arXiv subjects

Jinlong Yang

Publications and source records attributed to Jinlong Yang.

At least 109 records · Page 6Linked to original sources

arXiv2020

Interpolative separable density fitting decomposition for accelerating Hartree-Fock exchange calculations within numerical atomic orbitals

The high cost associated with the evaluation of Hartree-Fock exchange (HFX) makes hybrid functionals computationally challenging for large systems. In this work, we present an efficient way to accelerate HFX calculations with numerical atomic basis sets. Our approach is based on the recently proposed interpolative separable density fitting (ISDF) decomposition to construct a low rank approximation of HFX matrix, which avoids explicit calculations of the electron repulsion integrals (ERIs) and significantly reduces the computational cost. We implement the ISDF method for hybrid functional (PBE0) calculations in the HONPAS package. We take benzene and polycyclic aromatic hydrocarbons molecules as examples and demonstrate that hybrid functionals with ISDF yields quite promising results at a significantly reduced computational cost. Especially, the ISDF approach reduces the total cost for evaluating HFX matrix by nearly 2 orders of magnitude compared to conventional approaches of direct evaluation of ERIs.

physics.comp-ph↗

arXiv2020

Can High-Temperature Reactions Be Described by a Minimum Energy Path Model? Steric Hindrance Matters

High-temperature reactions widely exist in nature. However, they are difficult to be characterized either experimentally or computationally. The routinely used minimum energy path (MEP) model in computational modeling of chemical reactions is not justified to describe high-temperature reactions since high-energy structures are actively involved there. In this study, using CH4 decomposition on the Cu(111) surface as an example, we systematically compare MEP results with those obtained by explicitly sampling all relevant structures via ab initio molecular dynamics (AIMD) simulations at different temperatures. Interestingly, we find that, for reactions protected by a strong steric hindrance effect, the MEP is still effectively followed even at a temperature close to the Cu melting point. In contrast, without such a protection, the flexibility of surface Cu atoms can lead to a significant free energy barrier reduction at a high temperature. Accordingly, some conclusions about graphene growth mechanisms based on MEP calculations should be revisited. Physical insights provided by this study can deepen our understanding on high-temperature surface reactions.

physics.chem-ph↗

arXiv2020

The Moving-Grid Effect in the Harmonic Vibrational Frequency Calculations with Numeric Atom-Centered Orbitals

When using atom-centered integration grids, the portion of the grid that belongs to a certain atom also moves when this atom is displaced. In the paper, we investigate the moving-grid effect in the calculation of the harmonic vibrational frequencies when using all-electron full-potential numeric atomic-centered orbitals as the basis set. We find that, unlike the first order derivative (i.e., forces), the moving-grid effect plays an essential role for the second order derivatives (i.e., vibrational frequencies). Further analysis reveals that predominantly diagonal force constant terms are affected, which can be bypassed efficiently by invoking translational symmetry. Our approaches have been demonstrated in both finite (molecules) and extended (periodic) systems.

physics.comp-ph↗

arXiv2019

Electronic and Magnetic Structure of Infinite-layer $\textrm{NdNiO}_2$: Trace of Antiferromagnetic Metal

The recent discovery of Sr-doped infinite-layer nickelate $\textrm{NdNiO}_2$ [D. Li et al. Nature 572, 624 (2019)] offers an exciting platform for investigating unconventional superconductivity in nickelatebased compounds. In this work, we present a first-principles calculations for the electronic and magnetic properties of undoped parent $\textrm{NdNiO}_2$. Intriguingly, we found that: 1) the paramagnetic phase has complex Fermi pockets with 3D characters near the Fermi level; 2) by including electronelectron interactions, 3d-electrons of Ni tend to form $(π, π, π)$ antiferromagnetic ordering at low temperatures; 3) with moderate interaction strength, 5d-electrons of Nd contribute small Fermi pockets that could weaken the magnetic order akin to the self-doping effect. Our results provide a plausible interpretation for the experimentally observed resistivity minimum and Hall coefficient drop. Moreover, we elucidate that antiferromagnetic ordering in $\textrm{NdNiO}_2$ is relatively weak, arising from the small exchange coupling between 3d-electrons of Niand also hybridization with 5d-electrons of Nd.

cond-mat.str-el↗

arXiv2018

Electron-phonon interaction in Ca2N monolayer: intrinsic mobility of electrene

Electron-phonon(e-ph) interaction in Ca2N monolayer, the first electrene material with two-dimensional(2D) electron gas floating in free space, is expected to be very weak and such a character can be used to design weak-scattering transport channels. Therefore, it is highly desirable to quantitatively evaluate the carrier mobility of electrene. In this study, e-ph interaction in Ca2N monolayer is investigated using a precise Wannier interpolation-based first principles technique. The calculated e-ph coupling matrix elements of Ca2N monolayer are indeed small compared to other 2D materials such as graphene, which leads to an intrinsic mobility of 189 cm2V-1s-1, much higher than those of conventional metals. Other factors affecting mobility are discussed in a comparison with graphene. It is predicted that, based on a momentum mismatch mechanism, mobility of Ca2N monolayer can be increased further to above 3000 cm2V-1s-1 via hole doping. Our results confirm that Ca2N electrene is a promising electronic material.

physics.comp-ph↗

arXiv2018

Two-dimensional Penta-Pt2N4: an ideal material for nanoelectronics

Since the discovery of graphene, two-dimensional (2D) materials have paved a new routine for designing high-performance nanoelectronic devices. To facilitate the device applications, there are three key requirements for a material: sizeable band gap, high carrier mobility and robust environmental stability. However, for the hottest 2D materials studied in recent years, graphene is gapless, transition metal dichalcogenides have low carrier mobility, and black phosphorene is environmentally sensitive. So far, these three characteristics can seldom be satisfied in one single material. Therefore, it becomes a great challenge for finding an ideal 2D material to overcome such a limitation. In this work, we theoretically predict a novel planar 2D material: Penta-Pt2N4, which are designed by the fantastic Cario pentagonal tiling as well as the rare nitrogen double bond. Most significantly, the 2D Penta-Pt2N4 exhibits excellent intrinsic properties, including large direct band gap up to 1.51 eV, high carrier mobility up to 105 cm2V-1s-1, giant Young's module up to 0.70 TPa, and robust dynamic, thermal and chemical stability. Moreover, Penta-Pt2N4 is a global minimal with PtN2 stoichiometry in 2D, so we also propose a CVD/MBE scheme to enable its experimental synthesis. We envision that the 2D Penta-Pt2N4 may find a wide application for future nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2017

Dominant Kinetic Pathways of Graphene Growth in Chemical Vapor Deposition: The Role of Hydrogen

The most popular way to produce graphene nowadays is chemical vapor deposition, where, surprisingly, H$_2$ gas is routinely supplied even though it is a byproduct itself. In this study, by identifying dominant growing pathways via multiscale simulations, we unambiguously reveal the central role hydrogen played in graphene growth. Hydrogen can saturate the edges of a growing graphene island to some extent, depending on the H$_2$ pressure. Although graphene etching by hydrogen has been observed in experiment, hydrogen saturation actually stabilizes graphene edges by reducing the detachment rates of carbon-contained species. Such a new picture well explains some puzzling experimental observations and is also instrumental in growth protocol optimization for two-dimensional atomic crystal van der Waals epitaxy.

cond-mat.mtrl-sci↗

arXiv2017

Strong Edge Magnetism and Tunable Energy Gaps in Zigzag Graphene Quantum Dots with High Stability

Graphene is a nonmagnetic semimetal and cannot be directly used as electronic or spintronic devices. We demonstrate that graphene quantum dots (GQDs) can exhibit strong edge magnetism and tunable energy gaps due to the presence of localized edge states. By using large-scale first principle density functional theory (DFT) calculations and detailed analysis based on model Hamiltonians, we can show that the zigzag edge states in GQDs become much stronger and more localized as the system size increases. The enhanced edge states induce strong electron-electron interactions along the edges of GQDs, ultimately resulting in a magnetic phase transition from nonmagnetic to intra-edge ferromagnetic and inter-edge antiferromagnetic, when the diameter is larger than 4.5 nm. Our analysis shows that the inter-edge superexchange interaction of antiferromagnetic states between two nearest-neighbor zigzag edges in GQDs is much stronger than that exists between two parallel zigzag edges in GQDs and graphene nanoribbons. Furthermore, such strong and localized edge states also induce GQDs semiconducting with tunable energy gaps, mainly controlled by adjusting the system size. Our results show that the quantum confinement effect, inter-edge superexchange (antiferromagnetic), and intra-edge direct exchange (ferromagnetic) interactions are crucial for the electronic and magnetic properties of zigzag GQDs at the nanoscale.

cond-mat.mtrl-sci↗

arXiv2017

C3N: a Two Dimensional Semiconductor Material with High stiffness,Superior Stability and Bending Poisson's Effect

Recently, a new type of two-dimensional layered material, i.e. C3N, has been fabricated by polymerization of 2,3-diaminophenazine and used to fabricate a field-effect transistor device with an on/off current ratio reaching 5.5E10 (Adv. Mater. 2017, 1605625). Here we have performed a comprehensive first-principles study mechanical and electronic properties of C3N and related derivatives. Ab inito molecular dynamics simulation shows that C3N monolayer can withstand high temperature up to 2000K. Besides high stability, C3N is predicted to be a superior stiff material with high Young's modulus (1090.0 GPa), which is comparable or even higher than that of graphene (1057.7 GPa). By roll-up C3N nanosheet into the corresponding nanotube, an out-of-plane bending deformation is also investigated. The calculation indicates C3N nanosheet possesses a fascinating bending Poisson's effect, namely, bending induced lateral contraction. Further investigation shows that most of the corresponding nanotubes also present high Young's modulus and semiconducting properties. In addition, the electronic properties of few-layer C3N nanosheet is also investigated. It is predicated that C3N monolayer is an indirect semiconductor (1.09 eV) with strongly polar covalent bonds, while the multi-layered C3N possesses metallic properties with AD-stacking. Due to high stability, suitable band gap and superior mechanical strength, the C3N nanosheet will be an ideal candidate in high-strength nano-electronic device applications.

cond-mat.mtrl-sci↗

arXiv2017

BP_5 Monolayer with Multiferroicity and Negative Poisson's Ratio: A Prediction by Global Optimization Method

Based on variable components global optimization algorithm, we predict a stable two-dimensional (2D) phase of boron phosphide with 1:5 stoichiometry, i.e. boron pentaphosphide (BP_5) monolayer, which has a lower formation energy than that of the commonly believed graphitic phase (g-BP). BP_5 monolayer is a multiferroic material with coupled ferroelasticity and ferroelectricity. The predicted reversible strain is up to 41.41%, which is the largest among all reported ferroelastic materials. Due to the non-centrosymmetric structure and electronegativity differences between boron and phosphorus atoms, an in-plane spontaneous polarization of 326.0 pC/m occurs in BP_5. Moreover, the recently hunted negative Poisson's ratio property, is also observed in BP_5. As an indirect semiconductor with a band gap of 1.34 eV, BP_5 displays outstanding optical and electronic properties, for instance strongly anisotropic visible-light absorption and high carrier mobility. The rich and extraordinary properties of BP_5 make it a potential nanomaterial for designing electromechanical or optoelectronic devices, such as nonvolatile memory with conveniently readable/writeable capability. Finally, we demonstrate that AlN (010) surface could be a suitable substrate for epitaxy growth of BP_5 monolayer.

cond-mat.mtrl-sci↗

arXiv2016

δ-phosphorene: a two dimensional material with high negative Poisson's ratio

As a basic mechanical parameter, Poisson's ratio (ν) measures the mechanical responses of solids against external loads. In rare cases, materials have a negative Poisson's ratio (NPR), and present an interesting auxetic effect. That is, when a material is stretched in one direction, it will expand in the perpendicular direction. To design modern nanoscale electromechanical devices with special functions, two dimensional (2D) auxetic materials are highly desirable. In this work, based on first principles calculations, we rediscover the previously proposed δ-phosphorene (δ-P) nanosheets [Jie Guan et al., Phys. Rev. Lett. 2014, 113, 046804] are good auxetic materials with a high NPR. The results show that the Young's modulus and Poisson's ratio of δ-P are all anisotropic. The NPR value along the grooved direction is up to -0.267, which is much higher than the recently reported 2D auxetic materials. The auxetic effect of δ-P originated from its puckered structure is robust and insensitive to the number of layers due to weak interlayer interactions. Moreover, δ-P possesses good flexibility because of its relatively small Young's modulus and high critical crack strain. If δ-P can be synthesized, these extraordinary properties would endow it great potential in designing low dimensional electromechanical devices.

cond-mat.mtrl-sci↗

arXiv2016

Two-Dimensional Boron Oxides with Dirac Loop and Strongly anisotropic Carrier Mobility

Recently, two-dimensional boron sheets have attracted a lot of attentions owing to their structural polymorphs and outstanding properties. And, due to chemical complexity and electron deficiency of B atoms, the 2D boron sheets are easy affected by the environment. So, exploring novel 2D boron oxides gets highly needed. In this study, we theoretically explored 2D boron oxides structures and their basic properties. We found 2D boron oxides are metals or semimetals, when oxygen concentration is low. More interesting, the B6O1 exhibits Dirac Loop near the Fermi level and the maximum Fermi velocity is estimated as high as 0.61*10E6 m/s, which much close to that in graphene. In addition, when the oxygen concentration is one forth, the most stable B4O1 get a semiconductor with a direct band gap of 1.24 eV and a strong anisotropic carrier mobility. Such huge differences of carrier mobility between two directions have not been reported in other 2D materials. Besides, when oxygen concentra-tion is higher than one forth, the 2D boron sheets will get unstable based our results. We also proposed a method how to synthesize these systems. Our work provide a basic knowledge of 2D boron oxides and may lead to novel 2D boron oxides discovered. The unique electronic properties of the B6O1 and B4O1 render them promising 2D materials for applications in high-performance nanodevices.

cond-mat.mtrl-sci↗

arXiv2016

Water on Silicene: Hydrogen Bond Autocatalysis Induced Physisorption-Chemisorption-Dissociation Transition

A single water molecule has nothing special. However, macroscopic water displays many anomalous properties at the interface, such as a high surface tension, hydrophobicity and hydrophillicity. Although the underlying mechanism is still elusive, hydrogen bond is expected to have played an important role. An interesting question is if the few-water molecule clusters will be qualitatively different from a single molecule. Using adsorption behavior as an example, by carefully choosing two-dimensional silicene as the substrate material, we demonstrate that water monomer, dimer and trimer show contrasting properties. The additional water molecules in dimer and trimer induce a transition from physisorption to chemisorption then to dissociation on silicene. Such a hydrogen bond autocatalytic effect is expected to have a broad application potential in silicene-based water molecule sensor and metal-free catalyst for water dissociation.

cond-mat.mtrl-sci↗

arXiv2016

A many-body GW+BSE investigation of electronic and optical properties of C2N

A newly synthesized layered material C2N was investigated based on many- body perturbation theory using GW plus Bethe-Salpeter equation approach. The electronic band gap was determined to be ranging from 3.75 to 1.89 eV from monolayer to bulk. Significant GW quasiparticle corrections, of more than 0.9 eV, to the Kohn-Sham band gaps from the local density approximation (LDA) calculations are found. Strong excitonic effects play a crucial role in optical properties. We found large binding energies of greater than 0.6 eV for bound excitons in few-layer C2N, while it is only 0.04 eV in bulk C2N. All the structures exhibit strong and broad optical absorption in the visible light region, which makes C2N a promising candidate for solar energy conversion, such as photocatalytic water splitting.

cond-mat.mtrl-sci↗

arXiv2015

Is phosphorene with intrinsic defect still an ideal anode material?

The diffusion of Li in electrode materials is key factor to charging/discharging rate capacity of Li-ion battery (LIB). Recently, two-dimensional phosphorene has been proposed as a very promising electrode material due to its ultrafast and directional lithium diffusion, as well as large energy capacity. Here, on the basis of density functional theory, we report that the intrinsic point defects, including vacancy and stone-wales defects, will block the directional ultrafast diffusion of lithium in phosphorene. On the defect-free phosphorene, diffusion of Li along the zigzag lattice direction is 1.6 billion times faster than along the armchair lattice direction, and 260 times faster than that in graphite. By introducing intrinsic vacancy and stone-wales defect, the diffusion energy barrier of Li along zigzag lattice direction increases sharply to the range of 0.17 ~ 0.49 eV, which block the ultrafast migration of lithium along the zigzag lattice direction. Meanwhile, the open circuit voltage increases with the emergence of defects, which is not suitable for anode materials. In addition, the formation energies of defects in phosphorene are much lower than those in graphene and silicene sheet, therefore, it is highly demanded to generate defect-free phosphorene for LIB applications.

cond-mat.mtrl-sci↗

arXiv2015

Few-Layer C2N: A Promising Metal-free Photocatalyst for Water Splitting

Successful synthesis of the nitrogenated holey two-dimensional structures C2N (Nat. Commun. 2015, 6, 6486) using simply wet-chemical reaction offer a cost-effective way to generate other 2D materials with novel optical and electronic properties. On basis of the density functional theory calculations, we investigate electronic properties of monolayer and multilayer C2N. We find that few-layer C2N have a direct bandgap and the direct bandgap of the system can vary from 2.47 eV for monolayer to 1.84 eV for a five-layer. Besides, for the few-layer C2N, appropriate band gap, band edge alignments, and strong visible-light absorption demonstrate it may be a potential metal-free visible-light driven photocatalyst for water splitting.

cond-mat.mtrl-sci↗

arXiv2015

Multilayer C2N: Effect of Stacking Order and Number of Layers on Bandgap and Its Controlled Electronic Properties by External Electric Field

Successful synthesis of the nitrogenated holey two-dimensional structures C2N (Nat. Commun. 2015, 6, 1-7) using simply wet-chemical reaction offer a cost-effective way to generate other 2D materials with novel optical and electronic properties. Using the few-layer C2N as models, we have performed an ab initio study of electronic properties of layered C2N. Band gaps of this system exhibit monotone decreasing as the number of layers increase. And a direct-gap to indirect-gap transition at the bulk C2N. Besides, when we apply an out-of-plane electric field on few-layer C2N, the band gap of multilayer C2N will be decreased as the electric field increased and a semiconductor-semimetal transition will happen for five-layer C2N under an appropriate electric field, whereas the band gap of monolayer C2N is unchanged under electric field. Owing to their tunable bandgaps in a wide range, layers C2N will have tremendous opportunities to be applied in nanoscale electronic and optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2015

First-principles study of two-dimensional van der Waals heterojunctions

Research on graphene and other two-dimensional (2D) materials, such as silicene, germanene, phosphorene, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C3N4), graphitic zinc oxide (g-ZnO) and molybdenum disulphide (MoS2), has recently received considerable interest owing to their outstanding properties and wide applications. Looking beyond this field, combining the electronic structures of 2D materials in ultrathin van der Waals heterojunctions has also emerged to widely study theoretically and experimentally to explore some new properties and potential applications beyond their single components. Here, this article reviews our recent theoretical studies on the structural, electronic, electrical and optical properties of 2D van der Waals heterojunctions using density functional theory calculations, including the Graphene/Silicene, Graphene/Phosphorene, Graphene/g-ZnO, Graphene/MoS2 and g-C3N4/MoS2 heterojunctions. Our theoretical simulations, designs and calculations show that novel 2D van der Waals heterojunctions provide a promising future for electronic, electrochemical, photovoltaic, photoresponsive and memory devices in the experiments.

cond-mat.mtrl-sci↗