arXiv subjects

Jingxin Hu

Publications and source records attributed to Jingxin Hu.

3 recordsLinked to original sources

arXiv2026

Nemo: A Low-Write-Amplification Cache for Tiny Objects on Log-Structured Flash Devices

Modern storage systems predominantly use flash-based SSDs as a cache layer due to their favorable performance and cost efficiency. However, in tiny-object workloads, existing flash cache designs still suffer from high write amplification. Even when deploying advanced log-structured flash devices (e.g., Zoned Namespace SSDs and Flexible Data Placement SSDs) with low device-level write amplification, application-level write amplification still dominates. This work proposes Nemo, which enhances set-associative cache design by increasing hash collision probability to improve set fill rate, thereby reducing application-level write amplification. To satisfy caching requirements, including high memory efficiency and low miss ratio, we introduce a bloom filter-based indexing mechanism that significantly reduces memory overhead, and adopt a hybrid hotness tracking to achieve low miss ratio without losing memory efficiency. Experimental results show that Nemo simultaneously achieves three key objectives for flash cache: low write amplification, high memory efficiency, and low miss ratio.

cs.AR↗

arXiv2022

Carrier mobilities of Janus transition metal dichalcogenides monolayers studied by Born effective charge and first-principles calculation

Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are a new class of materials with unique physical properties. However, the carrier mobility of most Janus TMDs calculated by deformation potential theory (DPT) is not reliable due to the unconsidered part of lattice scattering. In this work, we propose a new method of Born effective charge (BEC) to calculate the carrier mobility of Janus TMDs by including the important factors that neglected in the DPT. The BEC could be used in the calculation of both pure and defective Janus TMDs by employing density functional perturbation theory. We have figured out the relationship between the carrier mobility and the value of BEC, which is the lower the absolute BEC, the higher the electron or hole mobility. Using the new method, we have calculated the carrier mobility of commonly studied Janus TMDs with and without defect. The method may shed light on the high-throughout calculation of selecting high carrier mobility 2D materials.

cond-mat.mtrl-sci↗

arXiv2022

First-principles study on the solute-induced low diffusion and self-trapping of helium in fcc iron

The addition of alloying elements plays an essential role in helium (He) behaviours produced by transmutation in metal alloys. Effects of solutes (Ni, Cr, Ti, P, Si, C) on the behaviours of He and He-He pair in face-centred cube (fcc) iron have been investigated using first-principles calculations based on density functional theory (DFT). For the interactions of solutes and He, we found that Ti, P, Si, and C attracts He is more potent than Ni and Cr in fcc iron. We have determined the most stable configuration for the He-He pair, which is the Hesub-Hetetra pair with a binding energy of 1.60 eV. In considering the effect of solutes on the stability of the He-He pair, we have proposed a unique definition of binding energy. By applying the definition, we suggest that Ti and P could weaken He self-trapping, and Cr and C are beneficial for He self-trapping, while Ni is similar to the matrix Fe itself. For the diffusion of He, which is the necessary process of forming the He bubble, we determined that the most stable interstitial He is in a tetrahedral site and could migrate with the energy barrier of 0.16 eV in pure fcc iron. We further found that Ti and Si can increase the barrier to 0.18 and 0.20 eV; on the contrary, Cr and P decrease the barrier to 0.10 and 0.06 eV, respectively. Summarizing the calculations, we conclude that Ti decreases while Cr increases the diffusion and self-trapping of He in fcc iron.

cond-mat.mtrl-sci↗