arXiv subjects

Jinhyuk Lim

Publications and source records attributed to Jinhyuk Lim.

4 recordsLinked to original sources

arXiv2024

Pressure induced metallization and loss of surface magnetism in FeSi

Single crystalline FeSi samples with a conducting surface state (CSS) were studied under high pressure ($\textit{P}$) and magnetic field ($\textit{B}$) by means of electrical resistance ($\textit{R}$) measurements to explore how the bulk semiconducting state and the surface state are tuned by the application of pressure. We found that the energy gap ($Δ$) associated with the semiconducting bulk phase begins to close abruptly at a critical pressure ($P_{cr}$) of ~10 GPa and the bulk material becomes metallic with no obvious sign of any emergent phases or non-Fermi liquid behavior in $\textit{R}$($\textit{T}$) in the neighborhood of $P_{cr}$ above 3 K. Moreover, the metallic phase appears to remain at near-ambient pressure upon release of the pressure. Interestingly, the hysteresis in the $\textit{R}$($\textit{T}$) curve associated with the magnetically ordered CSS decreases with pressure and vanishes at $P_{cr}$, while the slope of the $\textit{R}$($\textit{B}$) curve, d$\textit{R}$/d$\textit{B}$, which has a negative value for $\textit{P}$ < $P_{cr}$, decreases in magnitude with $\textit{P}$ and changes sign at $P_{cr}$. Thus, the CSS and the corresponding two-dimensional magnetic order collapse at $P_{cr}$ where the energy gap $Δ$ of the bulk material starts to close abruptly, revealing the connection between the CSS and the semiconducting bulk state in FeSi.

cond-mat.str-el↗

arXiv2021

A15 Nb$_3$Si -- A "high" Tc superconductor synthesized at a pressure of one megabar and metastable at ambient conditions

A15 Nb$_3$Si is, until now, the only high temperature superconductor produced at high pressure (~110 GPa) that has been successfully brought back to room pressure conditions in a metastable condition. Based on the current great interest in trying to create metastable-at-room-pressure high temperature superconductors produced at high pressure, we have restudied explosively compressed A15 Nb$_3$Si and its production from tetragonal Nb$_3$Si. First, diamond anvil cell pressure measurements up to 88 GPa were performed on explosively compressed A15 Nb$_3$Si material to trace Tc as a function of pressure. Tc is suppressed to ~ 5.2 K at 88 GPa. Then, using these Tc (P) data for A15 Nb$_3$Si, pressures up to 92 GPa were applied at room temperature (which increased to 120 GPa at 5 K) on tetragonal Nb$_3$Si. Measurements of the resistivity gave no indication of any A15 structure production, i.e., no indications of the superconductivity characteristic of A15 Nb$_3$Si. This is in contrast to the explosive compression (up to P~110 GPa) of tetragonal Nb$_3$Si, which produced 50-70% A15 material, Tc = 18 K at ambient pressure, in a 1981 Los Alamos National Laboratory experiment. Our theoretical calculations show that A15 Nb$_3$Si has an enthalpy vs the tetragonal structure that is 0.07 eV/atom smaller at 100 GPa, implying that the accompanying high temperature (1000 deg C) caused by explosive compression is necessary to successfully drive the reaction kinetics of the tetragonal -> A15 Nb$_3$Si structural transformation. Annealing experiments on the A15 explosively compressed material reaching time scales of 39 years are consistent with this viewpoint.

cond-mat.supr-con↗

arXiv2020

Remarkable low-energy properties of the pseudogapped semimetal Be$_5$Pt

We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order 3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperature. We argue that this unexpected behavior can be understood by a cancellation of the energy dependence of density of states and relaxation time due to disorder, and discuss a model for electronic transport. With applied pressure, the resistivity becomes semiconducting, consistent with theoretical calculations that show that the band gap increases with applied pressure. We further discuss the role of Be inclusions in the samples.

cond-mat.mtrl-sci↗

arXiv2014

Upper critical field of KFe2As2 under pressure: A test for the change in the superconducting gap structure

We report measurements of electrical resistivity under pressure to 5.8 GPa, magnetization to 6.7 GPa,and ac susceptibility to 7.1 GPa in KFe2As2. The previously reported change of slope in the pressure dependence of the superconducting transition temperature Tc(p) at a pressure p0=1.8 GPa is confirmed, and Tc(p) is found to be nearly constant above p0 up to 7.1 GPa. The T-p phase diagram is very sensitive to the pressure conditions as a consequence of the anisotropic uniaxial pressure dependence of Tc. Across p0, a change in the behavior of the upper critical field is revealed through a scaling analysis of the slope of Hc2 with the effective mass as determined from the A coefficient of the T2 term of the temperature-dependent resistivity. We show that this scaling provides a quantitative test for the changes of the superconducting gap structure and suggests the development of a kz modulation of the superconducting gap above p0 as a most likely explanation.

cond-mat.supr-con↗