heterostructures or devices. It also offers a platform for studying relations between charge doping and electric/optical properties.

cond-mat.mtrl-sci↗

arXiv2018

Layer- and doping-tunable long range ferromagnetic order-ing in two-dimensional CrS2

Interlayer coupling is of vital importance for manipulating physical properties, e.g. electronic bandgap, in two-dimensional materials. However, tuning magnetic proper-ties in these materials is yet to be addressed. Here, we found a striped antiferromag-netic (sAFM) to ferromagnetic (FM) transition undergoing from monolayer to bilayer and thicker CrS2. This transition is attributed to charge sharing of interlayer S atoms and its resulting charge transfer from Cr d eg to t2g orbitals. The transferred charge reduces a portion of Cr4+ to Cr3+, which enhances the double-exchange mechanism favoring FM rather than sAFM ordering. Doping of electrons shares the same effect with stacking induced charge sharing. Therefore, charge doping could either manip-ulate the magnetic ordering between sAFM and FM or tune CrS2 between p- and n-doped magnetic semiconductors. We also proposed several prototype devices ena-bling to use external electric field for manipulating magnetic orderings of CrS2 layers. These results manifest the role of interlayer coupling in modifying magnetic proper-ties of layered materials

cond-mat.mtrl-sci↗

arXiv2017

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus (BP) offers and could be feasibly synthesized by simple solution-based methods. It is comprised of non-covalently bound parallel Te chains, among which covalent-like feature appears. This feature is, we believe, another demonstration of the previously found covalent-like quasi-bonding (CLQB) where wavefunction hybridization does occur. The strength of this inter-chain CLQB is comparable with that of intra-chain covalent bonding, leading to closed stability of several Te allotropes. It also introduces a tunable bandgap varying from nearly direct 0.31 eV (bulk) to indirect 1.17 eV (2L) and four (two) complex, highly anisotropic and layer-dependent hole (electron) pockets in the first Brillouin zone. It also exhibits an extraordinarily high hole mobility (~10$^5$ cm$^2$/Vs) and strong optical absorption along the non-covalently bound direction, nearly isotropic and layer-dependent optical properties, large ideal strength over 20%, better environmental stability than BP and unusual crossover of force constants for interlayer shear and breathing modes. All these results manifest that the few-layer Te is an extraordinary-high-mobility, high optical absorption, intrinsic-anisotropy, low-cost-fabrication, tunable bandgap, better environmental stability and nearly direct bandgap semiconductor. This "one-dimension-like" few-layer Te, together with other geometrically similar layered materials, may promote the emergence of a new family of layered materials.

cond-mat.mtrl-sci↗

arXiv2016

Deriving phosphorus atomic chain from few-layer black phosphorus

Phosphorus atomic chains, the utmost-narrow nanostructures of black phosphorus (BP), are highly relevant to the in-depth development of BP into one-dimensional (1D) regime. In this contribution, we report a top-down route to prepare atomic chains of BP via electron beam sculpting inside a transmission electron microscope (TEM). The growth and dynamics (i.e. rupture and edge migration) of 1D phosphorus chains are experimentally captured for the first time. Furthermore, the dynamic behaviors and associated energetics of the as-formed phosphorus chains are further corroborated by density functional theory (DFT) calculations. The 1D counterpart of BP will serve as a novel platform and inspire further exploration of the versatile properties of BP.

cond-mat.mtrl-sci↗

arXiv2016

Degradation of Black Phosphorus (BP): The Role of Oxygen and Water

Black phosphorus (BP) has attracted significant interest as a monolayer or few-layer material with extraordinary electrical and optoelectronic properties. However, degradation in air and other environments is an unresolved issue that may limit future applications. In particular the role of different ambient species has remained controversial. Here, we report systematic experiments combined with ab-initio calculations that address the effects of oxygen and water in the degradation of BP. Our results show that BP rapidly degrades whenever oxygen is present, but is unaffected by deaerated (i.e., O2 depleted) water. This behavior is rationalized by oxidation involving a facile dissociative chemisorption of O2, whereas H2O molecules are weakly physisorbed and do not dissociate on the BP surface. Oxidation (by O2) turns the hydrophobic pristine BP surface progressively hydrophilic. Our results have implications on the development of encapsulation strategies for BP, and open new avenues for exploration of phenomena in aqueous solutions including solution-gating, electrochemistry, and solution-phase approaches for exfoliation, dispersion, and delivery of BP.

cond-mat.mtrl-sci↗

arXiv2016

Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered mono- to tetra-layer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to band-like in subsequent layers. Such abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ~3nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

cond-mat.mes-hall↗

arXiv2015

Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus

Stacking two-dimensional (2D) materials into multi-layers or heterostructures, known as van der Waals (vdW) epitaxy, is an essential degree of freedom for tuning their properties on demand. Few-layer black phosphorus (FLBP), a material with high potential for nano- and optoelectronics applications, appears to have interlayer couplings much stronger than graphene and other 2D systems. Indeed, these couplings call into question whether the stacking of FLBP can be governed only by vdW interactions, which is of crucial importance for epitaxy and property refinement. Here, we perform a theoretical investigation of the vibrational properties of FLBP, which reflect directly its interlayer coupling, by discussing six Raman-observable phonons, including three optical, one breathing, and two shear modes. With increasing sample thickness, we find anomalous redshifts of the frequencies for each optical mode but a blueshift for the armchair shear mode. Our calculations also show splitting of the phonon branches, due to anomalous surface phenomena, and strong phonon-phonon coupling. By computing uniaxial stress effects, inter-atomic force constants, and electron densities, we provide a compelling demonstration that these properties are the consequence of strong and highly directional interlayer interactions arising from electronic hybridization of the lone electron-pairs of FLBP, rather than from vdW interactions. This exceptional interlayer coupling mechanism controls the stacking stability of BP layers and thus opens a new avenue beyond vdW epitaxy for understanding the design of 2D heterostructures.

cond-mat.mtrl-sci↗

arXiv2014

Correlation of interfacial bonding mechanism and equilibrium conductance of molecular junctions

We report theoretical investigations on the role of interfacial bonding mechanism and its resulting structures to quantum transport in molecular wires. Two bonding mechanisms for the Au-S bond in an Au(111)/1,4-benzenedithiol(BDT)/Au(111) junction were identified by ab initio calculation, confirmed by a recent experiment, which, we showed, critically control charge conduction. It was found, for Au/ BDT/Au junctions, the hydrogen atom, bound by a dative bond to the Sulfur, is energetically non-dissociative after the interface formation. The calculated conductance and junction breakdown forces of H-non-dissociative Au/BDT/Au devices are consistent with the experimental values, while the H-dissociated devices, with the interface governed by typical covalent bonding, give conductance more than an order of magnitude larger. By examining the scattering states that traverse the junctions, we have revealed that mechanical and electric properties of a junction have strong correlation with the bonding configuration. This work clearly demonstrates that the interfacial details, rather than previously believed many-body effects, is of vital importance for correctly predicting equilibrium conductance of molecular junctions; and manifests that the interfacial contact must be carefully understood for investigating quantum transport properties of molecular nanoelectronics.

cond-mat.mes-hall↗

arXiv2014

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we present a detailed theoretical investigation of the atomic and electronic structure of few-layer black phosphorus (BP) in order to predict its electrical and optical properties. This system has a direct bandgap, tunable from 1.51 eV for a monolayer to 0.59 eV for a 5-layer sample. We predict that the mobilities are hole-dominated, rather high and highly anisotropic. The monolayer is exceptional in having an extremely high hole-mobility (of order 10000 cm$^{2}$ V$^{-1}$ s$^{-1}$) and anomalous elastic properties which reverse the anisotropy. Light absorption spectra indicate linear dichroism between perpendicular in-plane directions, which allows optical determination of the crystalline orientation and optical activation of the anisotropic transport properties. These results make few-layer BP a promising candidate for future electronics.

cond-mat.mtrl-sci↗